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Recent advances in resistive random access memory based on lead halide perovskite

InfoMat 2021年第3期3卷 293-315页

作者： Jiayu Di Jianhui Du Zhenhua Lin Shengzhong(Frank)Liu Jianyong Ouyang Jingjing Chang State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian UniversityXi'anChina Advanced Interdisciplinary Research Center for Flexible Electronics Xidian UniversityXi'anChina Key Laboratory of Applied Surface and Colloid Chemistry Ministry of EducationShaanxi Key Laboratory for Advanced Energy DevicesShaanxi Engineering Lab for Advanced Energy TechnologyInstitute for Advanced Energy MaterialsSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'anChina Department of Materials Science and Engineering National University of SingaporeSingaporeSingapore

Lead halide perovskites have attracted increasing attention in photovoltaic devices,light-emitting diodes,photodetectors,and other fields due to their excellent *** optoelectronic devices,growing numbers of studies have focused on the perovskite-based electrical devices in the past few years,such as transistors and resistive random access memories(RRAMs).Here,this article summarizes the recent progress the researchers have made of RRAM ***,the working mechanism and the key parameters of RRAM are ***,the working principles,including the conductive filament model(containing the types of the model of the metal cationsinduced filament and the model of the ions migration in bulk),the interface effect,and the electronic effect are the origins of the RRAM behaviors,and hence,various factors that affect the device performance are ***,RRAMs based on organolead halide perovskite and all-inorganic perovskite are discussed in terms of different structures,different compositions,and different fabrication ***,a brief conclusion and a broad outlook are given on the progress and challenges in the field of perovskite-based RRAMs.

关键词： all-inorganic perovskites conductive filament models organolead halide perovskites resistive random access memories resistive switching

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双层膦氧化物分子修饰制备高效的大面积纯蓝光钙钛矿量子点发光二极管

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science Bulletin 2023年第20期68卷 2354-2361,M0005页

作者：陈芳刘延亮张丁铄蒋馨祎蔡培庆司俊杰胡乾庆房至善戴兴良宋继中叶志镇何海平 School of Materials Science and Engineering State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province Institute of WenzhouZhejiang UniversityWenzhou 325006China Wenzhou XINXINTAIJING Tech.Co.Ltd. Wenzhou 325006China Materials Interfaces Center Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China College of Optical and Electronic Technology China Jiliang UniversityHangzhou 310018China Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering Taiyuan 030002China School of Physics and Microelectronics Zhengzhou UniversityZhengzhou 450052China

蓝光卤素钙钛矿发光二极管(LED)由于其高色纯度和全色钙钛矿LED发展需求目前受到越来越多的关注.通过钝化卤素钙钛矿中的缺陷来提高LED性能是主要研究方向,然而,用于有效钝化混合卤素蓝光钙钛矿并获得性能优异、光谱稳定的纯蓝光LED方... 详细信息

蓝光卤素钙钛矿发光二极管(LED)由于其高色纯度和全色钙钛矿LED发展需求目前受到越来越多的关注.通过钝化卤素钙钛矿中的缺陷来提高LED性能是主要研究方向,然而,用于有效钝化混合卤素蓝光钙钛矿并获得性能优异、光谱稳定的纯蓝光LED方法还很有限.本文开发了一种使用含有膦氧基团的双层有机分子对混合卤素蓝光钙钛矿量子点进行固相修饰,不仅有效提高了量子点薄膜的发光性能,而且有效改善了LED的电荷平衡,显著提高了器件性能,获得了最大外量子效率为4.87%的纯蓝光LED(469 nm).作者发现双层膦氧分子与量子点之间可以发生强相互作用,从而有效钝化量子点,并有助于获得大面积单层钙钛矿量子点薄膜.其中,发光面积为64 mm2,波长为469 nm的LED最大外量子效率为3.91%.本文所述策略有助于推动性能优异的大面积钙钛矿量子点光电器件开发.

关键词：外量子效率蓝光LED 量子点发光二极管光电器件器件性能电荷平衡钙钛矿强相互作用

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First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors

First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Ba...

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Symposium on VLSI technology

作者： Yuan Qin Congyan Lu Zhaoan Yu Zhihong Yao Feihong Wu Danian Dong Xiaolong Zhao Guangwei Xu Yuhao Zhang Shibing Long Ling Li Ming Liu Key Laboratory of Microelectronics Devices &#x0026 Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Center of Power Electronics Systems Virginia Polytechnic Institute and State University Blacksburg VA USA School of Microelectronics University of Science and Technology of China Hefei China

ISBN: (纸本)9781665497732

We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga 2 O 3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10 -13 A, high on/off ratio of 5×10 8 , and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fW•Hz -1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×10 15 Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 μW/cm 2 . This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications.

