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2023 International Symposium of Electronics Design Automation, ISEDA 2023

作者： Cheng, Lin Lu, Hongliang Guo, Xiuxiu Yan, Silu Cheng, Wei Zhang, Yuming School of Microelectronics Xidian University Xi'an710071 China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9798350304510

In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neural network architecture was used to simulate the fresh S-parameters of InP heterojunction bipolar transistor (HBT) devices and the degradation of S-parameters after accelerated aging, respectively. Good agreement was achieved between measured and predicted results of the fresh and aging S-parameters within a frequency range of 0.1 to 40 GHz. © 2023 IEEE.

关键词： Scattering parameters

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Pressure-triggered stacking dependence of interlayer coupling in bilayer WS_(2)

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Science China(Physics,Mechanics & Astronomy) 2024年第8期67卷 177-186页

作者： Zejuan Zhang Chenyin Jiao Shenghai Pei Xilong Zhou Jiaze Qin Wanli Zhang Yu Zhou Zenghui Wang Juan Xia School of Integrated Sciences and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of ChinaChengdu 610054China Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 611731China School of Physics and Electronics Hunan Key Laboratory of Nanophotonics and DevicesCentral South UniversityChangsha 410083China

Tungsten disulfide(WS_(2))has been reported to show negligible stacking dependence under ambient conditions,impeding its further explorations on physical properties and potential ***,we realize efficient modulation of interlayer coupling in bilayer WS_(2)with 3R and 2H stackings by high pressure,and find that the pressure-triggered interlayer coupling and pressure-induced resonant-to-nonresonant transition exhibit prominent stacking dependence,which are experimentally observed for the first time in *** work may unleash the stacking degree of freedom in designing WS_(2)devices with tailored properties correlated to interlayer coupling.

关键词： tungsten disulfide pressure engineering stacking order interlayer coupling

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Comparsion of SiC Planar and Trench Junction Barrier Schottky Diode with Surge Current Capability 17

Comparsion of SiC Planar and Trench Junction Barrier Schottk...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Zhao, Zi-Ming Liu, Yan-Cong Yuan, Hao Du, Feng-Yu Zhou, Yu Liu, Ke-Yu Tang, Xiao-Yan Han, Chao Song, Qing-Wen Zhang, Yu-Ming School of Microelectronics Xidian University Key Laboratory of Wide Band Gap Semiconductor Materials and Devices Xi'an China The Xidian-Wuhu Research Institute Wuhu241000 China

ISBN: (纸本)9798350361834

The surge capabilities of SiC planar junction barrier schottky diodes and trench junction barrier schottky diodes are analyzed and compared by experiment and simulation in this paper. Though experimental comparison, the maximum surge current of SiC trench JBS is larger than SiC planar JBS, improved by 8.5%. The leakage current of the trench structure is approximately one order of magnitude lower than that of the planar structure at voltages below 1300 V, sacrificing only a small forward voltage drop. Thanks to the deep P+ region design, the p-n junction turn-on voltage in SiC trench JBS diodes is substantially decreased, and the results of both the experiment and simulation studies demonstrate that the trench structure exhibits superior surge capability. © 2024 IEEE.

关键词： Schottky barrier diodes

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Ferroelectric-controlled graphene plasmonic surfaces for all-optical neuromorphic vision

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Science China(Technological Sciences) 2024年第3期67卷 765-773页

作者： CHEN JianBo LIU Yu LI ShangDong LIN Lin LI YaDong HUANG Wen GUO JunXiong School of Electronic Information and Electrical Engineering Institute for Advanced StudyChengdu UniversityChengdu 610106China School of Integrated Circuits Tsinghua UniversityBeijing 100084China School of Integrated Circuits(National Exemplary Schoolof Microelectronics) Universityof Electronic Science and Technologyof China Chengdu 610054China Jincheng Research Institute of Opto-mechatronics Industry Jincheng 048000China Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems Jincheng 048000China Engineering Research Center of Digital Imaging and Display Ministry of EducationSoochow UniversitySuzhou 215006China

