检索结果-内蒙古大学图书馆

Interfacial engineering in lead-free tin-based perovskite solar cells

Journal of Energy Chemistry 2021年第6期30卷 147-168,I0005页

作者： Zhenxi Wan Huagui Lai Shengqiang Ren Rui He Yiting Jiang Jincheng Luo Qiyu Chen Xia Hao Ye Wang Jingquan Zhang Lili Wu Dewei Zhao Institute of Solar Energy Materials and Devices College of Materials Science and EngineeringSichuan UniversityChengdu 610065SichuanChina Institute of New Energy and Low-Carbon Technology Sichuan UniversityChengdu 610065SichuanChina Key Laboratory of Material Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052HenanChina

Lead(Pb)-free Tin(Sn)-based perovskite solar cells(PSCs)have been favored by the community due to their low toxicity,preferable bandgaps,and great potential to achieve high power conversion efficiencies(PCEs).Interfaces engineering plays important roles in developing highly efficient Sn-based PSCs via passivation of trap defects,alignment of energy levels,and incorporation of low-dimensional Sn-based *** this review,we summarize the development of Pb-free Sn-based perovskites and their applications in devices,especially the strategies of improving the *** also provide perspectives for future *** aim is to help the development of new and advanced approaches to achieving high-performance environment-friendly Pb-free Sn-based PSCs.

关键词： Tin-based perovskites Perovskite solar cells Interfacial engineering Environment-friendly Energy level alignment

来源：评论

学校读者我要写书评

暂无评论

Gate-defined quantum point contacts in a germanium quantum well

arXiv

引用

arXiv 2024年

作者： Gao, Han Kong, Zhen-Zhen Zhang, Po Luo, Yi Su, Haitian Liu, Xiao-Fei Wang, Gui-Lei Wang, Ji-Yin Xu, H.Q. Beijing Key Laboratory of Quantum Devices Key Laboratory for the Physics and Chemistry of Nanodevices School of Electronics Peking University Beijing100871 China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Beijing Academy of Quantum Information Sciences Beijing100193 China Institute of Condensed Matter and Material Physics School of Physics Peking University Beijing100871 China Hefei National Laboratory University of Science and Technology of China Anhui Hefei230088 China Beijing Superstring Academy of Memory Technology Beijing100176 China

We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2e2/h. Bias-spectroscopy measurements reveal that the energy spacing between successive one-dimensional subbands ranges from 1.5 to 5 meV as a consequence of the small effective mass of the holes and the narrow gate constrictions. At finite magnetic fields perpendicular to the device plane, the edges of the conductance plateaus get splitted due to the Zeeman effect and Landé g factors are estimated to be ∼ 6.6 for the holes in the germanium quantum well. We demonstrate that all quantum point contacts in the same device have comparable performances, indicating a reliable and reproducible device fabrication process. Thus, our work lays a foundation for investigating multiple forefronts of physics in germanium-based quantum devices that require quantum point contacts as a building block. © 2024, CC BY.

关键词： Germanium

来源：评论

学校读者我要写书评

暂无评论

Fast-transient Capacitor-Less LDO in 0.18µm SOI technology

Fast-transient Capacitor-Less LDO in 0.18µm SOI Technology

引用

Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)

作者： Mali Gao Xiaowu Cai Yuexin Gao Ruirui Xia Bo Li Chinese Academy of Sciences Institute of Microelectronics Beijing China University of Chinese Academy of Sciences Beijing China Chinese Academy of Sciences Key Laboratory of Science and Technology on Silicon Devices Beijing China

Based on 0.18µm SOI process, a fast transient capacitor-less is designed. An LDO with 1.6-2.3 voltage input range, 0-100mA load and 1.5V output voltage is designed. The circuit includes a bandgap reference circuit, a folded structure error amplifier, a super-gm source follower, an active capacitor circuit and an output power stage. Simulation results show that the proposed LDO is stable over the full load range, with a worst-case loop gain of 85dB, PM of 87deg, and GBW>100kHz. This design achieves a load regulation of $\boldsymbol{3\mu}\mathbf{V}/\mathbf{mA}$ , a linear regulation of 9mV/V and a PSR of -33dB. The transient simulation results show that the load jumps from 0 to 100mA in $\boldsymbol{1\mu}\mathbf{s}$ , the overshoot voltage is 57mV, the undershoot voltage is 112mV, and the settling time is $< \boldsymbol{1.5\mu} \mathrm{s}$ . The quiescent current is $\boldsymbol{32\mu}\mathbf{A}$ when the LDO is on, and 630nA when the LDO is off. The temperature characteristic of this circuit is 8ppm/°C, and the circuit layout area is 0.063mm 2 .

