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International Conference on Solid-State and Integrated Circuit technology

作者： Luping Li Zehong Li Peng Chen Yuzhou Wu Qiansheng Rao Ming Li Haifeng Qin Li Wan Yang Yang Wei Li Min Ren State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China (UESTC) Chengdu China Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing China Shenzhen Institute for Advanced Study UESTC Shenzhen China School of Aeronautics and Astronautics UESTC Chengdu China China Resources Microelectronics (Chongqing) Ltd. Chongqing China Shanghai Super Semiconductor Technology Company Ltd. Shanghai China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

Characteristics of $1200\mathrm{V}$ CS-SemiSJ-IGBT and its pillar thickness influence on key performance are investigated though TCAD simulation in this work. Firstly, $1200\mathrm{V}$ CS-SemiSJ-IGBT with $45 \mu \mathrm{m}$ thick SJ-pillar is illustrated to present performance characteristics and advantage of CS-SemiSJ-IGBT. Secondly, $1200\mathrm{V}$ CS-SemiSJ-IGBTs with different SJ-pillar thickness are investigated to reveal its optimal SJ-pillar thickness. As a conclusion, the $1200\mathrm{V}$ CS-SemiSJ-IGBT with $45 \mu \mathrm{m}$ thick SJ-pillar can provide comparative trade-off as FullSJ-IGBT with the same voltage level.

关键词： Integrated circuit technology Bipolar transistors Switching loss Voltage Switches Logic gates

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Multiscale Structure Boosting Bi-Functional Intelligent Anti-Corrosionand Microwave Absorption Based on Ferromagnetic Absorber

SSRN

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SSRN 2024年

作者： Tian, Wei Feng, Quanyuan Zhang, Linbo Liu, Yifan Jian, Xian Deng, Longjiang Institute of Microelectronics School of Information Science and Technology Southwest Jiaotong University Chengdu611756 China National Engineering Researching Centre of Electromagnetic Radiation Control Materials Key Laboratory of Multi-Spectral Absorbing Materials and Structures Ministry of Education State Key Laboratory of Electronic Thin Films and Integrated Devices School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu611731 China School of Materials and Energy University of Electronic Science and Technology of China Chengdu611731 China University of Electronic Science and Technology of China Huzhou313001 China

Carbonyl iron absorbers (CI) face significant challenges in practical applications, such as corrosion, interface bonding failure, detachment, and high maintenance costs. Herein, we have developed intelligent self-healing technology based on proactive/passive mechanisms via in situ synthesis of self-healing factors (polydopamine/benzotriazole, PDA/BTA) and physical barrier layers (SiO2/1,1,1,3,3,3-hexamethyl disilazane, SiO2/HMDS) to enhance corrosion resistance, while also being compatible with efficient microwave absorption characteristics. The unique multiscale structure gives full play to the utilization of the roles of each functional layer, including the intelligent self-healing features of PDA/BTA, physical shielding and spatial confinement characteristics of SiO2/HMDS, and magnetic-dielectric synergistic mechanism resulted from the good impedance matching characteristics, the conduction loss, the interfacial polarization loss and natural resonance. The as-fabricated composites achieved an exceptional minimum reflection loss value of -55.4 dB at 10.7 GHz and the effective absorption band of 7.6 GHz. Moreover, it still exhibits obvious self-healing and corrosion resistance characteristics after 360 hours corrosion treatment, ascribed to the self-healing mechanism of PDA/BTA and the blocking intervention effect of SiO2/HMDS. This work is considered to pave the way for the synthesis of high-performance magnetic absorbers, especially in enhancing their intelligent self-healing ability in corrosive environments. © 2024, The Authors. All rights reserved.

关键词： Corrosion resistance

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Unconventional ferroelectric domain switching dynamics in CuInP2S6 from first principles

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Physical Review B 2023年第2期108卷 024305-024305页

作者： Ri He Hua Wang Fucai Liu Shi Liu Houfang Liu Zhicheng Zhong Key Laboratory of Magnetic Materials Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China School of Micro-Nano Electronics Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou 310027 China School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 611731 China Yangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou 313001 China Key Laboratory for Quantum Materials of Zhejiang Province Department of Physics School of Science Westlake University Hangzhou 310024 China Institute of Natural Sciences Westlake Institute for Advanced Study Hangzhou 310024 China Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