Artificial visual systems can recognize desired objects and information from complex environments, and are therefore highly desired for pattern recognition, object detection, and imaging applications. However, state-of-the-art artificial visual systems with high recognition performances that typically consist of electronic devices face the challenges of requiring huge storage space and high power consumption owing to redundant data. Here, we report a terahertz(THz) frequency-selective surface using a graphene split-ring resonator driven by ferroelectric polarization for efficient visual system applications. The downward polarization of the ferroelectric material offers an ultrahigh electrostatic field for doping p-type graphene with an anticipated Fermi level. By optimizing the geometric parameters of the devices and modulating the carrier behaviors of graphene, our plasmonic devices exhibit a tunable spectral response in a range of 1.7–6.0 THz with continuous transmission values. The alloptical neural network using graphene plasmonic surfaces designed in this study exhibited excellent performance in visual preprocessing and convolutional filtering and achieved an ultrahigh recognition accuracy of up to 99.3% in training the Modified National institute of Standards and Technology(MNIST) handwritten digit dataset. These features demonstrate the great potential of graphene plasmonic devices for future smart artificial vision systems.

关键词： graphene plasmon ferroelectric frequency selective surface artificial vision system

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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

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Chinese Physics B 2024年第1期33卷 554-562页

作者：冯亚辉郭红霞刘益维欧阳晓平张晋新马武英张凤祁白如雪马晓华郝跃 State Key Laboratory of Wide Bandgap Semiconductor Devices School of MicroelectronicsXidian UniversityXi'an 710071China School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China School of Space Science and Technology Xidian UniversityXi'an 710071China State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation Northwest Institute of Nuclear TechnologyXi'an 710024China

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases ***, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

关键词： silicon–germanium heterojunction bipolar transistor(Si Ge HBT) 100-Me V proton technology computer-aided design(TCAD) single event effect(SEE)

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Demonstration of vertical Ga2O3 Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology

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The European Physical Journal Special Topics 2025年 1-8页

作者： Liu, Hongyu Han, Shida Lu, Xiaoli Wang, Yuangang Dun, Shaobo Han, Tingting Lv, Yuanjie Feng, Zhihong State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research Institute Shijiazhuang China

In this letter, by implementing thermal oxidation (TO) technology, vertical Ga2O3 Schottky barrier diodes were directly fabricated on a heavily doped single-crystal (001) β-Ga2O3 substrate without epitaxial growth. The electron concentration in near-surface region of the Ga2O3 substrate was greatly reduced by introducing high-temperature TO processing. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) results indicated that the oxygen vacancy (VO) content in the near-surface region was significantly decreased, while a 500–700 nm acceptor-like defect energy level combining multiple gallium vacancy (VGa) generated, and compensated for, the free carriers after annealing in an oxygen-rich atmosphere at high temperature. The annealing temperature and time were analyzed and optimized. Finally, vertical β-Ga2O3 SBDs with a breakdown voltage (Vbr) of 460 V, specific on-resistance (Ron,sp) of 10.5 mΩ·cm2 and a power figure-of-merit (PFOM) of 20.2 MW/cm2, were demonstrated when the annealing temperature and time were 900 °C and 2 h. These results indicate that vertical β-Ga2O3 SBDs can be directly fabricated on a single-crystal substrate without epitaxial growth, providing a new method of reducing the cost of such devices.

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Revealing the atomic mechanism of diamond–iron interfacial reaction

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Carbon Energy 2024年第3期6卷 255-263页

作者： Yalun Ku Kun Xu Longbin Yan Kuikui Zhang Dongsheng Song Xing Li Shunfang Li Shaobo Cheng Chongxin Shan Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhouChina Department of Mechanical Engineering Stanford UniversityStanfordCaliforniaUSA Information Materials and Intelligent Sensing Laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of EducationInstitutes of Physical Science and Information TechnologyAnhui UniversityHefeiChina Institute of Quantum Materials and Physics Henan Academy of SciencesZhengzhouChina

Diamond,with ultrahigh hardness,high wear resistance,high thermal conductivity,and so forth,has attracted worldwide ***,researchers found emergent reactions at the interfaces between diamond and ferrous materials,which significantly affects the performance of diamond-based ***,combing experiments and theoretical calculations,taking diamond–iron(Fe)interface as a prototype,the counter-diffusion mechanism of Fe/carbon atoms has been ***,it is identified that Fe and diamond first form a coherent interface,and then Fe atoms diffuse into diamond and prefer the carbon vacancies ***,the relaxed carbon atoms diffuse into the Fe lattice,forming Fe_(3)***,graphite is observed at the Fe_(3)C surface when Fe_(3)C is over-saturated by carbon *** present findings are expected to offer new insights into the atomic mechanism for diamondferrous material's interfacial reactions,benefiting diamond-based device applications.

