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A near-infrared all-fiber mode monitor based on the mini-two-path Mach-Zehnder interferometer

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves 2025年第3期44卷 351-356页

作者： Zhu, Xiao-Jun Liu, Yu Wu, Yue Zhuang, Hao-Ran Sun, Dan Shi, Yue-Chun Cao, Juan Yang, Yong-Jie School of Microelectronics and Integrated Circuits Jiangsu Key Laboratory of Semi. Dev. & IC Design Package and Test） Nantong University Nantong226019 China Peking University Yangtze Delta Institute of Optoelectronics Nantong226019 China Yongjiang Laboratory Ningbo315202 China

A novel near-infrared all-fiber mode monitor based on a mini-two-path Mach-Zehnder interferometer （MTP-MZI）is proposed. The MTP-MZI mode monitor is created by fusing a section of（no-core fiber ，NCF）and a（single-mode fiber ，SMF）together with an optical fiber fusion splicer，establishing two distinct centimeter-level optical transmission paths. Since the high-order modes in NCF transmit near-infrared light more sensitively to curvature-induced energy leakage than the fundamental mode in SMF，the near-infrared high-order mode light leaks out of NCF when the curvature changes，causing the MTP-MZI transmission spectrum to change. By ana⁃ lyzing the relationship between the curvature，transmission spectrum，and spatial frequency spectrum，the modes involved in the interference can be studied，thereby revealing the mode transmission characteristics of near-infra⁃ red light in optical fibers. In the verification experiments，higher-order modes were excited by inserting a novel hollow-core fiber（HCF）into the MTP-MZI. When the curvature of the MTP-MZI changes，the near-infrared light high-order mode introduced into the device leaks out，causing the transmission spectrum to return to its origi⁃ nal state before bending and before the HCF was spliced. The experimental results demonstrate that the MTP-MZI mode monitor can monitor the fiber modes introduced from the external environment，providing both theoretical and experimental foundations for near-infrared all-fiber mode monitoring in optical information systems. © 2025 Chinese Optical Society. All rights reserved.

关键词： Infrared devices

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Enhanced hole transport of nonpolar InGaN-based light-emitting diodes with lateral p-type superlattice doping structure

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Fundamental Research 2024年

作者： Tao, Hongchang Xu, Shengrui Zhang, Yachao Su, Huake Gao, Yuan Liu, Xu Ding, Ruixue Xie, Lei Wang, Haitao Zhang, Jincheng Hao, Yue State Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology School of Microelectronics Xidian University Xi'an 710071 China Key Laboratory of Analog Integrated Circuits and Systems Ministry of Education School of Microelectronics Xidian University Xi'an 710071 China

In this work, we propose a novel structure for nonpolar (10–10)-plane InGaN-based light-emitting diode (LED) using a lateral p-type Al0.2Ga0.8N/GaN superlattice structure as the hole injection layer. The main objecti... 详细信息

In this work, we propose a novel structure for nonpolar (10–10)-plane InGaN-based light-emitting diode (LED) using a lateral p-type Al_0.2Ga_0.₈N/GaN superlattice structure as the hole injection layer. The main objective is to increase the hole concentration and facilitate vertical hole injection. The nonpolar InGaN-based LED lacks polarization along the growth plane (10–10), but the lateral direction along [0001] exhibits strong polarization. Therefore, the Al_0.2Ga_0.₈N/GaN superlattice structure, which is periodic along the [0001] direction, induces net polarization charges at the GaN/Al_0.2Ga_0.₈N interface, resulting in increased ionization rates of the acceptors. Additionally, the high-density two-dimensional hole gases formed at the Al_0.2Ga_0.₈N/GaN interfaces along the [0001] direction can efficiently inject vertically into the quantum wells. Based on the numerical simulation results, the proposed LED structure offers improved electrical characteristics, effective hole injection, and enhanced optical performance compared to the nonpolar LED with conventional p-type doping structure. © 2024

关键词： Lateral superlattice structure Light-emitting Diodes (LEDs) Nitrides Nonpolar

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MARS: a Multiscale Ab initio Reliability Simulator for Advanced Si and 2D Material Based MOSFETs

MARS: a Multiscale Ab initio Reliability Simulator for Advan...

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2024 IEEE International Electron devices Meeting, IEDM 2024

作者： Liu, Yue-Yang Xu, Guang-Hua Xiong, Tao Li, Wen-Feng Zhao, Yu Liu, Ting-Wei Wang, Zirui Wang, Runsheng Wang, Lin-Wang Jiang, Xiangwei State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China School of Microelectronics Fudan University Shanghai200433 China School ofIntegrated Circuits Peking University Beijing100871 China Department of Mathematical and Physical Sciences National Natural Science Foundation of China China

ISBN: (纸本)9798350365429

We propose an accurate reliability simulator, MARS (short for Multiscale Ab initio Reliability Simulator), that works for both industrial Si MOSFET and emerging two-dimensional (2D) material FET. It is composed of three blocks, namely the ab initio database of defects and defect-precursors, the physical calculator of charge trapping rates and defect creation rates, and the compact simulator of device parameter shift which is largely inspired by the open-source code Comphy. It has the following features and advantages: (1) All the defect fingerprints are obtained by ab initio calculations on atomistic interfaces models, including Si/SiO2/HfO2 and WSe2/SiO2. (2) The Marcus charge transfer theory is adopted to calculate the charge trapping/detrapping rates, and no empirical parameter or approximation is used. (3) It is able to simulate both BTI and HCD issues in Si MOSFETs, and the hysteresis issue in 2D FETs. (4) Excellent agreements between simulation and experimental data are presented. © 2024 IEEE.