The switching dynamics of ferroelectric materials is a crucial intrinsic property which directly affects the operation and performance of ferroelectric devices. In conventional ferroelectric materials, the typical ferroelectric switching mechanism is governed by a universal process of domain-wall motion. However, recent experiments indicate that van der Waals ferroelectric CuInP2S6 possesses anomalous polarization switching dynamics under an electric field. It is important to understand the switching dynamics, but it remains theoretically unexplored in CuInP2S6 due to the lack of description of its order-disorder phase transition characteristics by density functional theory. Here we employ a machine-learning potential trained from the first-principles density functional theory dataset to conduct large-scale atomistic simulations of temperature-driven order-disorder ferroelectric phase transition in CuInP2S6. Most importantly, it is found that the electric-field-driven polarization switching in CuInP2S6 is mediated by a single Cu dipole flip rather than a conventional domain-wall-motion mechanism. This intrinsic unconventional switching behavior can be attributed to the competition between the energy barrier of domain-wall motion and single-dipole flip.

关键词： Ferroelectricity 2-dimensional systems Deep learning Density functional theory

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Electronic band reconstruction across the insulator-metal transition in colossally magnetoresistive EuCd2P2

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Physical Review B 2023年第24期108卷 L241115-L241115页

作者： Huali Zhang Feng Du Xiaoying Zheng Shuaishuai Luo Yi Wu Hao Zheng Shengtao Cui Zhe Sun Zhengtai Liu Dawei Shen Michael Smidman Yu Song Ming Shi Zhicheng Zhong Chao Cao Huiqiu Yuan Yang Liu Center for Correlated Matter and School of Physics Zhejiang University Hangzhou 310058 China National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei 230029 China State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics SIMIT Chinese Academy of Science Shanghai 200050 China CAS Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Science Ningbo 315201 China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China State Key Laboratory of Silicon Materials Zhejiang University Hangzhou 310058 China

While colossal magnetoresistance (CMR) in Eu-based compounds is often associated with strong spin-carrier interactions, the underlying reconstruction of the electronic bands is much less understood from spectroscopic experiments. Here using angle-resolved photoemission, we directly observe an electronic band reconstruction across the insulator-metal (and magnetic) transition in the recently discovered CMR compound EuCd2P2. This transition is manifested by a large magnetic band splitting associated with the magnetic order, as well as unusual energy shifts of the valence bands: both the large ordered moment of Eu and carrier localization in the paramagnetic phase are crucial. Our results provide spectroscopic evidence for an electronic structure reconstruction underlying the enormous CMR observed in EuCd2P2, which could be important for understanding Eu-based CMR materials, as well as designing CMR materials based on large-moment rare-earth magnets.

关键词： Colossal magnetoresistance Metal-insulator transition Rare-earth magnetic materials Angle-resolved photoemission spectroscopy

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Enhanced Single-Crystallization of Cu Foils Facilitated by Graphene Growth

SSRN

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SSRN 2024年

作者： Guo, Xiaomeng Qing, Fangzhu Qian, Cheng Zhu, Qinglong Tu, Xiaoming Zhang, Wanli Xu, Ziwei Li, Xuesong Ding, Feng School of Integrated Circuit Science and Engineering Exemplary School of Microelectronics University of Electronic Science and technology of China Chengdu611731 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and technology of China Chengdu611731 China Shenzhen Institute for Advanced Study University of Electronic Science and technology of China Shenzhen518110 China Faculty of Materials Science and Energy Engineering Shenzhen University of Advanced Technology Shenzhen518055 China Institute of Technology for Carbon Neutrality Shenzhen Institute of Advanced Technology Chinese Academy of Science Shenzhen518055 China Jiangsu University China

The production of large-area single-crystal metal foils such as Cu and Ni has recently gained momentum through thermally annealing of commercially available polycrystalline foils. Surface energy plays a pivotal role for grain growth, but is usually insufficient, particularly for adjacent grains with similar surface orientations, causing prolonged annealing time and reproducibility issues. Our method accelerates Cu foil single-crystallization through graphene growth, where graphene coverage on Cu modulates surface energy, enhancing driving forces and accelerating grain growth. This is a critical breakthrough in overcoming the traditional grain growth limitations. We successfully prepare decimeter-sized single-crystal Cu (111) foils with high efficiency and reproducibility and use it for single-crystal graphene growth. Our method paves the way for the scalable production of large-area single-crystal Cu foils, with potential applications extending to other metals, contributing to the ongoing efforts to overcome the challenges associated with traditional single-crystal production methods. © 2024, The Authors. All rights reserved.