关键词：

来源：评论

学校读者我要写书评

暂无评论

A 256 Kbit Hf0.5Zr0.5O2-based FeRAM Chip with Scaled Film Thickness (sub-8nm), Low Thermal Budget (350oC), 100% Initial Chip Yield, Low Power Consumption (0.7 pJ/bit at 2V write voltage), and Prominent Endurance (>1012)

A 256 Kbit Hf0.5Zr0.5O2-based FeRAM Chip with Scaled Film Th...

引用

International Electron devices Meeting (IEDM)

作者： Pengfei Jiang Haijun Jiang Yang Yang Lu Tai Wei Wei Tiancheng Gong Yuan Wang Pan Xu Shuxian Lv Boping Wang Jianfeng Gao Junfeng Li Jun Luo Jianguo Yang Qing Luo Ming Liu State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing China Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Zhangjiang Lab Shanghai China School of Information Science and Engineering Shandong University Qingdao China

In this work, we successfully resolve the remanent polarization (P r ) degradation issue, which is caused by the thermal budget decreasing and the film thickness scaling of Hf 0.5 Zr 0.5 O 2 (HZO), and co-integrate the TiN/HZO/TiN capacitors with large initial P r and low operating voltage in the Back-End-of -Line (BEOL) of 130nm CMOS technology to provide a 256 Kbit 1T1C FeRAM chip. Firstly, we prove that the P r degradation is caused by the increasing component of anti-ferroelectric (AFE) phase. Then, utilizing the pre-crystallization engineering and O 3 treatment to the TiN bottom electrode (BE), not only the formation of t-phase is effectively suppressed, but also the required annealing temperature is reduced. The enhancement of ferroelectricity is related to the small thermal expansion of TiO 2 interface layer, which can induce large tensile stress to HZO during the annealing process. Moreover, the oxidization of TiN BE can prevent it absorbing oxygen from HZO, and the reduced oxygen vacancy (Vo) defects can improve both the retention and TDDB characteristics. Based on the above optimizations, the chip demonstrates 100% initial chip yield, >150mV sense margin after 10 12 write cycles, power consumption of 0.7 pJ/bit at 2V write voltage, over 10 12 endurance and 10 years retention.

关键词：

来源：评论

学校读者我要写书评

暂无评论

An Image Encryption Algorithm Based on the Hopfield Neural Network Model with Memristor and its Hardware Implementation

SSRN

引用

SSRN 2024年

作者： Liu, Yi An Hu, Hao Gao, Ya Hu, Shaogang G. Yu, Qi Chen, T.P. Liu, Yang State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing401332 China Nanyang Technological University Singapore639798 Singapore

This paper proposes an innovative approach to image encryption hardware by leveraging the Negative-resistance Memristor-based Hopfield Neural Network (NMHNN) model. In this method, the conventional Hopfield Neural Network (HNN) is modified by substituting one of its synaptic weights with a negative-resistance memristor model. This modification demonstrates enhanced complex dynamics while maintaining a simplified structure. The NMHNN generates a chaotic sequence, which serves as a key for image encryption and decryption through a confusion-diffusion process. As a result, this approach significantly improves the efficiency of both image encryption and decryption processes. To validate the practical feasibility of this memristor-based neural network for encryption, a 3-neuron HNN circuit with one HfO2 memristor is constructed and tested. The hardware experiment demonstrates strong resilience against statistical analysis and entropy attacks. Notably, the operational efficiency of the proposed method is observed to be 23 times greater than that of the Advanced Encryption Standard (AES), highlighting its substantial effectiveness and potential for hardware implementation in the field of image encryption. © 2024, The Authors. All rights reserved.

