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Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf_(0.5)Zr_(0.5)O_(2)

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Rare Metals 2024年第7期43卷 3242-3249页

作者： Zhao-Hao Zhang Yan-Na Luo Gao-Bo Xu Jia-Xin Yao Zhen-Hua Wu Hong-Bin Zhao Qing-Zhu Zhang Hua-Xiang Yin Jun Luo Wen-Wu Wang Hai-Ling Tu Integrated Circuit Advanced R&D Center Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing 100088China

In this work,a conventional HfO_(2) gate dielectric layer is replaced with a 3-nm ferroelectric(Fe) HZO layer in the gate stacks of advanced fin field-effect transistors(FinFETs).Fe-induced characteristics,e.g.,negative drain induced barrier lowering(N-DIBL) and negative differential resistance(NDR),are clearly observed for both p-and n-type HZO-based *** characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide(HZO) film,caused by Al doping from the TiAlC capping *** mechanism is verified for capacitors with structures similar to the *** to the enhanced ferroelectricity and N-DIBL phenomenon,the drain current(I_(DS))of the HZO-FinFETs is greater than that of HfO_(2)-FinFETs and obtained at a lower operating ***,circuits based on HZO-FinFET achieve higher performance than those based on HfO_(2)-FinFET at a low voltage drain(V_(DD)),which indicates the application feasibility of the HZO-FinFETs in the ultralow power integrated circuits.

关键词： FinFET Ferroelectric Hafnium zirconium oxide Subthreshold swing Low power

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Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

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Chinese Physics B 2023年第7期32卷 443-447页

作者：钟傲雪王磊唐蕴杨永涛王进进朱慧平吴真平唐为华李博 State Key Laboratory of Information Photonics and Optical Communications&School of Science Beijing University of Posts and TelecommunicationsBeijing 100876China Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesUniversity of Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China

The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this *** electrical properties of both P-GaN and N-GaN,separated from power devices,were gauged for fundamental *** was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation,as indicated by the Hall and circular transmission line ***,under a 100-Mrad(Si)x-ray dose,the specific contact resistance pc of P-GaN decreased by 30%,and the hole carrier concentration increased ***,the atom displacement damage effect of a 2-MeV proton of 1×10^(13)p/cm^(2)led to a significant degradation of the electrical properties of P-GaN,while those of N-GaN remained unchanged.P-GaN was found to be more sensitive to irradiation than N-GaN thin *** effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.

关键词： x-ray radiation proton radiation GaN circular transmission line model(CTLM)

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SiC trench MOSFET with dual shield gate and optimized JFET layer for improved dynamic performance and safe operating area capability

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Chinese Physics B 2023年第11期32卷 627-634页

作者：张金平陈伟陈子珣张波 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of ChinaChongqing 401331China

A novel silicon carbide(SiC) trench metal–oxide–semiconductor field-effect transistor(MOSFET) with a dual shield gate(DSG) and optimized junction field-effect transistor(JFET) layer(ODSG-TMOS) is proposed. The combination of the DSG and optimized JFET layer not only significantly improves the device’s dynamic performance but also greatly enhances the safe operating area(SOA). Numerical analysis is carried out with Silvaco TCAD to study the performance of the proposed structure. Simulation results show that comparing with the conventional asymmetric trench MOSFET(Con-ATMOS), the specific on-resistance(Ron,sp) is significantly reduced at almost the same avalanche breakdown voltage(BVav). Moreover, the DSG structure brings about much smaller reverse transfer capacitance(Crss) and input capacitance(Ciss), which helps to reduce the gate–drain charge(Qgd) and gate charge(Qg). Therefore, the high frequency figure of merit(HFFOM) of Ron,sp·Qgdand Ron,sp· Qgfor the proposed ODSG-TMOS are improved by 83.5% and 76.4%, *** switching power loss of the proposed ODSG-TMOS is 77.0% lower than that of the Con-ATMOS. In addition, the SOA of the proposed device is also enhanced. The saturation drain current(Id,sat) at a gate voltage(Vgs) of 15 V for the ODSGTMOS is reduced by 17.2% owing to the JFET effect provided by the lower shield gate(SG) at a large drain voltage. With the reduced Id,sat, the short-circuit withstand time is improved by 87.5% compared with the Con-ATMOS. The large-current turn-off capability is also improved, which is important for the widely used inductive load applications.

关键词： SiC trench MOSFET switching power loss figure of merit safe operating area

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Modeling of SiNxgrowth by chemical vapor deposition in nanosheet indentation 12

Modeling of SiNxgrowth by chemical vapor deposition in nanos...

