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China Semiconductor Technology International Conference (CSTIC)

作者： Delong Yao Lisong Dong Yayi Wei EDA Center Institute of Microelectronics Chinese Academy of Sciences Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing China

ISBN: (数字)9798331513351

ISBN: (纸本)9798331513368

The shrinkage effect of negative tone development (NTD) process is a major factor influencing the accuracy of resist models. As a result, incorporating a resist model that accounts for this shrinkage is crucial for precise lithography simulations in NTD process. This paper presents a practical workflow of building a resist model considering shrinkage effect in NTD process. Simulation results demonstrate that the proposed model effectively captures this phenomenon, which provides a possibility for significantly improving the prediction accuracy of NTD simulations.

关键词： Resistance Accuracy Simulation Lithography Buildings Resists Predictive models Integrated circuit modeling Springs

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Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing

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Science China(Information Sciences) 2023年第12期66卷 261-266页

作者： Yang FENG Bing CHEN Mingfeng TANG Yueran QI Maoying BAI Chengcheng WANG Hai WANG Xuepeng ZHAN Junyu ZHANG Jing LIU Jixuan WU Jiezhi CHEN School of Information Science and Engineering Shandong University School of Micro-nano Electronics Zhejiang University Neumem Co. Ltd Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences

We propose a NOR flash-based computing-in-memory(CIM) to implement high-precision(32-bit) Poisson image editing, including the gradient operations and Laplace operation. To meet the requirements of image processing, CIM operation schemes and reliabilities are carefully studied and optimized,showing that the power consumption at the near-threshold-voltage(NTV) region can be as low as 40 fJ/bit,which is two orders lower than working at the saturation region. High-temperature retention, as well as various disturbs, are also analyzed. The proposed CIM scheme can be applied as an energy-efficient approach to construct the high-precision image processing accelerator.

关键词： NOR flash memory computing-in-memory variation Poisson image editing

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High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz

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Science China(Information Sciences) 2024年第06期67卷 459-460页

作者： Hanghai DU Lu HAO Zhihong LIU Zeyu SONG Yachao ZHANG Kui DANG Jin ZHOU Jing NING Zan LI Jincheng ZHANG Yue HAO State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University State Key Laboratory of Integrated Services Networks School of Communication EngineeringXidian University

GaN-based metal-insulator-semiconductor high-electronmobility-transistors (MISHEMTs) have many excellent performances compared with the Si and Ga As counterparts,and are prime candidates for applications in communicat... 详细信息

关键词： algan high with composition mishemt

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Analysis and Design of Bandpass Filters with Ultra-Wide Reflectionless Range in GaAs Technology

Analysis and Design of Bandpass Filters with Ultra-Wide Refl...

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Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSRWTC)

作者： Mengjie Qin Zhongmao Li Huize Qiao Zhiqiang Li State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing China Institute of Microelectronics of the Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798331507794

ISBN: (纸本)9798331507800

In this work, two reflectionless bandpass filters based on lumped elements were designed and fabricated using 0.25um GaAs technology, which realizing 60GHz ultra-wide reflectionless frequency range. Filter A consists a third-order reflectionless low-pass filter and a third-order reflectionless high-pass filter. Measured results show the bandpass filter demonstrates an insertion loss below 3.5 dB within the 24~34 GHz frequency range and a return loss exceeding 13.8 dB over the 0~60 GHz frequency band. Meanwhile, the dimensions of the fabricated filter circuit are just 420 μm * 688 μm. Filter B is built upon Filter A by increasing the order of the low-pass structure, thereby optimizing frequency selectivity. The design results demonstrate the excellent performance of the on-chip reflectionless filter achieved in the high-frequency band.

