检索结果-内蒙古大学图书馆

SSRN 2024年

作者： Zhu, Xuhao Ma, Yao Bi, Jinshun Xu, Gaobo He, Mu Mei, Fan Yuan, Yihui Li, Shirui Wang, Yulin Zou, Peichun Zhao, Xue Key Laboratory of Microelectronics College of Physics Sichuan University Chengdu610064 China School of Integrated Circuits Key Laboratory of Microelectronics College of Physics Sichuan University Chengdu610064 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China Sichuan Xu Mao Micro Technology Co.Ltd China

HfO2-based ferroelectric random access memory (FeRAM) has attracted tremendous attention in the field of data storage. However, the radiation performance and tolerance of FeRAM have not been investigated comprehensively. In this work, the electrical and structural properties of the W/TiN/Zr-doped HfO2(HZO)/TiN ferroelectric memory after radiation by 5 MeV proton at room temperature (RT) and low temperature (LT) were studied. After performing electrical and piezoresponse force microscopy (PFM) characterization, it was demonstrated that the radiation effect of HZO MFM ferroelectric memory strongly depends on the radiation temperature. The dielectric constant (Εr) and the remanent polarization (2Pr) values of the capacitor first decreased and then increased with the increasing of fluence at RT. Once the HZO thin film was radiated by protons at extremely low temperature, the performance of the HZO memory would be completely degraded. The increased ferroelectric properties due to RT radiation will be partially weakened after annealing at room temperature. The ferroelectric properties of the samples radiated by LT proton radiation would be restored due to the domain unpinning effect. © 2024, The Authors. All rights reserved.

关键词： Ferroelectricity

来源：评论

学校读者我要写书评

暂无评论

Bottom Dielectric Isolation to Suppress Sub-Fin Parasitic Channel of Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets devices

Bottom Dielectric Isolation to Suppress Sub-Fin Parasitic Ch...

引用

2022 China Semiconductor Technology International Conference, CSTIC 2022

作者： Cao, Lei Liu, Yang Wu, Zhenhua Zhang, Qingzhu Yao, Jiaxin Luo, Yanna Xu, Haoqing Zhao, Peng Luo, Kun Wu, Yongqin Bu, Weihai Yin, Huaxiang Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Semiconductor Technology Innovation Center Corporation Beijing100176 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, to suppress the parasitic channel of sub-fin in vertically stacked gate-all-around (GAA) Si nanosheet FETs (NSFETs), the bottom dielectric isolation (BDI) was designed and simulated using TCAD simulation. The results show that the sub-threshold characteristics of the n-type NSFETs are improved by the BDI approach, and the gate capacitance is reduced by 16.98% compared with that of the NSFETs with sub-fin. In addition, the BDI technology can increase the process and electrical stability of the NSFETs. © 2022 IEEE.

关键词： Nanosheets

来源：评论

学校读者我要写书评

暂无评论

Side-chain symmetry-breaking strategy on porphyrin donors enables high-efficiency binary all-small-molecule organic solar cells

引用

SusMat 2024年第3期4卷 204-213页

作者： Wentao Zou Xu Zhang Haojiang Shen Wenqing Zhang Xinyue Jiang Liaohui Ni Can Shen Longlong Geng Xiaotao Hao Yingguo Yang Xunchang Wang Renqiang Yang Yanna Sun Yuanyuan Kan Ke Gao Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion Science Center for Material Creation and Energy ConversionInstitute of Frontier ChemistrySchool of Chemistry and Chemical EngineeringShandong UniversityQingdaoChina School of Physics State Key Laboratory of Crystal MaterialsShandong UniversityJinanChina Shandong Provincial Key Laboratory of Monocrystalline Silicon Semiconductor Materials and Technology College of Chemistry and Chemical EngineeringDezhou UniversityDezhouChina School of Microelectronics Fudan UniversityShanghaiChina Key Laboratory of Optoelectronic Chemical Materials and Devices(Ministry of Education) School of Optoelectronic Materials&TechnologyJianghan UniversityWuhanChina

