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Associative learning of a three-terminal memristor network for digits recognition

Science China(Information Sciences) 2023年第2期66卷 209-218页

作者： Yiming REN Bobo TIAN Mengge YAN Guangdi FENG Bin GAO Fangyu YUE Hui PENG Xiaodong TANG Qiuxiang ZHU Junhao CHU Chungang DUAN Key Laboratory of Polar Materials and Devices (MOE) Ministry of Education Department of ElectronicsEast China Normal University Zhejiang Lab Institute of Microelectronics Beijing Innovation Center for Future Chips (ICFC) Tsinghua University Collaborative Innovation Center of Extreme Optics Shanxi University

Imitating the associative intelligence of the biological brain is attractive but is poorly achieved in hardware because the complex tunable connection in neural networks is difficult to reproduce. We develop a circuit composed of a three-terminal memristor network to reproduce the biological conditioning process artificially. The synaptic weight between co-firing neurons is strengthened simultaneously by generating a feedback signal from the integrate-and-fire neuron to the gate of the synaptic memristor. The network allows the multi-associative capacity of recalling more than one digit in one circuit. Both single and multi-associative learning for recalling digital images are achieved. Furthermore, all 10 digital images from “0” to “9” are successfully recalled in an associative network with such paralleling circuits. Assisted by this associative layer, a typical classification network effectively improves the recognition rate for fragmentary digital *** work sheds light on brain-inspired artificial associative memory and provides a strategy for applications,such as object recognition with partial features and similar scenes.

关键词： artificial intelligence associative learning memristor classification network

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Comparsion of SiC Planar and Trench Junction Barrier Schottky Diode with Surge Current Capability 17

Comparsion of SiC Planar and Trench Junction Barrier Schottk...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Zhao, Zi-Ming Liu, Yan-Cong Yuan, Hao Du, Feng-Yu Zhou, Yu Liu, Ke-Yu Tang, Xiao-Yan Han, Chao Song, Qing-Wen Zhang, Yu-Ming School of Microelectronics Xidian University Key Laboratory of Wide Band Gap Semiconductor Materials and Devices Xi'an China The Xidian-Wuhu Research Institute Wuhu241000 China

ISBN: (纸本)9798350361834

The surge capabilities of SiC planar junction barrier schottky diodes and trench junction barrier schottky diodes are analyzed and compared by experiment and simulation in this paper. Though experimental comparison, the maximum surge current of SiC trench JBS is larger than SiC planar JBS, improved by 8.5%. The leakage current of the trench structure is approximately one order of magnitude lower than that of the planar structure at voltages below 1300 V, sacrificing only a small forward voltage drop. Thanks to the deep P+ region design, the p-n junction turn-on voltage in SiC trench JBS diodes is substantially decreased, and the results of both the experiment and simulation studies demonstrate that the trench structure exhibits superior surge capability. © 2024 IEEE.

关键词： Schottky barrier diodes

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Revealing the atomic mechanism of diamond–iron interfacial reaction

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Carbon Energy 2024年第3期6卷 255-263页

作者： Yalun Ku Kun Xu Longbin Yan Kuikui Zhang Dongsheng Song Xing Li Shunfang Li Shaobo Cheng Chongxin Shan Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhouChina Department of Mechanical Engineering Stanford UniversityStanfordCaliforniaUSA Information Materials and Intelligent Sensing Laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of EducationInstitutes of Physical Science and Information TechnologyAnhui UniversityHefeiChina Institute of Quantum Materials and Physics Henan Academy of SciencesZhengzhouChina

Diamond,with ultrahigh hardness,high wear resistance,high thermal conductivity,and so forth,has attracted worldwide ***,researchers found emergent reactions at the interfaces between diamond and ferrous materials,which significantly affects the performance of diamond-based ***,combing experiments and theoretical calculations,taking diamond–iron(Fe)interface as a prototype,the counter-diffusion mechanism of Fe/carbon atoms has been ***,it is identified that Fe and diamond first form a coherent interface,and then Fe atoms diffuse into diamond and prefer the carbon vacancies ***,the relaxed carbon atoms diffuse into the Fe lattice,forming Fe_(3)***,graphite is observed at the Fe_(3)C surface when Fe_(3)C is over-saturated by carbon *** present findings are expected to offer new insights into the atomic mechanism for diamondferrous material's interfacial reactions,benefiting diamond-based device applications.

