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2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity

Science China(Information Sciences) 2023年第6期66卷 309-310页

作者： Ren HUANG Weihang ZHANG Jincheng ZHANG Chunxu SU Xi LIU Liyu FU Yue HAO Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University Wide Bandgap Semiconductor Innovation Center of Guangzhou Guangzhou Institute of TechnologyXidian University

The GaN on Si technology is attractive for power electronic systems owing to its low cost and large wafer size [1]. GaN Schottky barrier diodes(SBDs) on Si substrates have been extensively studied due to their superio...

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A Semi-Empirical Approach for Predicting LER Statistical Distribution in Advanced Nodes

A Semi-Empirical Approach for Predicting LER Statistical Dis...

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International Conference on Extreme Ultraviolet Lithography 2024

作者： Hong, Xin Su, Xiaojing Liu, Zixi Ling, Xiaohuan Wang, Yuqin Ren, Pengyu Jiang, Yujie Su, Yajuan Wei, Yayi Institute of Microelectronics CAS Beijing China University of CAS Beijing China Key Laboratory of Fabrication Technologies for Integrated Circuits CAS Beijing100029 China

ISBN: (数字)9781510681569

ISBN: (纸本)9781510681552

Given that the energy of photons in Extreme Ultraviolet (EUV) is significantly higher than in Deep Ultraviolet (DUV), EUV photoresists undergo exposure via photo-ionization. In this process, high-energy photons are absorbed by the photoresist, which ionizes the polymer and subsequently generates photoelectrons. These photoelectrons produce more secondary electrons through scattering. Furthermore, compared to DUV, the number of incident photons in EUV is fewer for the same exposure dose, leading to more significant stochastic effects, such as Line Edge Roughness (LER). Therefore, modeling these stochastic effects in EUV is a noteworthy issue. Due to the complexity of the secondary electron scattering, it is extremely challenging to establish a strict EUV stochastic model from first principles. The current approach to simulating the stochastic behavior in EUV photoresist is primarily conducted through Monte Carlo dynamics-based stochastic methods, which have been proven to be an accurate method. However, these approaches necessitate conducting repeated simulations to obtain the statistical distribution of LER, which can be time-consuming. Using a semi-empirical approach to equivalently process secondary electron scattering is a worthwhile method. In this paper, we employ the Gaussian function to equivalently process the energy distribution after the scattering of secondary electrons. Subsequently, based on the PEB model that incorporates physical mechanisms, the statistical distribution of LER is derived through the transmission of variance. The model is calibrated using the statistical results of the Monte Carlo dynamics-based stochastic methods. The result shows that this approach can quickly predict the statistical distribution of LER in EUV with high accuracy. © 2024 SPIE.

关键词： Photons

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A review of automatic detection of epilepsy based on EEG signals

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Journal of Semiconductors 2023年第12期44卷 8-30页

作者： Qirui Ren Xiaofan Sun Xiangqu Fu Shuaidi Zhang Yiyang Yuan Hao Wu Xiaoran Li Xinghua Wang Feng Zhang Laboratory of Microelectronic Devices&Integrated Technology Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 101408China School of Information and Electronics Beijing Institute of TechnologyBeijing 100081China

Epilepsy is a common neurological disorder that occurs at all *** not only brings physical pain to patients,but also brings a huge burden to the lives of patients and their *** present,epilepsy detection is still achieved through the observation of electroencephalography(EEG)by medical ***,this process takes a long time and consumes energy,which will create a huge workload to medical ***,it is particularly important to realize the automatic detection of *** paper introduces,in detail,the overall framework of EEG-based automatic epilepsy identification and the typical methods involved in each *** at the core modules,that is,signal acquisition analog front end(AFE),feature extraction and classifier selection,method summary and theoretical explanation are carried ***,the future research directions in the field of automatic detection of epilepsy are prospected.

关键词： epilepsy electroencephalography automatic detection analog front end feature extraction classifier

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Spin transport characteristics modulated by the GeBi interlayer in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures

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Chinese Physics B 2024年第2期33卷 471-475页

作者：李明明张磊金立川郭海中 Key Laboratory of Materials Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China State Key Laboratory of Electronic Thin Films&Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Institute of Quantum Materials and Physics Henan Academy of SciencesZhengzhou 450046China

For the past few years,germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor *** main challenges in the development of modern semiconductor spintronics are the generation,detection,and manipulation of spin ***,the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures were investigated *** effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were *** spin-injection efficiency in the Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures is comparable to that of the Y_(3)Fe_(5)O_(12)/Pt bilayer,and the inverse spin Hall voltage exponential decays with the increase in the barrier ***,the band gap of the GeBi layer was tuned by changing the Bi *** spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi *** results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials.