关键词： Cryptography

来源：评论

学校读者我要写书评

暂无评论

Favorable anion adsorption/desorption of high rate NiSe_(2) nanosheets/hollow mesoporous carbon for battery-supercapacitor hybrid devices

引用

Nano Research 2021年第8期14卷 2574-2583页

作者： Xiaojuan Zhao Houzhao Wan Pei Liang Nengze Wang Cong Wang Yi Gan Xu Chen Qiuyang Tan Xiang Liu Jun Zhang Yi Wang Hanbin Wang Hao Wang Hubei Key Laboratory of Ferro&Piezoelectric Materials and Devices School of Microelectronics and Faculty of Physics and Electronic ScienceHubei UniversityWuhan 430062China College of Optical and Electronic Technology China Jiliang UniversityHangzhou 310018China Max Planck Institute for Solid State Research Heisenbergstr 170569 StuttgartGermany

High-rate battery-type cathode materials have attracted wide attention for advanced battery-supercapacitor hybrid(BSH)***,a core-shell structure of the hollow mesoporous carbon spheres(HMCS)supported NiSe2 nanosheets(HMCS/NiSe2)is constructed through two-step *** HMCS/NiSe_(2)shows a max specific capacity of 1,153.5 C·g^(-1) at the current density of 1 A·g^(-1),and can remain at 774.5 C·g^(-1) even at 40 A·g^(-1)(the retention rate as high as 67.1%)and then the HMCS/NiSe_(2) electrode can keep 80.5%specific capacity after 5,000 cycles at a current density of 10 A·g^(-1).Moreover,the density functional theory(DFT)calculation confirmed that the introduction HMCS into NiSe_(2) made adsorption/desorption of OH-easier,which can achieve higher rate *** HMCS/NiSe_(2)//6 M KOH//HMCS hybrid device has energy density of 47.15 Wh·kg^(-1) and power density of 801.8 W·kg^(-1).This work provides a feasible electrode material with a high rate and its preparation method for high energy density and power density energy storage devices.

关键词： nickel selenide mesoporous carbon supercapacitor high rate core-shell structure

来源：评论

学校读者我要写书评

暂无评论

非平衡压缩实现高灵敏度、线性响应协同的离电压力传感器

引用

science Bulletin 2024年第14期69卷 2221-2230页

作者：杨静李志斌伍莹沈勇张明陈彬袁国江肖松华冯建松张旭唐毓蔚丁孙安陈晓龙王太宏 Department of Electrical and Electronic Engineering Southern University of Science and TechnologyShenzhen 518055China School of Microelectronics Southern University of Science and TechnologyShenzhen 518055China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of EducationChangsha Semiconductor Technology and Application Innovation Research InstituteCollege of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China School of Environmental and Chemical Engineering Yanshan UniversityQinhuangdao 066004China School of Integrated Circuits Nanjing UniversitySuzhou 215163China

Flexible pressure sensors with high sensitivity and linearity are highly desirable for robot sensing and human physiological signal ***,the current strategies for stabilizing axial microstructures(e.g.,micro-pyramids)are mainly susceptible to structural stiffening during compression,thereby limiting the realization of high sensitivity and ***,we report a bending-induced nonequilibrium compression process that effectively enhances the compressibility of microstructures,thereby crucially improving the efficiency of interfacial area growth of electric double layer(EDL).Based on this principle,we fabricate an iontronic flexible pressure sensor with vertical graphene(VG)array ***-high sensitivity(185.09 kPa^(-1))and linearity(R^(2)=0.9999)are realized over a wide pressure range(0.49 Pa–66.67 k Pa).It also exhibits remarkable mechanical stability during compression and *** sensor is successfully employed in a robotic gripping task to recognize the targets of different materials and shapes based on a multilayer perception(MLP)neural *** opens the door to realizing haptic sensing capabilities for robotic hands and prosthetic limbs.

关键词： Artificial mechanoreceptor Pressure sensor Vertical grapheme Ionic nanofiber Object recognition E-skin

来源：评论

学校读者我要写书评

暂无评论

Excitation-dependent perovskite/polymer films for ultraviolet visualization

引用

science Bulletin 2022年第17期67卷 1755-1762页

作者： Junlu Sun Tianshu Li Lin Dong Qilin Hua Shuai Chang Haizheng Zhong Lijun Zhang Chongxin Shan Caofeng Pan CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and SensorBeijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing 100083China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Materials Physics(Ministry of Education) School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450001China State Key Laboratory of Integrated Optoelectronics Key Laboratory of Automobile Materials(Ministry of Education)College of Materials Science and EngineeringJilin UniversityChangchun 130012China MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices School of Materials Science&EngineeringBeijing Institute of TechnologyBeijing 100081China