关键词： Metal foil

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SemiEpi: Self-driving, Closed-loop Multi-Step Growth of Semiconductor Heterostructures Guided by Machine Learning

arXiv

引用

arXiv 2024年

作者： Shen, Chao Zhan, Wenkang Xin, Kaiyao Pan, Shujie Cheng, Xiaotian Liu, Ruixiang Feng, Zhe Jin, Chaoyuan Cong, Hui Xu, Chi Xu, Bo Ng, Tien Khee Chen, Siming Xue, Chunlai Wang, Zhanguo Zhao, Chao Laboratory of Solid State Optoelectronics Information Technology Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Science Beijing101804 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China HS Photonics Co. Ltd. Xiangjiang Science & Technology Innovation Base Hunan Changsha413000 China College of Information Science and Electronic Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University Hangzhou China Key Laboratory of Optoelectronic Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China Thuwal23955-6900 Saudi Arabia

The semiconductor industry has prioritized automating repetitive tasks through closed-loop, self-driving experimentation, enabling the accelerated optimization of complex multi-step processes. The emergence of machine learning (ML) has ushered in self-driving processes with minimal human intervention. In this work, we introduce SemiEpi, a self-driving platform designed to execute molecular beam epitaxy (MBE) growth of semiconductor heterostructures through multi-step processes, in-situ monitoring, and on-the-fly feedback control. By integrating standard reactor, parameter initialization, and multiple ML models, SemiEpi identifies optimal initial conditions and proposes experiments for multi-step heterostructure growth, eliminating the need for extensive expertise in MBE processes. SemiEpi initializes material growth parameters tailored to specific material characteristics, and fine-tuned control over the growth process is then achieved through ML optimization. We optimize the growth for InAs quantum dots (QDs) heterostructures to showcase the power of SemiEpi, achieving a QD density of 5 ×1010 cm−2, a 1.6-fold increased photoluminescence (PL) intensity and reduced full width at half maximum (FWHM) of 29.13 meV. This work highlights the potential of closed-loop, ML-guided systems to address challenges in multi-step growth. Our method is critical to achieve repeatable materials growth using commercially scalable tools. Furthermore, our strategy facilitates developing a hardware-independent process and enhancing process repeatability and stability, even without exhaustive knowledge of growth parameters. Copyright © 2024, The Authors. All rights reserved.

关键词： Nanocrystals

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Unveiling the Orientation Growth Mechanism and Solar-Blind Response Performance of Β-Ga2o3 (100) Film on Sic Substrate with Aln Buffer Layer

SSRN

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SSRN 2024年

作者： Su, Jie Zhang, Zixin Shi, Liang He, Fuchao Feng, Liping Chang, Jingjing Zhang, Jincheng Hao, Yue State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an710071 China State Key Lab of Solidification Processing School of Materials Science and Engineering Northwestern Polytechnical University Xi’an710072 China Guangzhou Wide Band Gap Semiconductor Innovation Center Guangzhou Institute of Technology Xidian University Guangzhou51055 China Xidian University China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of Graphene China

Optimizing the orientation of β-Ga2O3 has emerged as an effective strategy to design high-performance β-Ga2O3 device, but the orientation growth mechanism and approach have not been revealed yet. Herein, by employing AlN buffer layer, the highly preferred orientation of β-Ga2O3 (100) film rather than (-201) film was realized on 4H-SiC substrate at low sputtering power and temperature. The solar-blind photodetector based on the oriented film exhibited the champion detectivity of 1.22×1012 Jones and photo-to-dark current ratio of 1.11×105, which are the highest among the reported β-Ga2O3 solar-blind photodetector on the SiC substrate. Because the β-Ga2O3 (100) film exhibits the lower nucleation energy than the β-Ga2O3 (-201) film, where a large conversion barrier exists between these two orientation. Moreover, the AlN buffer layer can suppress the surface oxidation of 4H-SiC substrate and eliminate the strain of β-Ga2O3 (100) film, which further reduces the nucleation energy and enlarges the conversion barrier. Meanwhile, the AlN buffer layer can increase the oxygen vacancy formation energy and decrease the oxygen vacancy concentration of β-Ga2O3 (100) film. Our results offer in-depth insights into the preferred orientation growth mechanism, and provide an effective way to design high-quality β-Ga2O3 (100) orientation film and high-performance solar-blind photodetector. © 2024, The Authors. All rights reserved.

关键词： Nucleation

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Temperature-dependent Defect Behaviors in Ferroelectric Hf0.5Zr0.5O2 Thin Film: Re-wakeup Phenomenon and Underlying Mechanisms

Temperature-dependent Defect Behaviors in Ferroelectric Hf0....