关键词： MOSFET devices

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Effect of conductive filament morphology on soft error of oxide based Resistive Random Access Memory

Effect of conductive filament morphology on soft error of ox...

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2021 IEEE International Conference on Integrated circuits, Technologies and Applications, ICTA 2021

作者： Zheng, Xu Yu, Jie Sun, Wenxuan Lai, Jinru Dong, Danian Xing, Guozhong Xu, Xiaoxin Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing China University of Chinese Academy of Sciences China

ISBN: (纸本)9781665417471

The unpredictable soft-error is an important reliability issue hindering the application of the Resistive random-access memory (RRAM). In this paper, we investigated the influence of conductive filament (CF) morphology on the soft-error during the reprogrammable operation. Different filament morphology could be achieved by adopting different programing scheme for forming operation in the oxide RRAM with the structure of TiN/IL/TaOx /TiN. Hourglass shaped filament is more likely to be formed by using the bidirectional forming (Bi-F) scheme and shows more soft-error during the endurance measurement. The mechanism could be explained by the recombination of oxygen ions and oxygen vacancies in the active regions. This paper has guiding significance for the memory optimization and application. © 2021 IEEE.

关键词： RRAM

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An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-level Interface Trap

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IEEE Access 2025年 13卷 93481-93490页

作者： Zhang, Tiexin Liu, Fanyu Shu, Lei Chen, Siyuan Wang, Yuchong Wu, Yuchen Wan, Jing Xu, Yong Li, Shi Ding, Yuyang Li, Bo Han, Zhengsheng Ye, Tianchun Institute of Microelectronics of the Chinese Academy of Sciences The Key Laboratory of Science and Technology on Silicon Devices Beijing100029 China The University of Chinese Academy of Sciences Beijing100049 China Fudan University School of Microelectronics Shanghai200433 China Nanjing University of Posts and Telecommunications School of Microelectronics Nanjing210003 China China Institute of Atomic Energy Beijing102413 China National Institute of Metrology Beijing100029 China

In this paper, the threshold voltage (Vth) of Schottky barrier field effect transistors (SBFETs) based on ultra-thin silicon on insulator (SOI) wafer shift induced by electrical test is analyzed. Repeated testing gives rise to a positive shift of the Vth which is similar to the constant voltage stress effect found in two-dimensional material. The series resistance of Source and Drain (Rsd), mobility (μ), and trapped charge are studied. The positive ΔVth is independent of the Rsd and μ, but related to the deep-level acceptor interface trap which is charged during test. The main reason for trap charging is that the Source and Drain contact prepared by metal deposition cannot provide electrons for trap capturing before testing. In order to compensate the ΔVth induced by test, a deep-level trap charging method is proposed. The necessity of this new test method is verified by irradiation experiments. © 2013 IEEE.

关键词： Schottky barrier diodes

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β-GaO Lateral Schottky Barrier Diodes with > 10 kV Breakdown Voltage and Anode Engineering

IEEE Electron Device Letters

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IEEE Electron Device Letters 2023年第10期44卷 1684-1687页

作者： Wang, Chenlu Yan, Qinglong Zhang, Chaoqun Su, Chunxu Zhang, Kun Sun, Sihan Liu, Zhihong Zhang, Weihang Alghamdi, Sami Ghandourah, Emad Zhang, Chunfu Zhang, Jincheng Zhou, Hong Hao, Yue Xidian University Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xi'an710071 China Guangzhou Institute of Technology Xidian University Guangzhou Wide Band Gap Semiconductor Innovation Center Guangzhou510555 China King Abdulaziz University Department of Electrical and Computer Engineering Jeddah21589 Saudi Arabia

In this letter, we demonstrated β-Ga2O3 lateral Schottky barrier diodes (SBDs) with breakdown voltage (BV) over 10 kV via anode engineering techniques. Postanode deposition annealing (PAA) was implemented to enhance the Schottky barrier height (SBH) to minimize the leakage current and suppress the interface state density (Dit) by over 1 order of magnitude. It is found that the Dit was extracted to be only 3 × 1010 cm-2eV-1 at the energy level near the conduction band after the PAA treatment. Benefiting from the PAA and the coupled as well as the carefully designed dual field-plate (FP) structure, the BV of the SBD was enhanced from about 4 kV to over 10 kV while the turn-on voltage (Von) for those SBDs remained approximately at 1 V. These findings show the immense potential of anode engineered Ga2O3 diodes for future high-voltage and high-power electronic systems. © 1980-2012 IEEE.

