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European Conference on Radiation and its Effects on Components and Systems (RADECS)

作者： Yichao Sun Peng Lu Xu Zhang Junjun Zhang Can Yang Qingzhu Zhang Zhengsheng Han Bo Li Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Institute of Microelectronics Chinese Academy of Sciences University of Chinese Academy of Sciences Beijing China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Beijing China Institute of Microelectronics Chinese Academy of Sciences Beijing China

This work proposes a 3D TID effect simulation methodology for sub-22-nm node SOI FinFETs. The method captures the S/D-induced non-uniform charge generation under irradiation, providing physical insights into the TID e...

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Synergistic effect of total ionizing dose and electromagnetic interference in current reference circuits using scaling-down SOI technologies 13

Synergistic effect of total ionizing dose and electromagneti...

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13th Asia-Pacific International Symposium on Electromagnetic Compatibility and Technical Exhibition, APEMC 2022

作者： Wang, Z. Wu, J. Li, B. Zhang, H. Zhao, X. Li, J. Zhao, W. Ye, T. Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou China Institute of Microelectronics of Chinese Academy of Sciences Beijing China Key Laboratory of Silicon Devices and Technology Chinese Academy of Sciences Beijing China National University of Defense Technology Changsha China Tianjin Institute of Advanced Technology Tianjin China

ISBN: (数字)9781665416719

ISBN: (纸本)9781665416719

This paper studies the behavior characteristics of the same structure circuits manufactured by three different technology nodes in the synergistic environment of total ionizing dose (TID) irradiation and electromagnetic interference (EMI). The experimental results show that the irradiation degrade the EMI immunity of the circuit with larger process feature size. Concurrently, the irradiation induces the abnormal startup problem of the circuit in the complex noise frequency domain environment, and the larger the technology feature size of the circuit can make the starting problem of the circuit worse. © 2022 IEEE.

关键词： Signal interference

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X-ray irradiation-induced degradation in Hf_(0.5)Zr_(0.5)O_(2) fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

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Rare Metals 2021年第11期40卷 3299-3307页

作者： Yu-Dong Li Qing-Zhu Zhang Fan-Yu Liu Zhao-Hao Zhang Feng-Yuan Zhang Hong-Bin Zhao Bo Li Jiang Yan Key Laboratory of Microelectronics Devices and Integrated Technology Integrated Circuit Advanced Process Center(ICAC)Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co.LtdBeijing 100088China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China School of Information Science and Technology North China University of TechnologyBeijing 100144China

The n-type ultrathin fully depleted silicon-on-insulator(FDSOI) metal-oxide-semiconductor field-effect transistors(MOSFETs),with a Hf_(0.5)Zr_(0.5)O_(2) high dielectric permittivity(high-k) dielectric as gate insulator,were *** total ionizing dose effects were investigated,and an X-ray radiation dose up to 1500 krad(Si) was applied for both long-and short-channel *** short-channel devices(0.025-0.100 μm) exhibited less irradiation sensitivity compared with the long-channel devices(0.35-16 μm),leading to a 71% reduction in the irradiation-induced drain current growth and a 26% decrease in the shift of the threshold *** was experimentally demonstrated that the OFF mode is the worst case among the three working conditions(OFF,ON and A110) for short-channel ***,the determined effective electron mobility was enhanced by 38% after X-ray irradiation,attributed to the different compensations for charges triggered by radiation between the highk dielectric and buried *** extracting the carrier mobility,gate length modulation,and source/drain(S/D)parasitic resistance,the degradation mechanism on X-ray irradiation was ***,the split capacitance-voltage measurements were used to validate the analysis.

关键词： Total ionizing dose Fully depleted silicon-on-insulator(FDSOI) Metal–oxide–semiconductor field-effect transistor(MOSFET) High-k Hf_(0.5)Zr_(0.5)O_(2)

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Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing

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science China(Information sciences) 2023年第12期66卷 261-266页

作者： Yang FENG Bing CHEN Mingfeng TANG Yueran QI Maoying BAI Chengcheng WANG Hai WANG Xuepeng ZHAN Junyu ZHANG Jing LIU Jixuan WU Jiezhi CHEN School of Information Science and Engineering Shandong University School of Micro-nano Electronics Zhejiang University Neumem Co. Ltd Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences

We propose a NOR flash-based computing-in-memory(CIM) to implement high-precision(32-bit) Poisson image editing, including the gradient operations and Laplace operation. To meet the requirements of image processing, CIM operation schemes and reliabilities are carefully studied and optimized,showing that the power consumption at the near-threshold-voltage(NTV) region can be as low as 40 fJ/bit,which is two orders lower than working at the saturation region. High-temperature retention, as well as various disturbs, are also analyzed. The proposed CIM scheme can be applied as an energy-efficient approach to construct the high-precision image processing accelerator.

