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Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes

Science China(Information Sciences) 2023年第12期66卷 295-296页

作者： Haoran YU Tiancheng GONG Peng YUAN Yuan WANG Zhaomeng GAO Xiaoxin XU Ying SUN Ran CHENG Jianfeng GAO Junfeng LI Bing CHEN Qing LUO Key Laboratory of Microelectronics Devices and Integration Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Micro-Nano Electronics Zhejiang University

Doped HfO2, as an emerging ferroelectric material, could overcome the shortcomings of traditional ferroelectrics [1].Hf0.5Zr0.5O2（HZO） is a good choice for Hf-doped materials because of its excellent ferroelectric properties and mature preparation process. In our previous studies, we proposed a new HZO switchable ferroelectric diode（FE diode） with several advantages, such as high operating speed,

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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors

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Science China(Information Sciences) 2022年第6期65卷 277-278页

作者： Mengxuan YANG Qianqian HUANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Dear editor,Recently, ferroelectric(FE)-based negative capacitance FET(NCFET) with ferroelectric/dielectric(FE/DE) gate stack has attracted extensive attention due to its capability of sub-60 mV/dec subthreshold swing... 详细信息

关键词： Ferroelectric Negative differential capacitance effect Polarization Low power Subthreshold swing

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Improving interfacial and electrical properties of HfO_(2)/SiO_(2)/p-Si stacks with N_(2)-plasma-treated SiO_(2) interfacial layer

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Rare Metals 2023年第6期42卷 2081-2086页

作者： Xiao-Qiang Chen Yu-Hua Xiong Jun Du Feng Wei Hong-Bin Zhao Qing-Zhu Zhang Wen-Qiang Zhang Xiao-Ping Liang Advanced Electronic Materials Institute General Research Institute for Nonferrous MetalsBeijing100088China State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing100088China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing100029China

The effect of N_(2)-plasma-treated SiO_(2) interfacial layer on the interfacial and electrical characteristics of HfO_(2)/SiO_(2)/p-Si stacks grown by atomic layer deposition(ALD) was *** microstructure and interfacial chemical bonding configuration of the HfO_(2)/SiO_(2)/Si stacks were also examined by high-resolution transmission electron microscopy(HRTEM) and X-ray photoelectron spectroscopy(XPS).Compared with the samples without N2-plasma treatment,it is found that the samples with N2-plasma treatment have less oxygen vacancy density for SiO_(2) interfacial layer and better HfO_(2)/SiO_(2) *** agreement with XPS analyses,electrical measurements of the samples with N2-plasma treatment show better interfacial quality,including lower interface-state density(Dit,9.3 × 1011 cm^(-2)·eV^(-1) near midgap) and lower oxidecharge density(Q_(ox),2.5 × 1012 cm^(-2)),than those of the samples without N_(2)-plasma ***,the samples with N_(2)-plasma treatment have better electrical performances,including higher saturation capacitance density(1.49 μF·cm^(-2)) and lower leakage current density(3.2 × 10^(-6) A·cm^(-2) at V_(g)=V_(fb)-1 V).Furthermore,constant voltage stress was applied on the gate electrode to investigate the reliability of these *** shows that the samples with N_(2)-plasma treatment have better electrical stability than the samples without N_(2)-plasma treatment.

关键词： Metal-oxide-semiconductor High-k Atomic layer deposited N_(2)-plasma treatment Interfacial characteristic Reliability

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In-memory computing based on phase change memory for high energy efficiency

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Science China(Information Sciences) 2023年第10期66卷 20-41页

作者： Luchang HE Xi LI Chenchen XIE Zhitang SONG National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Micro-System and Information Technology Chinese Academy of Sciences School of Microelectronics University of Science and Technology of China

The energy efficiency issue caused by the memory wall in traditional von Neumann architecture is difficult to reconcile. In-memory computing(CIM) based on emerging nonvolatile memory(NVM) is a promising solution to avoid data movement between storage and processors and realize highly energy-efficient computing. Compared with other NVM technologies, phase change random access memory(PCM) exhibits comprehensive performance for analog computing. In this paper, we review advanced PCM techniques,including phase-change materials, mechanisms, and unique properties, as a foundation and inspiration for implementing CIM architecture. Meanwhile, state-of-the-art PCM-based CIM systems are well discussed for high energy efficiency in artificial neural networks, spiking neural networks, and other artificial intelligence(AI) applications. Finally, we present the remaining challenges and potential solutions of CIM for further investigation.

关键词： in-memory computing phase change memory energy efficiency neural network memory wall

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Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes

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IEEE Microwave and Wireless Technology Letters 2025年第4期35卷 444-447页

作者： Li, Qiu-Xuan Li, Yang Liu, Tao Huang, Ren-Pin Zhu, Xia Liu, Peng-Bo Wang, Xiao Chen, Zhi-Wei You, Jie Liu, Zhang-Cheng Ao, Jin-Ping Jiangnan University School of Integrated Circuits Wuxi214122 China Xidian University State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China

Low turn-on GaN Schottky barrier diodes (SBDs) and dedicated rectifiers for microwatt and milliwatt microwave rectification are designed and fabricated for the first time. GaN SBDs with a low turn-on voltage (Von) of 0.32 V, a cutoff frequency (fT) of 139.47 GHz, a breakdown voltage (Vb) of 30 V, and fT × Vb/Von figure of merit (FOM) up to 13.08 THz are achieved by carefully controlling the Ti/N ratios of Schottky anode. Milliwatt and microwatt rectifiers are designed utilizing customized low turn-on GaN SBDs. The measured maximum efficiency of 84.16% and 64.36% as well as ultrawide power dynamic range of 27 dB (-7 to 20 dBm) for milliwatt rectifier and 22 dB (-12 to 10 dBm) for microwatt rectifier are obtained. The result underscores the significant potential of GaN SBDs in applications not only limited to high-power scenarios but also extended to the milliwatt and microwatt regimes of microwave energy harvesting. © 2023 IEEE.

