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A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

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Chinese Physics B 2022年第11期31卷 482-486页

作者： Zhihong Chen Minhan Mi Jielong Liu Pengfei Wang Yuwei Zhou Meng Zhang Xiaohua Ma Yue Hao Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China School of Advanced Materials and Nanotechnology Xidian UniversityXi'an 710071China Guangzhou Institute of Technology Xidian UniversityGuangzhou 510555China

We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors(HEMTs)with thin-barrier to minimize surface leakage current to enhance the breakdown *** bilayer SiN with 20-nm Si-rich SiN and 100-nm Si_(3)N_(4) was deposited by plasma-enhanced chemical vapor deposition(PECVD)after removing 20-nm SiO_(2)pre-deposition *** to traditional Si_(3)N_(4) passivation for thin-barrier AlGaN/GaN HEMTs,Si-rich SiN bilayer passivation can suppress the current collapse ratio from 18.54%to 8.40%.However,Si-rich bilayer passivation leads to a severer surface leakage current,so that it has a low breakdown *** 20-nm SiO_(2)pre-deposition layer can protect the surface of HEMTs in fabrication process and decrease Ga–O bonds,resulting in a lower surface leakage *** contrast to passivating Si-rich SiN directly,devices with the novel Si-rich SiN bilayer passivation increase the breakdown voltage from 29 V to 85 *** frequency(RF)small-signal characteristics show that HEMTs with the novel bilayer SiN passivation leads to f_(T)/f_(max) of 68 GHz/102 *** 30 GHz and V_(DS)=20 V,devices achieve a maximum P_(out) of 5.2 W/mm and a peak power-added efficiency(PAE)of 42.2%.These results indicate that HEMTs with the novel bilayer SiN passivation can have potential applications in the millimeter-wave range.

关键词： AlGaN/GaN HEMTs thin-barrier Si-rich SiN passivation current collapse surface leakage current millimeter-wave

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High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications

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Chinese Physics B 2022年第2期31卷 547-551页

作者： Pengfei Wang Minhan Mi Meng Zhang Jiejie Zhu Yuwei Zhou Jielong Liu Sijia Liu Ling Yang Bin Hou Xiaohua Ma Yue Hao Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi’an 710071China School of Advanced Materials and Nanotechnology Xidian UniversityXi’an 710071China Xidian University Guangzhou Institute of Technology Guangzhou 510555China

We demonstrated an AlGaN/GaN high electron mobility transistor(HEMT)namely double-Vthcoupling HEMT(DVC-HEMT)fabricated by connecting different threshold voltage(Vth)values including the slant recess element and planar element in parallel along the gate width with N;O plasma treatment on the gate *** comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance(Gm)and radio frequency(RF)output signal characteristics in *** fabricated device shows the transconductance plateau larger than 7 V,which yields a flattened fT/fmax-gate bias *** the operating frequency of 30 GHz,the peak power-added efficiency(PAE)of 41%accompanied by the power density(Pout)of 5.3 W/***,the proposed architecture also features an exceptional linearity performance with 1-d B compression point(P1 d B)of 28 d Bm,whereas that of the Fin-like HEMT is 25.2 d *** device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.

关键词： AlGaN/GaN linearity 1-dB compression point millimeter-wave application

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Flexible Hf_(0.5)Zr_(0.5)O_(2)ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

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Nano Research 2022年第4期15卷 2913-2918页

作者： Yuting Chen Yang Yang Peng Yuan Pengfei Jiang Yuan Wang Yannan Xu Shuxian Lv Yaxin Ding Zhiwei Dang Zhaomeng Gao Tiancheng Gong Yan Wang Qing Luo Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Department of Mathematics and Theories Peng Cheng LaboratoryNo.2Xingke 1st StreetNanshanShenzhen 518000China

Flexible memory devices are promising for information storage and data processing applications in portable,wearable,and smart electronics operating under curved *** this work,we realized high-performance flexible ferroelectric capacitors based on Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin film by depositing a buffer layer of Al_(2)O_(3)on polyimide(PI)substrates using atomic layer deposition(ALD).The flexible ferroelectric HZO films exhibit high remnant polarization(Pr)of 21μC/cm^(2).Furthermore,deterioration of polarization,retention,and endurance performance was not observed even at a bending radius of 2 mm after 5,000 bending *** work marks a critical step in the development of high-performance flexible HfO_(2)-based ferroelectric memories for next-generation wearable electronic devices.

