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International Conference on Solid-State and Integrated Circuit technology

作者： Yang Yang Ze-Hong Li Li-Hang Dong Wei Li Peng-Fei Jia Zhi-Yu Yang Li Wan Yi-Shang Zhao Tong-Yang Wang Zi-Ming Xia State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China China Resources Microelectronics (Chongqing) Limited Chongqing China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chengdu China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

A novel voltage sensor with composite trench structure for high voltage IGBT (insulated gate bipolar transistor) is proposed and numerically investigated in this paper. Based on the capacitance matching between the parasitic capacitance of the composite trench structure and the load capacitance $(C_{\mathrm{L}})$ , the sensor voltage $(V_{\mathrm{s}})$ can replicate a scaled-down version of the IGBT voltage $(V_{\text{ce}})$ . By varying the internal parasitic capacitance and external load capacitance, the designability and controllability of the sensor can be realized, respectively. Simulation results show that, as the structural parameter $W_{\text{mesa}}$ increases from 0.5 μm to 2.5 μm, $V_{\mathrm{s}}$ increases from 1.45 V to 2.08 V (when $V_{\text{ce}}=1200\ \mathrm{V}$ ). Besides, with the increase of $C_{\mathrm{L}}$ (from 0.01 pF to 10 pF), $V_{\mathrm{s}}$ decreases from 2.0 V to 0.92 V at $V_{\text{ce}}=1200$ V. The results are consistent with the analysis.

关键词： Insulated gate bipolar transistors Integrated circuit technology Simulation Voltage High-voltage techniques Controllability Structural engineering Parasitic capacitance

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Millimeter-Wave AlGaN/GaN HEMTs/Si Operated on 12V for 5G RF Handset Applications 16

Millimeter-Wave AlGaN/GaN HEMTs/Si Operated on 12V for 5G RF...

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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Liu, Dong-Sheng Wang, Peng Jiang, Yi-Zhou Huang, Wei Xiao, Zhi-Qiang Yang, Hong-Qiang Zhang, Wei. Fudan University State Key Laboratory of Asic and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Shanghai200433 China Wuxi Microelectronics Scientific and Research Center Wuxi214035 China University of Electronic Science and Technology of China The State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

In this paper, a RF AlGaN/GaN high electron mobility transistor (HEMT) based on low voltage application of 5G RF handset, firstly fabricated on high-resistive silicon substrate is introduced, which uses Ni/Au as T-shaped gate structure and double-layer silicide as surface medium. The maximum output current density of the device is 1.07 A/mm at Vds = 12 V and Vgs = 2 V. fT = 27.8 GHz and BV (the breakdown voltage) = 35 V/μm are obtained for the 180-nm gate-length device with 1-μm source-to-gate spacing. © 2022 IEEE.

关键词： Silicides

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Dependence of Tunneling Mechanism on Two-Dimensional Material Parameters: A High-Throughput Study

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Physical Review Applied 2022年第6期17卷 064053-064053页

作者： Wenhan Zhou Hengze Qu Shiying Guo Bo Cai Hongting Chen Zhenhua Wu Haibo Zeng Shengli Zhang MIIT Key Laboratory of Advanced Display Materials and Devices College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 People’s Republic of China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 People’s Republic of China

A band-to-band tunneling FET (TFET) with an atomical two-dimensional (2D) channel is a potential candidate for the next-generation electronic device in view of its steep subthreshold swing and low power consumption. However, how to establish a precise physical model between the band property of 2D channel materials and the device performance of 2D TFETs is the key to accelerate their practical applications. Herein, through high-throughput first-principles calculations, we study the tunneling transport properties of 44 representative 2D materials with four kinds of crystal system. Particularly, we propose a well-defined and striking exponential scaling law (SS=AeBmr+C) between the subthreshold swings (SSs) and reduced effective masses (mr) of 10-nm TFETs. According to the exponential model, 2D orthorhombic and trigonal crystal TFETs with the steep SS hold the reduced effective masses of more than 0.1 and 0.2m0, which could inhibit tunneling leakage current. These insights provide guidance for material screening in the construction of post-Moore 2D low-power transistors.