关键词： Band-pass filters Wireless communication Simulation Gallium arsenide Low-pass filters Insertion loss Loss measurement Frequency measurement System-on-chip Passband

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Ingeniously designed Ni-Mo-S/ZnIn_(2)S_(4) composite for multi-photocatalytic reaction systems

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Chinese Chemical Letters 2022年第3期33卷 1468-1474页

作者： Jing Chen Yumei Tang Shihao Wang Lingbin Xie Cheng Chang Xiaolei Cheng Mingming Liu Longlu Wang Lianhui Wang College of Electronic and Optical Engineering&College of Microelectronics Jiangsu Province Engineering Research Center for Fabrication and Application of Special Optical Fiber Materials and DevicesNanjing University of Posts and TelecommunicationsNanjing 210023China State Key Laboratory of Organic Electronics and Information Displays&Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials(IAM)&Institute of Flexible Electronics(Future Technology)Nanjing University of Posts and TelecommunicationsNanjing 210023China

Molybdenum disulfide (MoS_(2)) with low cost, high activity and high earth abundance has been found to be a promising catalyst for the hydrogen evolution reaction (HER), but its catalytic activity is considerably limited due to its inert basal planes. Here, through the combination of theory and experiment, we propose that doping Ni in MoS_(2) as catalyst can make it have excellent catalytic activity in different reaction systems. In the EY/TEOA system, the maximum hydrogen production rate of EY/Ni-Mo-S is 2.72 times higher than that of pure EY, which confirms the strong hydrogen evolution activity of Ni-Mo-S nanosheets as catalysts. In the lactic acid and Na_(2)S/Na_(2)SO_(3) systems, when Ni-Mo-S is used as co-catalyst to compound with ZnIn_(2)S_(4) (termed as Ni-Mo-S/ZnIn_(2)S_(4)), the maximum hydrogen evolution rates in the two systems are 5.28 and 2.33 times higher than those of pure ZnIn_(2)S_(4), respectively. The difference in HER enhancement is because different systems lead to different sources of protons, thus affecting hydrogen evolution activity. Theoretically, we further demonstrate that the Ni-Mo-S nanosheets have a narrower band gap than MoS_(2), which is conducive to the rapid transfer of charge carriers and thus result in multi-photocatalytic reaction systems with excellent activity. The proposed atomic doping strategy provides a simple and promising approach for the design of photocatalysts with high activity and stability in multi-reaction systems.

关键词： Molybdenum disulfide(MoS_(2)) Ni-Mo-S nanosheets Multi-reaction systems Hydrogen evolution reaction(HER) Atomic doping strategy

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Comparsion of SiC Planar and Trench Junction Barrier Schottky Diode with Surge Current Capability

Comparsion of SiC Planar and Trench Junction Barrier Schottk...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Zi-Ming Zhao Yan-Cong Liu Hao Yuan Feng-Yu Du Yu Zhou Ke-Yu Liu Xiao-Yan Tang Chao Han Qing-Wen Song Yu-Ming Zhang Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an China The Xidian-Wuhu Research Institute wuhu China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

The surge capabilities of SiC planar junction barrier schottky diodes and trench junction barrier schottky diodes are analyzed and compared by experiment and simulation in this paper. Though experimental comparison, the maximum surge current of SiC trench JBS is larger than SiC planar JBS, improved by 8.5%. The leakage current of the trench structure is approximately one order of magnitude lower than that of the planar structure at voltages below 1300 V, sacrificing only a small forward voltage drop. Thanks to the deep P+ region design, the p-n junction turn-on voltage in SiC trench JBS diodes is substantially decreased, and the results of both the experiment and simulation studies demonstrate that the trench structure exhibits superior surge capability.

关键词： Integrated circuit technology Schottky diodes Silicon carbide Leakage currents Surges P-n junctions

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Two-Dimensional Thermal-Induced Warpage Prediction for Multi-Chiplet Heterogeneous Integration System in Advanced Packaging

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IEEE Transactions on Components, Packaging and Manufacturing Technology 2025年

作者： Cao, He Xu, Qinzhi Liu, Jianyun Li, Zhiqiang Wang, Chenghan Ma, Xiaoning An, Kunlong Zhang, Daoqing Sun, Tunan State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China EDA Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China Beijing Key Laboratory of Three Dimensional and Nanometer Circuit Design Automation Technology Beijing100029 China

Thermal-induced warpage is a bottleneck problem in advanced packaging technology. In this paper, a new way of predicting the warpage deformation is proposed for multi-chiplet heterogeneous integration system, where the system deformations are considered as the combined actions of several asymmetric trimaterial assemblies based on the superposition principle. Firstly, an analytical model for an asymmetric tri-material assembly is derived by the beam theory. The rotation and rigid translation behaviors are investigated for the asymmetrical structures, which are determined by both the geometrical structures and the material properties. Secondly, the finite element method (FEM) is adopted to validate the analytical model and obtain the sample data. Then, the unknown parameters in the analytical model are extracted by the random forest algorithm (RF). Finally, a data-driven scale factor is introduced to modify the analytical model and improve its accuracy. The superposition warpage deformation of a heterogeneous integration system with 14 chiplets predicted by the present analytical model shows a good agreement with the FEM results with high efficiency. Therefore, the new thermal-induced warpage prediction method has a good potential of executing warpage analysis and package design of the multi-chiplet heterogeneous integration system in advanced packaging. © 2011-2012 IEEE.