关键词： ferroelectric Hf_(0.5)Zr_(0.5)O_(2)(HZO) Al_(2)O_(3)buffer layer flexible

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Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

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Chinese Physics B 2022年第1期31卷 658-663页

作者： Yan-Fu Wang Bo Wang Rui-Ze Feng Zhi-Hang Tong Tong Liu Peng Ding Yong-Bo Su Jing-Tao Zhou Feng Yang Wu-Chang Ding Zhi Jin University of Chinese Academic of Sciences Beijing 100029China High-Frequency High-Voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologyGuilin 541004China

Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding *** channel of the new device is In_(0.7)Ga_(0.3)As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are *** current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 *** addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.

关键词： heterogeneous integration InP high electron mobility transistor quartz small-signal model

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First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip

First Demonstration of a Design Methodology for Highly Relia...

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Symposium on VLSI Technology

作者： Tiancheng Gong Lihua Xu Wei Wei Pengfei Jiang Peng Yuan Bowen Nie Yuanquan Huang Yuan Wang Yang Yang Jianfeng Gao Junfeng Li Jun Luo Lingfei Wang Jianguo Yang Qing Luo Ling Li Steve S. Chung Ming Liu State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing China Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Institute of Electronics National Yang Ming Chiao Tung University Taiwan

In achieving a reliable operation of FRAM arrays at high temperature (300K-400K), we provide an optimized operation design methodology considering the temperature effect on 128kb ITIC FRAM chip for the first time. Firstly, we found that the conventional voltage selection scheme in ITIC FRAM array is not applicable at high temperature since the P r value read by low voltage decreases at high temperature, leading to a poor yield. Then, the mechanism of P r degradation under high temperature is systematically investigated through material characterizations and electrical measurements. It was found that the increase of the internal electric field $(\mathrm{E}_{\mathrm{b}\mathrm{i}\mathrm{a}\mathrm{s}})$ caused by electron de-trapping mainly contributes to the P r degradation. Moreover, a KMC model considering $\mathrm{E}_{\mathrm{b}\mathrm{i}\mathrm{a}\mathrm{s}}$ is developed, and the optimum voltage, which can mitigate the temperature effect from 300K-400K, is predicted. This predicted voltage is finally validated on 128kb ITIC FeRAM chip, and excellent properties including non-volatile $(150^{\circ}\mathrm{C}\gt10^{6}\mathrm{s})$ and high endurance $(\gt10^{11})$ under the predicted voltage are also demonstrated.

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3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing

3D Reservoir Computing with High Area Efficiency (5.12 TOPS/...

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2022 IEEE Symposium on VLSI Technology and circuits, VLSI Technology and circuits 2022

作者： Sun, Wenxuan Zhang, Woyu Yu, Jie Li, Yi Guo, Zeyu Lai, Jinru Dong, Danian Zheng, Xu Wang, Fei Fan, Shaoyang Xu, Xiaoxin Shang, Dashan Liu, Ming Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing China University of Chinese Academy of Sciences Beijing China University of Science and Technology of China School of Microelectronics China

ISBN: (纸本)9781665497725

In this work, we realized a three-dimensional (3D) reservoir computing (RC) by utilizing the I-V nonlinearity and short-term memory of the dynamic memristor in 4-layer vertical array. The cycle-to-cycle variation of the dynamic reservoir is improved by parallel memristor configuration. The dimensionality of the reservoir space is increased by input strategy design. After the hardware-software co-optimization, the proposed 3D RC system exhibits high recognition accuracy (90%), low energy consumption (-0.78 pJ /operation), and high area efficiency (5.12 TOPS/mm2). © 2022 IEEE.

关键词： Memristors

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Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,maxof 559 S/m at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec

Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Len...