关键词： spin current Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures spin pumping inverse spin Hall effect

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Recent developments in nonferrous metals and related materials for biomedical applications in China:a review

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Rare Metals 2022年第5期41卷 1410-1433页

作者： Hai-Ling Tu Hong-Bin Zhao Yan-Yan Fan Qing-Zhu Zhang State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co.Ltd.Beijing 100088China China Academy of Space Technology Beijing 100094China Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsCASBeijing 100029China

Biomedical materials have received increasing attention in recent decades and have been used in medical applications to advance patient care,such as prosthetic implants,tissue repair and regeneration,drug delivery systems,pharmaceutical or biological therapy products,and sensitive diagnostic *** different types of biomedical materials,nonferrous metals and related materials(NMRMs)are important and attractive *** updating of biomedical NMRMs and devices heavily relies on original research and applicationoriented ***,we provide recent research findings and succinct insights into the developments in NMRMs for biomedical applications in China,including the use of titanium,magnesium,copper,zinc,cobalt,zirconium,hafnium,niobium,rhenium,tantalum,tungsten,silver,gold,platinum,palladium,their alloys and compounds,rare earths,high-entropy alloys,and liquid ***,the literature review concludes with several possible directions of NMRMs for new and future developments in biomedical engineering.

关键词： Nonferrous metal Biomedical Implants In vitro and in vivo Imaging Cancer treatment

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Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf_(0.5)Zr_(0.5)O_(2)

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Rare Metals 2024年第7期43卷 3242-3249页

作者： Zhao-Hao Zhang Yan-Na Luo Gao-Bo Xu Jia-Xin Yao Zhen-Hua Wu Hong-Bin Zhao Qing-Zhu Zhang Hua-Xiang Yin Jun Luo Wen-Wu Wang Hai-Ling Tu Integrated Circuit Advanced R&D Center Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing 100088China

In this work,a conventional HfO_(2) gate dielectric layer is replaced with a 3-nm ferroelectric(Fe) HZO layer in the gate stacks of advanced fin field-effect transistors(FinFETs).Fe-induced characteristics,e.g.,negative drain induced barrier lowering(N-DIBL) and negative differential resistance(NDR),are clearly observed for both p-and n-type HZO-based *** characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide(HZO) film,caused by Al doping from the TiAlC capping *** mechanism is verified for capacitors with structures similar to the *** to the enhanced ferroelectricity and N-DIBL phenomenon,the drain current(I_(DS))of the HZO-FinFETs is greater than that of HfO_(2)-FinFETs and obtained at a lower operating ***,circuits based on HZO-FinFET achieve higher performance than those based on HfO_(2)-FinFET at a low voltage drain(V_(DD)),which indicates the application feasibility of the HZO-FinFETs in the ultralow power integrated circuits.

关键词： FinFET Ferroelectric Hafnium zirconium oxide Subthreshold swing Low power

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Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

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Chinese Physics B 2023年第7期32卷 443-447页

作者：钟傲雪王磊唐蕴杨永涛王进进朱慧平吴真平唐为华李博 State Key Laboratory of Information Photonics and Optical Communications&School of Science Beijing University of Posts and TelecommunicationsBeijing 100876China Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesUniversity of Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China

The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this *** electrical properties of both P-GaN and N-GaN,separated from power devices,were gauged for fundamental *** was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation,as indicated by the Hall and circular transmission line ***,under a 100-Mrad(Si)x-ray dose,the specific contact resistance pc of P-GaN decreased by 30%,and the hole carrier concentration increased ***,the atom displacement damage effect of a 2-MeV proton of 1×10^(13)p/cm^(2)led to a significant degradation of the electrical properties of P-GaN,while those of N-GaN remained unchanged.P-GaN was found to be more sensitive to irradiation than N-GaN thin *** effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.

关键词： x-ray radiation proton radiation GaN circular transmission line model(CTLM)

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Study of selective isotropic etching effects of Si1-xGexin gate-all-around nanosheet transistor process 12

Study of selective isotropic etching effects of Si1-xGexin g...