关键词： Image sensors Sensitivity Machine vision Monolithic integrated circuits Very large scale integration Photodetectors Thin film transistors

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Integrated plasmonic ruler using terahertz multi-BIC metasurface for digital biosensing

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Moore and More 2025年第1期2卷 67-79页

作者： Qun Ren Sheng Jia Jingtong Li Liu He Yan Xu Hao Huang Xiaoman Wang ZherYian Ooi Yongshan Liang Yaoyin Zhang Hang Xu Zhang Zhang Jianwei You Wei E.I.Sha Jianquan Yao School of Electrical and Information Engineering Tianjin UniversityTianjin 300072China Department of Ultrasound Diagnosis and Treatment Tianjin Medical University Cancer Institute and HospitalTianjin 300072China Key Laboratory of Opto-Electronics Information Technology Ministry of EducationSchool of Precision Instruments and Opto-Electronics EngineeringTianjin UniversityTianjin 300072China Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of MicroelectronicsTianjin UniversityTianjin 300072China School of Electronic and Information Engineering Changshu Institute of TechnologyJiangsu 215000China State Key Laboratory of Millimeter Waves School of Information Science and EngineeringSoutheast UniversityNanjing 210096China Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China

In recent years,continuous bound states in the continuum(BIC)have gained significant attention for their practical applications in optics,chip technology,and modern *** approaches to realizing and analyzing BIC typi-cally rely on magnetic dipole models,which have limitations in quantitative analysis and *** creates a gap in understanding how to efficiently harness BIC with higher Q-factors for enhanced performance in real-world applications,particularly in scenarios involving terahertz imaging and multi-channel *** this study,we introduce a novel approach using a metallic resonator model that leverages toroidal dipole moments to generate symmetry-protected BIC with high *** systematically varying the asymmetry parameters of the metasurface,we gradually break its symmetry,achieving a transition from the BIC mode to the quasi-BIC mode and facilitating the gradual release of stored electromag-netic *** theoretical analysis confirms the existence and generation of BIC,and experimental measurements of the transmission response spectrum validate these theoretical *** results indicate that terahertz metasurface with high Q-factors can produce strong resonances at specific frequencies,enhancing resistance to electromagnetic interference and ensuring stable imaging quality in complex ***,this study suggests the potential for an integrated plasmonic ruler to achieve high-resolution and efficient biological *** findings bridge the gap by demonstrating how high Q-factor BIC can be effectively utilized for multi-channel terahertz dynamic imaging and biosensing *** advancement lays a new foundation for developing robust systems in multi-channel communication and biomedical sensing,offering significant potential for future technological and medical innovations.

关键词： BIC Metasurface Toroidal dipole moment Anti-electromagnetic interference Plasmonic ruler for biosensing

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Coupling of hole double quantum dot in planar germanium to a microwave cavity

arXiv

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arXiv 2023年

作者： Kang, Yuan Li, Zong-Hu Kong, Zhen-Zhen Li, Fang-Ge Hao, Tian-Yue Wei, Ze-Cheng Deng, Song-Yan Wang, Bao-Chuan Li, Hai-Ou Wang, Gui-Lei Guo, Guang-Can Cao, Gang Guo, Guo-Ping CAS Key Laboratory of Quantum Information University of Science and Technology of China Anhui Hefei230026 China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Anhui Hefei230026 China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Institute of Microelectronics University of Chinese Academy of Sciences Beijing100049 China Hefei National Laboratory University of Science and Technology of China Anhui Hefei230088 China Beijing Superstring Academy of Memory Technology Beijing100176 China Origin Quantum Computing Company Limited Anhui Hefei230088 China

In recent years, notable progress has been made in the study of hole qubits in planar germanium, and circuit quantum electrodynamics (circuit QED) has emerged as a promising approach for achieving long-range coupling and scaling up of qubits. Here, we demonstrate the coupling between holes in a planar germanium double quantum dot (DQD) and photons in a microwave cavity. Specifically, a real-time calibrated virtual gate method is developed to characterize this hybrid system, which in turn allows us to determine the typical parameters sequentially through single-parameter fitting instead of conventional multi-parameter fitting with additional uncertainty, and gives the hole-photon coupling rate of ρ0/2π = 21.7 MHz. This work is a step toward further research on hole-photon interactions and long-range qubit coupling in planar germanium. The experimental method developed in this work contributes to the more accurate and efficient characterization of hybrid cavity-QED systems. Copyright © 2023, The Authors. All rights reserved.