关键词： Gallium nitride

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Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET

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Science China(Information Sciences) 2021年第2期64卷 271-272页

作者： Zhexuan REN Xia AN Gensong LI Xing ZHANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

Dear editor,Strain technology has become a common solution in the semiconductor manufacturing industry since 90-nm technology node to overcome the severe carrier mobility degradation of nanoscale microelectronic devices [1]. Since layout may affect the stress distribution, layout dependent effect(LDE)becomes a serious issue in advanced technology nodes.

关键词： radiation TID LDE 65nm PMOS SA

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Neuromorphic devices, circuits, and Their Applications in Flexible Electronics

IEEE Journal on Flexible Electronics

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IEEE Journal on Flexible Electronics 2024年第1期3卷 42-56页

作者： Wang, Feiyu Zhang, Tongju Dou, Chunmeng Shi, Yi Pan, Lijia Nanjing University Collaborative Innovation Center of Advanced Microstructures School of Electronic Science and Engineering Nanjing210093 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing100029 China

Artificial intelligence (AI) has rapidly evolved and sparked a heightened interest in the field of bionic electronics. A key focus in this field is to emulate biological neural networks and create perceptually sensitive and adaptable neuromorphic devices. These devices are essential components for the next-generation flexible wearables, smart textiles, biomedical devices, and soft robots. The remarkable advantage of flexible neuromorphic devices lies in their ability to directly perceive, store, and analyze diverse information from the external environment. A notable feature is the integration of multisensory inputs in flexible neuromorphic devices, which enables enhanced adaptability to complex and dynamic scenarios that may occur in reality. This comprehensive review examines the structure and functionality of biological synapses and the prospective designs of neuromorphic devices that emulate synaptic functions. We review recent advances in neuromorphic devices and flexible electronic circuits, including different types of neuromorphic devices, such as two-terminal memristors and three-terminal synaptic transistors. We also compare their advantages and limitations. Finally, we discuss the challenges and opportunities for the future development of flexible neuromorphic devices. This review reveals the great potential of neuromorphic devices, circuits, and their applications in flexible electronics and provides valuable insights into the current state-of-the-art and prospects of this field. © 2022 IEEE.

关键词： Memristors

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Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

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Journal of Semiconductors 2024年第7期45卷 40-44页

作者： Yuting Chen Xinlv Duan Xueli Ma Peng Yuan Zhengying Jiao Yongqing Shen Liguo Chai Qingjie Luan Jinjuan Xiang Di Geng Guilei Wang Chao Zhao Beijing Superstring Academy of Memory Technology Beijing 100176China State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.

关键词： In-Ga-Zn-O(IGZO) thermal atomic layer deposition vertical channel thin-film transistor

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A Universal Core Surface-Potential Modeling Methodology for Future Heterogeneous AOS/Si Co-integrated Design 10

A Universal Core Surface-Potential Modeling Methodology for ...

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10th International Symposium on Next Generation Electronics, ISNE 2022

作者： Zhao, Yue Guo, Jingrui Xu, Lihua Huang, Shijie Wang, Lingfei Li, Ling Institute of Microelectronics of the Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing China

ISBN: (纸本)9781665455251

A universal core surface potential modeling methodology is proposed to obtain the continuous explicit solutions to Poisson equation for future heterogeneous AOS/Si co-integrated design, without the necessity to solve implicit equations by numerical iteration or the table lookup method as previous work. This method is compatible to devices with various structures and different channel materials. In this paper, it has been successfully applied to Bulk MOSFET, SOI MOSFET and IGZO-based MOSFET. The fully analytical solutions of the surface potential will contribute to compact expressions of drain current, terminal charge and capacitance, incorporating physics-based and structural parameters. Thus, such a unified high accuracy and efficiency methodology is suitable for surface potential compact model towards future multi-functional heterogeneous integrated circuit design. © 2023 IEEE.

关键词： Table lookup

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Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes

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Chinese Physics B 2023年第8期32卷 404-408页

作者：张涛李若晗苏凯苏华科吕跃广许晟瑞张进成郝跃 Key Laboratory of Wide Band-Gap Semiconductors and Devices School of MicroelectronicsXidian UniversityXi'an 710071China Xi'an Microelectronics Technology Institute Xi'an 710054China School of Aerospace Science and Technology Xidian UniversityXi'an 710071China

Dynamic characteristics of the single-crystal Ga N-passivated lateral AlGaN/GaN Schottky barrier diodes(SBDs)treated with proton irradiation are ***-induced changes including idealized Schottky interface and slightly degraded on-resistance(RON)are observed under 10-Me V proton irradiation at a fluence of 10^(14)cm^(-2).Because of the existing negative polarization charges induced at GaN/AlGaN interface,the dynamic ON-resistance(RON,dyn)shows negligible degradation after a 1000-s-long forward current stress of 50 mA to devices with and without being irradiated by ***,the normalized RON,dynincreases by only 14%that of the initial case after a 100-s-long bias of-600 V has been applied to the irradiated *** high-performance lateral AlGaN/GaN SBDs with tungsten as anode metal and in-situ single-crystal GaN as passivation layer show a great potential application in the harsh radiation environment of space.

关键词： AlGaN/GaN SBDs GaN passivation layer proton irradiation dynamic on-resistance

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