关键词： Deposition

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The Roadmap of 2D Materials and devices Toward Chips

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Nano-Micro Letters 2024年第6期16卷 343-438页

作者： Anhan Liu Xiaowei Zhang Ziyu Liu Yuning Li Xueyang Peng Xin Li Yue Qin Chen Hu Yanqing Qiu Han Jiang Yang Wang Yifan Li Jun Tang Jun Liu Hao Guo Tao Deng Songang Peng He Tian Tian‑Ling Ren School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100049People’s Republic of China School of Microelectronics Fudan UniversityShanghai 200433People’s Republic of China State Key Laboratory of Dynamic Measurement Technology Shanxi Province Key Laboratory of Quantum Sensing and Precision MeasurementNorth University of ChinaTaiyuan 030051People’s Republic of China High‑Frequency High‑Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029People’s Republic of China School of Electronic and Information Engineering Beijing Jiaotong UniversityBeijing 100044People’s Republic of China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049People’s Republic of China IMECAS-HKUST-Joint Laboratory of Microelectronics Beijing 100029People’s Republic of China

Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s ***-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation ***,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given *** 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are ***,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are ***,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.

关键词： Two-dimensional materials Roadmap Integrated circuits Post-Moore era

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Integrated Organic Electrochemical Transistors for Serotonin Detection and Synaptic Plasticity

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IEEE Journal of the Electron devices Society 2025年

作者： Xie, Yifan Jin, Qingqing Cheng, Miao Tian, Yue Wang, Jinyao Chu, Jingyun Liu, Changrui Li, Mengmeng Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China Chinese Academy of Sciences Institute of Microelectronics Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China

Organic electrochemical transistors (OECTs) have gained increasing attention for their potential in neuromorphic electronics and neurotransmitter sensing, thanks to their inherent low-power operation and high sensitivity. This study introduces an integrated on-chip Ag/AgCl gate architecture for OECTs, which not only exhibits identical performance with devices using traditional external gates but also enables the integration of a uniform 3W3 transistor array. The resulting array demonstrates consistent performance across individual devices, characterized by uniform transconductance, on/off ratios, threshold voltages, and charge-carrier mobility. Notably, these OECTs function as highly sensitive biosensors for serotonin detection, achieving a detection limit of 0.5 nM. Furthermore, exposure to serotonin triggers a transition from short-term to long-term plasticity in the OECTs, mirroring the processes underlying synaptic memory formation. These findings open new avenues for the development of large-area bioelectronics and neuromorphic computing systems. © 2013 IEEE.

关键词： Integration

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Experimental Demonstration of A CT-FeFET Array with Intrinsic Long-Short-Term Plasticity for Low-Cost Trajectory Prediction

Experimental Demonstration of A CT-FeFET Array with Intrinsi...

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International Electron devices Meeting (IEDM)

作者： Chao Li Jie Yu Xumeng Zhang Zhaohao Zhang Fangduo Zhu Siyuan Ouyang Pei Chen Lingli Cheng Gaobo Xu Qingzhu Zhang Huaxiang Yin Qi Liu Ming Liu State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

Trajectory prediction is a vital function in the auto-driving field, typically achieved with a long short-term memory network. Static IMC technology accelerates the computing of long-term parameters, while the execution of short-term parameters faces great buffer overhead. Inspired by the fused long-short-term synaptic plasticity in biology, here, we proposed a dynamic IMC strategy based on a charge-trapping FeFET array with intrinsic long-short-term plasticity. The long-term weights are stored in the ferroelectric domain, while the short-term weights are in-situ dynamically operated in a charge-trapping domain, eliminating the external caching process. We further demonstrated a dynamic IMC neuromorphic system built on this array for performing trajectory prediction of moving vehicles, achieving more than 1000x and 4x improvements than GPU in power consumption and memory overhead.

关键词： Performance evaluation Power demand Neuromorphics Memory management Graphics processing units Trajectory Vehicle dynamics Synapses Long short term memory FeFETs

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Cell Structure and Process Integration of a Novel 2T0C Technology for High-Density Dram Application

Cell Structure and Process Integration of a Novel 2T0C Techn...

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China Semiconductor Technology International Conference (CSTIC)

作者： Zheng-Yong Zhu Bok-Moon Kang Jing Zhang Xin-Lv Duan Jin-Juan Xiang Guan-Hua Yang Di Geng Wang Dan Xie-Shuai Wu Ming-Xu Liu Gui-Lei Wang Chao Zhao Beijing Superstring Academy of Memory Technology Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

A new DRAM 2T0C cell is introduced to resolve those special issues for traditional 2T0C DRAM. In this technology, the read transistor holds dual gates. The data is stored in one gate of read transistor, and the other gate is used to control read operation. By writing different-level voltages into storage gate, the read transistor will have different threshold voltages by using the other gate as control gate. Compared with 1T1C DRAM, read operation in this new technology is non-destructive and therefore no explicit capacitor is required. Low leakage is essential for write transistor to obtain long data retention time. A few cell structures of this new 2T0C technology are discussed for high-density DRAM application, and challenges of process integration is also analyzed.

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