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Low-temperature atomic-level trimming on Ge interfused surface for gate-all-around Si nanosheets transistors

Rare Metals 2024年第12期43卷 6516-6524页

作者： Guan-Qiao Sang Ren-Jie Jiang Yan-Zhao Wei Qing-Kun Li Mei-He Zhang Jia-Xin Yao Yi-Hong Lu Lei Cao Jun-Feng Li Xu-Lei Qin Qing-Zhu Zhang Hua-Xiang Yin Key Laboratory of Microelectronics Devices and Integrated Technology Integrated Circuit Advanced Process Center(ICAC)Institute of MicroelectronicsChinese Academy of SciencesBeijing100029China School of Physics Changchun University of Science and TechnologyChangchun130013China University of Chinese Academy of Sciences Beijing100049China School of Information and Electronics Beijing Institute of TechnologyBeijing100081China

In order to effectively remove the residual Ge atoms at the surface of channel and improve the interfacial characteristic of gate-all-around(GAA)Si nanosheet field effect transistors,a low-temperature atomic-level trimming approach using ammonia peroxide water mixture(APM)solution treatment followed by diluted hydrofluoric acid is proposed and carried *** capacitor samples with SiGe epitaxy layer,similar thermal budget and channel release process were fabricated using advanced high-k/*** 83%reduction in surface roughness at atomic level is obtained by increasing APM treatment ***,there are 99.45% reduction in the interface state density(D_(it))and 96.8%leakage reduction in current density(J_(g))after APM treatment,indicating a promising method for future GAA NSFET performance optimization.

关键词： Gate-all-around Nanosheet Trimming Ammonia peroxide water mixture Low temperature Interface state density

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An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-level Interface Trap

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IEEE Access 2025年 13卷 93481-93490页

作者： Zhang, Tiexin Liu, Fanyu Shu, Lei Chen, Siyuan Wang, Yuchong Wu, Yuchen Wan, Jing Xu, Yong Li, Shi Ding, Yuyang Li, Bo Han, Zhengsheng Ye, Tianchun Institute of Microelectronics of the Chinese Academy of Sciences The Key Laboratory of Science and Technology on Silicon Devices Beijing100029 China The University of Chinese Academy of Sciences Beijing100049 China Fudan University School of Microelectronics Shanghai200433 China Nanjing University of Posts and Telecommunications School of Microelectronics Nanjing210003 China China Institute of Atomic Energy Beijing102413 China National Institute of Metrology Beijing100029 China

In this paper, the threshold voltage (Vth) of Schottky barrier field effect transistors (SBFETs) based on ultra-thin silicon on insulator (SOI) wafer shift induced by electrical test is analyzed. Repeated testing gives rise to a positive shift of the Vth which is similar to the constant voltage stress effect found in two-dimensional material. The series resistance of Source and Drain (Rsd), mobility (μ), and trapped charge are studied. The positive ΔVth is independent of the Rsd and μ, but related to the deep-level acceptor interface trap which is charged during test. The main reason for trap charging is that the Source and Drain contact prepared by metal deposition cannot provide electrons for trap capturing before testing. In order to compensate the ΔVth induced by test, a deep-level trap charging method is proposed. The necessity of this new test method is verified by irradiation experiments. © 2013 IEEE.

关键词： Schottky barrier diodes

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Pressure-triggered stacking dependence of interlayer coupling in bilayer WS_(2)

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science China(Physics,Mechanics & Astronomy) 2024年第8期67卷 177-186页

作者： Zejuan Zhang Chenyin Jiao Shenghai Pei Xilong Zhou Jiaze Qin Wanli Zhang Yu Zhou Zenghui Wang Juan Xia School of Integrated Sciences and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of ChinaChengdu 610054China Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 611731China School of Physics and Electronics Hunan Key Laboratory of Nanophotonics and DevicesCentral South UniversityChangsha 410083China

Tungsten disulfide(WS_(2))has been reported to show negligible stacking dependence under ambient conditions,impeding its further explorations on physical properties and potential ***,we realize efficient modulation of interlayer coupling in bilayer WS_(2)with 3R and 2H stackings by high pressure,and find that the pressure-triggered interlayer coupling and pressure-induced resonant-to-nonresonant transition exhibit prominent stacking dependence,which are experimentally observed for the first time in *** work may unleash the stacking degree of freedom in designing WS_(2)devices with tailored properties correlated to interlayer coupling.