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Advanced Etch Technology and Process Integration for Nanopatterning XII 2023

作者： Yan, Qi Shao, Hua Li, Junjie Kong, Zhenzhen He, Xiaobin Li, Junfeng Yang, Tao Chen, Rui Wei, Yayi Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

ISBN: (纸本)9781510661059

Gate-all-around (GAA) nanosheet transistors are widely accepted for the mainstream technology towards 3nm technology node. The major strategy is to form nanosheet by using Si1-xGex/Si multilayer structures (MLS). Inner spacer formation is a critical step as it defines the gate length and isolates gate from source and drain. Selectively removing of SiGe layers determines the dimension of the inner spacer and impacts the transistor performance significantly. It requires precise process control in the lateral cavity etching and brings significant challenges to conventional etching manners. In our previous work, we achieved isotropic Si0.7Ge0.3 selective etching in SiGe/Si stack with high selectivity. However, the results were achieved on the single SiGe/Si stack in a relatively open area, when moving to dense patterns, the etching performance desires for further study. In this paper, we present our latest progress on isotropic etching by using ICP with mixed gas of CF4/O2/He on SiGe/Si stack periodic arrays. Loading effect and Si surface damage were observed. We reproduce these etching effects by developing an analytical model. This model is based on Monte-Carlo method and is capable of simulating the profile evolution of the lateral etching of SiGe/Si structures. The influence of etch time, pattern pitch and stack layer thickness on lateral etch results have been studied by simulation. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Nanosheets

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SiC trench MOSFET with dual shield gate and optimized JFET layer for improved dynamic performance and safe operating area capability

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Chinese Physics B 2023年第11期32卷 627-634页

作者：张金平陈伟陈子珣张波 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of ChinaChongqing 401331China

A novel silicon carbide(SiC) trench metal–oxide–semiconductor field-effect transistor(MOSFET) with a dual shield gate(DSG) and optimized junction field-effect transistor(JFET) layer(ODSG-TMOS) is proposed. The combination of the DSG and optimized JFET layer not only significantly improves the device’s dynamic performance but also greatly enhances the safe operating area(SOA). Numerical analysis is carried out with Silvaco TCAD to study the performance of the proposed structure. Simulation results show that comparing with the conventional asymmetric trench MOSFET(Con-ATMOS), the specific on-resistance(Ron,sp) is significantly reduced at almost the same avalanche breakdown voltage(BVav). Moreover, the DSG structure brings about much smaller reverse transfer capacitance(Crss) and input capacitance(Ciss), which helps to reduce the gate–drain charge(Qgd) and gate charge(Qg). Therefore, the high frequency figure of merit(HFFOM) of Ron,sp·Qgdand Ron,sp· Qgfor the proposed ODSG-TMOS are improved by 83.5% and 76.4%, *** switching power loss of the proposed ODSG-TMOS is 77.0% lower than that of the Con-ATMOS. In addition, the SOA of the proposed device is also enhanced. The saturation drain current(Id,sat) at a gate voltage(Vgs) of 15 V for the ODSGTMOS is reduced by 17.2% owing to the JFET effect provided by the lower shield gate(SG) at a large drain voltage. With the reduced Id,sat, the short-circuit withstand time is improved by 87.5% compared with the Con-ATMOS. The large-current turn-off capability is also improved, which is important for the widely used inductive load applications.

关键词： SiC trench MOSFET switching power loss figure of merit safe operating area

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Modeling of SiNxgrowth by chemical vapor deposition in nanosheet indentation 12

Modeling of SiNxgrowth by chemical vapor deposition in nanos...

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Advanced Etch Technology and Process Integration for Nanopatterning XII 2023

作者： Shao, Hua Lai, Panpan Li, Junjie Bai, Guobin Yan, Qi Li, Junfeng Yang, Tao Chen, Rui Wei, Yayi Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

ISBN: (纸本)9781510661059

Gate-all-around nanosheet (GAA-NS) transistors are commonly considered to be most competitive logic device in the future. In the GAA nanosheet transistor device fabrication process, the inner spacer formation is a critical step as it physically isolates the gate from the source/drain, and defines the gate length. After the selective lateral etch of the SiGe in alternative Si/SiGe stack, inner spacer material is deposited and SiNx is commonly used. This gap filling process demands for highly uniform growth of materials in order to minimize transistor variability. As moving to three-dimensional stacked structure, lateral open features bring challenges to conventional deposition manners such as chemical vapor deposition (CVD). In our previous work, we have compared the filling performance between low-pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD), and demonstrated good SiNx growth conformity by LPCVD in Si/SiGe indentation cavities. The cavity geometry was also found to pose significant impact on growth profile. However these works were carried out on isolated Si/SiGe nanosheet structure without neighboring unit. CVD process performance may degrade when moving from isolated to dense structures, especially when the critical dimension goes into tens of nanometers. In this paper, we present our latest simulation progress on the profile evolution of SiNx CVD in dense Si/SiGe nanosheet structures with varying geometry and density of units. The SiNx profile simulation indicates that LPCVD still maintains promising coverage performance in cavities, the SiNx film thickness in the inner and outer side of unit are pretty close, while necking signature emerges near the unit top as process time increases. In contrast, PECVD exhibits pin holes within the cavity at the beginning of process, and the necking effect is relatively severe both in the cavity and near top of unit. We conduct systematic study on periodic stack structure arra

关键词： Silicon nitride

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