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International Electron devices Meeting (IEDM)

作者： Xinhua Wang Xiangjie Xing Xiaolei Yang Xin Yang Yan Chen Guoliang Ma Bixuan Wang Zhifei Zhao Chao Yuan Yun Bai Sen Huang Yipei Lei Jingyuan Shi Fuchao Liu Yuhao Zhang Fenwen Mu Xinyu Liu Sheng Liu Yue Hao HF&HV Device and Integrate Center Institute of Microelectronics Chinese Academy of Science Beijing China State Key Laboratory of WBS Devices and Integrated Technology Nanjing Electronic Devices Institute Nanjing China Center for Power Electronics Systems Virginia Tech Blacksburg VA USA Institute of Technological Sciences Wuhan University Wuhan China TJ Innovative Semiconductor Substrate Technology Co. Ltd. Tianjing China Xidian University Xi'an China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

The SiC substrate cost accounts for >50% of final device cost, and its manufacturing suffers from a high carbon footprint. To address this challenge, this work demonstrates a novel 150 mm single-crystal SiC engineered substrate, which homogeneously integrates a prime-grade SiC layer onto a dummy-grade SiC substrate by surface-active bonding. This engineered substrate reuses low-grade SiC substrates, which are often disposed as wastes in the MOSFET industrial production, as well as recycling the high-grade wafer for over 30 times. It thus can enable a drastic reduction in the substrate cost (by ~40%) and the associated carbon footprint. The engineered substrate demonstrates a defect density as low as prime-grade substrate, a low thermal boundary resistance (TBR) of 2.8 m 2 K/GW, as well as very small electric field at the bonded interface. The TBR is among the lowest reported for the SiC interfaces bonded with SiC, GaN, and $\text{Ga}_{2}\mathrm{O}_{3}$ . The 150 mm, 1200 V-class SiC epi grown on this substrate achieved a high killer-defect-free yield of 99.2%. The 1200 V, 20 $\mathrm{m}\Omega$ SiC MOSFETs fabricated on this 150 mm epi demonstrate a yield over 70% (for $I_{\text{DSS}} < 2\mu A$ . at 1200V), as well as a performance and reliability comparable to the state-of-the-art commercial devices. Circuit robustness tests reveal no degradation of the bonding interface under a >250 A, 10 ms surge current. To the best of our knowledge, this is the first report of the wafer-level device data and high-current robustness for a SiC engineering substrate. These results show the great potential of this new substrate technology to enable more economical and sustainable SiC power electronics.

关键词： MOSFET Costs silicon carbide Thermal resistance Thermal engineering Robustness Bonding Surges Substrates Carbon footprint

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Emerging Internet of Things driven carbon nanotubes-based devices

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Nano Research 2022年第5期15卷 4613-4637页

作者： Shu Zhang Jinbo Pang Yufen Li Feng Yang Thomas Gemming Kai Wang Xiao Wang Songang Peng Xiaoyan Liu Bin Chang Hong Liu Weijia Zhou Gianaurelio Cuniberti Mark HRümmeli Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong Institute for Advanced Interdisciplinary Research(iAIR)University of JinanJinan 250022China Department of Chemistry Guangdong Provincial Key Laboratory of CatalysisSouthern University of Science and TechnologyShenzhen 518055China Leibniz Institute for Solid State and Materials Research Dresden P.O.Box 270116Dresden D-01171Germany State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong University27 Shandanan RoadJinan 250100China School of Electrical Engineering Qingdao UniversityQingdao 266071China Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences 1068 Xueyuan AvenueShenzhen University TownShenzhen 518055China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Chemistry and Chemical Engineering University of JinanJinan 250022China College of Energy Soochow Institute for Energy and Materials InnovationsSoochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Institute of Environmental Technology(CEET) VSB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics D

Carbon nanotubes(CNTs)have attracted great attentions in the field of electronics,sensors,healthcare,and energy *** emerging applications have driven the carbon nanotube research in a rapid ***,the structure control over CNTs has inspired an intensive research vortex due to the high promises in electronic and optical device ***,this in-depth review is anticipated to provide insights into the controllable synthesis and applications of high-quality ***,the general synthesis and post-purification of CNTs are briefly ***,the state-of-the-art electronic device applications are discussed,including field-effect transistors,gas sensors,DNA biosensors,and pressure ***,the optical sensors are delivered based on the *** addition,energy applications of CNTs are discussed such as thermoelectric energy ***,future opportunities are proposed for the Internet of Things(IoT)oriented sensors,data processing,and artificial intelligence.