关键词： tungsten disulfide pressure engineering stacking order interlayer coupling

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Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots

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Chinese Physics B 2024年第1期33卷 274-279页

作者：胡睿梓祝圣凯张鑫周圆倪铭马荣龙罗刚孔真真王桂磊曹刚李海欧郭国平 CAS Key Laboratory of Quantum Information University of Science and Technology of ChinaHefei 230026China CAS Center For Excellence in Quantum Information and Quantum Physics University of Science and Technology of ChinaHefei 230026China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Beijing Superstring Academy of Memory Technology Beijing 100176China Origin Quantum Computing Company Limited Hefei 230026China

The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process are sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and readout visibilities along with dark counts, we describe an alternative threshold-independent method for the single-shot readout of spin qubits in semiconductor quantum dots. We can obtain the extrapolated spin state probabilities of the prepared probabilities of the excited spin state through the threshold-independent method. We then analyze the corresponding errors of the method, finding that errors of the extrapolated probabilities cannot be neglected with no constraints on the readout time and threshold voltage. Therefore, by limiting the readout time and threshold voltage, we ensure the accuracy of the extrapolated probability. We then prove that the efficiency and robustness of this method are 60 times larger than those of the most commonly used method. Moreover, we discuss the influence of the electron temperature on the effective area with a fixed external magnetic field and provide a preliminary demonstration for a single-shot readout of up to 0.7K/1.5T in the future.

关键词： quantum computation quantum dot quantum state readout

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Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes

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Chinese Physics B 2023年第8期32卷 404-408页

作者：张涛李若晗苏凯苏华科吕跃广许晟瑞张进成郝跃 Key Laboratory of Wide Band-Gap Semiconductors and Devices School of MicroelectronicsXidian UniversityXi'an 710071China Xi'an Microelectronics Technology Institute Xi'an 710054China School of Aerospace Science and Technology Xidian UniversityXi'an 710071China

Dynamic characteristics of the single-crystal Ga N-passivated lateral AlGaN/GaN Schottky barrier diodes(SBDs)treated with proton irradiation are ***-induced changes including idealized Schottky interface and slightly degraded on-resistance(RON)are observed under 10-Me V proton irradiation at a fluence of 10^(14)cm^(-2).Because of the existing negative polarization charges induced at GaN/AlGaN interface,the dynamic ON-resistance(RON,dyn)shows negligible degradation after a 1000-s-long forward current stress of 50 mA to devices with and without being irradiated by ***,the normalized RON,dynincreases by only 14%that of the initial case after a 100-s-long bias of-600 V has been applied to the irradiated *** high-performance lateral AlGaN/GaN SBDs with tungsten as anode metal and in-situ single-crystal GaN as passivation layer show a great potential application in the harsh radiation environment of space.

关键词： AlGaN/GaN SBDs GaN passivation layer proton irradiation dynamic on-resistance

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Neuromorphic devices, Circuits, and Their Applications in Flexible Electronics

IEEE Journal on Flexible Electronics

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IEEE Journal on Flexible Electronics 2024年第1期3卷 42-56页

作者： Wang, Feiyu Zhang, Tongju Dou, Chunmeng Shi, Yi Pan, Lijia Nanjing University Collaborative Innovation Center of Advanced Microstructures School of Electronic Science and Engineering Nanjing210093 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing100029 China

Artificial intelligence (AI) has rapidly evolved and sparked a heightened interest in the field of bionic electronics. A key focus in this field is to emulate biological neural networks and create perceptually sensitive and adaptable neuromorphic devices. These devices are essential components for the next-generation flexible wearables, smart textiles, biomedical devices, and soft robots. The remarkable advantage of flexible neuromorphic devices lies in their ability to directly perceive, store, and analyze diverse information from the external environment. A notable feature is the integration of multisensory inputs in flexible neuromorphic devices, which enables enhanced adaptability to complex and dynamic scenarios that may occur in reality. This comprehensive review examines the structure and functionality of biological synapses and the prospective designs of neuromorphic devices that emulate synaptic functions. We review recent advances in neuromorphic devices and flexible electronic circuits, including different types of neuromorphic devices, such as two-terminal memristors and three-terminal synaptic transistors. We also compare their advantages and limitations. Finally, we discuss the challenges and opportunities for the future development of flexible neuromorphic devices. This review reveals the great potential of neuromorphic devices, circuits, and their applications in flexible electronics and provides valuable insights into the current state-of-the-art and prospects of this field. © 2022 IEEE.