关键词： Ballistic transport Electronic structure 2-dimensional systems Field-effect transistors Band structure methods Density functional theory First-principles calculations

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Recent progress of integrated circuits and optoelectronic chips

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science China(Information sciences) 2021年第10期64卷 103-135页

作者： Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI School of Microelectronics Xidian University State Key Laboratory of Integrated Service Networks Xidian University National Integrated Circuit Innovation Center School of Microelectronics Fudan University School of Integrated Circuit Science and Engineering Beihang University China Center for Information Industry Development Frontier Institute of Chip and System Fudan University Institute of Microelectronics Peking University Nanjing Electronic Devices Institute State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Institute of Microelectronics Tsinghua University Center for Carbon-based Electronics Department of Electronics Peking University CAS Key Laboratory of Quantum Information University of Science and Technology of China CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Origin Quantum Computing Company Limited Key Laboratory of Flexible Electronics & Institute of Advanced Materials Nanjing Tech University State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China National Laboratory of Solid State Microstructures & College of Engineering and Applied Sciences Nanjing University State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer Science Peking University School of Electrical and Electronic Engineering Tiangong University Center for Information Photonics and Communications School of Information Science and TechnologySouthwest Jiaotong University School of Electronic Electrical and Communication Engineering

Integrated circuits(ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore's law" in the past 60 years, and now has entered the post Moore's law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

关键词： integrated circuit photonic neural computing semiconductor science and technology optoelectronic device and chip photonic integrated circuit wide bandgap semiconductors silicon photonics hybrid integration quantum chip integrated microwave photonic

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Fabrication and Performance Research of silicon Nanosheet Field Effect Transistor Biosensor

Fabrication and Performance Research of Silicon Nanosheet Fi...

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2022 China Semiconductor technology International Conference, CSTIC 2022

作者： Xiong, Enyi Zhang, Zhaohao Zhang, Qingzhu Wei, Shuhua Wei, Qianhui Zhang, Jing Yan, Jiang School of Information Science and Technology North China University of Technology Beijing100144 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Beijing100029 China State Key Laboratory of Advanced Materials for Smart Sensing Grinm Group Co. Ltd. Beijing100088 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

silicon nanowire (SiNW) FET biosensor has made great contributions to chemical and bio-molecular sensing, and is considered to be one of the best candidates for biosensors. However, due to high sensitivity to pH changes of the buffer solution when detecting biomolecules and low binding rate to biomolecules for small area, SiNW FET biosensor still has the problems of high variation and long response time. To solve the problems, In this paper, we investigate the sensing performances of silicon nanosheets (SiNS) FET with different areas, and found that SiNS FET biosensor with large areas can reduce the sensitivity to pH effectively, thus reducing the detection error caused by pH changes and improving sensing accuracy. In addition, by COMSOL simulating, we also found that devices with wide SiNS show higher bonding rate than that of SiNW devices at low analyte concentrations, thereby decreasing the responding time for high-speed detecting. © 2022 IEEE.

关键词： Nanosheets

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An Unprecedented Efficiency with Approaching 21%Enabled by Additive‑Assisted Layer‑by‑Layer Processing in Organic Solar Cells

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Nano-Micro Letters 2025年第2期17卷 372-375页

作者： Shuai Xu Youdi Zhang Yanna Sun Pei Cheng Zhaoyang Yao Ning Li Long Ye Lijian Zuo Ke Gao Key Laboratory of Advanced Green Functional Materials College of ChemistryChangchun Normal UniversityChangchun 130032People’s Republic of China Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion School of Chemistry and Chemical EngineeringShandong UniversityQingdao 266237People’s Republic of China College of Polymer Science and Engineering Sichuan UniversityChengdu 610065People’s Republic of China State Key Laboratory and Institute of Elemento‑Organic Chemistry Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer MaterialsRenewable Energy Conversion and Storage Center(RECAST)College of ChemistryNankai UniversityTianjin 300071People’s Republic of China Institute of Polymer Optoelectronic Materials and Devices State Key Laboratory of Luminescent Materials and Devices South China University of TechnologyGuangzhou 510640People’s Republic of China Tianjin Key Laboratory of Molecular Optoelectronic Sciences School of Materials Science and EngineeringTianjin UniversityTianjin 300350People’s Republic of China State Key Laboratory of Silicon Materials MOE Key Laboratory of Macromolecular Synthesis and FunctionalizationDepartment of Polymer Science and EngineeringZhejiang UniversityHangzhou 310027People’s Republic of China

Recently published in Joule,Feng Liu and colleagues from Shanghai Jiaotong University reported a record-breaking 20.8%power conversion efficiency in organic solar cells(OSCs)with an interpenetrating fibril network active layer morphology,featuring a bulk p-in structure and proper vertical segregation achieved through additive-assisted layer-by-layer *** optimized hierarchical gradient fibrillar morphology and optical management synergistically facilitates exciton diffusion,reduces recombination losses,and enhances light capture *** approach not only offers a solution to achieving high-efficiency devices but also demonstrates the potential for commercial applications of OSCs.

关键词： Organic solar cells Additive-assisted layer-by-layer processing Three-dimensional fibril morphology Bulk p-i-n structure Optical management

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650V Planar Anode Gate Super-junction IGBT with Superior Von-EoffTrade-off 16

650V Planar Anode Gate Super-junction IGBT with Superior Von...