关键词： carbon nanotubes electronics sensors electronic skins Internet of Things artificial intelligence

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Older and Wiser: The Marriage of Device Aging and Intellectual Property Protection of Deep Neural Networks

arXiv

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arXiv 2024年

作者： Lin, Ning Wang, Shaocong Zhang, Yue He, Yangu Wong, Kwunhang Basu, Arindam Shang, Dashan Chen, Xiaoming Wang, Zhongrui Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Institute of Computing Technology Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Department of Electrical Engineering City University of Hong Kong Hong Kong

Deep neural networks (DNNs), such as the widely-used GPT-3 with billions of parameters, are often kept secret due to high training costs and privacy concerns surrounding the data used to train them. Previous approaches to securing DNNs typically require expensive circuit redesign, resulting in additional overheads such as increased area, energy consumption, and latency. To address these issues, we propose a novel hardware-software co-design approach for DNN intellectual property (IP) protection that capitalizes on the inherent aging characteristics of circuits and a novel differential orientation fine-tuning (DOFT) to ensure effective protection. Hardware-wise, we employ random aging to produce authorized chips. This process circumvents the need for chip redesign, thereby eliminating any additional hardware overhead during the inference procedure of DNNs. Moreover, the authorized chips demonstrate a considerable disparity in DNN inference performance when compared to unauthorized chips. Software-wise, we propose a novel DOFT, which allows pre-trained DNNs to maintain their original accuracy on authorized chips with minimal fine-tuning, while the model’s performance on unauthorized chips is reduced to random guessing. Extensive experiments on various models, including MLP, VGG, ResNet, Mixer, and SwinTransformer, with lightweight binary and practical multi-bit weights demonstrate that the proposed method achieves effective IP protection, with only 10% accuracy on unauthorized chips, while preserving nearly the original accuracy on authorized ones. Copyright © 2024, The Authors. All rights reserved.

关键词： Deep neural networks

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Investigation of Vertically Stacked Horizontal Gate-All-Around SI Nanosheet Ion Sensitive Field Effect Transistor For Detection of C-Reactive Protein

Investigation of Vertically Stacked Horizontal Gate-All-Arou...

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China Semiconductor technology International Conference (CSTIC)

作者： Yang Liu Qingzhu Zhang Junjie Li Cinan Wu Lei Cao Yanna Luo Zhaohao Zhang Shuhua Wei Qianhui Wei Jiaxin Yao Jiawei Hu Meiyan Qin Enxu Liu Yanchu Han LianLian Li YingLu Li Tao Yang Na Zhou Jianfeng Gao Junfeng Li Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China College of Big Data and Information Engineering Guizhou University Guiyang China School of Information Science and Technology North China University of Technology Beijing China State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co. Ltd. Beijing China

In this work, based on advanced gate-all-around (GAA) technology, the extended sensing gate (ESG) GAA Si nanosheet (SiNS) ion sensitive field effect transistor (ISFET) sensor was fabricated and reported for the first time. Due to the GAA structures and the vertically-stacked SiNS channels, the average sensitivity of the ESG GAA SiNS ISFET sensor can be reached 58.8 mV/pH, which provides good gate control and ultra-sensitive detection capabilities. In addition, the actual minimum detection concentration of C-reactive protein (CRP) by ESG GAA SiNS ISFET sensor in 1$\times$ PBS environment is as low as 100pg/mL, which is much lower than the normal concentration of human body.

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Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18µm Process technology

Study on Single Event Burnout Effect for 18V LDMOS Based on ...

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IEEE Asia-Pacific Conference on Circuits and Systems

作者： Langtao Chen Xin Zhou Ying Wang Ying Kong Rubin Xie Ling Peng Yantu Mo Ming Qiao Bo Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China UESTC Guangdong Institute of Electronic and Engineering Dongguan China Beijing Microelectronics Technology Institute Beijing China

In this paper, single event burnout (SEB) effect is investigated for 18V Lateral-diffused MOS (LDMOS) based on 0.18µm process technology. The SEB mechanism is revealed that parasitic bipolar turn-on and the self-maintaining induced by avalanche ionization. At early stage, heavy ion induced ionized holes inject into the P-body (PB) region, giving rise to the parasitic bipolar turn-on. Electrons from the source are allowed to flow to the drain, and exert modulation on electric field profile. Due to field peak formed at drain side, avalanche ionization induced holes provide a supplement for base current of the parasitic bipolar. A positive feedback of holes between the parasitic bipolar and avalanche is responsible for the SEB effect. Multi-implantation radiation hardening technology is proposed to reduce PB region resistance and suppress parasitic bipolar opened, while eliminate the impact on threshold voltage.

