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SSRN 2023年

作者： Zhang, Ziyi Li, Fangxin Zheng, Yangong Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo315211 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Humidity sensors are the most widely applied sensors. Although some highly sensitive humidity sensors have been explored, devices that can accurately detect low humidity are still required. Improving the adsorption of water molecules by surface regulation is an effective way to enhance humidity sensitivity. In this study, electrospinning prepared a series of lanthanum ferrite samples doped with different concentrations of strontium. For the sample with a surface atomic ratio between strontium and lanthanum was approximately 0.2, there was a 6×104 times change in the resistance of the sensor to 90% relative humidity, and the response was 6.76 for 4% relative humidity. Negligible hysteresis, and excellent stability demonstrate the advantages of the strontium-doped lanthanum ferrite nanofibers. The sensing mechanism was discussed by measuring the change of band gap and work function of samples with different concentrations of strontium doping. Furthermore, suitable doping also decreased the adsorption energy and increased the charge transfer during the adsorption of water molecules on the surface of lanthanum ferrite based on the calculations. This study provides a new perspective for enhancing the sensitivity of humidity sensors via surface regulation. © 2023, The Authors. All rights reserved.

关键词： Electrospinning

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Fabrication of Y-cut LiNbO3 Single Crystalline Film and SAW Resonator on Flexible Polyimide Substrate

Fabrication of Y-cut LiNbO3 Single Crystalline Film and SAW ...

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IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

作者： Yizhuo Gao Wenbo Luo Shitian Huang Wei Fan Dailei Zhu Xu Wang Xinqiang Pan Yao Shuai Chuangui Wu Wanli Zhang School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China Chengdu People’s Republic of China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu People’s Republic of China Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing China

ISBN: (数字)9798331530723

ISBN: (纸本)9798331530730

Flexible surface acoustic wave (SAW) resonators on single crystal LiNbO 3 (LN) film have been successfully fabricated using benzocyclobutene bonding and crystal ion slicing technology. The effects of Polyimide (PI) thickness on the properties of LN film have been studied. 960 nm LN single crystal films without cracks have been transferred to $25 \mu \mathrm{~m}$ PI substrates, which are used to construct flexible SAW resonators. The flexible SAW resonators show well frequency-strain response characteristics. These results demonstrated that LN single crystal film on PI substrate and its SAW resonator is a promising candidate in flexible electronic devices.

关键词： Lithium niobate Surface acoustic waves Resonant frequency Crystals Surface acoustic wave devices Polyimides Thermal sensors Ions Resonators Substrates

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Next-generation machine vision systems incorporating two-dimensional materials: Progress and perspectives

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InfoMat 2022年第1期4卷 23-39页

作者： Peisong Wu Ting He He Zhu Yang Wang Qing Li Zhen Wang Xiao Fu Fang Wang Peng Wang Chongxin Shan Zhiyong Fan Lei Liao Peng Zhou Weida Hu State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaiChina University of Chinese Academy of Sciences BeijingChina Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhouChina State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghaiChina Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and EngineeringZhengzhou UniversityZhengzhouChina Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SARChina School of Physics and Electronics Hunan UniversityChangshaChina

Machine vision systems(MVSs)are an important component of intelligent systems,such as autonomous vehicles and ***,with the continuous increase in data and new application scenarios,new requirements are put forward for the next generation of *** is an urgent need to find new material systems to complement the existing semiconductor technology based on thin-film materials,and new architectures must be explored to improve *** of their unique physical properties,two-dimensional(2D)materials have received extensive attention for use in MVSs,especially in biomimetic ones:the human visual system,which can process complex visual information with low power consumption,provides a model for next-generation *** review paper summarizes the progress and challenges of applying 2D material photodetectors in sense-memory-computational integration and biomimetic image sensors for machine vision.