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Advanced Etch Technology and Process Integration for Nanopatterning XII 2023

作者： Shao, Hua Lai, Panpan Li, Junjie Bai, Guobin Yan, Qi Li, Junfeng Yang, Tao Chen, Rui Wei, Yayi Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

ISBN: (纸本)9781510661059

Gate-all-around nanosheet (GAA-NS) transistors are commonly considered to be most competitive logic device in the future. In the GAA nanosheet transistor device fabrication process, the inner spacer formation is a critical step as it physically isolates the gate from the source/drain, and defines the gate length. After the selective lateral etch of the SiGe in alternative Si/SiGe stack, inner spacer material is deposited and SiNx is commonly used. This gap filling process demands for highly uniform growth of materials in order to minimize transistor variability. As moving to three-dimensional stacked structure, lateral open features bring challenges to conventional deposition manners such as chemical vapor deposition (CVD). In our previous work, we have compared the filling performance between low-pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD), and demonstrated good SiNx growth conformity by LPCVD in Si/SiGe indentation cavities. The cavity geometry was also found to pose significant impact on growth profile. However these works were carried out on isolated Si/SiGe nanosheet structure without neighboring unit. CVD process performance may degrade when moving from isolated to dense structures, especially when the critical dimension goes into tens of nanometers. In this paper, we present our latest simulation progress on the profile evolution of SiNx CVD in dense Si/SiGe nanosheet structures with varying geometry and density of units. The SiNx profile simulation indicates that LPCVD still maintains promising coverage performance in cavities, the SiNx film thickness in the inner and outer side of unit are pretty close, while necking signature emerges near the unit top as process time increases. In contrast, PECVD exhibits pin holes within the cavity at the beginning of process, and the necking effect is relatively severe both in the cavity and near top of unit. We conduct systematic study on periodic stack structure arra

关键词： Silicon nitride

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Cell Structure and Process Integration of a Novel 2T0C Technology for High-Density Dram Application

Cell Structure and Process Integration of a Novel 2T0C Techn...

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2023 China Semiconductor Technology International Conference, CSTIC 2023

作者： Zhu, Zheng-Yong Kang, Bok-Moon Zhang, Jing Duan, Xin-Lv Xiang, Jin-Juan Yang, Guan-Hua Geng, Di Dan, Wang Wu, Xie-Shuai Liu, Ming-Xu Wang, Gui-Lei Zhao, Chao Beijing Superstring Academy of Memory Technology Beijing100176 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9798350311006

A new DRAM 2T0C cell is introduced to resolve those special issues for traditional 2T0C DRAM. In this technology, the read transistor holds dual gates. The data is stored in one gate of read transistor, and the other gate is used to control read operation. By writing different-level voltages into storage gate, the read transistor will have different threshold voltages by using the other gate as control gate. Compared with 1T1C DRAM, read operation in this new technology is non-destructive and therefore no explicit capacitor is required. Low leakage is essential for write transistor to obtain long data retention time. A few cell structures of this new 2T0C technology are discussed for high-density DRAM application, and challenges of process integration is also analyzed. © 2023 IEEE.

关键词： Dynamic random access storage

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Evolution of optical properties and molecular structure of PCBM films under proton irradiation

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Chinese Physics B 2022年第5期31卷 582-587页

作者： Guo-Dong Xiong Hui-Ping Zhu Lei Wang Bo Li Fa-Zhan Zhao Zheng-Sheng Han Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of the Chinese Academy of Sciences Beijing 100049China

Low-energy proton irradiation effects on the optical properties and the molecular structure of phenyl-C_(61)-butyric acid methyl ester(PCBM)are studied in this *** PCBM films are irradiated by 100-keV proton beams with fluences of 5×10^(12)p/cm^(2),5×10^(13)p/cm^(2),and 5×10^(14)p/cm^(2),*** photoluminescence(PL)peaks of the post-irradiated PCBM films show a progressive decrease in the peak intensity as the proton fluences increase,which can be attributed to the deep defect levels induced by proton ***,a slight blue-shift in the PL spectrum is also observed at a proton fluence of 5×10^(14)p/cm^(2).The underlying mechanism can be traced back to the lift of the lowest unoccupied molecular orbital(LUMO)level,which is caused by the attachment of methoxy radicals on ortho position of the phenyl ring in the post-irradiated PCBM *** work is of significance in understanding the radiation hardness and the damage mechanism of the PCBM film in radiation environments,which is essential before it is put into practical application in space.

关键词： PCBM proton irradiation effects optical property molecular structure

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Carrier dynamic identification enables wavelength and intensity sensitivity in perovskite photodetectors

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Light(Science & Applications) 2024年第11期13卷 2824-2834页

作者： Liangliang Min Yicheng Zhou Haoxuan Sun Linqi Guo Meng Wang Fengren Cao Wei Tian Liang Li School of Physical Science and Technology Jiangsu Key Laboratory of Frontier Material Physics and DevicesCenter for Energy Conversion Materials&Physics(CECMP)Soochow UniversitySuzhouChina College of Physical Science and Technology&Microelectronics Industry Research Institute Yangzhou UniversityYangzhouChina

Deciphering the composite information within a light field through a single photodetector,without optical and mechanical structures,is *** difficulty lies in extracting multi-dimensional optical information from a single dimension of *** photodetectors based on information reconstruction have potential,yet they only extract information contained in the photoresponse current amplitude(responsivity matrix),neglecting the hidden information in response edges driven by carrier ***,by adjusting the thickness of the absorption layer and the interface electric field strength in the perovskite photodiode,we extend the transport and relaxation time of carriers excited by photons of different wavelengths,maximizing the spectrum richness of the edge waveform in the light-dark transition *** the first time,without the need for extra optical and electrical components,the reconstruction of two-dimensional information of light intensity and wavelength has been *** the integration of machine learning algorithms into waveform data analysis,a wide operation spectrum range of 350–750 nm is available with a 100%accuracy *** restoration error has been lowered to less than 0.1%for light *** work offers valuable insights for advancing perovskite applications in areas such as wavelength identification and spectrum imaging.