关键词： Analytical models

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Semimetallization induced Hall anomaly in doped polymers

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Physical Review Research 2024年第4期6卷 043180-043180页

作者： Zean Guo Jiawei Wang Mengmeng Li Yawei Lv Nianduan Lu Chong Bi Yeliang Wang Ling Li Ming Liu State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Key Laboratory for Micro-/Nano-Optoelectronic Devices of the Ministry of Education School of Physics and Electronics Hunan University Changsha 410082 China School of Information and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices Beijing Institute of Technology Beijing 100081 China

Hall anomaly related to deviations in Hall carrier concentrations have always been recognized as signs of charge incoherence in organic semiconductors, which lack ordered lattices. In this paper, we show that the Hall carrier concentration anomaly in doped polymers might be a result of semimetallization. Based on the observation of semimetal-like states, a dual-channel model, in which electrons and holes compensate the Hall voltages of each other, is employed to account for the anomaly. Observations of possible nonlinear Hall effect and temperature dependent Hall signs further support the origin of Hall anomaly from semimetal states.

关键词： Anomalous Hall effect Hall effect Conducting polymers Density functional theory Electron spin resonance X-ray photoelectron spectroscopy

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Influence Of B Ions Doping on the Performance of P-Type Silicon Nanowire Field Effect Transistor Biosensor

Influence Of B Ions Doping on the Performance of P-Type Sili...

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2022 China Semiconductor Technology International Conference, CSTIC 2022

作者： Hu, Jiawei Zhang, Qingzhu Wei, Shuhua Zhang, Jing Zhang, Zhaohao Liu, Jin Biao Yan, Jiang School of Information Science and Technology North China University of Technology Beijing100144 China Key Laboratory of Microelectronic Devices and Integration Technology Chinese Academy of Sciences Institute of Microelectronics Beijing100029 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, the influence of different doping concentrations on the performance of p-type polycrystalline silicon nanowire (SiNW) field effect transistor biosensors was investigated. Silicon nanowire biosensors with different doping concentrations were botained by implanting B ions with various concentrations of 0, 1E13, 5E13, and 1E14 into the poly-silicon film. With the increase of the doping concentrations of B ions, the threshold voltage (Vth) of the SiNW biosensor moves to the positive direction. In addition, the switching ratios (Ion/Ioff) and the subthreshold swing (SS) is also significantly improved, the biosensor working in the subthreshold region has the best sensing sensitivity. © 2022 IEEE.

关键词： Field effect transistors

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Design, fabrication, and characterization of high-Q SION waveguide ring resonators

Design, fabrication, and characterization of high-Q SION wav...

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2023 Applied Optics and Photonics China: AI in Optics and Photonics, AOPC 2023

作者： Zhang, Shun Wang, Anxin Wang, Shuxiao Chen, Xu Wang, Wei Cai, Yan School of Microelectronics Shanghai University Chengzhong Road 20 Shanghai201800 China Shanghai Industrial Technology Research Institute Chengbei Road 235 Shanghai201800 China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai200050 China

ISBN: (纸本)9781510672383

High-quality factor(Q) waveguide ring resonators (WRRs) are essential components of the resonator-integrated optical gyroscope (RIOG). The single-mode and multimode silicon oxynitride (SION) WRRs are investigated in this paper. The optical, resonance, and polarization properties are characterized. The intrinsic Q of single-mode WRR is 8.25×105. And the multimode WRR achieves an intrinsic Q of 1.02×106, corresponding to the waveguide propagation loss of 0.3 dB/cm. The designed multimode SION WRRs can be used as a critical sensing element to enhance RIOG performance further. keywords: High Q ring resonators, Multi-mode SION waveguide, Integrated optics. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Integrated optics

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