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China Semiconductor Technology International Conference (CSTIC)

作者： Kun Zhong Huaxiang Yin Zhaohao Zhang Fan Zhang Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China Xidian University Key Laboratory of Wide Bandgap Semiconductor Materials

This paper investigates the properties of different Zr compositions in $\mathrm{H}\mathrm{f}_{1-\mathrm{x}}\mathrm{Z}\mathrm{r}_{\mathrm{x}}\mathrm{O}_{2}$ films. Due to the morphotropic phase boundary (MPB) between the orthorhombic ferroelectric phase and the tetragonal anti-ferroelectric phase, a maximum $\kappa$ value of 55 was obtained for 9 nm $\mathrm{H}\mathrm{f}_{0.4}\mathrm{Z}\mathrm{r}_{0.6}\mathrm{O}_{2}$ films. Furthermore, the sufficiently low leakage current of the capacitors was confirmed. Finally, a promising switching endurance of up to $5\times 10^{9}$ cycles was also performed, which becomes one of the driving forces for next-generation dynamic random access memories (DRAM) cell capacitor dielectric materials.

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An AuNPs/Mesoporous NiO/Nickel Foam Nanocomposite as a Miniaturized Electrode for Heavy Metal Detection in Groundwater

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Engineering 2023年第8期27卷 199-208页

作者： Boyuan Xue Qian Yang Kaidong Xia Zhihong Li George Y.Chen Dayi Zhang Xiaohong Zhou State Key Joint Laboratory of Environment Simulation and Pollution Control School of EnvironmentTsinghua UniversityBeijing 100084China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of MicroelectronicsPeking UniversityBeijing 100871China Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things Guangdong and Hong Kong Joint Research Centre for Optical Fiber SensorsShenzhen UniversityShenzhen 518060China College of New Energy and Environment Jilin UniversityChangchun 130021China The Research Institute of Environmental Innovation(Suzhou) Tsinghua UniversitySuzhou 215000China

Heavy metals,notably Pb2+and Cu^(2+),are some of the most persistent contaminants found in *** monitoring of these metals,which relies on efficient,sensitive,cost-effective,and reliable methods,is a *** present a nanocomposite-based miniaturized electrode for the concurrent measurement of Pb2+and Cu^(2+)by exploiting the electroanalytical technique of square wave *** also propose a facile in situ hydrothermal calcination method to directly grow binder-free mesoporous Ni O on a three-dimensional nickel foam,which is then electrochemically seeded with gold nanoparticles(Au NPs).The meticulous design of a low-barrier Ohmic contact between mesoporous Ni O and Au NPs facilitates target-mediated nanochannel-confined electron transfer within mesoporous Ni *** a result,the heavy metals Pb2+(0.020 mg.L^(-1)detection limit;2.0–16.0 mg.L^(-1)detection range)and Cu^(2+)(0.013 mg.L^(-1)detection limit;0.4–12.8 mg.L^(-1)detection range)can be detected simultaneously with high ***,other heavy metal ions and common interfering ions found in groundwater showed negligible impacts on the electrode’s performance,and the recovery rate of groundwater samples varied between 96.3%±2.1%and 109.4%±0.6%.The compactness,flexible shape,low power consumption,and ability to remotely operate our electrode pave the way for onsite detection of heavy metals in groundwater,thereby demonstrating the potential to revolutionize the field of environmental monitoring.

