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A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability

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science China(Information sciences) 2020年第2期63卷 245-247页

作者： Yang ZHAO Qianqian HUANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University

Dear editor,As CMOS technology scaling down, the reduction of supply voltage and power consumption becomes extremely difficult due to the subthreshold swing(SS) limitation (60 m V/dec) at room *** FET (TFET) with band-to-band tunneling (BTBT) mechanism is regarded as one of the most promising emerging low-power devices due to its sub-60 m V/dec SS and ultra-low off-current

关键词： A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability FET

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Two-dimensional materials for future information technology: status and prospects

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science China(Information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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Effect of Bit Line Voltage Stress on Half-Selected Device in 1T1R Array

Effect of Bit Line Voltage Stress on Half-Selected Device in...

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IEEE silicon Nanoelectronics Workshop (SNW)

作者： Jinru Lai Danian Dong Xu Zheng Jie Yu Wenxuan Sun Xiaoxin Xu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China School of Microelectronics University of Science and Technology of China Hefei China

ISBN: (数字)9781665459792

ISBN: (纸本)9781665459808

Resistive random access memory (RRAM) becomes one of the solutions of embedded memory under advanced technology node. In this paper, we investigate the program disturb issues for the half-selected cell in 1T1R array. By utilizing the stress testing and RTN measurement, we conclude that the high source-drain voltage induced excess defects in the oxide layer is the main reason for the degradation of the FinFET. Therefore, the program voltage applied on BL of 1T1R array needs to be controlled to guarantee the reliability. keywords: 1T1R, FinFET, half-selected cell, disturbance

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Research on the Latch-Up Mechanism of DSOI at High Temperature

Research on the Latch-Up Mechanism of DSOI at High Temperatu...

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Annual International Symposium on Reliability Physics

作者： Yuchen Wu Fanyu Liu Bo Li Jiangjiang Li Siyuan Chen Yang Huang Jiamin Li Tiexin Zhang Jing Wan Yong Xu Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Beijing China Shanghai Institute of Intelligent Electronics and Systems School of Information Science and Technology Fudan University Shanghai China College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9798350369762

ISBN: (纸本)9798350369779

The latch-up at high temperature is investigated in Double silicon-on-Insulator (DSOI) devices. Experimental results show the leakage current of both NMOS and PMOS increases with temperature rising, and latch-up occurs at 575 K for NMOS and 525 K for PMOS. Noise decreases with increasing temperature before latch-up, and noise increases dramatically when latch-up occurs. The 1/f noise test indicates that the change in carrier concentration dominates the noise change at room temperature, while at high temperature (575 K) it is affected by carrier concentration and mobility. TCAD simulations show that the band-to-band tunneling effect governs the carrier generation around room temperature and the impact ionization weighs more at high temperatures. Finally, a model for high-temperature latch-up in DSOI devices is developed, which can be used to predict latch-up voltage.

关键词： silicon-on-insulator Tunneling Predictive models Impact ionization Temperature control Semiconductor process modeling 1/f noise

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In Situ Graft‑on Fibrous Composites and Nanostructure Interlocking Facilitate Highly Stable Wearable Sensors for SIDS Prevention

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Advanced Fiber Materials 2024年第3期6卷 825-840页

作者： Kaifeng Chen Weitao Wang Zhihao Ye Yabo Dong Linpu Wan Zijian Zhang Cheng Lin Liwu Liu Jinsong Leng Xinyu Wang Wei Yang Shaoxing Qu Zongrong Wang State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027People’s Republic of China Institute of Thermal Science and Technology Shandong UniversityJinan 250061People’s Republic of China School of Computer Science and Technology Zhejiang UniversityHangzhou 310027People’s Republic of China Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province and School of Aeronautics and Astronautics Zhejiang UniversityHangzhou 310027People’s Republic of China Department of Astronautical Science and Mechanics Harbin Institute of Technology(HIT)Harbin 150001People’s Republic of China Center for Composite Materials and Structures Harbin Institute of Technology(HIT)Harbin 150080People’s Republic of China

High-performance and reliable wearable devices for healthcare are in high demand for the health monitoring of infants,ensuring that life-threatening events can be addressed ***,the continuous monitoring of infant respiration for preventing sudden infant death syndrome(SIDS)is proposed using high-performance flexible piezoresistive sensors(FPS).The thorny challenges associated with FPS,including the signal drift and poor repeatability,are progressively improved via the employment of high-Tg matrix,the strengthening of in situ graft-on conducting polyaniline layer byβ-cyclodextrin(β-CD),and the nanostructure interlocking between the piezoresistive layer and *** sensor presents high linear sensitivity(30.7 kPa^(−1)),outstanding recoverability(low hysteresis up to 1.98%FS),static stability(4.00%signal drift after 24 h at 2.4 kPa)and dynamic stability(1.92%decay of signal intensity after 50,000 cycles).A wireless infant respiration monitoring system is *** patterns and the real-time respiration rate are displayed on the *** are implemented when abnormal status such as bradypnea and tachypnea is detected.