Side-chain symmetry-breaking strategy plays an important role in developing photovoltaic materials for high-efficiency all-small-molecule organic solar cells(ASM OSCs).However,the power conversion efficiencies(PCEs)of ASM OSCs still lag behind their polymer-based counterparts,which can be attributed to the difficulties in achieving favorable ***,two asymmetric porphyrin-based donors named DAPor-DPP and DDPor-DPP were synthesized,presenting stronger intermolecular interaction and closer molecular stacking compared to the symmetric *** DAPor-DPP:6TIC blend afforded a favorablemorphologywith nanoscale phase separation and more ordered molecular packing,thus achievingmore efficient charge transportation and suppressed charge ***,the DAPor-DPP:6TIC-based device exhibited superior photovoltaic parameters,yielding a champion PCE of 16.62%higher than that of the DDPor-DPP-based device(14.96%).To our knowledge,16.62%can be ranked as one of the highest PCE values among the binary ASM OSC *** provides a prospective approach to address the challenge ofASM OSCs in improving film morphology and further achieving high efficiency via side-chain symmetry-breaking strategy,exhibiting great potential in constructing efficient ASM OSCs.

关键词： all-small-molecule organic solar cells asymmetric side-chain engineering power conversion efficiency small molecule donors

来源：评论

学校读者我要写书评

暂无评论

A Novel Voltage Sensor with Composite Trench Structure for High Voltage IGBT 17

A Novel Voltage Sensor with Composite Trench Structure for H...

引用

17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Yang, Yang Li, Ze-Hong Dong, Li-Hang Li, Wei Jia, Peng-Fei Yang, Zhi-Yu Wan, Li Zhao, Yi-Shang Wang, Tong-Yang Xia, Zi-Ming University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Limited Chongqing401331 China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chengdu610054 China

ISBN: (纸本)9798350361834

A novel voltage sensor with composite trench structure for high voltage IGBT (insulated gate bipolar transistor) is proposed and numerically investigated in this paper. Based on the capacitance matching between the parasitic capacitance of the composite trench structure and the load capacitance (C L ), the sensor voltage (V s ) can replicate a scaled-down version of the IGBT voltage (V ce ). By varying the internal parasitic capacitance and external load capacitance, the designability and controllability of the sensor can be realized, respectively. Simulation results show that, as the structural parameter W mesa increases from 0.5 μm to 2.5 μm, V s increases from 1.45 V to 2.08 V (when V ce =1200 V). Besides, with the increase of C L (from 0.01 pF to 10 pF), V s decreases from 2.0 V to 0.92 V at V ce =1200 V. The results are consistent with the analysis. © 2024 IEEE.

关键词： Insulated gate bipolar transistors (IGBT)

来源：评论

学校读者我要写书评

暂无评论

Prediction of 3D Morphological Features of Nano-Patterns from SEM Images Using a Frequency Domain Approach

Prediction of 3D Morphological Features of Nano-Patterns fro...

引用

International Conference on Extreme Ultraviolet Lithography 2024

作者： Liu, Ge Zhang, Libin Ma, Le Wei, Yayi Su, Yajuan EDA Center Institute of Microelectronics of the Chinese Academy of Sciences No. 3 Bei-Tu-Cheng West Road Chaoyang District Beijing100029 China Yuquan Road Beijing100049 China Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing100029 China

ISBN: (数字)9781510681569

ISBN: (纸本)9781510681552

In advanced lithography nodes, variations in the sidewall angle and height deformation of photoresists can significantly impact production quality, presenting new challenges for metrology techniques. To address these challenges, we first developed a 3D nano-structure modeling toolkit, T3S, capable of generating a wide range of 3D models with diverse nano-structural features. We then employed a Monte Carlo simulator to generate SEM images of these nano-structures under various primary electron energies and detector settings. Then we analyzed the grayscale profiles of these images. By applying fast Fourier transform, we extracted the frequency domain information from the grayscale profiles of the SEM images, successfully establishing a comprehensive SEM frequency domain database of nano-structures with varying 3D features and SEM operating conditions. Furthermore, we developed a frequency domain-based algorithm to match and predict 3D nano-structural features, such as sidewall angle and height, from unknown SEM images. This database and algorithm enable the rapid and reliable assessment of photoresist shape quality, enhancing process control in advanced lithography nodes. © 2024 SPIE.