关键词： AuNPs Mesoporous NiO Miniaturized electrode Heavy metal ions Groundwater Square wave voltammetry

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Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors

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Science China(Information Sciences) 2020年第10期63卷 288-290页

作者： Xiaoqiao DONG Ming LI Wanrong ZHANG Yuancheng YANG Gong CHEN Shuang SUN Jianing WANG Xiaoyan XU Xia AN Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Faculty of Information Technology Beijing University of Technology

Dear editor,With the development of VLSI technology,gateall-around (GAA) silicon nano wire transistor(SNWT) has emerged as one of the most potential candidates for ultimately scaled CMOS devices at the end of the technology *** pioneering research studies have demonstrated super scalability and high performance with GAA SNWT [1-3].Whereas,in the practical fabrica-

关键词： gate-all-around nanowire effective gate length effective model asymmetrical

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A novel active-passive protection strategy endows carbonyl iron with excellent intelligent anti-corrosion and microwave absorption dual functional characteristics

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Nano Research 2025年第1期18卷 487-500页

作者： Wei Tian Quanyuan Feng Linbo Zhang Yinfan Liu Xian Jian Longjiang Deng Institute of Microelectronics School of Information Science and TechnologySouthwest Jiaotong UniversityChengdu 611756China National Engineering Researching Centre of Electromagnetic Radiation Control Materials Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of EducationState Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu 611731China The Yangtze Delta Region Institute(Huzhou)&School of Electronic Science and Engineering University of Electronic Science and Technology of ChinaHuzhou 313001China

Carbonyl iron absorbers(CI)face significant challenges in practical applications,such as corrosion,interface bonding failure,detachment,and high maintenance ***,we have developed intelligent self-healing technology based on proactive/passive mechanisms via in situ synthesis of self-healing factors(polydopamine/benzotriazole(PDA/BTA))and physical barrier layers(SiO_(2)/1,1,1,3,3,3-hexamethyl disilazane,SiO_(2)/HMDS)to enhance corrosion resistance,while also being compatible with efficient microwave absorption *** unique multiscale structure gives full play to the utilization of the roles of each functional layer,including the intelligent self-healing features of PDA/BTA,physical shielding and spatial confinement characteristics of SiO_(2)/HMDS,and magnetic-dielectric synergistic mechanism resulted from the good impedance matching characteristics,the conduction loss,the interfacial polarization loss and natural *** asfabricated composites achieved an exceptional minimum reflection loss value of-55.4 dB at 10.7 GHz and the effective absorption band of 7.6 ***,it still exhibits obvious self-healing and corrosion resistance characteristics after 360 h corrosion treatment,ascribed to the self-healing mechanism of PDA/BTA and the blocking intervention effect of SiO_(2)/*** work is considered to pave the way for the synthesis of high-performance magnetic absorbers,especially in enhancing their intelligent self-healing ability in corrosive environments.

关键词： microwave absorption intelligent self-healing technology carbonyl iron multiscale structure magneticdielectric synergistic mechanism

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Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET

Influence of Back Gate Bias on the Hot Carrier Reliability o...

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Annual International Symposium on Reliability Physics

作者： Xinyi Zhang Kewei Wang Fang Wang Jiangjiang Li Zhicheng Wu Duoli Li Bo Li Jianhui Bu Zhengsheng Han Institute of Microelectronics of Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Beijing China State key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing China Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

The hot carrier reliability under different back-gate bias in DSOI nMOSFET is studied. Reverse back-gate bias results in an over-all larger time exponents than the forward back-gate bias, which is attributed to the increased lateral electric field (as supported by TCAD simulation) and consequently a stronger interface state generation (related to SVE mechanisms). Such strong time acceleration is crucial for long term reliability prediction under circuit operation. The abnormal deviation among threshold voltage shift, linear/saturation drain current degradation is observed: through careful inspection of the degradation of the I- V characteristics, the competing role of the interface state generation and hot hole trapping is revealed, with a virtual channel shortening effect as supported by the increased DIBL values.