关键词： coherent interface counter-diffusion diamond iron phase transition

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Impact of O_(2)post oxidation annealing on the reliability of SiC/SiO_(2)MOS capacitors

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Chinese Physics B 2021年第7期30卷 461-466页

作者： Peng Liu Ji-Long Hao Sheng-Kai Wang Nan-Nan You Qin-Yu Hu Qian Zhang Yun Bai Xin-Yu Liu Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this *** results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TDDB)characteristics of the oxide,are affected by POA temperature and are closely ***,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality ***,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.

关键词： SiC O_(2)post oxidation annealing interface traps MOS

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Deep Understanding of Charge Trapping Phenomenon in n-FeFET and Endurance Improvement by Interlayer Engineering 17

Deep Understanding of Charge Trapping Phenomenon in n-FeFET ...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Dai, Saifei Xu, Hao Tian, Fengbin Shao, Xianzhou Sun, Xiaoqing Chai, Junshuai Wang, Xiaolei Wang, Wenwu Chinese Academy of Sciences Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing China Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China

ISBN: (纸本)9798350361834

A comprehensive model is developed to study the charge trapping phenomenon in n-FeFET to pave the way for endurance improvement. The excess electron trapping and the coupling of Δ Q t and Δ P s are explained by trap occupancy. The MW degradation and endurance fatigue mechanism are explored, and new insight into endurance improvement is revealed by ascending the trap energy level (E t ). We also find that the N incorporation into the interlayer not only increases the dielectric constant but also can ascend the E t and improve endurance. © 2024 IEEE.

关键词： Charge trapping

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Achieving 2.1%Effciency in Alpha-Voltaic Cell Based on Silicon Carbide Transducer

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Energy & Environmental Materials 2025年第2期8卷 305-311页

作者： Runlong Gao Wuying Ma Pengying Wan Ao Liu Xiao Ouyang Xue Du Qiantao Lei Qi Deng Linyue Liu Xiaoping Ouyang Sino-French Institute of Nuclear Engineering and Technology Sun Yat-Sen UniversityZhuhai 519082China National Key Laboratory of Intense Pulsed Radiation Simulation and Effect Northwest Institute of Nuclear TechnologyXi’an 710024China School of Microelectronics Xi'an Jiaotong UniversityXi’an 710049China State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices InstituteNanjingJiangsu 210016China Key Laboratory of Beam Technology of Ministry of Education School of Physics and AstronomyBeijing Normal UniversityBeijing 100875China Department of Engineering Physics Tsinghua UniversityBeijing 100084China Shanghai Institute of Applied Physics Chinese Academy of SciencesShanghai 201800China

Alpha-voltaic cell is a type of micro nuclear battery that provides several decades of reliable power in the nano watt to microwatt range,supplying for special applications where traditional chemical batteries or solar cells are difficult to ***,the power conversion efficiency of the alpha-voltaic cells reported are still far behind the theoretical limit,making the development of alpha-voltaic cell *** advanced semiconductor transducers with higher efficiency in converting the energy of alpha particles into electric energy is proving to be necessary for realizing high-power conversion ***,we propose an alpha-voltaic cell based on SiC PIN transducer that includes a sensitive region with an area of 1 cm^(2),a width of 51.2μm,and a charge collection efficiency of 95.6%at 0 V *** find that optimizing the unintentional doping concentration and crystal quality of the SiC epitaxial layer can significantly increase the absorption and utilization of the energy of alpha particles,resulting in a 2.4-fold enhancement in power conversion efficiency compared with that of the previous *** properties of the SiC alpha-voltaic cell are measured using an He-ion accelerator as the equivalentα-radioisotopes,with the best power conversion efficiency of 2.10%and maximum output power density of 406.66 nW cm-2 is *** research makes a big leap in SiC alpha-voltaic cell,bridging the gap between micro nuclear batteries and practical applications in micro-electromechanical systems,micro aerial vehicles,and tiny satellites.

关键词： alpha-voltaiccell high-powerconversionefficiency nuclearbattery SiCPIN transducer

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Investigation of the Channel Width Dependence of IGZO TFT by Experiment and TCAD Simulation 17

Investigation of the Channel Width Dependence of IGZO TFT by...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Yang, Yanyu Lu, Yupeng Liu, Shuang Jiang, Renjie Luo, Jie Bao, Yunjiao Wang, Peng Xu, Gaobo Yin, Huaxiang Chinese Academy of Sciences Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China

ISBN: (纸本)9798350361834

In this study a inverted stagger IGZO TFTs with 350nm/250nm/100nm/50nm channel width was realized by dry etching during an active layer pattern. A severe degradation was observed with threshold voltage shift positively, SS enlarge, and mobility degradation when channel width was down to 50nm. Assisted by TCAD simulation and previous report, we confirm this degradation is attributed to insufficient reacted methyl ion and by-product absorbed on channel sidewall from the dry etching process. The methyl ion acts as negative interface trap and induces depletion region in the channel margin. This degradation effect is particularly severe when the channel width is below 100 nm. © 2024 IEEE.