关键词： NOR flash memory computing-in-memory variation Poisson image editing

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CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments

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science China Materials 2022年第6期65卷 1623-1630页

作者： Ying Zhang Xiaolong Zhao Xiaolan Ma Yu Liu Xuanze Zhou Meiyun Zhang Guangwei Xu Shibing Long Key Laboratory of Microelectronic Devices&Integration Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Microelectronics University of Science and Technology of ChinaHefei 230026China University of Chinese Academy of Sciences Beijing 100049China

Resistive switching random access memory(RRAM)is one of the most promising candidates with highdensity three-dimensional integration characteristics for nextgeneration nonvolatile memory ***,the poor uniformity issue caused by the stochastic property of the conductive filament(CF)impedes the large-scale manufacture of RRAM *** array has been introduced into the RRAM to minimize the CF randomness,but the methods are cumbersome,expensive,or resolution-limited for large-scale *** this work,Si subulate array(SSA)substrates with different curvature radii prepared by a wafer-scale and nanoscale-controllable method are introduced for RRAM *** SSA structure,which induces a quasi-single CF or a few CFs formed in the tip region(TR)of the device as evidenced by the high-resolution transmission electron microscopy and energy dispersive spectroscopy characterization,dramatically improves the cycle-to-cycle and device-to-device *** the curvature radius of the TR significantly improves the device performance,including switching voltages,high/low resistance states,and retention *** improved uniformity can be attributed to the enhanced local electric field in the *** proposed SSA provides a low-cost,uniform,CMOS-compatible,and nanoscale-controllable optimization strategy for the largescale integration of highly uniform RRAM devices.

关键词： resistive switching memristor RRAM Si subulate array enhancement of electric field

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Simultaneous microwave characterization of wafer-level optoelectronic transceiver chips based on photonic sampling and mapping

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science China(Information sciences) 2024年第2期67卷 337-338页

作者： Yutong HE Xinhai ZOU Ying XU Zhihui LI Naidi CUI Junbo FENG Yali ZHANG Zhiyao ZHANG Shangjian ZHANG Yong LIU Ninghua ZHU Research Center for Microwave Photonics State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China Chongqing United Microelectronics Center (CUMEC) Xiongan Institute of Innovation Chinese Academy of Sciences

Photonic integrated circuits(PICs) promise future parallelism growths of high-performance communication, computation, and offer unprecedented bandwidth scalability with reduced power consumption as a viable replacement for an electrical wire with an optoelectronic transceiver consisting of a transmitter and a receiver integrated on the same wafer.

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Investigation of Vertically Stacked Horizontal Gate-All-Around SI Nanosheet Ion Sensitive Field Effect Transistor For Detection of C-Reactive Protein

Investigation of Vertically Stacked Horizontal Gate-All-Arou...

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2023 China Semiconductor technology International Conference, CSTIC 2023

作者： Liu, Yang Zhang, Qingzhu Li, Junjie Wu, Cinan Cao, Lei Luo, Yanna Zhang, Zhaohao Wei, Shuhua Wei, Qianhui Yao, Jiaxin Hu, Jiawei Qin, Meiyan Liu, Enxu Han, Yanchu Li, LianLian Li, YingLu Yang, Tao Zhou, Na Gao, Jianfeng Li, Junfeng Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Beijing100029 China Guizhou University College of Big Data and Information Engineering Guiyang550025 China North China University of Technology School of Information Science and Technology Beijing100144 China State Key Laboratory of Advanced Materials for Smart Sensing Grinm Group Co. Ltd. Beijing100088 China

ISBN: (纸本)9798350311006

In this work, based on advanced gate-all-around (GAA) technology, the extended sensing gate (ESG) GAA Si nanosheet (SiNS) ion sensitive field effect transistor (ISFET) sensor was fabricated and reported for the first time. Due to the GAA structures and the vertically-stacked SiNS channels, the average sensitivity of the ESG GAA SiNS ISFET sensor can be reached 58.8 mV/pH, which provides good gate control and ultra-sensitive detection capabilities. In addition, the actual minimum detection concentration of C-reactive protein (CRP) by ESG GAA SiNS ISFET sensor in 1× PBS environment is as low as 100pg/mL, which is much lower than the normal concentration of human body. © 2023 IEEE.

关键词： Nanosheets

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A DC-DC converter utilizing \beta-\text{Ga}_{2}O}_{3 Schottky barrier diode 5

A DC-DC converter utilizing \beta-\text{Ga}_{2}O}_{3 Schottk...

