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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Yi Zhong Xiaoxin Cui Yisong Kuang Kefei Liu Yuan Wang Ru Huang Key Laboratory of Microelectronics Devices and Circuits Institute of Microelectronics Peking University Beijing China

Event-based spiking neural network (SNN) has displayed a promising prospect to realize real-time, efficient and intelligent hardware platforms. Whereas great efforts are still being appealed to explore the possibility of introducing online learning abilities to neuromorphic systems. In this paper, a 28-nm CMOS neuromorphic processor is presented, fulfilling online learning by adopting counter and lookup table (LUT) based spike-timing-dependent plasticity (STDP) rule. Designed to work at high-precision scenarios, the presented processor integrates up to 1024 neurons and 256K signed 9-bit synapses. It also ensures chip array interconnection to fit large neural networks. Moreover, by utilizing the sparse property of spike events to minimize activity rate, the typical power consumption is further reduced to 3.348mW for training MNIST dataset.

关键词： Training Power demand Neuromorphics Table lookup System-on-chip Biological neural networks Synapses

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Enzyme-functionalized field-effect transistors based on liquid-metal-derived ultrathin SnO2 films for glucose detection

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Science China Materials 2025年 1-9页

作者： Li, Zhiwei Yu, Fuhai He, Yahua Yang, Yang Jiang, Lei Tan, Lun Yang, Liu Xiong, Juan Wan, Meilin Hu, Yongming Gu, Haoshuang Wang, Xiaolin Wang, Zhao Hubei Key Laboratory of Micro-Nano Electronic Materials and Devices Key Laboratory of Intelligent Sensing System and Security of the Ministry of Education School of Microelectronics Hubei University Wuhan China Institute for Superconducting and Electronic Materials Australian Institute for Innovative Materials University of Wollongong Wollongong Australia

The rising global incidence of diabetes necessitates the development of innovative glucose monitoring technologies to enhance patient care and disease management. Non-invasive glucose detection through sweat analysis offers continuous, painless, and user-friendly solutions. However, challenges remain regarding sensitivity and selectivity. To address this issue, we utilize ultrathin SnO2 films, which exhibit exceptional electrical sensitivity to surface potential changes, as the active channel in back-gate field effect transistor (FET)-based glucose sensors. These ultrathin SnO2 films are prepared by annealing atomically thin tin oxides exfoliated from liquid Sn-Bi. The hydroxyl groups on the defective surface serve as effective anchoring sites for stable glucose oxidase (GOX) immobilization. Under optimal device design, enzymatic glucose oxidation results in positive charge accumulation on the SnO2 layers, which modulates charge carrier density and enhances channel current. This effect is amplified by the FET’s subthreshold characteristics under negative back-gate voltage, enabling rapid, highly sensitive and selective glucose sensing. The proposed FET sensor achieves an ultra-high sensitivity of 1211.11 µA cm2 µM−1 and demonstrates near-specific glucose detection amidst other substances in human sweat, indicating its significant potential for non-invasive, continuous glucose monitoring in practical applications.

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D2D Variation Aware DTCO for Novel Vertical a-IGZO-FETs in Large-Scale M3D 2TOC DRAM Bit Cell Evaluation via Statistical Modeling Methodology

D2D Variation Aware DTCO for Novel Vertical a-IGZO-FETs in L...

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International Conference on Simulation of Semiconductor Processes and devices (SISPAD)

作者： Yue Zhao Yong Yu Jingrui Guo Lingfei Wang Nan Yang Jianpeng Jiang Yanan Lu Menglong Zhou Shijie Huang Lihua Xu Zhenhua Wu Guanhua Yang Di Geng Guilei Wang Bryan Kang Chao Zhao Ling Li Ming Liu Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Beijing Superstring Academy of Memory Technology Beijing China

ISBN: (数字)9798331516352

ISBN: (纸本)9798331516369

Device nonuniformity of ultra-scaled novel vertical a-IGZO-FETs is induced by multi-sources, such as dimension variation and material disorder, limiting large-scale DRAM design. Particularly, fluctuation of disorders in an amorphous channel exhibits a great impact on density of states (DOS) contributing to statistical effects on gate controllability and transport mechanisms. To clarify this issue, TCAD simulations are conducted by adjusting geometric dimensions and DOS, and corresponding statistical characteristics (e.g., on-voltage and on-current etc.) are extracted from up to 80 samples of down to channel length of 50nm. Such effects are further incorporated into a surface-potential based physics compact model via calibration to experiments. Using this model, the vertical a-IGZO-FET-based 2TOC DRAM is firstly investigated with the statistical analysis of Write/Read performances, supporting device variation aware DTCO flow of future extremely large-scale and high-density M3D memory.

关键词： Semiconductor device modeling Performance evaluation Solid modeling Analytical models Statistical analysis Random access memory Feature extraction Semiconductor process modeling Device-to-device communication Three-dimensional integrated circuits

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First Large-Scale (68 × 25 × 5 nm3) Atomistic Modeling for Accurate and Efficient Etching Process Based on Machine Learning Molecular Dynamics (MLMD)

First Large-Scale (68 × 25 × 5 nm3) Atomistic Modeling for...

