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Recent progress in organic solar cells(PartⅠmaterial science)

science China Chemistry 2022年第8期65卷 224-268页

作者： Yahui Liu Bowen Liu Chang-Qi Ma Fei Huang Guitao Feng Hongzheng Chen Jianhui Hou Lingpeng Yan Qingya Wei Qun Luo Qinye Bao Wei Ma Wei Liu Weiwei Li Xiangjian Wan Xiaotian Hu Yanchun Han Yaowen Li Yinhua Zhou Yingping Zou Yiwang Chen Yongfang Li Yongsheng Chen Zheng Tang Zhicheng Hu Zhi-Guo Zhang Zhishan Bo College of Textiles&Clothing State Key Laboratory of Bio-fibers and Eco-textilesQingdao UniversityQingdao 266071China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China Institute of Polymer Optoelectronic Materials and Devices State Key Laboratory of Luminescent Materials and DevicesSouth China University of TechnologyGuangzhou 510640China Beijing Advanced Innovation Center for Soft Matter Science and Engineering&State Key Laboratory of Organic-Inorganic Composites Beijing University of Chemical TechnologyBeijing 100029China State Key Laboratory of Silicon Materials MOE Key Laboratory of Macromolecular Synthesis and FunctionalizationDepartment of Polymer Science and EngineeringZhejiang UniversityHangzhou 310027China Beijing National Laboratory for Molecular Sciences Institute of ChemistryChinese Academy of SciencesBeijing 100190China State Key Laboratory of Powder Metallurgy College of Chemistry and Chemical EngineeringCentral South UniversityChangsha 410083China School of Physics and Electronic Science East China Normal UniversityShanghai 200241China State Key Laboratory for Mechanical Behavior of Materials Xi’an Jiaotong UniversityXi’an 710049China State Key Laboratory and Institute of Elemento-Organic Chemistry Key Laboratory of Functional Polymer MaterialsCollege of ChemistryNankai UniversityTianjin 300071China College of Chemistry/Institute of Polymers and Energy Chemistry(IPEC) Nanchang UniversityNanchang 330031China State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied ChemistryChinese Academy of SciencesChangchun 130022China Laboratory of Advanced Optoelectronic Materials College of ChemistryChemical Engineering and Materials ScienceSoochow UniversitySuzhou 215123China Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China Center for Advanced Low-Dimension Materials State Key Laboratory for Modification of Chemical Fibers and Polymer Material

During past several years,the photovoltaic performances of organic solar cells(OSCs)have achieved rapid progress with power conversion efficiencies(PCEs)over 18%,demonstrating a great practical application *** development of material science including conjugated polymer donors,oligomer-like organic molecule donors,fused and nonfused ring acceptors,polymer acceptors,single-component organic solar cells and water/alcohol soluble interface materials are the key research topics in OSC ***,the recent progress of these aspects is systematically ***,the current problems and future development are also discussed.

关键词： organic solar cells power conversion efficiency photovoltaic materials polymer solar cells

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Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing

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Chinese Physics B 2021年第2期30卷 472-475页

作者： Shu-Xing Zhou Li-Kun Ai Ming Qi An-Huai Xu Jia-Sheng Yan Shu-Sen Li Zhi Jin Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices Hubei University of Arts and ScienceXiangyang 441053China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Hubei Key Laboratory of High Power Semiconductor Technology Xiangyang 441021China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China

Carbon-doped In Ga As Bi films on In P:Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped In Ga As Bi films were characterized by Van der Pauw-Hall measurement and transmission line method(TLM)with and without rapid thermal annealing(RTA).It was found that the specific contact resistance decreases gradually with the increase of carrier *** electron concentration exhibits a sharp increase,and the specific contact resistance shows a noticeable reduction after *** RTA,the In Ga As Bi film grown under CBr4 supply pressure of 0.18 Torr exhibited a high electron concentration of 1.6×10^(21) cm^(-3) and achieved an ultra-low specific contact resistance of 1×10^(-8)Ω·cm^(2),revealing that contact resistance depends greatly on the tunneling effect.

关键词： InGaAsBi electrical properties contact resistance rapid thermal annealing

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The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI technology

The Effects of $\gamma$ Radiation-Induced Trapped Charges on...