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5th IEEE Electron devices technology and Manufacturing Conference, EDTM 2021

作者： Guo, Wei Jian, Guangzhong Wu, Feihong Zhou, Kai Xu, Guangwei Zhou, Xuanze He, Qiming Zhao, Xiaolong Long, Shibing School of Microelectronics University of Science and Technology of China Hefei230026 China Key Laboratory of Microelectronics Devices and Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781728181769

The \beta-\text{Ga}_{2}O}_{3 Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for \beta-\text{Ga}_{2}O}_{3 Sbd is derived from experimental results and applied to DC-DC converter circuit simulation. Then the \beta-\text{Ga}_{2}O}_{3 SBD is implemented in a DC-DC converter circuit and acquired the conversion efficiency of 94.8%, indicating the great potential of Ga2O3-based devices and circuits. © 2021 IEEE.

关键词： Schottky barrier diodes

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Recent progress in organic solar cells(PartⅠmaterial science)

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science China Chemistry 2022年第8期65卷 224-268页

作者： Yahui Liu Bowen Liu Chang-Qi Ma Fei Huang Guitao Feng Hongzheng Chen Jianhui Hou Lingpeng Yan Qingya Wei Qun Luo Qinye Bao Wei Ma Wei Liu Weiwei Li Xiangjian Wan Xiaotian Hu Yanchun Han Yaowen Li Yinhua Zhou Yingping Zou Yiwang Chen Yongfang Li Yongsheng Chen Zheng Tang Zhicheng Hu Zhi-Guo Zhang Zhishan Bo College of Textiles&Clothing State Key Laboratory of Bio-fibers and Eco-textilesQingdao UniversityQingdao 266071China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China Institute of Polymer Optoelectronic Materials and Devices State Key Laboratory of Luminescent Materials and DevicesSouth China University of TechnologyGuangzhou 510640China Beijing Advanced Innovation Center for Soft Matter Science and Engineering&State Key Laboratory of Organic-Inorganic Composites Beijing University of Chemical TechnologyBeijing 100029China State Key Laboratory of Silicon Materials MOE Key Laboratory of Macromolecular Synthesis and FunctionalizationDepartment of Polymer Science and EngineeringZhejiang UniversityHangzhou 310027China Beijing National Laboratory for Molecular Sciences Institute of ChemistryChinese Academy of SciencesBeijing 100190China State Key Laboratory of Powder Metallurgy College of Chemistry and Chemical EngineeringCentral South UniversityChangsha 410083China School of Physics and Electronic Science East China Normal UniversityShanghai 200241China State Key Laboratory for Mechanical Behavior of Materials Xi’an Jiaotong UniversityXi’an 710049China State Key Laboratory and Institute of Elemento-Organic Chemistry Key Laboratory of Functional Polymer MaterialsCollege of ChemistryNankai UniversityTianjin 300071China College of Chemistry/Institute of Polymers and Energy Chemistry(IPEC) Nanchang UniversityNanchang 330031China State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied ChemistryChinese Academy of SciencesChangchun 130022China Laboratory of Advanced Optoelectronic Materials College of ChemistryChemical Engineering and Materials ScienceSoochow UniversitySuzhou 215123China Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China Center for Advanced Low-Dimension Materials State Key Laboratory for Modification of Chemical Fibers and Polymer Material

During past several years,the photovoltaic performances of organic solar cells(OSCs)have achieved rapid progress with power conversion efficiencies(PCEs)over 18%,demonstrating a great practical application *** development of material science including conjugated polymer donors,oligomer-like organic molecule donors,fused and nonfused ring acceptors,polymer acceptors,single-component organic solar cells and water/alcohol soluble interface materials are the key research topics in OSC ***,the recent progress of these aspects is systematically ***,the current problems and future development are also discussed.

关键词： organic solar cells power conversion efficiency photovoltaic materials polymer solar cells

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Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing

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Chinese Physics B 2021年第2期30卷 472-475页

作者： Shu-Xing Zhou Li-Kun Ai Ming Qi An-Huai Xu Jia-Sheng Yan Shu-Sen Li Zhi Jin Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices Hubei University of Arts and ScienceXiangyang 441053China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Hubei Key Laboratory of High Power Semiconductor Technology Xiangyang 441021China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China

Carbon-doped In Ga As Bi films on In P:Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped In Ga As Bi films were characterized by Van der Pauw-Hall measurement and transmission line method(TLM)with and without rapid thermal annealing(RTA).It was found that the specific contact resistance decreases gradually with the increase of carrier *** electron concentration exhibits a sharp increase,and the specific contact resistance shows a noticeable reduction after *** RTA,the In Ga As Bi film grown under CBr4 supply pressure of 0.18 Torr exhibited a high electron concentration of 1.6×10^(21) cm^(-3) and achieved an ultra-low specific contact resistance of 1×10^(-8)Ω·cm^(2),revealing that contact resistance depends greatly on the tunneling effect.

关键词： InGaAsBi electrical properties contact resistance rapid thermal annealing

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