关键词： Semiconductor quantum dots

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105× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications 41

105× Endurance Improvement of FE-HZO by an Innovative Rejuv...

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41st Symposium on VLSI technology, VLSI technology 2021

作者： Gong, Tiancheng Tao, Lei Li, Junkang Cheng, Yan Xu, Yannan Wei, Wei Jiang, Pengfei Yuan, Peng Wang, Yuan Chen, Yuting Ding, Yaxin Yang, Yang Wang, Yan Chen, Bing Luo, Qing Chung, Steve S. Du, Shixuan Liu, Ming Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Institute of Physics of Chinese Academy of Sciences Beijing China College of Information Science and Electronic Engineering Zhejiang University Hangzhou China Key Laboratory of Polar Materials and Devices Ministry of Education East China Normal University Shanghai China Department of Electronics Engineering National Chiao Tung University Taiwan

ISBN: (纸本)9784863487802

High operating voltage and low endurance are obstacles for FE HZO to be a viable candidate for NV-DRAM technology. In this work, we provide a breakthrough solution for HZO towards 1z node NV-DRAM application. Firstly, the endurance failure mechanism of HZO film under low-electric field (1014) are quite promising towards 1z node NV-DRAM applications. © 2021 JSAP

关键词： Electric fields

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A Chaos-RC4 Encryption Algorithm based on Memristive Neural Network

A Chaos-RC4 Encryption Algorithm based on Memristive Neural ...

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Electronic technology, Communication and Information (ICETCI), IEEE International Conference on

作者： Yi' an Liu Yili Liu Shuang Liu Guo Li Yang Liu State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing China

ISBN: (数字)9781728181158

ISBN: (纸本)9781665495271

This paper proposes an algorithm based on memristive neural network to realize Rivest Cipher 4 (RC4) encryption, which effectively releases the correlation between the input key and the output key stream of the RC4 algorithm. At the same time, this design improves both key Schedule Algorithm (KSA) and Pseudo Random Generation Algorithm (PRGA) of RC4 stream cipher. In the KSA process, a neural network with chaos is constructed by utilizing the non-linearity characteristics of the memristor, and the generated chaotic sequence having good randomness performance, is used as the input key of the RC4 algorithm to realize “one time one secret” dynamic encryption. In the PRGA process, another sequence generated randomly by memristive neural network is used for a dynamic chaotic permutation on the data table of the S-box. Experiment results demonstrate the effectiveness of the algorithm, and show it has larger key space, higher security and stronger robustness than the traditional algorithm.

关键词： Ciphers Schedules Chaotic communication Heuristic algorithms Neural networks Memristors Resists

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The Synergetic Effects of Total Ionizing Dose and High Temperature on 180 nm DSOI technology

The Synergetic Effects of Total Ionizing Dose and High Tempe...

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IEEE Asia-Pacific Conference on Circuits and Systems

作者： Xu Zhang Fanyu Liu Bo Li Siyuan Chen Yang Huang Jiangjiang Li Jian Jiao Tianchun Ye Jiajun Luo Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Beijing China Technology and Engineering Center for Space Utilization Chinese Academy of Sciences Beijing China

The synergetic effects of high temperature and total ionizing dose effects of H-gate DSOI are investigated under the TG-state bias condition. The comparative irradiation experiments are subjected to identify the synergetic effects by separating pure-temperature and pure-irradiation effects. Furthermore, the mitigated TID responses with/without back-gate compensation are discussed. The results show that synergetic effects make threshold voltage degradation weaken for our devices with the $\boldsymbol{V}_{\text{SO12}}=0\ \mathbf{V}$ during testing. It can be explained that the electrons will be more likely to tunnel into the oxides and compensate the trapped charges with temperature rising. Besides, with the $\boldsymbol{V}_{\text{SO}12}=-\boldsymbol{10}\ \mathrm{V}$ , the common TID mitigation was observed under room temperature and the synergetic effects can still be greatly compensated due to the electric field lines induced by positive trapped charges terminating into the negatively biased electrode. It may enlighten us the high TID tolerance of DSOI can be achieved in very harsh environments.