关键词： Photoresists

来源：评论

学校读者我要写书评

暂无评论

High-Speed, Low-Voltage, Small-Pitch and Robust Otft-Based Integrated Gate Driver for Active-Matrix Displays

SSRN

引用

SSRN 2023年

作者： Wu, Wanming Geng, Di Chen, Chuanke Chuai, Xichen Li, Shuai Lu, Nianduan Li, Ling State key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

We design and fabricate a high-speed, low-voltage, small-pitch and robust integrated gate driver with organic thin-film transistors (OTFTs). The dual-gate OTFT devices have a field effect mobility of 0.78cm2/Vs, and on/off current ratio of above 108. A single stage of the gate driver consists of ten TFTs and two capacitors, with small pitch of 244μm. The fabricated circuit can output minimum pulse width of 5μs, which is compatible to full-high definition (FHD, 1,920×1,080) active-matrix displays with 60Hz frame rate. It can work at input swing of as low as 10V, with VGH2, VGH1 and VGL of 5V, 0V and -10V respectively. With the threshold voltage shift under positive and negative bias stress, the driver shows output signals without significant degradation and demonstrates its high reliability through simulation. © 2023, The Authors. All rights reserved.

关键词： Thin film transistors

来源：评论

学校读者我要写书评

暂无评论

Structural plasticity-based hydrogel optical Willshaw model for one-shot on-the-fly edge learning

引用

InfoMat 2023年第4期5卷 48-59页

作者： Dingchen Wang Dingyao Liu Yinan Lin Anran Yuan Woyu Zhang Yaping Zhao Shaocong Wang Xi Chen Hegan Chen Yi Zhang Yang Jiang Shuhui Shi Kam Chi Loong Jia Chen Songrui Wei Qing Wang Hongyu Yu Renjing Xu Dashan Shang Han Zhang Shiming Zhang Zhongrui Wang Department of Electrical and Electronic Engineering The University of Hong KongHong Kongthe People's Republic of China ACCESS-AI Chip Center for Emerging Smart Systems InnoHK CentersHong Kong Science ParkHong Kongthe People's Republic of China School of Computer Science and Engineering Faculty of Innovation EngineeringMacao University of Science and TechnologyMacaothe People's Republic of China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijingthe People's Republic of China Collaborative Innovation Center for Optoelectronic Science Technology International Collaborative Laboratory of 2D Materials for OptoelectronicsScience and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhenthe People's Republic of China School of Microelectronics Southern University of Science and TechnologyShenzhenthe People's Republic of China Microelectronics Thrust Function Hub of the Hong Kong University of Science and Technology(Guangzhou)Guagndongthe People's Republic of China

Autonomous one-shot on-the-fly learning copes with the high privacy,small dataset,and in-stream data at the *** such learning on digital hardware suffers from the well-known von-Neumann and scaling *** optical neural networks featuring large parallelism,low latency,and high efficiency offer a promising ***,ex-situ training of conventional optical networks,where optical path configuration and deep learning model optimization are separated,incurs hardware,energy and time overheads,and defeats the advantages in edge ***,we introduced a bio-inspired material-algorithm co-design to construct a hydrogel-based optical Willshaw model(HOWM),manifesting Hebbian-rule-based structural plasticity for simultaneous optical path configuration and deep learning model optimization thanks to the underlying opto-chemical *** first employed the HOWM as an all optical in-sensor AI processor for one-shot pattern classification,association and *** then leveraged HOWM to function as a ternary content addressable memory(TCAM)of an optical memory augmented neural network(MANN)for one-shot learning the Omniglot *** HOWM empowered one-shot on-the-fly edge learning leads to 1000boost of energy efficiency and 10boost of speed,which paves the way for the next-generation autonomous,efficient,and affordable smart edge systems.