关键词： Resistance Kirk field collapse effect Radiation hardening (electronics) Modulation Threshold voltage Impact ionization Transistors

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Experimental and Theoretical Study on failure mechanism of Superjunction MOSFET under H3TRB Testing

Experimental and Theoretical Study on failure mechanism of S...

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International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Tong Zhou Min Ren Xin Zhang Siqi Liang Jianyu Zhou Fang Zheng Rongyao Ma Meng Pi Zehong Li Xinkai Guo Bo Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu P. R. China Guangdong Institute of Electronic Information Engineering University of Electronic Science and Technology of China Guangdong P. R. China China Resources Microelectronics Co. LTD Jiangsu P. R. China

ISBN: (数字)9798350394825

ISBN: (纸本)9798350394832

H3TRB-HVDC test is the appropriate test to prove the robustness of chip against humidity and high electric fields. The failure mechanism of Superjunction MOSFET (SJ-MOS) in H3TRB-HVDC test was studied. By the comparison tests of SJ-MOS with different bias voltage, packaging materials and passivation layers, as well as the comparison tests between SJ-MOS and conventional power MOSFETs (C-MOS) with the same breakdown voltage class, it is found that both high electric field in the termination region, moisture and stress play important roles in the failure. Combined with simulation, a new failure model of H3TRB is proposed.

关键词： Semiconductor device modeling MOSFET Analytical models Surface resistance Moisture Failure analysis Humidity

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Stable Self-Charged Perovskite Quantum Rods for Liquid Laser with Near-Zero Threshold

arXiv

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arXiv 2025年

作者： Li, Jialu Han, Xue Wang, Wenjie Wang, Jinhui Zhang, Tingting Wu, Yuting Zhang, Guofeng Li, Bin Yang, Changgang Guo, Wenli Zhang, Mi Chen, Ruiyun Qin, Chengbing Hu, Jianyong Yang, Zhichun Liu, Shaoding Wang, Yue Gao, Yunan Ma, Jie Xiao, Liantuan Jia, Suotang State Key Laboratory of Quantum Optics Technologies and Devices Institute of Laser Spectroscopy Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan030006 China Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education Taiyuan University of Technology 79 Yingze Street Taiyuan030024 China School of Microelectronics College of Materials Science and Engineering Nanjing University of Science and Technology Nanjing210094 China State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of Physics Peking University Beijing100871 China

Colloidal quantum dots (QDs) are promising optical gain materials that require further threshold reduction to realize their full potential. While QD charging theoretically reduces the threshold to zero, its effectiveness has been limited by strong Auger recombination and unstable charging. Here we theoretically reveal the optimal combination of charging number and Auger recombination to minimize the lasing threshold. Experimentally, we develop stable self-charged perovskite quantum rods (QRs) as an alternative to QDs via state engineering and Mn-doping strategy. An unprecedented two-order-of-magnitude reduction in nonradiative Auger recombination enables QRs to support a sufficient charging number of up to 6. The QR liquid lasing is then achieved with a near-zero threshold of 0.098 using quasi-continuous pumping of nanosecond pulses, which is the lowest threshold among all reported QD lasers. These achievements demonstrate the potential of the specially engineered QRs as an excellent gain media and pave the way for their prospective applications. Copyright © 2025, The Authors. All rights reserved.

关键词： Optical pumping

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Organic solar cells: beyond 20%

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science China Materials 2025年第6期68卷 1689-1701页