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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Li, Luping Li, Zehong Chen, Peng Rao, Qiansheng Yang, Yuanzhen Wan, Jiali Wang, Tongyang Zhao, Yishang Ren, Min University of Electronic Science and Technology of China The State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China University of Electronic Science and Technology of China Chongqing Institute of Microelectronics Industry Technology Chongqing401331 China University of Electronic Science and Technology of China School of Aeronautics and Astronautics Chengdu611731 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

The super-junction IGBT (SJ-IGBT), due to its inherent structural advantages, has the potential for low loss and high frequency applications. To further take the advantage of it, a 650V floating P-pillar SJ-IGBT integrated with a planar anode gate is proposed in this paper, thus a low turn-off loss SJ-IGBT with better Von-Eoff trade-off is obtained. Owing to the introduction of anode gate, electrons in the pillar region can be extracted in advance, thereby the turn-off time and loss both are substantially reduced. Compared with trench backside gates, the planar gate has similar effects and better convenience in process implementation. The TCAD simulation results show that the turn-off delay time and the voltage raise time reduce by 61% and 86%, respectively, and the turn-off loss reduces by 44%. © 2022 IEEE.

关键词： Insulated gate bipolar transistors (IGBT)

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Influence of Interfacial Layers and High-k Post Dielectric Annealing On the Characteristics of MOS devices

Influence of Interfacial Layers and High-k Post Dielectric A...

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China Semiconductor technology International Conference (CSTIC)

作者： Guanqiao Sang Qingzhu Zhang Huaxiang Yin Junfeng Li Xulei Qin Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China ChangChun University of Science and Technology Changchun China University of Chinese Academy of Sciences Beijing China

In this paper, investigation of the effects of Post Dielectric Annealing (PDA) and Interfacial Layers (IL) on the characteristics of Metal-Oxide-Semiconductor (MOS) devices. Based on the traditional MOS fabrication process, the PDA method provides a solution to the problem of large interface trap density (D it ) after direct deposition of HfO 2 medium, and successfully reduces D it by about 78%. At the same time, compare the interface state and electrical characteristics of various IL layer deposition methods. The results showed that the Atomic Layer Deposition (ALD) method reduced D it by nearly 60% over the thermal oxidation method. And the positive shift of the flat band voltage (V fb ) was increased by about 150 m. In addition, analyze the relationship between the change of V fb and the internal charge of the dielectric layer is analyzed, it is found that annealing and IL layer dielectric deposition methods change V fb by affecting the interface defect charge (Q it ) and oxide defect charge (Q ot ). In this work, the results provide a guidance for the interface optimization of advanced devices.

关键词：

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A Novel Trench IGBT with Built-in Temperature Sensing

A Novel Trench IGBT with Built-in Temperature Sensing

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Semiconductor and Electronic technology (ISSET), International Symposium on

作者： Yishang Zhao Zehong Li Tongyang Wang Ziyi Zhou Meng Pi Yige Zheng Wei Li Li Wan Yang Yang Haifeng Qin State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China China Resources Microelectronics Ltd. Chongqing China

ISBN: (数字)9798350390285

ISBN: (纸本)9798350390292

An innovative trench insulated gate bipolar transistor (IGBT) with temperature sensing is proposed for effective on-line monitoring of the junction temperature. The temperature sensing is consisted by the P doped polysilicon region where the sense and ground terminals are separated on the two sides of it, sensor controlling gate and the oxide isolation part. It is easy fabricated with the conventional trench IGBT. Investigated by the technology computer-aided design (TCAD) tools, the sensing signal keeps a brilliant linear relationship with the maximum junction temperature. And the temperature difference between the sensing part and the hotspot is extremely low due to the built-in sensing structure. It has also been verified that the IGBT featuring novel temperature sensing could detect junction temperature change during the short circuit test. Besides that, as the sensing mode has been well developed, the power dissipation of the proposed temperature sensing structure is optimized. That provides a convenient use in the real power systems, which could be regarded as a superior method to monitor system temperature status.

关键词： Temperature sensors Insulated gate bipolar transistors Temperature measurement Voltage Sensors Land surface temperature Power systems Temperature control Junctions Monitoring

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A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability

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science China(Information sciences) 2020年第2期63卷 245-247页

作者： Yang ZHAO Qianqian HUANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University

Dear editor,As CMOS technology scaling down, the reduction of supply voltage and power consumption becomes extremely difficult due to the subthreshold swing(SS) limitation (60 m V/dec) at room *** FET (TFET) with band-to-band tunneling (BTBT) mechanism is regarded as one of the most promising emerging low-power devices due to its sub-60 m V/dec SS and ultra-low off-current

关键词： A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability FET

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