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International Electron devices Meeting (IEDM)

作者： Zemeng Feng Ziyi Hu Tong Yu Panpan Lai Rui Ge Hua Shao Dashan Shang Zhiqiang Li Kui Xu Junjie Li Rui Chen Ling Li State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

Revealing the reaction mechanisms in manufacturing advanced devices is crucial for enhancing performance at nodes below 3 nm. In this study, we introduce the first large-scale atomistic model utilizing a machine learning molecular dynamics (MLMD) framework. This model simulates the lateral isotropic selective etching process of SiO 2 /Si stack structures in Gate-all-around field-effect transistors (GAAFETs) using F* radical plasma. The dataset for this model is generated using active learning strategies based on search for F* radical reacting with Si(100) substrate. Our simulation spans $68\times 25\times 5\ \text{nm}^{3}$ , involving over 600,000 atoms, and demonstrates a $4\times$ improvement in model error for etching reaction trends compared to the classic molecular dynamics (CMD) method. Additionally, the model achieves a typical runtime of 16.7 hours, representing a $\sim 44.9\times$ speedup over CMD. Moreover, the simulation provides detailed reaction path and uncovers the mechanisms behind lateral etching. This framework paves the way for potential atom-to-device multi-scale process modeling, contributing to Design Technology Co-optimization (DTCO).

关键词： Performance evaluation Runtime Process modeling Machine learning Market research Etching Plasmas Manufacturing Transistors Substrates

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Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400℃

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Chinese Physics B 2021年第2期30卷 567-572页

作者： Si-Cheng Liu Xiao-Yan Tang Qing-Wen Song Hao Yuan Yi-Meng Zhang Yi-Men Zhang Yu-Ming Zhang Key Laboratory of Wide Band Gap Semiconductor Materials and Devices Xidian UniversityXi'an 710071China School of Microelectronics Xidian UniversityXi'an 710071China XiDian-WuHu Research Institute WuHu 241000China

This paper presents the development of lateral depletion-mode n-channel 4 H-SiC junction field-effect transistors(LJFETs)using double-mesa process toward high-temperature integrated circuit(IC)*** room temperature,the fabricated LJFETs show a drain-to-source saturation current of 23.03μA/μm,which corresponds to a current density of 7678 A/cm^(2).The gate-to-source parasitic resistance of 17.56 kΩ·μm is reduced to contribute only 13.49%of the on-resistance of 130.15 kΩ·μm,which helps to improve the transconductance up to 8.61μS/μ*** temperature characteristics of LJFETs were performed from room temperature to 400℃.At temperatures up to 400℃in air,it is observed that the fabricated LJFETs still show normally-on operating *** drain-to-source saturation current,transconductance and intrinsic gain at 400℃are 7.47μA/μm,2.35μS/μm and 41.35,*** results show significant improvement over state-of-the-art and make them attractive for high-temperature IC applications.

关键词： junction field-effect transistors high temperature 4H-SiC depletion-mode

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Near-infrared carbon nanodots for effective identification and inactivation of Gram-positive bacteria

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Nano Research 2022年第3期15卷 1699-1708页

作者： Wen-Bo Zhao Rui-Ting Wang Kai-Kai Liu Meng-Ru Du Yong Wang Yu-Qi Wang Rui Zhou Ya-Chuan Liang Ruo-Nan Ma Lai-Zhi Sui Qing Lou Lin Hou Chong-Xin Shan Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Materials PhysicsMinistry of Educationand School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China School of Pharmaceutical Sciences Key Laboratory of Targeting Therapy and Diagnosis for Critical DiseasesCollaborative Innovation Center of New Drug Research and Safety EvaluationZhengzhou UniversityZhengzhou 450001China Henan Key Laboratory of Ion-beam Bioengineering School of Agricultural ScienceZhengzhou UniversityZhengzhou 450052China State Key Laboratory of Molecular Reaction Dynamics Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 116023China

An unacceptable increase in antibacterial resistance has arisen due to the abuse of multiple classes of broad-spectrum ***,it is significant to develop new antibacterial agents,especially those that can accurately identify and kill specific ***,we demonstrate a kind of perilla-derived carbon nanodots(CNDs),integrating intrinsic advantages of luminescence and photodynamic,providing the opportunity to accurately identify and kill specific *** CNDs have an exotic-doped andπ-conjugated core,vitalizing them near-infrared(NIR)absorption and emission properties with photoluminescence quantum yield of 21.1%;hydrophobic chains onto the surface of the CNDs make them to selectively stain Gram-positive bacteria by insertion into their *** to the strong absorption in NIR region,reactive oxygen species are in situ generated by the CNDs onto bacterial membranes under 660 nm irradiation,and 99.99%inactivation efficiency against Gram-positive bacteria within 5 min can be *** vivo results demonstrate that the CNDs with photodynamic antibacterial property can eliminate the inflammation of the area affected by methicillin-resistant Staphylococcus aureus(MRSA),and enabling the wound to be cured quickly.