关键词： Memristors

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CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts

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science China(Information sciences) 2024年第10期67卷 100-114页

作者： Shihao HAN Sishuo LIU Shucheng DU Mingzi LI Zijian YE Xiaoxin XU Yi LI Zhongrui WANG Dashan SHANG Department of Electrical and Electronic Engineering The University of Hong Kong ACCESS-AI Chip Center for Emerging Smart Systems InnoHK Centers Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics Southern University of Science and Technology

Artificial intelligence(AI) has experienced substantial advancements recently, notably with the advent of large-scale language models(LLMs) employing mixture-of-experts(MoE) techniques, exhibiting human-like cognitive skills. As a promising hardware solution for edge MoE implementations, the computing-in-memory(CIM) architecture collocates memory and computing within a single device, significantly reducing the data movement and the associated energy consumption. However, due to diverse edge application scenarios and constraints, determining the optimal network structures for MoE, such as the expert's location,quantity, and dimension on CIM systems remains elusive. To this end, we introduce a software-hardware co-designed neural architecture search(NAS) framework, CIM-based MoE NAS(CMN), focusing on identifying a high-performing MoE structure under specific hardware constraints. The results of the NYUD-v2 dataset segmentation on the RRAM(SRAM) CIM system reveal that CMN can discover optimized MoE configurations under energy, latency, and performance constraints, achieving 29.67×(43.10×) energy savings,175.44×(109.89×) speedup, and 12.24× smaller model size compared to the baseline MoE-enabled Visual Transformer, respectively. This co-design opens up an avenue toward high-performance MoE deployments in edge CIM systems.

关键词： mixture-of-experts computing-in-memory neural architecture search resistive random-access memory static random-access memory

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A multiphysics SET modeling method based on machine learning

A multiphysics SET modeling method based on machine learning

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作者： Xu, Ting Guo, Yanping Chen, Jiaxin Bu, Jianhui Gao, Libo Ni, Tao Li, Bo Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China

With continuous downscaling of transistor sizes, the sensitivity to single event effect (SET) has become one of the most important reliability issues for aerospace integrated circuits. Besides the SET, integrated circuits will be affected by multiphysics such as temperature and voltage when working in space. Currently, the commonly used modeling methods are based on physical mechanisms and the double exponential pulse current. However, both methods are hard to build an accurate SET current model when various variables are considered. In this article, a novel machine learning modeling method of multiphysics SET is proposed, using intelligent algorithms to optimize the network also. With this method, we can obtain a reasonable and accurate multiphysics SET model based on neural network with single hidden layer, and there is no need to consider complex physical mechanisms. The model data is collected from TCAD simulation. Ant colony algorithm was used to optimize the initial values of the network. The RMS (root mean square error) of modeling result is less than 2%. © 2024 John Wiley & Sons Ltd.

关键词： Multiphysics

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Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

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Chinese Physics B 2023年第7期32卷 443-447页

作者：钟傲雪王磊唐蕴杨永涛王进进朱慧平吴真平唐为华李博 State Key Laboratory of Information Photonics and Optical Communications&School of Science Beijing University of Posts and TelecommunicationsBeijing 100876China Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesUniversity of Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China

The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this *** electrical properties of both P-GaN and N-GaN,separated from power devices,were gauged for fundamental *** was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation,as indicated by the Hall and circular transmission line ***,under a 100-Mrad(Si)x-ray dose,the specific contact resistance pc of P-GaN decreased by 30%,and the hole carrier concentration increased ***,the atom displacement damage effect of a 2-MeV proton of 1×10^(13)p/cm^(2)led to a significant degradation of the electrical properties of P-GaN,while those of N-GaN remained unchanged.P-GaN was found to be more sensitive to irradiation than N-GaN thin *** effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.

关键词： x-ray radiation proton radiation GaN circular transmission line model(CTLM)

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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

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Chinese Physics B 2024年第1期33卷 554-562页

作者：冯亚辉郭红霞刘益维欧阳晓平张晋新马武英张凤祁白如雪马晓华郝跃 State Key Laboratory of Wide Bandgap Semiconductor Devices School of MicroelectronicsXidian UniversityXi'an 710071China School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China School of Space Science and Technology Xidian UniversityXi'an 710071China State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation Northwest Institute of Nuclear TechnologyXi'an 710024China

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases ***, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

关键词： silicon–germanium heterojunction bipolar transistor(Si Ge HBT) 100-Me V proton technology computer-aided design(TCAD) single event effect(SEE)

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