引用

International Electron devices Meeting (IEDM)

作者： Xiaopeng Li Jixuan Wu Lu Tai Wei Wei Pengpeng Sang Yang Feng Bo Chen Guoqing Zhao Xuepeng Zhan Xiaolei Wang Masaharu Kobayashi Jiezhi Chen School of Information Science and Engineering Shandong University Qingdao China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Institute of Industrial Science the University of Tokyo Japan

ISBN: (纸本)9781665489607

Aiming at deep insights into the defect behaviors in the ferroelectric HZO thin film, we present a systematical study on the reliability property of $7\mathrm{~nm}$ HZO capacitor at the high-temperature range $(300\sim 420\mathrm{~K})$. For the first time, the rewakeup phenomenon is observed with cycling operation at high temperatures. By characterization on the switching time, fatigue rate, and leakage currents, the underlying defect-related mechanisms are discussed. It is considered that defects at grain boundaries could be an important reason because the trapped positive charge will induce the dipole pinning during the fatigue stage, but stronger electron injection (higher leakage) can release this pinning and cause the re-wakeup phenomenon. Our results strongly indicate that grain boundary engineering could be the key to ultra-thin HZO optimizations.

关键词： Temperature measurement Grain boundaries Temperature distribution Solid modeling Capacitors Fatigue Data models

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Generation of structured light beams with polarization variation along arbitrary spatial trajectories using tri-layer metasurfaces

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Opto-Electronic science 2024年第5期3卷 1-11页

作者： Tong Nan Huan Zhao Jinying Guo Xinke Wang Hao Tian Yan Zhang School of Physics Harbin Institute of TechnologyHarbin 150001China Beijing Key Laboratory of Metamaterials and Devices Key Laboratory of Terahertz OptoelectronicsMinistry of EducationBeijing Advanced Innovation Center for Imaging Theory and TechnologyDepartment of PhysicsCapital Normal UniversityBeijing 100048China Institute of Microelectronics Chinese Academy of Sciences Beijing 100029China Shanghai Institute of Optics and Fine Mechanics Chinese Academy of SciencesShanghai 201800China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Conventionally,the spatially structured light beams produced by metasurfaces primarily highlight the polarization modulation of the beams propagating along the optical axis or the beams'spatial transmission *** particular,along the optical axis,the polarization state is either constant or varies continuously in each output ***,we develop innovative spatially structured light beams with continually changing polarization along any arbitrary spatial transmission *** tri-layer metallic metasurfaces,the geometric characteristics of each layer structure can be adjusted to modulate the phase and polarization state of the incident terahertz(THz)*** beam will converge to the predefined trajectory along several paths to generate a Bessel-like beam with longitudinal polarization *** demonstrate the versatility of the approach by designing two THz-band structured light beams with varying polarization states along the spatial helical transmission *** linear polarization changes and linear polarization to right circular polarization(RCP)and back to linear polarization changes are realized *** experimental results are basically consistent with the simulated *** proposal for arbitrary trajectory structured light beams with longitudinally varying polarization offers a practical method for continuously regulating the characteristics of spatial structured light beams with non-axial *** technique has potential uses in optical encryption,particle manipulation,and biomedical imaging.

关键词： structured light beam tri-layer metallic metasurface longitudinal polarization non-axial transmission

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Perpendicular magnetic anisotropy in as-deposited CoFeB/MgO thin films

arXiv

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arXiv 2022年

作者： Lou, Kaihua Xie, Tunan Zhao, Qianwen Jiang, Baiqing Xia, ChaoChao Zhang, Hanying Yao, Zhihong Bi, Chong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China School of Microelectronics University of Science and Technology of China Hefei230026 China

Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energy-efficient spin-orbitronic devices, is a long-standing challenge. Even for the widely used CoFeB/MgO structures, perpendicular magnetic anisotropy (PMA) can only be established on limited buffer layers through post-annealing above 300 °C. Here, we report that the PMA of CoFeB/MgO films can be established reliably on various buffer layers in the absence of post-annealing. Further results show that precise control of MgO thickness, which determines oxygen diffusion in the underneath CoFeB layer, is the key to obtaining the as-deposited PMA. Interestingly, contrary to previous understanding, post-annealing does not influence the well-established as-deposited PMA significantly but indeed enhances unsaturated PMA with a thick MgO layer by modulating oxygen distributions, rather than crystallinity or Co- and Fe-O bonding. Moreover, our results indicate that oxygen diffusion also plays a critical role in the PMA degradation at high temperature. These results provide a practical approach to build spin-orbitronic devices based on various high-efficient SOT materials. © 2022, CC BY.

关键词： Buffer layers

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