关键词： Wearable devices Flexible pressure sensor Respiration monitoring Inclusion complex In situ graft-on composite

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Excited-state regulation in eco-friendly ZnSeTe-based quantum dots by cooling engineering

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science China Materials 2022年第6期65卷 1569-1576页

作者： Baoqiang Wu Shuangyi Zhao Mingshui Zhang Zhigao Huang Chen Chen Zhigang Zang Yue Wang MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics&NanomaterialsCollege of Materials Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China Key Laboratory of Optoelectronic Technology&Systems(Ministry of Education) Chongqing UniversityChongqing 400044China School of Microelectronics and Communication Engineering Chongqing UniversityChongqing 400044China

The production of high-quality eco-friendly quantum dots(QDs)is challenging because of the efficient yet elusive nonradiative recombination *** study examined the effects of cooling engineering on regulating the excited states to realize high-quality ZnSeTe core-shell *** presence of ultrafast hot-carrier trapping and band-edge carrier trapping is responsible for the poor emission efficiency in ZnSeTe *** above processes can be suppressed simultaneously by engineering the cooling process,and the underlying mechanisms are interrogated by combined electronic and spectroscopic *** engineered ZnSeTe QDs exhibited record-high efficiency(>90%)and stability that were comparable to those of the canonical CdSe *** on the achievement,the ZnSeTe QD-based white light-emitting diodes(WLEDs)showed excellent optical performance,including a high color-rendering index of 80 and an appropriate correlated color temperature of 7391 ***,the WLEDs could serve as light sources in ecofriendly visible light *** results highlight the feasibility of eco-friendly QDs for practical applications without environmental hazards.

关键词： eco-friendly quantum dot ZnSeTe carrier dynamics white light emission visible light communication

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High-Throughput Growth of Hexagonal Boron Nitride Film Using Porous-Structure Isolation Layer

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Journal of Materials science and Chemical Engineering 2023年第3期11卷 45-51页

作者： Ruitao Jia Fangzhu Qing Xuesong Li School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics) University of Electronic Science and Technology of China Chengdu China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen China

Chemical vapor deposition is considered as the most hopeful method for the synthesis of large-area high-quality hexagonal boron nitride on the substrate of catalytic metal. However, the size the hexagonal boron nitride films are limited to the size of growth chamber, which indicates a lower production efficiency. In this paper, the utilization efficiency of growth chamber is highly improved by alternately stacking multiple pieces of Cu foils and carbon fiber surface felt with porous structure. Uniform and continuous hexagonal boron nitride films are prepared on Cu foils through chemical vapor deposition utilizing ammonia borane as the precursor. This work develops a simple and practicable method for high-throughput preparation of hexagonal boron nitride films, which could contribute to the industrial application of hexagonal boron nitride. .

关键词： Hexagonal Boron Nitride Chemical Vapor Deposition Porous Structure Isolation Layer High Throughput

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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks

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science China(Information sciences) 2020年第2期63卷 248-250页

作者： Hong YANG Luwei QI Yanbo ZHANG Bo TANG Qianqian LIU Hao XU Xueli MA Xiaolei WANG Yongliang LI Huaxiang YIN Junfeng LI Huilong ZHU Chao ZHAO Wenwu WANG Tianchun YE Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences National Space Science Center Chinese Academy of Sciences School of Microelectronics University of Chinese Academy of Sciences

Dear editor,High k/metal gate (HKMG) stacks with fully gatelast processing have become the primary solution for sub-22-nm volume manufacturing with the development of complementary oxide semiconductor(CMOS) technology [1]. In the HKMG stack, titanium nitride (TiN) is observed to play an important role as a work-function metal and an HK

关键词： red Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks ALD FinFET

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A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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science China(Information sciences) 2020年第6期63卷 253-255页

作者： Gong CHEN Bocheng YU Xiaokang LI Xiaoqiao DONG Xiaoyan XU Zhihong LI Ru HUANG Ming LI Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University Faculty of Information Technology Beijing University of Technology

Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoactive molecules on the semiconductor surface was necessarily adopted to employ their photoelectric characteristics which can be observed in the solution. Porphyrin-based hybrid transistors have emerged as promising candidates for photonic sensing application due to the

关键词： A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Enhanced interband tunneling in two-dimensional tunneling transistors through anisotropic energy dispersion

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Physical Review B 2022年第7期105卷 075413-075413页

作者： Hengze Qu Shiying Guo Wenhan Zhou Zhenhua Wu Jiang Cao Zhi Li Haibo Zeng Shengli Zhang Key Laboratory of Advanced Display Materials and Devices Ministry of Industry and Information Technology College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China School of Electronic and Optical Engineering Nanjing University of Science and Technology Nanjing 210094 China

The unsatisfactory transmission probability in tunneling junction is a major challenge that restricts the performance and scaling of next-generation nanodevices, such as the tunnel field-effect transistors (TFETs). Here, we propose a strategy utilizing anisotropic electronic structures to enhance the inter-band tunneling performance. In the tunneling process, the sharp energy dispersion in transport direction ensures a high transmission eigenvalue, and the weak transverse energy state can broaden the transverse tunneling window, thus strengthening the tunneling probability. Furthermore, our quantum transport simulations demonstrate that in two-dimensional (2D) group VA-VA TFETs, the stronger anisotropic band structures make 2D BiAs and arsenene exhibit high on-state current several times higher than other systems, and the relative larger bandgap of arsenene also gives rise to a steep subthreshold slope below 60 mV/dec. This work provides a physical understanding of the tunneling transport performance, and the anisotropic 2D electronic structures can be regarded as a target feature to design tunneling transistors.

关键词： Electronic structure Quantum transport 2-dimensional systems Phosphorene First-principles calculations

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