关键词： intensity spectrum enable

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Study of selective isotropic etching effects of Si1-xGexin gate-all-around nanosheet transistor process 12

Study of selective isotropic etching effects of Si1-xGexin g...

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Advanced Etch Technology and Process Integration for Nanopatterning XII 2023

作者： Yan, Qi Shao, Hua Li, Junjie Kong, Zhenzhen He, Xiaobin Li, Junfeng Yang, Tao Chen, Rui Wei, Yayi Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

ISBN: (纸本)9781510661059

Gate-all-around (GAA) nanosheet transistors are widely accepted for the mainstream technology towards 3nm technology node. The major strategy is to form nanosheet by using Si1-xGex/Si multilayer structures (MLS). Inner spacer formation is a critical step as it defines the gate length and isolates gate from source and drain. Selectively removing of SiGe layers determines the dimension of the inner spacer and impacts the transistor performance significantly. It requires precise process control in the lateral cavity etching and brings significant challenges to conventional etching manners. In our previous work, we achieved isotropic Si0.7Ge0.3 selective etching in SiGe/Si stack with high selectivity. However, the results were achieved on the single SiGe/Si stack in a relatively open area, when moving to dense patterns, the etching performance desires for further study. In this paper, we present our latest progress on isotropic etching by using ICP with mixed gas of CF4/O2/He on SiGe/Si stack periodic arrays. Loading effect and Si surface damage were observed. We reproduce these etching effects by developing an analytical model. This model is based on Monte-Carlo method and is capable of simulating the profile evolution of the lateral etching of SiGe/Si structures. The influence of etch time, pattern pitch and stack layer thickness on lateral etch results have been studied by simulation. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Nanosheets

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A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness

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IEEE Transactions on Device and Materials Reliability 2025年第2期25卷 274-280页

作者： Wang, Tongyang Li, Zehong Zhao, Yishang Xia, Ziming Zheng, Yige Ye, Jun Xiao, Xuan University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China UESTC Chongqing Institute of Microelect ronics Industry Technology China China Resources Microelectronics Limited Chongqing China

A novel dual-mode dual trench MOSFET (DDT-MOSFET) featuring shorted P-doping field plate (PFP) and N-doping field plate (NFP) is proposed. A parasitic depletion region capacitor and a parasitic MOSFET are introduced in the self-adjustable field plate (SFP). During turn-on, the DDT-MOSFET is in the split gate trench (SGT) mode with an electron inversion layer in the PFP, achieving low Cgd. During turn-off, the DDT-MOSFET is in the insulator pillar superjunction (I-SJ) mode with depleted PFP, achieving low electromagnetic interference (EMI) noise and high breakdown voltage (BV). Mode conversion is realized by the introduction of the SFP. By TCAD simulation, during turn-off, the proposed structure exhibits 33.9% improvement in BV, 42.8% reduction in maximum dID/dt and 44.1% reduction in overshoot voltage (VO) with same Eoff, reducing EMI noise and improving dynamic avalanche robustness without deterioration of other electrical characteristics. © 2001-2011 IEEE.

关键词： MOSFET devices

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Experimental Demonstration of A CT-FeFET Array with Intrinsic Long-Short-Term Plasticity for Low-Cost Trajectory Prediction

Experimental Demonstration of A CT-FeFET Array with Intrinsi...

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2024 IEEE International Electron devices Meeting, IEDM 2024

作者： Li, Chao Yu, Jie Zhang, Xumeng Zhang, Zhaohao Zhu, Fangduo Ouyang, Siyuan Chen, Pei Cheng, Lingli Xu, Gaobo Zhang, Qingzhu Yin, Huaxiang Liu, Qi Liu, Ming State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200438 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9798350365429

Trajectory prediction is a vital function in the auto-driving field, typically achieved with a long short-term memory network. Static IMC technology accelerates the computing of long-term parameters, while the execution of short-term parameters faces great buffer overhead. Inspired by the fused long-short-term synaptic plasticity in biology, here, we proposed a dynamic IMC strategy based on a charge-trapping FeFET array with intrinsic long-short-term plasticity. The long-term weights are stored in the ferroelectric domain, while the short-term weights are in-situ dynamically operated in a charge-trapping domain, eliminating the external caching process. We further demonstrated a dynamic IMC neuromorphic system built on this array for performing trajectory prediction of moving vehicles, achieving more than 1000× and 4× improvements than GPU in power consumption and memory overhead. © 2024 IEEE.

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