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2022 IEEE Symposium on VLSI Technology and circuits, VLSI Technology and circuits 2022

作者： Chen, Kaifei Niu, Jiebin Yang, Guanhua Liu, Menggan Lu, Wendong Liao, Fuxi Huang, Kailiang Duan, XinLv Lu, Congyan Wang, Jiawei Wang, Lingfei Li, Mengmeng Geng, Di Zhao, Chao Wang, Guilei Lu, Nianduan Li, Ling Liu, Ming Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Beijing China University of Chinese Academy of Sciences Beijing China Beijing Superstring Academy of Memory Technology 100176 China

ISBN: (纸本)9781665497725

We experimentally prove that amorphous IGZO FET can be scaled down by connected dual-gate design with enhanced electrostatic control. By connected dual-gate operation and scaled dual stacks, the short channel device (LCH=30 nm) achieves near ideal SS of 63 mV/dec and ultra-high on-state current (ION) of 615 A/m at VGS-VTH=2 V&VDS=1 V. By this design, record-high transconductance (Gm) of 559 S/m at VDS=1 V and record-low drain-induced-barrier-lowering (DIBL) of 10 mV/V are achieved, to our best knowledge, among all the a-IGZO transistors with sub-100 nm channel length reported so far. © 2022 IEEE.

关键词： Semiconducting indium compounds

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Improvement of RRAM Uniformity and Analog Characteristics through Localized Metal Doping

Improvement of RRAM Uniformity and Analog Characteristics th...

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2021 China Semiconductor Technology International Conference, CSTIC 2021

作者： Qin, Yabo Wang, Zongwei Chen, Qingyu Ling, Yaotian Wu, Lindong Cai, Yimao Huang, Ru Institute of Microelectronics Peking University Beijing100871 China Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing100871 China

ISBN: (纸本)9781665449458

In this work, the influence of localized metal ion doping on the uniformity and analog behavior in TaOx-based RRAM is investigated. Experimental results show that Al ion local doping can improve the uniformity. The distributions of set/reset voltage and LRS/HRS become tighter. Moreover, the TaOx-based RRAM with Al doping shows excellent analog switching behaviors compared with the device without doping. The underlying mechanism may be explained by the reduced formation energy of oxygen vacancies and relayed traps in the doped area, which makes it easier to form incremental conductive filaments in the regions with high ion doping concentration. © 2021 IEEE.

关键词： RRAM

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NBTI Improvement of HfO2/TiN Gated pMOSFET by Low-Temperature Remote Hydrogen Plasma Treatment

NBTI Improvement of HfO2/TiN Gated pMOSFET by Low-Temperatur...

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2025 IEEE International Reliability Physics Symposium, IRPS 2025

作者： Jiang, Songyi Li, Junjie Yang, Hong Liu, Qianqian Shi, Yunfei Yang, Shuai Wang, Runsheng Wang, Xiaolei Luo, Jun Wang, Wenwu Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Peking University Beijing100871 China

ISBN: (纸本)9798331504779

A remote hydrogen plasma (H∗) technique in pMOSFETs is studied. The Vth shift of H∗-treated device under NBTI stress at 125 °C decreases by 58%∼74% compare to baseline device. The H∗ treatment induces EOT increase due to the increase of the dielectric constant of interfacial layer. It shows that the reduction of interface state density is attributed to the passivation of surface dangling bonds by H∗, which is located near the conduction band of silicon. © 2025 IEEE.

关键词： Plasma deposition

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An Efficient Spiking Neural Network Accelerator with Sparse Weight

An Efficient Spiking Neural Network Accelerator with Sparse ...

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IEEE Biomedical circuits and Systems (BIOCAS)

作者： Zilin Wang Yi Zhong Youming Yang Xiaoxin Cui Yuan Wang Key Laboratory of Microelectronics Devices and Circuits (MoE) MPW Center School of Integrated Circuits Peking University Beijing Advanced Innovation Center for Integrated Circuits Beijing China

Spiking neural network (SNN) is a promising generation of neural networks inspired by biology, which has the advantages of high energy efficiency and hardware-friendly. In SNN, the input is not encoded as real-valued activations but as sequences of binary spikes. The weights are usually stored in the form of crossbars. Due to the unstructured pruning and compression in model training, the weights of the SNN model exhibit spatial sparsity. Recently, many matrix compression algorithms have been applied to on-chip weight storage in SNN accelerators. However, when the stored non-zero values exceed a certain proportion, their storage cost is relatively expensive. In this paper, a sparse compressed spiking neural network accelerator based on bit-mask compression algorithm is presented. Implemented on a FPGA platform, the accelerator can achieve the peak performance of 2.56GSOP/s and the energy efficiency of 1.53GSOP/W.

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