关键词： associative memory hydrogel one-shot learning optical neural network structural plasticity Willshaw model

来源：评论

学校读者我要写书评

暂无评论

Optimal impurity distribution model and experimental verification of variation of lateral doping termination

引用

Chinese Physics B 2023年第4期32卷 724-729页

作者：任敏叶昶宇周建宇张新郑芳马荣耀李泽宏张波 State key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Guangdong Institute of Electronic Information Engineering University of Electronic Science and Technology of ChinaDongguan 523808China Wuxi China Resources Huajing Microelectronics Co.LTD Wuxi 214061China

Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD)and its ion-injection mask design method are proposed and *** comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD(T-VLD).Vertical double diffusion MOSFET(VDMOS)with OID-VLD achieved breakdown voltage(BV)of 1684 V and passed the 168 hours 100℃-110℃-120℃-125℃high-temperature reverse bias(HTRB)test,while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120℃HTRB test.

关键词： variation of lateral doping(VLD) junction termination breakdown voltage reliability

来源：评论

学校读者我要写书评

暂无评论

A CMOS Time-of-Flight Image Sensor with High Dynamic Range Digital Pixel 14

A CMOS Time-of-Flight Image Sensor with High Dynamic Range D...

引用

14th IEEE International Conference on ASIC, ASICON 2021

作者： Yu, Shanzhe Zhang, Yacong Zhou, Fei Lu, Wengao Lei, Shuyu Chen, Zhongjian Peking University Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics China ABAX Sensing Electronic Technology Ningbo China

ISBN: (纸本)9781665411493

To widen measuring range and suppress background light, a CMOS time-of-flight image sensor with high dynamic range digital pixel is proposed. The sensing charge is quantized by extended-counting analogue-to-digital converter (ADC) which consists of pixel coarse quantization and column fine quantization. To maximize dynamic range in limited pixel area, the coarse quantization circuit is shared by 2×2 pixels, in which a novel up/down counter with a small number of transistors is proposed. Based on the pixel circuit, a 32×32 prototype TOF imager with 12μm-pitch digital pixel is designed in 0.11μm 1P4M CMOS image sensor technology. Simulation results show that a 104.6dB dynamic range of this ADC for wide measuring range is achieved at a frame rate of 50Hz. © 2021 IEEE.

关键词： Image sensors

来源：评论

学校读者我要写书评

暂无评论

Generation of single-focus phase singularity by the annulusquadrangle-element coded binary square spiral zone plates

引用

Science China(Physics,Mechanics & Astronomy) 2022年第9期65卷 72-78页

作者： Huaping Zang Zhuanglei Miao Mengguang Wang Quanping Fan Lai Wei Chuanke Wang Weimin Zhou Yilei Hua Leifeng Cao Xinlian Xue Haizhong Guo Key Laboratory of Material Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Science and Technology on Plasma Physics Laboratory Laser Fusion Research CenterChina Academy of Engineering PhysicsMianyang 621900China Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Engineering Physics Shenzhen Technology UniversityShenzhen 518118China Collaborative Innovation Center of Light Manipulations and Applications Shandong Normal UniversityJinan 250358China

Optical vortices(OVs) with unique square symmetry are widely used in various applications including particle manipulation,microscopy, and image processing. However, the undesired higher-order foci introduced by the conventional vortex lens such as square spiral zone plates(SSZPs) may lead to additional artifacts and thus degrade contrast sensitivity. In this endeavor, herein,we propose a methodology to combine the merit of SSZPs and the advantage of Gabor zone plates(GZPs) in establishing a specific single optical element, termed binary single focused square spiral zone plates(BSSZPs). In contrast to the abrupt transitions of the SSZPs, our central idea aims to realize the sinusoidal transmittance along the radial direction of SSZPs by a series of randomly distributed annulus-quadrangle-shaped nanometer structure apertures. The innovative design can simultaneously generate OVs with unique square symmetry, and eliminate the interference of higher-order foci along the propagation direction. Guided by our theoretical predication, the focusing property of such optics was further experimentally *** findings are expected to direct new avenue towards improving the performance of optical image processing and alignment system.

关键词： optical vortices higher-order diffraction spiral zone plates topological charges

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：