关键词： Degradation Simulation Hot carriers MOSFET circuits Logic gates Threshold voltage Interface states

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Flash-based in-memory computing for stochastic computing in image edge detection

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Journal of Semiconductors 2023年第5期44卷 145-149页

作者： Zhaohui Sun Yang Feng Peng Guo Zheng Dong Junyu Zhang Jing Liu Xuepeng Zhan Jixuan Wu Jiezhi Chen School of Information Science and Engineering(ISE) Shandong UniversityQingdao 266000China Shandong Sinochip Semiconductors Co.Ltd Jinan 250101China Neumem Co. LtdHefei 230088China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China

The“memory wall”of traditional von Neumann computing systems severely restricts the efficiency of data-intensive task execution,while in-memory computing(IMC)architecture is a promising approach to breaking the *** variations and instability in ultra-scaled memory cells seriously degrade the calculation accuracy in IMC architectures,stochastic computing(SC)can compensate for these shortcomings due to its low sensitivity to cell ***,massive parallel computing can be processed to improve the speed and efficiency of the *** this paper,by designing logic functions in NOR flash arrays,SC in IMC for the image edge detection is realized,demonstrating ultra-low computational complexity and power consumption(25.5 fJ/pixel at 2-bit sequence length).More impressively,the noise immunity is 6 times higher than that of the traditional binary method,showing good tolerances to cell variation and reliability degradation when implementing massive parallel computation in the array.

关键词： in-memory computing stochastic computing NOR flash memory image edge detection

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Arbitrary hue-brightness structural colors with high saturation generated by anisotropic metasurfaces

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Photonics Research 2025年第3期13卷 772-780页

作者： CHONG WANG HE LI LONGJIE LI XIAO SHANG SHENGQIONG CHEN HUIWEN XUE PEIWEN ZHANG JIEBIN NIU YONGLIANG ZHANG LINA SHI State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Department of Electronic and Optical Engineering Space Engineering UniversityBeijing 101416China State Key Laboratory of Semiconductor Physics and Chip Technologies Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

Structural colors have always attracted much attention due to important applications in display devices,imaging security certification,optical data storage,and so *** brightness of structure colors,as the carrier of chiaroscuro information,is the key to making images appear stronger in the spatial and three-dimensional ***,relatively little work has been done on the control of the color brightness,and the reported structures are complex and difficult to ***,we demonstrate a low-aspect-ratio anisotropic metasurface consisting of a PMMA film patterned by arrays of elliptical-shaped holes clamped by two thin aluminum *** utilizing localized surface plasmon resonances,we realize a three-dimensional(3D)HSB(hue,saturation,and brightness)structure color with independent brightness control and enhance the cross-polarization reflection,covering approximately 120%of the s RGB color *** is shown that the ratio of the major and minor axes leads to the independent control of brightness of the structural *** nanoprinting of HSB images with smooth brightness transitions is demonstrated through elaborate design of the metasurface geometry parameters and CMOScompatible micro-nano fabrication *** findings will facilitate the broad range of 3D nanoprinting and modern advanced display applications.

关键词： structural colors hue brightness anisotropic metasurfaces saturation chiaroscuro informationis display devicesimaging security certificationoptical data storageand control color

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Recent advances in two-dimensional layered and non-layered materials hybrid heterostructures

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Chinese Physics B 2022年第10期31卷 231-246页

作者： Haixin Ma Yanhui Xing Boyao Cui Jun Han Binghui Wang Zhongming Zeng Key Laboratory of Opto-electronics Technology Ministry of EducationCollege of MicroelectronicsBeijing University of TechnologyBeijing 100124China Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China Nanchang Nano-Devices and Technologies Division Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNanchang 330200China

With the development of Moore's law, the future trend of devices will inevitably be shrinking and integration to further achieve size reduction. The emergence of new two-dimensional non-layered materials(2DNLMs) not only enriches the 2D material family to meet future development, but also stimulates the global enthusiasm for basic research and application technologies in the 2D field. Van der Waals(vd W) heterostructures, in which two-dimensional layered materials(2DLMs)are physically stacked layer by layer, can also occur between 2DLMs and 2DNLMs hybrid heterostructures, providing an alternative platform for nanoelectronics and optoelectronic applications. Here, we outline the recent developments of2DLMs/2DNLMs hybrid heterostructures, with particular emphasis on major advances in synthetic methods and applications. And the categories and crystal structures of 2DLMs and 2DNLMs are also shown. We highlight some promising applications of the heterostructures in electronics, optoelectronics, and catalysis. Finally, we provide conclusions and future prospects in the 2D materials field.