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Annual International Symposium on Reliability Physics

作者： Yuchong Wang Siyuan Chen Fanyu Liu Bo Li Jiangjiang Li Yang Huang Tiexin Zhang Xu Zhang Zhengsheng Han Tianchun Ye Jing Wan Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Institute of Microelectronics Chinese Academy of Sciences University of Chinese Academy of Sciences Beijing China State key lab of ASIC and System School of Information Science and Technology Fudan University Shanghai China

The effects of $\gamma$ radiation-induced positive trapped charges in the top buried oxide layer $\boldsymbol{(\mathrm{Q}_{\text{BOX}1})}$ on the single event transient (SET) response of Double silicon-On-Insulator (DSOI) transistors are examined for the first time through $\gamma$ radiation and pulsed laser experiments. After $\gamma$ radiation, a significant negative shift of threshold voltage for back-channel is observed for both DSOI NMOS and PMOS due to the $\mathrm{Q}_{\text{BO}\mathrm{X}1}$ . The SET current was measured at the device level, and the SET current peak and full width at half maximum (FWHM) were calculated. The impact of $\boldsymbol{\mathrm{Q}_{\text{BOX}1}}$ and back-gate bias on the SET current of the DSOI devices are analyzed in detail. The experiments demonstrate that the SET current of NMOS is enhanced due to the parasitic bipolar transistor (PBT) effect activated by $\boldsymbol{\mathrm{Q}_{\text{BOX}1}}$ , which can be mitigated by applying a dynamic back-gate bias. However, the $\boldsymbol{\mathrm{Q}_{\text{BOX}1}}$ inhibits the SET current and PBT for DSOI PMOS. TCAD simulations further validate this physical mechanism, and then the back-gate bias strategy is proposed for DSOI devices and circuits.

关键词： Single event transients Bipolar transistors Sensitivity Space technology silicon-on-insulator Threshold voltage Transistors

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Tuning 2D magnetism in Fe3+XGeTe2 films by element doping

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National science Review 2022年第6期9卷 163-170页

作者： Shanshan Liu Zihan Li Ke Yang Enze Zhang Awadhesh Narayan Xiaoqian Zhang Jiayi Zhu Wenqing Liu Zhiming Liao Masaki Kudo Takaaki Toriyama Yunkun Yang Qiang Li Linfeng Ai Ce Huang Jiabao Sun Xiaojiao Guo Wenzhong Bao Qingsong Deng Yanhui Chen Lifeng Yin Jian Shen Xiaodong Han Syo Matsumura Jin Zou Yongbing Xu Xiaodong Xu Hua Wu Faxian Xiu State Key Laboratory of Surface Physics and Department of Physics Fudan University Institute for Nanoelectronic Devices and Quantum Computing Fudan University College of Science University of Shanghai for Science and Technology Laboratory for Computational Physical Sciences(MOE) Fudan University Solid State and Structural Chemistry Unit Indian Institute of Science School of Electronic Science and Engineering Nanjing University Department of Physics University of Washington Department of Electronic Engineering Royal Holloway University of London Materials Engineering The University of Queensland Beijing Key Laboratory of Microstructure and Property of Advanced Materials Institute of Microstructure and Property of Advanced Materials Beijing University of Technology The Ultramicroscopy Research Center Kyushu University State Key Laboratory of ASIC and System School of Microelectronics Fudan University Collaborative Innovation Center of Advanced Microstructures Department of Applied Quantum Physics and Nuclear Engineering Kyushu University Centre for Microscopy and Microanalysis The University of Queensland Shanghai Research Center for Quantum Sciences

Two-dimensional（2D） ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature（TC） or phase transitions. One of the challenges, however, is the realization of high TC2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe3+XGeTe2films with TCabove room temperature. By controlling the Fe composition in Fe3+XGeTe2, a continuously modulated TCin a broad range of 185–320 K has been achieved. This widely tunable TCis attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe3+XGeTe2fashion.

关键词： 2D ferromagnetic material Fe3+XGeTe2 film element doping above room temperature TC tunability

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Stacking monolayers at will:A scalable device optimization strategy for two-dimensional semiconductors

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Nano Research 2022年第7期15卷 6620-6627页

作者： Xiaojiao Guo Honglei Chen Jihong Bian Fuyou Liao Jingyi Ma Simeng Zhang Xinzhi Zhang Junqiang Zhu Chen Luo Zijian Zhang Lingyi Zong Yin Xia Chuming Sheng Zihan Xu Saifei Gou Xinyu Wang Peng Gong Liwei Liu Xixi Jiang Zhenghua An Chunxiao Cong Zhijun Qiu Xing Wu Peng Zhou Xinyu Chen Ling Tong Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsZhangjiang Fudan International Innovation CenterFudan UniversityShanghai 200433China The Hong Kong Polytechnic University Shenzhen Research Institute Shenzhen 518057China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of MicroFudan UniversityShanghai 200433China State Key Laboratory of ASIC and System School of Information Science and EngineeringFudan UniversityShanghai 200433China Shanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering East China Normal UniversityShanghai 200241China Shenzhen Six Carbon Technology Shenzhen 518055China Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan UniversityShanghai 200433China