关键词： in-sensor computing machine vision systems photodetectors two-dimensional materials

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Highly sensitive diamond X-ray detector array for high-temperature applications

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Chip 2024年第3期3卷 43-49页

作者： Wenjie Dou Chaonan Lin Wei Fan Xun Yang Chao Fang Huaping Zang Shaoyi Wang Congxu Zhu Zhi Zheng Weimin Zhou Chongxin Shan Henan Key Laboratory of Diamond Optoelectronic Material and Devices Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Science and Technology on Plasma Physics Laboratory Laser Fusion Research CenterChina Academy of Engineering PhysicsMianyang 621900China Key Laboratory of Micro-Nano Materials for Energy Storage and Conversion of Henan Province College of Chemical and Materials EngineeringXuchang UniversityXuchang 461000China Institute of Quantum Materials and Physics Henan Academy of SciencesZhengzhou450046China

Diamond is a highly suitable material for X-ray detectors that can function effectively in harsh environments due to its unique properties such as ultrawide bandgap,high radiation resistance,excellent carrier mobility as well as remarkable chemical and thermal ***,the sensitivity of diamond X-ray detectors needs further improvement due to the relatively low X-ray absorption efficiency of diamond,and the exploration of singlecrystal diamond array imaging still remains *** the current work,a 10310 X-ray photodetector array was constructed from single-crystal *** improve the sensitivity of the diamond X-ray detector,an asymmetric sandwich electrode structure was ***,trenches were created through laser cutting to prevent crosstalk between adjacent *** diamond X-ray detector array exhibits exceptional performance,including a low detection limit of 4.9 nGy s^(-1),a sensitivity of 14.3 mC Gy^(-1) cm^(-2),and a light-dark current ratio of 18,312,which are among the most favorable values ever reported for diamond X-ray ***,these diamond X-ray detectors can operate at high temperatures up to 450℃,making them suitable for development in harsh environments.

关键词： Diamond X-ray detector array X-ray imaging Sensi-tivity Detection limit

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Memory materials and devices:From concept to application

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InfoMat 2020年第2期2卷 261-290页

作者： Zhenhan Zhang Zongwei Wang Tuo Shi Chong Bi Feng Rao Yimao Cai Qi Liu Huaqiang Wu Peng Zhou State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghaiChina Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijingChina Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijingChina College of Materials Science and Engineering Shenzhen UniversityShenzhenChina Institute of Microelectronics Tsinghua UniversityBeijingChina

Memory cells have always been an important element of information *** emerging technologies like big data and cloud computing,the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory *** is well known,better data storage is mostly achieved by ***,as the size of the memory device is reduced,a series of problems,such as drain gate-induced leakage,greatly hinder the performance of memory *** meet the increasing demands of information technology,novel and high-performance memory is urgently ***,emerging memory technologies are expected to improve memory performance and drive the information *** review will focus on the progress of several emerging memory technologies,including two-dimensional material-based memories,resistance random access memory(RRAM),magnetic random access memory(MRAM),and phasechange random access memory(PCRAM).Advantages,mechanisms,and applications of these diverse memory technologies will be discussed in this review.

关键词： memory MRAM PCRAM RRAM two-dimensional material

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高效稳定钙钛矿太阳能电池中非晶和缺陷表面的重构

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science China Materials 2023年第4期66卷 1323-1331页

作者：谢江生赵生合杭鹏杰陈甜温彬尹奇欣韦世宸朱升财余学功秦敏超路新慧严克友许建斌高平奇 School of Materials Shenzhen Campus of Sun Yat-sen UniversityShenzhen 518107China Institute for Solar Energy Systems Guangdong Provincial Key Laboratory of Photovoltaic TechnologyState Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-sen UniversityGuangzhou 510275China Department of Electronic Engineering The Chinese University of Hong KongHong Kong 999077China State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China School of Environment and Energy State Key Laboratory of Luminescent Materials and Devicesand National Engineering Laboratory for VOCs Pollution Control Technology and EquipmentSouth China University of TechnologyGuangzhou 510006China Department of Physics The Chinese University of Hong KongHong Kong 999077China

钙钛矿太阳能电池的表界面性质是影响器件效率和稳定性的关键性因素.本文中,我们首次发现空穴传输层中的添加剂4-叔丁基吡啶(tBP)可以将钙钛矿非晶态和缺陷表面层进行重结晶,并且钝化晶粒表面的缺陷位点.该重构可使钙钛矿的表面功函数增... 详细信息