关键词： Degradation Electron traps Spontaneous emission Radiation hardening (electronics) Tunneling Threshold voltage Total ionizing dose

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Self-Powered, Flexible, and Instantly Dynamic Multi-Color Electroluminescence Device with Bi-Emissive Layers for Optical Communication

SSRN

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SSRN 2023年

作者： Sun, Junlu Liao, Juan Dong, Fuying Chang, Yu Chang, Shulong Mao, Xin Li, Na Li, Xi Wang, Yong Shang, Yuanyuan Wang, Bin Shan, Chong-Xin Dong, Lin Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Materials Physics Ministry of Education School of Physics & Microelectronics Zhengzhou University 450052 China College of General Studies Shanxi Institute of Science and Technology 048000 China Department of Mechanical Engineering City University of Hong Kong China

Self-powered alternating current electroluminescence (ACEL) displays own distinctive preponderance in artificial electronic skins and information communication in the internet of things (IoT). However, their limited color options, i.e., monochrome or static multicolor, hinder their versatility. In this paper, we introduce an instantly dynamic multi-color display system that combines integrated bi-emissive layer ACEL with a dual-cells triboelectric nanogenerator (DC-TENG). Our bi-emissive ACEL device includes ZnS:Cu and ZnS:Mn phosphors blended in polydimethylsiloxane (PDMS) to achieve green and orange emissions, respectively. The DC-TENG consists of a polytetrafluoroetylene (PTFE) film and two copper tapes, generating an open-circuit voltage of ~270 V and a short-circuit current of ~2.5 μA, which is sufficient to power the bi-emissive layer ACEL device. By pressing the DC-TENG cell, the self-powered display system instantly renders green, orange and warm white emissions, making these dynamic multi-color responses useful as information units in the IoT. The self-powered optical communication system is demonstrated by transmitting the word "CHINA". Our study may provide a new approach for developing self-powered multi-color display systems and expands their potential applications in information communication for the IoT. © 2023, The Authors. All rights reserved.

关键词： silicones

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High thermoelectric and mechanical performance in the n-type polycrystalline SnSe incorporated with multi-walled carbon nanotubes

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Journal of Materials science & technology 2022年第19期114卷 55-61页

作者： Xin-Yu Mao Xiao-Lei Shi Liang-Chuang Zhai Wei-Di Liu Yue-Xing Chen Han Gao Meng Li De-Zhuang Wang Hao Wu Zhuang-Hao Zheng Yi-Feng Wang Qingfeng Liu Zhi-Gang Chen State Key Laboratory of Materials-Oriented Chemical Engineering College of Chemical EngineeringNanjing Tech UniversityNanjing 211816China Centre for Future Materials University of Southern QueenslandSpringfield CentralBrisbane4300Australia School of Chemistry and Physics Queensland University of TechnologyBrisbaneQLD 4000Australia Australian Institute for Bioengineering and Nanotechnology The University of QueenslandBrisbaneQLD 4072Australia Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China Key Laboratory of Material Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China School of Mechanical and Mining Engineering The University of QueenslandSt LuciaBrisbaneQLD 4072Australia College of Materials Science and Engineering Nanjing Tech UniversityNanjing 211816China Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites Nanjing Tech UniversityNanjing 211816China CAS Key Laboratory of Carbon Materials Institute of Coal ChemistryChinese Academy of SciencesTaiyuan 030001China

In this study,we introduce multi-walled carbon nanotubes(MWCNTs)in Pb/I co-doped n-type polycrys-tal SnSe to simultaneously improve its thermoelectric and mechanical properties for the first *** introduced MWCNTs act as the“bridges”to accelerate the electron carrier transport between SnSe grains,leading to significantly increased electrical conductivity from 32.6 to 45.7 S cm^(−1) at 773 K,which con-tributes to an enhanced power factor of∼5.0μW cm^(−1) K^(−2) at this *** MWCNTs possess high intrinsic thermal conductivities,these MWCNTs,acting as nanoinclusions in the SnSe matrix to form the dense interfaces between SnSe and MWCNTs,provide extra heat-carrying phonon scattering centers,leading to a slightly reduced lattice thermal conductivity of only 0.34 W m^(−1) K^(−2) at 773 K and in turn,a high ZT of∼1.0 at this ***,the introduced MWCNTs can simultane-ously act as the“binders”to bond adjacent grains,significantly improving the mechanical properties of SnSe by boosting its Vickers hardness from 39.5 to *** work indicates that our facile approach can achieve high thermoelectric and mechanical properties in n-type SnSe polycrystals with a considerable potential for applying to thermoelectric devices as n-type elements.

关键词： Thermoelectric property SnSe N-type Multi-walled carbon nanotubes Mechanical property

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