In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability,higher mobility,and broader spectral ***,the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML *** this work,we propose a strategy of stacking MoS_(2) monolayers via a vacuum transfer method,by which one could obtain wafer-scale high-quality MoS_(2) films with the desired number of layers at *** optical characteristics of these stacked ML-MoS_(2) films(>2L)indicate a weak interlayer *** stacked MLMoS_(2) phototransistors show improved optoelectrical performances and a broader spectral response(approximately 300-1,000 nm)than that of 1L-MoS_(2).Additionally,the dual-gate ML-MoS_(2) transistors enable enhanced electrostatic control over the stacked ML-MoS_(2) channel,and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.

关键词： two-dimensional semiconductor field-effect transistors chemical vapor deposition(CVD)synthesis interlayer coupling vacuum transfer method dual-gate transistor

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通过高通量研究识别用于本征陡坡晶体管的原子级薄孤立能带沟道材料

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science Bulletin 2024年第10期69卷 1427-1436页

作者：屈恒泽张胜利曹江吴振华柴扬李卫胜李连忠任文才王欣然曾海波 MIIT Key Laboratory of Advanced Display Materials and Devices College of Material Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China School of Electronic and Optical Engineering Nanjing University of Science and TechnologyNanjing 210094China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China Department of Applied Physics The Hong Kong Polytechnic UniversityHong Kong 999077China National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China Department of Mechanical Engineering The University of Hong KongHong Kong 999077China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Integrated Circuits Nanjing UniversitySuzhou 215163China Suzhou Laboratory Suzhou 215009China

Developing low-power FETs holds significant importance in advancing logic circuits,especially as the feature size of MOSFETs approaches sub-10 ***,this has been restricted by the thermionic limitation of SS,which is limited to 60 mV per decade at room ***,we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize subthermionic SS in *** high-throughput calculations,we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport *** guides us to screen 192 candidates from the 2D material database comprising 1608 ***,the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed,which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 *** work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs.

关键词： 2D materials Electronic band structures Transport properties Steep-slope transistors DFT-NEGF calculations

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Impact of Time Delay Schemes on Reliability Degradation during Program/Erase Cycling in HZO-based FeFETs

Impact of Time Delay Schemes on Reliability Degradation duri...

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IEEE silicon Nanoelectronics Workshop (SNW)

作者： Xiaopeng Li Guoqing Zhao Lu Tai Pengpeng Sang Xiaoyu Dou Xuepeng Zhan Xiaolei Wang Jixuan Wu Jiezhi Chen School of Information Science and Engineering (ISE) Shandong University Qingdao China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350391633

ISBN: (纸本)9798350391640

The commercialization of HZO-based FeFETs is hindered by issues such as MW degradation and poor endurance. In this study, we systematically investigate degradation suppression using time delay schemes. Our findings reveal that symmetric time delay during cycling fails to effectively mitigate MW and SS degradation. Interestingly, we observe that the optimization of MW or SS can be achieved through asymmetric delay (i.e., time delay only after program or erase). It’s found that delay after programming (P-delay) effectively suppresses MW degradation, while delay after erasure (E-delay) proves effective in mitigating SS degradation. This study offers valuable insights into the reliability optimization of HZO-based FeFETs.

关键词： Degradation Delay effects Conferences Programming silicon Delays Reliability

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Modulation of Microstructure and Charge Transport in Polymer Monolayer Transistors by Solution Aging

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Chinese Journal of Chemistry 2021年第11期39卷 3079-3084页

作者： Xuemei Lin Ruochen Liu Chenming Ding Junyang Deng Yifu Guo Shibing Long Ling Li Mengmeng Li Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing100029 China School of Microelectronics University of Science and Technology of ChinaHefeiAnhui230026 China School of Electronic Electrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing100049 China E-mail:

A few monolayers of organic semiconductors adjacent to the dielectric layer are of vital importance in organic field-effect transistors due to their dominant role in charge *** this report,the 2-nm-thick polymer monolayers based on poly(3-hexylthiophene)with different molecular weights(M_(n))were fabricated using dip-coating *** the monolayer(solid state)formation from the solution,a disorder-to-order transition of polymer conformation is observed through UV-vis absorption ***,high Mn polymer monolayer generates higher crystalline fibrillar microstructure than the low Mn one due to the strongerπ–πintermolecular packing between *** importantly,the solution aging procedure is utilized to further improve the morphology of polymer *** is obvious that after aging for 6 d,both fiber dimension and density as well as conjugation length are significantly increased under the same processing conditions in comparison to the fresh solution,and consequently the field-effect mobilities are remarkably enhanced by 2—4 *** that the maximum mobility of 0.027 cm2·V^(–1)·s^(–1)is among the highest reported values for poly(3-hexylthiophene)monolayer *** results demonstrate a simple but powerful strategy for boosting the device performance of polymer monolayer transistors.