关键词： Dry etching

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Step-edge controlled fast growth of wafer-scale MoSe_(2)films by MOCVD

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Nano Research 2023年第7期16卷 9577-9583页

作者： Rui Ji Jing Liao Lintao Li Rongji Wen Mengjie Liu Yifeng Ren Jianghua Wu Yunrui Song Minru Qi Zhixing Qiao Liwei Liu Chengbing Qin Yu Deng Yongtao Tian Suotang Jia Yufeng Hao Key Laboratory of Material Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China National Laboratory of Solid State Microstructures College of Engineering and Applied SciencesJiangsu Key Laboratory of Artificial Functional Materialsand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China College of Medical Imaging Shanxi Medical UniversityTaiyuan 030001China MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing 100081China

Two-dimensional(2D)transition metal dichalcogenides(TMDCs),due to their unique physical properties,have a wide range of applications in the next generation of electronics,optoelectronics,and ***-scale preparation of high-quality TMDCs films is critical to realize these potential *** we report a study on metal-organic chemical vapor deposition(MOCVD)growth of wafer-scale MoSe_(2)films guided by the crystalline step edges of miscut sapphire *** established that the nucleation density and growth rate of MoSe_(2)films were positively correlated with the step-edge density and negatively with the growth *** a certain temperature,the MoSe_(2)domains on the substrate with high step-edge density grow faster than that with low *** a result,wafer-scale and continuous MoSe_(2)films can be formed in a short duration(30 min).The MoSe_(2)films are of high crystalline quality,as confirmed by systematic Raman and photoluminescence(PL)*** results provide an important methodology for the rapid growth of wafer-scale TMDCs,which may promote the application of 2D semiconductors.

关键词： MoSe_(2) nucleation density transition metal dichalcogenides metal-organic chemical vapor deposition(MOCVD) waferscale two-dimensional(2D)semiconductor

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Improved Channel Width and Morphology of Epi Silicon FinFET via Low Thermal Budgets Fin Thinning Technology 17

Improved Channel Width and Morphology of Epi Silicon FinFET ...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Wang, Peng Lu, Yupeng Sang, Guanqiao Jiang, Renjie Cao, Lei Li, QingKun Li, Lianlian Zhang, Hang Wang, Zhonrui Zhang, Meihe Zhang, Qingzhu Li, Junfeng Yin, Huaxiang Chinese Academy of Sciences Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China

ISBN: (纸本)9798350361834

In this paper, Atomic level low-temperature ozone (LTO) treatment were utilized to successfully thin the width of fin and improve the morphology. Meanwhile, the drain current of and subthreshold swing of Epitaxial Si FinFET were compared under three scheme. The result show that after 8 cycles of LTO and HF rinsing, the width of fin reduce to 25.16nm, the drain current and subthreshold swing of FinFET device decreased by 51.99% (from 1.46× 1010 A um to 7.00 × 10 11 A/um) and 6.84% (from 72.12 mV/dec to 67.19 mV/dec), respectively. In addition, after 12 cycles of LTO and HF rinsing, the width of fin reduce to 20.16nm, the drain current and subthreshold swing of FinFET device decreased by 71.09% (from 1.46× 1010 A/um to 4.22 × 1011 A/um) and 6.79%((from 72.12 mV/dec to 67.22 mV/dec), respectively. The result provide a guidance for channel morphology optimization and low-temperature integration of FinFET devices at advanced technology nodes. © 2024 IEEE.

关键词： FinFET

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Investigation on Asymmetric HfO2-ZrO2-HfO2Superlattice Gate Stacks with Ultra-Low EOT for Advanced Transistors 17

Investigation on Asymmetric HfO2-ZrO2-HfO2Superlattice Gate ...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Lyu, Haiyuan Zhong, Kun Zhang, Zhaohao Yin, Huaxiang Chinese Academy of Sciences Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China

In this work, equivalent oxide thickness (EOT) and leakage currents of HfO2-ZrO2- HfO2 gate stack with symmetric (HZH) and asymmetric (HHZH or HZHH) structure were investigated based on metal oxide semiconductor capac... 详细信息

ISBN: (纸本)9798350361834

关键词： Hafnium oxides

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