作者： Ma, Ruijie Luo, Zhenghui Zhang, Youdi Zhan, Lingling Jia, Tao Cheng, Pei Yan, Cenqi Fan, Qunping Liu, Shengjian Ye, Long Zhang, Guangye Xu, Xiaopeng Gao, Wei Wu, Yue Wu, Jiaying Li, Yuxiang Liu, Yuhang Liu, Feng Song, Jiali Chen, Haiyang Chen, Weijie Zhang, Xin Liu, Yahui Yuan, Jun Liu, Quan Kan, Zhipeng Yin, Hang Li, Xiaojun Ma, Yunlong Deng, Dan Zhu, Lei Huo, Yong Fan, Baobin Fu, Huiting Liao, Xunfan Hu, Hanlin Li, Chao Yu, Runnan Hu, Huawei Yao, Zhaoyang Cai, Yunhao Qian, Deping Cui, Yong Yao, Huifeng Xu, Bowei Kan, Bin Gao, Ke Duan, Chunhui Hu, Xiaotian Sun, Huiliang School of Chemistry and Chemical Engineering Gannan Normal University Ganzhou341000 China Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices The Hong Kong Polytechnic University 999077 Hong Kong Guangdong Provincial Key Laboratory of New Energy Materials Service Safety Shenzhen Key Laboratory of New Information Display and Storage Materials College of Materials Science and Engineering Shenzhen University Shenzhen518060 China Key Laboratory of Advanced Green Functional Materials College of Chemistry Changchun Normal University Changchun130032 China Key Laboratory of Organosilicon Chemistry and Material Technology Ministry of Education Zhejiang Key Laboratory of Organosilicon Material Technology College of Material Chemistry and Chemical Engineering Hangzhou Normal University Hangzhou311121 China School of Optoelectronic Engineering Guangdong Polytechnic Normal University Guangzhou510665 China College of Polymer Science and Engineering National Key Laboratory of Advanced Polymer Materials Sichuan University Chengdu610065 China State Key Laboratory for Mechanical Behavior of Materials Xi’an Jiaotong University Xi’an710049 China Guangzhou510006 China Tianjin University Tianjin300350 China College of New Materials and New Energies Shenzhen Technology University Shenzhen518118 China College of Chemical Engineering Sichuan University Chengdu610065 China Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing Institute of Luminescent Materials and Information Displays College of Materials Science and Engineering Huaqiao University Xiamen361021 China Laboratory of Advanced Optoelectronic Materials College of Chemistry Chemical Engineering and Materials Science Soochow University Suzhou215123 China Guangzhou511400 China School of Materials Science and Engineering Xi’an University of Science and Technology Xi’an710054 China Shanghai200240 China Hangzhou International Innovation Institute Beihang U

Organic solar cells (OSCs) have experienced remarkable performance progress up to 20% benchmark power conversion efficiency (PCE) in past years. Considering the © science China Press 2025.

关键词： Product design

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A DC-DC converter utilizing $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Schottky barrier diode

A DC-DC converter utilizing $\beta-\text{Ga}_{2}\mathrm{O}_{...

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IEEE Electron devices technology and Manufacturing Conference (EDTM)

作者： Wei Guo Guangzhong Jian Feihong Wu Kai Zhou Guangwei Xu Xuanze Zhou Qiming He Xiaolong Zhao Shibing Long School of Microelectronics University of Science and Technology of China Hefei China Key Laboratory of Microelectronics Devices and Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

The β-Ga2O3 Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for β-Ga2O3 Sbd is derived from experimental results and applied to DC-DC converter circuit simulatio... 详细信息

ISBN: (纸本)9781728181769;9781728181776

The β-Ga₂O₃ Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for β-Ga₂O₃ Sbd is derived from experimental results and applied to DC-DC converter circuit simulation. Then the β-Ga₂O₃ SBD is implemented in a DC-DC converter circuit and acquired the conversion efficiency of 94.8%, indicating the great potential of Ga₂O₃-based devices and circuits.

关键词： Schottky diodes Electric potential Circuit simulation Schottky barriers DC-DC power converters Packaging SPICE

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Scaling Potential Analysis for the CMOS Compatible Ox-RRAM

Scaling Potential Analysis for the CMOS Compatible Ox-RRAM

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IEEE International Memory Workshop (IMW)

作者： Xiaoxin Xu Wenxuan Sun Jie Yu Jinru Lai Danian Dong Hangbing Lv Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China School of Microelectronics The University of Science and Technology of China HeFei China

This paper investigated the scalability potential of Ox-RRAM at advance technology nodes by considering the programing voltage, current and stability factors. The voltage mismatch issue become more serious as the technology become advance. High temperature forming scheme and array architecture optimization could alleviate this issue. The tail bit occurs during reading operation and high temperature retention, making the bit-error-rate increase. To ensure the stability of the memory chip, the programming current of the device needs larger than 100 μA, limiting the miniaturization of transistor size. The novel architecture should be designed to solve the tradeoff between reliability and density.

关键词： Electric potential Temperature Scalability Programming Reliability engineering Stability analysis Thermal analysis

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