关键词： coherent interface counter-diffusion diamond iron phase transition

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Impact of O_(2)post oxidation annealing on the reliability of SiC/SiO_(2)MOS capacitors

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Chinese Physics B 2021年第7期30卷 461-466页

作者： Peng Liu Ji-Long Hao Sheng-Kai Wang Nan-Nan You Qin-Yu Hu Qian Zhang Yun Bai Xin-Yu Liu Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this *** results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TDDB)characteristics of the oxide,are affected by POA temperature and are closely ***,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality ***,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.

关键词： SiC O_(2)post oxidation annealing interface traps MOS

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Improved Channel Width and Morphology of Epi Silicon FinFET via Low Thermal Budgets Fin Thinning Technology 17

Improved Channel Width and Morphology of Epi Silicon FinFET ...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Wang, Peng Lu, Yupeng Sang, Guanqiao Jiang, Renjie Cao, Lei Li, QingKun Li, Lianlian Zhang, Hang Wang, Zhonrui Zhang, Meihe Zhang, Qingzhu Li, Junfeng Yin, Huaxiang Chinese Academy of Sciences Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China

ISBN: (纸本)9798350361834

In this paper, Atomic level low-temperature ozone (LTO) treatment were utilized to successfully thin the width of fin and improve the morphology. Meanwhile, the drain current of and subthreshold swing of Epitaxial Si FinFET were compared under three scheme. The result show that after 8 cycles of LTO and HF rinsing, the width of fin reduce to 25.16nm, the drain current and subthreshold swing of FinFET device decreased by 51.99% (from 1.46× 1010 A um to 7.00 × 10 11 A/um) and 6.84% (from 72.12 mV/dec to 67.19 mV/dec), respectively. In addition, after 12 cycles of LTO and HF rinsing, the width of fin reduce to 20.16nm, the drain current and subthreshold swing of FinFET device decreased by 71.09% (from 1.46× 1010 A/um to 4.22 × 1011 A/um) and 6.79%((from 72.12 mV/dec to 67.22 mV/dec), respectively. The result provide a guidance for channel morphology optimization and low-temperature integration of FinFET devices at advanced technology nodes. © 2024 IEEE.

关键词： FinFET

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Step-edge controlled fast growth of wafer-scale MoSe_(2)films by MOCVD

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Nano Research 2023年第7期16卷 9577-9583页

作者： Rui Ji Jing Liao Lintao Li Rongji Wen Mengjie Liu Yifeng Ren Jianghua Wu Yunrui Song Minru Qi Zhixing Qiao Liwei Liu Chengbing Qin Yu Deng Yongtao Tian Suotang Jia Yufeng Hao Key Laboratory of Material Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China National Laboratory of Solid State Microstructures College of Engineering and Applied SciencesJiangsu Key Laboratory of Artificial Functional Materialsand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China College of Medical Imaging Shanxi Medical UniversityTaiyuan 030001China MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing 100081China

Two-dimensional(2D)transition metal dichalcogenides(TMDCs),due to their unique physical properties,have a wide range of applications in the next generation of electronics,optoelectronics,and ***-scale preparation of high-quality TMDCs films is critical to realize these potential *** we report a study on metal-organic chemical vapor deposition(MOCVD)growth of wafer-scale MoSe_(2)films guided by the crystalline step edges of miscut sapphire *** established that the nucleation density and growth rate of MoSe_(2)films were positively correlated with the step-edge density and negatively with the growth *** a certain temperature,the MoSe_(2)domains on the substrate with high step-edge density grow faster than that with low *** a result,wafer-scale and continuous MoSe_(2)films can be formed in a short duration(30 min).The MoSe_(2)films are of high crystalline quality,as confirmed by systematic Raman and photoluminescence(PL)*** results provide an important methodology for the rapid growth of wafer-scale TMDCs,which may promote the application of 2D semiconductors.

关键词： MoSe_(2) nucleation density transition metal dichalcogenides metal-organic chemical vapor deposition(MOCVD) waferscale two-dimensional(2D)semiconductor

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