Ultraviolet(UV)visualization has extensive applications in military and civil fields such as security monitoring,space communication,and wearable equipment for health monitoring in the internet of things(IoT).Due to their remarkable optoelectronic features,perovskite materials are regarded as promising candidates for UV light detecting and ***,we report for the first time the excitationdependent perovskite/polymer films with dynamically tunable fluorescence ranging from green to magenta by changing the UV excitation from 260 to 380 *** they still render dynamic multicolor UV light imaging with different polymer matrixes,halogen ratios,and cations of perovskite *** mechanism of its fluorescence change is related to the chloride vacancies in perovskite materials.A patterned multi-color ultraviolet visualization pad is also demonstrated for visible conversion of the UV *** technique may provide a universal strategy for information securities,UV visualizations,and dynamic multi-color displays in the IoT.

关键词： Excitation-dependent Perovskite/polymer hybrids Chloride vacancy Ultraviolet visualization

来源：评论

学校读者我要写书评

暂无评论

Interface issues of lithium metal anode for high-energy batteries: Challenges, strategies, and perspectives

引用

InfoMat 2021年第2期3卷 155-174页

作者： Yiyao Han Bo Liu Zhen Xiao Wenkui Zhang Xiuli Wang Guoxiang Pan Yang Xia Xinhui Xia Jiangping Tu College of Materials Science and Engineering Zhejiang University of TechnologyHangzhouChina State Key Laboratory of Silicon Materials Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang ProvinceSchool of Materials Science and EngineeringZhejiang UniversityHangzhouChina Institute of Optoelectronic Materials and Devices China Jiliang UniversityHangzhouChina Department of Materials Chemistry Huzhou UniversityHuzhouChina

Lithium(Li)metal is considered as one of the most promising anode materials for next-generation high-energy-density storage ***,the practical application of Li metal anode is hindered by interfacial instability and air instability due to the highly reactivity of Li *** interface in Li metal batteries(LMBs)directly dictates Li dendrite growth,“dead Li”and low Coulombic efficiency,resulting in inferior electrochemical performance of LMBs and even safety *** addition,its sensitivity to ambient air leads to the severe corrosion of Li metal anode,high requirements of production and storage,and increased manufacturing *** of efforts in recent years have overcome many bottlenecks in these fields and hastened the practical applications of high-energy-density *** this review,we focus on emerging methods of these two aspects to fulfill a stable and low cost *** this perspective,design artificial solid electrolyte interphase(SEI)layers,construct three-dimensional conductive current collectors,optimize electrolytes,employ solid-state electrolytes,and modify separators are summarized to be propitious to ameliorate interfacial ***,ex situ/in situ formed protective layers are highlighted in favor of heightening air ***,several possible directions for the future research on advanced Li metal anode are addressed.

关键词： air stability artificial layer interfacial stability Li metal protection lithium metal anode

来源：评论

学校读者我要写书评

暂无评论

Highly Sensitive Humidity Sensor Based on Strontium-Doped Lanthanum Ferrite Nanofibers

SSRN

引用

SSRN 2023年

作者： Zhang, Ziyi Li, Fangxin Zheng, Yangong Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo315211 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Humidity sensors are the most widely applied sensors. Although some highly sensitive humidity sensors have been explored, devices that can accurately detect low humidity are still required. Improving the adsorption of water molecules by surface regulation is an effective way to enhance humidity sensitivity. In this study, electrospinning prepared a series of lanthanum ferrite samples doped with different concentrations of strontium. For the sample with a surface atomic ratio between strontium and lanthanum was approximately 0.2, there was a 6×104 times change in the resistance of the sensor to 90% relative humidity, and the response was 6.76 for 4% relative humidity. Negligible hysteresis, and excellent stability demonstrate the advantages of the strontium-doped lanthanum ferrite nanofibers. The sensing mechanism was discussed by measuring the change of band gap and work function of samples with different concentrations of strontium doping. Furthermore, suitable doping also decreased the adsorption energy and increased the charge transfer during the adsorption of water molecules on the surface of lanthanum ferrite based on the calculations. This study provides a new perspective for enhancing the sensitivity of humidity sensors via surface regulation. © 2023, The Authors. All rights reserved.

关键词： Electrospinning

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：