关键词： 2D layered materials 2D non-layered materials van der Waals heterostructure applications

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Multitarget gas alarm system for high-performance and anti-interference chemical warfare agents simulants detection

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Science China(Technological Sciences) 2025年第3期68卷 349-358页

作者： Yubin YUAN Qiang WU Menglong JIAO Haiyang WU Weihua LIU Xuming WANG Xiangrui BU Gong LI Chuanyu HAN Long HU Xin LI Xiaoli WANG Shool of Microelectronics School of Electronics and Information EngineeringXi’an Jiaotong UniversityXi’an710049China The Key Lab of Micro-nano Electronics and System Integration of Xi’an City Xi’an710049China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou310024China School of Automation and Information Engineering Xi’an University of TechnologyXi’an710048China Key Laboratory for Physical Electronics and Devices of the Ministry of Education Xi’an Jiaotong UniversityXi’an710049China School of Science Xi’an Jiaotong UniversityXi’an710049China

Chemical warfare agents(CWAs)can cause significant harm to health and even death in a very short time even when inhaled in small amounts(~100 mg min/m^(3)).Detection equipment based on conventional techniques,including gas chromatography-mass spectrometry,Raman spectroscopy,fluorescence spectroscopy,and ion mobility spectrometry,have the disadvantages of high cost,long detection time,and high power ***,portable,and convenient equipment for target CWAs detection under interference is a *** this study,we propose an alarm system comprising a multitype micro sensor array and a field-programmable gate array-based readout circuit for CWAs simulants *** common volatile organic compound,temperature,and water vapor interference,the proposed multitype sensor-based detection system realizes an alarm function in less than 20 s with thresholds of 1 ppm dimethyl methylphosphonate(DMMP),4.6 ppm 2,2'-dichlorodiethyl ether(DCE),and 20 ppm SO_(2).Furthermore,the proposed detection system was evaluated outside the laboratory and passed the wilderness test,demonstrating its reliability in the *** believe that the proposed alarm system will contribute to the development of intelligent,portable,low-cost,and anti-interference CWAs detection technology.

关键词： alarm system CWAs simulants surface acoustic wave sensor mixed gas anti-interference

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Three-Dimensional Manifold Microchannel Integrated Heat Sink for High-Performance Computing Chips

Three-Dimensional Manifold Microchannel Integrated Heat Sink...

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Electronics Packaging Technology Conference (EPTC)

作者： Guoran Lu Yuxin Ye Cheng Li Binbin Jiao Yanmei Kong Ruiwen Liu Institute of Microelectronics of the Chinese Academy of Science Beijing China University of Chinese Academy of Science Beijing China Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing Microelectronics Technology Institute

ISBN: (数字)9798331522001

ISBN: (纸本)9798331522018

Generative AI, exemplified by ChatGPT, places heightened demands on the computational power of high-performance computing (HPC) chips, leading to an increase in power consumption. Conventional indirect cooling is limited by two layers of high thermal resistance thermal interface material (TIM), which drastically reduces thermal conduct efficiency. Direct Liquid Cooling (DLC) integrates a microfluidic cooling structure with the package lid and reduces the TIM to a single layer, providing a solution that balances performance and reliability. In this work, we proposed a three-dimensional integrated heat sink (3DIHS) along with an optimized TIM assembly process. The results show that the junction-environment thermal resistance is reduced to 0.31 K/W through process and design optimization. Also, it was implemented on a commercial FPGA device, enabling operation at maximum power levels of 56W with a temperature rise of only 20°C. This study demonstrates the effectiveness of the proposed 3DIHS in managing high heat fluxes in HPC chips.

关键词： Manifolds Power demand Thermal resistance High performance computing Electronic packaging thermal management Heat sinks Heat transfer Field programmable gate arrays Microchannels Periodic structures

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