钙钛矿太阳能电池的表界面性质是影响器件效率和稳定性的关键性因素.本文中,我们首次发现空穴传输层中的添加剂4-叔丁基吡啶(tBP)可以将钙钛矿非晶态和缺陷表面层进行重结晶,并且钝化晶粒表面的缺陷位点.该重构可使钙钛矿的表面功函数增大,降低了钙钛矿与空穴传输层之间的界面能级失配,提高了器件的光电压.进一步地,我们通过化学键合强度设计,开发了更有效的空穴传输层添加剂4-叔丁基哌啶(tBPp),它比tBP具有与钙钛矿表面缺陷位点更强的相互作用.得益于吸附能的增强,经tBPp重构的钙钛矿表面缺陷态密度降低,且在热、光、湿度的作用下稳定性更好.基于tBPp作为添加剂的钙钛矿电池最高效率达到了24.2%.在氮气气氛中进行最大功率点跟踪测试,未封装的设备在连续光照超过1200小时后几乎可以保持其初始效率.本工作全面揭示了空穴传输层中添加剂对于钙钛矿电池的效率和稳定性的重要性,并提供了系统和基础性理解.

关键词：钙钛矿太阳能电池最大功率点跟踪缺陷态密度空穴传输层键合强度高效稳定叔丁基表面层

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Efficient second-harmonic emission via strong modal overlap in single-resonant lithium niobate nanocavity

arXiv

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arXiv 2025年

作者： Jiang, Zhi Yao, Danyang Gao, Yu Ran, Xu Li, Duomao Zhang, Erqi Wang, Jianguo Gan, Xuetao Zhang, Jinchuan Liu, Fengqi Hao, Yue State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Faculty of Integrated Circuits Xidian University Xi’an710071 China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi’an710129 China Laboratory of Solid-State Optoelectronics Information Technology Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

High-efficiency second-harmonic generation (SHG) in compact integrated photonic systems is crucial for advancing nonlinear optical technologies. However, achieving exceptional conversion efficiencies while maintaining stable performance remains a significant challenge. Here, we report a high-Q single-resonant photonic crystal nanobeam cavity (PCNBC) on a polymer-loaded lithium niobate on insulator (LNOI) platform, which enables bright second-harmonic (SH) emission. Through synergistic optimization of modal confinement and spatial overlap in a y-cut LN architecture, our device achieves a normalized SHG conversion efficiency of 163%/W, outperforming previous LN-based photonic crystal cavities LN-based photonic crystal cavities by over three orders of magnitude. The visible SH emission at 768.77 nm exhibits a single-lobe radiation pattern with precise spectral alignment between fundamental (FH) and second-harmonic (SH) modes, a critical feature for integrated photonic circuits. Remarkably, the conversion efficiency remains stable under thermal variations up to 20°C, addressing a key limitation of multi-resonant systems. High-order cavity modes are directly visualized via CCD imaging, confirming strong spatial overlap. This work establishes a record SHG conversion efficiency for LN microcavities and provides a scalable, temperature-insensitive architecture for nonlinear light sources, with immediate applications in quantum optics and chip-scale interconnects. © 2025, CC BY.

关键词： Quantum optics

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Cavity-enhanced acousto-optic modulators on polymer-loaded lithium niobate integrated platform

arXiv

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arXiv 2024年

作者： Jiang, Zhi Yao, Danyang Ran, Xu Gao, Yu Wang, Jianguo Gan, Xuetao Liu, Yan Hao, Yue Han, Genquan State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Faculty of integrated circuits Xidian University Xi'An710071 China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi'An710129 China Hangzhou Institute of Technology Xidian University Hangzhou311200 China

On chip acousto-optic (AO) modulation represents a significant advancement in the development of highly integrated information processing systems. However, conventional photonic devices face substantial challenges in achieving efficient conversion due to the limited overlap between acoustic waves and optical waves. In this study, we address this limitation by demonstrating an enhanced conversion effect of photonic crystal nanobeam cavities (PCNBCs) in AO modulation on a polymer-loaded lithium niobate integrated platform. Attributed to the high ratio of quality factor (Q) to mode volume (V) and optimal light-sound overlap within the nanocavity, PCNBCs-based AO modulator exhibits a significantly enhanced extinction ratio of 38 dB with a threshold RF power below -50 dBm, which is two orders of magnitude lower than that based on micro-ring resonator (MRRs). In addition, robust digital amplitude shift keying modulations using selected RF and optical channels of the PCNBCs-enhanced AO modulators. These findings validate the compelling properties of the PCNBCs photonic platform, establishing it as a promising candidate for on-chip integrated microwave photonics, optical transceivers, and computing applications. © 2024, CC BY.