关键词： Aggregation Conjugation Monolayers Solution aging Charge transport

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A Novel Triggered Voltage Sensing Structure for High Voltage IGBT

A Novel Triggered Voltage Sensing Structure for High Voltage...

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International Conference on Solid-State and Integrated Circuit technology

作者： Yang Yang Ze-Hong Li Li-Hang Dong Wei Li Peng-Fei Jia Zhi-Yu Yang Li Wan Yi-Shang Zhao Lu-Ping Li Zi-Ming Xia Tong-Yang Wang China Resources Microelectronics (Chongqing) Limited Chongqing China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chengdu China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

A novel triggered voltage sensing structure for high voltage insulated gate bipolar transistor (IGBT) is proposed and simulated in this paper. The voltage sensor is characterized by a controllable starting point for the sensed voltage $(V_{\text{st}})$ . Specifically, when the IGBT voltage $(V_{\text{ce}})$ is less than $V_{\text{st}}$ , the sensor is in the blocking state; but when $V_{\text{ce}}\geq V_{\text{st}}$ , the sensor is triggered to the voltage sensing state. With $R_{\text{se}}$ connected to the sense electrode, the sensor voltage $(V_{\mathrm{s}})$ can replicate a scaled-down version of the $V_{\text{ce}}$ . Based on the 1200 V IGBT, the simulation results show that under the condition of $R_{\text{se}}= 100\Omega, V_{\text{st}}$ is designed to be 300 V, and $V_{\mathrm{s}}=2.74$ V at $V_{\text{ce}} =1200 \mathrm{V}$ . Besides, as $R_{\text{se}}$ increases from $1 \Omega$ to $10 \mathrm{k}\Omega, V_{\mathrm{s}}$ (at $V_{\text{ce}}=1200\mathrm{V})$ increases from 0.26 V to 3.88 V, and $V_{\text{st}}$ decreases from 342 V to 162 V. The results are consistent with the analysis and indicate that the voltage sensor is controllable.

关键词： Insulated gate bipolar transistors Integrated circuit technology Electrodes Simulation Voltage High-voltage techniques Sensors Voltage control

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Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics

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Nano Research 2022年第4期15卷 3667-3674页

作者： Peng Yuan Ge-Qi Mao Yan Cheng Kan-Hao Xue Yunzhe Zheng Yang Yang Pengfei Jiang Yannan Xu Yuan Wang Yuhao Wang Yaxin Ding Yuting Chen Zhiwei Dang Lu Tai Tiancheng Gong Qing Luo Xiangshui Miao Qi Liu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesNo.3Beitucheng West RoadBeijing 100029China University of Chinese Academy of Sciences 19 Yuquan RoadBeijing 100049China School of Integrated Circuits School of Optical and Electronic InformationHuazhong University of Science and Technology1037 Luoyu RoadWuhan 430074China Key Laboratory of Polar Materials and Devices(MOE) Department of ElectronicsEast China Normal University100 Guilin RoadShanghai 430079China Department of Mathematics and Theories Peng Cheng LaboratoryNo.2Xingke 1st StreetShenzhen 518055China

Hafnia-based ferroelectrics have greatly revived the field of ferroelectric memory(FeRAM),but certain reliability issues must be satisfactorily resolved before they can be widely applied in commercial *** particular,the imprint phenomenon severely jeopardizes the read-out reliability in hafnia-based ferroelectric capacitors,but its origin remains unclear,which hinders the development of its recovery *** this work,we have systematically investigated the imprint mechanism in TiN/Hf_(0.5)Zr_(0.5)O_(2)(HZO)/TiN ferroelectric capacitors using experiments and first-principles *** is shown that carrier injection-induced charged oxygen vacancies are at the heart of imprint in HZO,where other mechanisms such as domain pinning and dead layer are less *** imprint model based on electron de-trapping from oxygen vacancy sites has been proposed that can satisfactorily explain several experimental facts such as the strong asymmetric imprint,leakage current variation,and so *** on this model,an effective imprint recovery method has been proposed,which utilizes unipolar rather than bipolar voltage *** remarkable recovery performances demonstrate the prospect of improved device reliability in hafnia-based FeRAM devices.

关键词： hafnia-based ferroelectric imprint build-in electric field oxygen vacancy recovery

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