关键词： carbon nanodots near-infrared emission specific identification anti-bacteria photodynamic therapy

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Trigger mechanism of PDSOI NMOS devices for ESD protection operating under elevated temperatures

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Chinese Physics B 2021年第7期30卷 613-618页

作者： Jia-Xin Wang Xiao-Jing Li Fa-Zhan Zhao Chuan-Bin Zeng Duo-Li Li Lin-Chun Gao Jiang-Jiang Li Bo Li Zheng-Sheng Han Jia-Jun Luo Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100029China

Trigger characteristics of electrostatic discharge(ESD)protecting devices operating under various ambient temperatures ranging from 30℃to 195℃are *** studied ESD protecting devices are the H-gate NMOS transistors fabricated with a 0.18-μm partially depleted silicon-on-insulator(PDSOI)*** measurements are conducted by using a transmission line pulse(TLP)test *** different temperature-dependent trigger characteristics of groundedgate(GGNMOS)mode and the gate-triggered(GTNMOS)mode are analyzed in *** underlying physical mechanisms related to the effect of temperature on the first breakdown voltage V_(T1)investigated through the assist of technology computer-aided design(TCAD)simulation.

关键词： ESD trigger voltage temperature GGNMOS GTNMOS TCAD

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Active tunable terahertz bandwidth absorber based on single layer graphene

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Communications in Theoretical Physics 2023年第4期75卷 106-113页

作者： Wenxin Li Yingting Yi Hua Yang Shubo Cheng Wenxing Yang Huafeng Zhang Zao Yi Yougen Yi Hailiang Li School of Physics and Optoelectronic Engineering Yangtze UniversityJingzhou 434023China College of Physics and Electronics Central South UniversityChangsha 410083China School of Science Lanzhou University of TechnologyLanzhou 730050China Joint Laboratory for Extreme Conditions Matter Properties Southwest University of Science and TechnologyMianyang 621010China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

In this paper,an active tunable terahertz bandwidth absorber based on single-layer graphene is proposed,which consists of a graphene layer,a photo crystal plate,and a gold *** the Fermi energy(Ef)of graphene is 1.5 eV,the absorber shows high absorption in the range of 3.7 THz–8 THz,and the total absorption rate is 96.8%.By exploring the absorption mechanism of the absorber,the absorber shows excellent physical *** absorber also shows good adjustability by changing the Efof *** means that the absorber exhibits excellent tunability by adjusting the physical parameters and Efof the ***,the absorber is polarization independent and insensitive to the incident *** fine characteristics of the absorber mean that the absorber has superior application value in many fields such as biotechnology and space exploration.

关键词： metamaterials active tunable bandwidth absorber terahertz graphene

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Investigating the PTF Fully-Isolated NTA Space-grade CMOS Image Sensor Pixels

Investigating the PTF Fully-Isolated NTA Space-grade CMOS Im...

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IEEE Information Technology and Mechatronics Engineering Conference (ITOEC)

作者： Kai Zhang Ting Li Weidong Xu Jie He Haisong Li Xi'an Institute of Microelectronics Technology Xi'an Key Laboratory of National Defense Science and Technology for Irradiation Resistant Integrated Circuits Xi'an

Space radiation can easily cause damage to the performance of CIS pixel devices, leading to varying degrees of failure in aerospace-grade microelectronic systems and a significant decline in image quality. This article proposes a PTF fully-isolated NTA radiation-hardening technology, which effectively suppresses the dark current generated by radiation-sensitive nodes by isolating the PPD photosensitive N-doped region, TG channel, FD-doped region, and STI edge. The results show that this technology can reduce the dark current growth rate to less than 72% following 50krad(Si) radiation exposure, down from 193%. The dark current growth per unit radiation dose is only 0.28pA•cm -2 •krad(Si) -1 , providing a solid theoretical basis and technical support for the development of advanced space-grade CMOS image sensors.

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Transient Analysis of Plasma Limiter Using the SETD method with a Multi-Physics Model

Transient Analysis of Plasma Limiter Using the SETD method w...

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2023 IEEE MTT-S International Wireless Symposium, IWS 2023

作者： Liu, Tong Dai, Zhou Qin, Haoran Zhang, Tiancheng Bao, Huaguang Zhou, Yinghui Sun, Zheng Ding, Dazhi School of Microelectronics Nanjing University of Science and Technology Nanjing210094 China Nanjing Electronic Devices Institute Nanjing210016 China Army Engineering University National Key Laboratory on Electromagnetic Environmental Effects and Electro-optical Engineering Nanjing210007 China

ISBN: (纸本)9798350336535

The plasma limiter can reflect and absorb the high-power microwave to protect the electronic systems. In this paper, a coupled multi-physics model based on the wave equation and electron hydrodynamic equation is proposed and the response properties of the plasma limiter under high power microwave radiation are analyzed using the spectral element time domain (SETD) method. The superiority of the transient fully coupled analysis under high power microwaves is demonstrated by comparison with COMSOL. © 2023 IEEE.

关键词： Transient analysis

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