关键词： Amplitude shift keying

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Large Magnetoresistance and Perfect Spin-Injection Efficiency in Two-Dimensional Strained VSi2N4-Based Room-Temperature Magnetic-Tunnel-Junction devices

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Physical Review Applied 2023年第1期19卷 014020-014020页

作者： Guohui Zhan Zhilong Yang Kun Luo Shengli Zhang Zhenhua Wu Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 China Key Laboratory of Advanced Display Materials and Devices College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China

Two-dimensional (2D) materials provide a promising platform for exploring spintronic devices. However, the low Curie temperature of most 2D magnetic materials limits their development and application. Based on density-functional theory and the nonequilibrium-Green’s-function formalism, we present a systematic simulation study of room-temperature strained VSi2N4-based magnetic tunnel junctions (MTJs), using a high-accuracy Heyd-Scuseria-Ernzerhof (HSE) functional. In contrast to Perdew-Burke-Ernzerhof results, a spin-conductance match is observed in Ag/VSi2N4-VSi2N4/Ag MTJs at the HSE06 level. Thus, a 1200% tunnel-magnetoresistance (TMR) ratio and a perfect spin-injection efficiency are theoretically predicted in Ag/VSi2N4-VSi2N4/Ag MTJs. Interestingly, the coexistence of a Weyl semimetal and a half-metal state is found in 1.965% tensile-biaxial-strained monolayer VSi2N4. In addition, a slight compressive strain leads to a boost of the TMR ratio by 2 orders of magnitude, up to 105% in strained VSi2N4-based MTJs. Other MTJs based on VSi2P4, VSi2As4, and NbSi2N4 are investigated. Our results show that these spin-polarized magnetic silicide compounds, with Curie temperatures close to room temperature, are promising candidates for next-generation spintronic devices.

关键词： Spin injection Tunneling magnetoresistance Magnetic tunnel junctions Monolayer films Weyl semimetal Density functional calculations Nonequilibrium Green's function Strain engineering

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Comparative Study of TID Irradiation Effect on SiC Planar and Trench MOSFET

Comparative Study of TID Irradiation Effect on SiC Planar an...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Zhen Fu Zhanwei Shen Xuan Tang Yu Huang Jinyi Xu Kaige Huang Quan Zhang Yanning Chen Chao Xiao Kai Huang Shizhong Yue Zhijie Wang Feng Zhang Beijing Smartchip Microelectronics Technology Co. Ltd. Beijing China Laboratory of Solid-State Optoelectronics Information Technology Key Laboratory of Semiconductor Material Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

In this work, the mechanisms of total ionizing dose irradiation (TID) induced charge collections are analyzed and compared between SiC planar and trench gate metal-oxidesemiconductor field effect transistor (DMOSFET and UMOSFET). The threshold shift and the blocking capability of the post-irradiated devices are strongly associated with degradation of the MOS channel regions. Furthermore, SiC UMOSFET with low dose irradiation of $100 \text{Krad}(\text{Si})$ exhibits a higher degree of degradation of electrical characteristics than that of the DMOSFET with irradiation of $300 \operatorname{Krad}(\text{Si})$ . For comparison, the fabricated DMOSFET shows negligible change in gate leakage current and stable blocking capability after $100 \text{Krad}(\text{Si})$ irradiation. Also, the edge-corner topography of gate poly-Si in both of SiC MOSFETs is found to have influence on the formation of latent gate damage induced by TID irradiation. For purpose of deep understanding of these results, the charge interaction on both sides of the gate oxide is clarified by dynamic capacitance comparisons obtained by experimental and numerical methods. SiC UMOSFET with a large portion of the trench surrounded by p-type regions shows greater capacitance shift than the DMOSFET. It is indicated that the ratio of gate/p-type-regions overlap in one cell may have effects on the charge collection of post-irradiated devices. These results will provide meaningful guidance for the design and fabrication of a radiation tolerant SiC MOSFETs.

关键词： Degradation Radiation effects MOSFET silicon carbide Logic gates Surfaces Capacitance Threshold voltage Leakage currents Total ionizing dose

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