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Highly Sensitive Humidity Sensor Based on Strontium-Doped Lanthanum Ferrite Nanofibers

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SSRN

SSRN 2022年

作者： Zhang, Ziyi Li, Fangxin Zhang, Yuejun Zheng, Yangong Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo315211 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Humidity sensors are the most widely applied sensors. Although some highly sensitive humidity sensors have been explored, devices that can accurately detect low humidity are still required. Improving the chemisorption of water molecules by surface regulation is an effective way to enhance the humidity sensitivity. In this study, a series of lanthanum ferrite samples doped with different concentrations of strontium was prepared by electrospinning. For the sample with surface atomic ratio between strontium and lanthanum was approximately 0.2, there was a 6´10 4 times change in the resistance of the sensor to 90% relative humidity, and the response was 6.76 for 4% relative humidity. Negligible hysteresis, excellent stability, and linear response demonstrate the advantages of the strontium-doped lanthanum ferrite nanofibers. The sensing mechanism was discussed by measuring the change of band gap and work function of samples with different concentrations of strontium doping. Furthermore, suitable doping also decreased the adsorption energy and increased the charge transfer during the adsorption of water molecules on the surface of lanthanum ferrite based on the calculations. This study provides a new perspective for enhancing the sensitivity of humidity sensors via surface regulation. © 2022, The Authors. All rights reserved.

关键词： Electrospinning

Optimizing Flash Memory Towards Storage-Class Memory (SCM) Applications

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Optimizing Flash Memory Towards Storage-Class Memory (SCM) A...

International Conference on Solid-State and Integrated Circuit technology

作者： Xinyi Guo Yang Feng Jing Liu Junyu Zhang Xuepeng Zhan Jixuan Wu Jiezhi Chen School of Information Science and Engineering Shandong University Qingdao P. R. China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing P. R. China Neumem Co. Ltd Hefei P. R. China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

Aiming at the applications of flash memories as storage-class memory (SCM), we did a comprehensive study on the operation schemes of flash cells for fast Program/Erase (PE) cycling, high endurance and read stabilities. By adopting the channel-hot-electron injection (CHEI) and hot-hole injection (HHI) as PE schemes, as large as $\sim 5\mathrm{V}$ memory window (MW) can be realized and the endurance can reach $\sim 10^{6}$ PE cycles. As for 1-bit operation with sub-1V MW, the speed can be as fast as $\sim 10\text{ns}$ and the endurance is over 10 9 PE cycles. Moreover, with the incremental-step-pulse-program (ISPP) method, 64 states (6-bit/cell) with high linearity and robust stabilities could be obtained. Our results demonstrate that there is a large flexibility to optimize flash cells as SCM, especially for the read-intensive applications and energy-efficient computing-in-memory (CiM) architectures.

关键词： Integrated circuit technology Robust stability Linearity Computer architecture Hot carriers Reliability engineering Circuit stability Flash memories Integrated circuit reliability Optimization

High-responsivity solar-blind photodetector based on MOCVD-grown Si-dopedβ-Ga_(2)O_(3)thin film

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Chinese Physics B 2021年第5期30卷 595-601页

作者： Yu-Song Zhi Wei-Yu Jiang Zeng Liu Yuan-Yuan Liu Xu-Long Chu Jia-Hang Liu Shan Li Zu-Yong Yan Yue-Hui Wang Pei-Gang Li Zhen-Ping Wu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science&State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China China Aerospace System Simulation Technology Co. Ltd.(Beijing)Beijing 100195China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China

Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are *** results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.

关键词： Si-dopedβ-Ga_(2)O_(3) metal-organic chemical vapor deposition(MOCVD) solar-blind high responsivity

Tetragonal polymorph of BaFe2S2O as an antiferromagnetic Mott insulator

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Physical Review Materials 2022年第5期6卷 055002-055002页

作者： Shi-Jie Song Yi-Qiang Lin Bai-Zhuo Li Si-Qi Wu Qin-Qing Zhu Zhi Ren Guang-Han Cao Department of Physics Zhejiang University Hangzhou 310027 China School of Science Westlake Institute for Advanced Study Westlake University Hangzhou 310064 China Zhejiang Province Key Laboratory of Quantum Technology and Devices Interdisciplinary Center for Quantum Information and State Key Lab of Silicon Materials Zhejiang University Hangzhou 310027 China

We report a tetragonal polymorph of BaFe2S2O synthesized under high pressures. This β−BaFe2S2O phase is structurally characterized by two-dimensional Fe2O square nets that are sandwiched by sulfur atomic layers. The electrical, magnetic, and thermodynamic measurements indicate that it is an antiferromagnetic insulator with a Néel temperature of 121 K. A successive magnetic transition at ∼40K is observed, possibly associated with spin canting due to Dzyaloshinskii-Moriya interactions. Density functional theory based calculations reveal Mott localization driven by the on-site electron-electron Coulomb repulsion. The calculations also suggest a noncollinear Fe2+-spin structure with two-k [k1=(1/2,0,1/2) and k2=(0,1/2,1/2)] propagation vectors, primarily due to the magnetocrystalline anisotropy as well as the next-nearest-neighbor superexchange interactions mediated by oxygen and sulfur anions, respectively.

关键词： First-principles calculations Magnetic order Magnetic phase transitions Structural properties Antiferromagnets Chalcogenides Mott insulators Chemical synthesis

Quantum transport for the gate-length scaling limit of Si nanowire field-effect transistors based on calibrated k⋅p Hamiltonian parameters

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Physical Review Applied 2025年第3期23卷 034049-034049页

作者： Guohui Zhan Tongshuai Zhu Jiaxin Yao Kun Luo Huaixiang Yin Shengli Zhang Zhenhua Wu Center for Quantum Matter School of Physics Zhejiang University Hangzhou 310058 Zhejiang China University of Chinese Academy of Sciences 100049 Beijing China Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China College of Science China University of Petroleum (East China) Qingdao 266580 Shandong China School of Materials Science and Engineering China University of Petroleum (East China) Qingdao 266580 Shandong China Key Laboratory of Advanced Display Materials and Devices College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 Jiangsu China

We present a comprehensive investigation of quantum transport in silicon nanowire field-effect transistors (SiNWFETs) at the scaling limit. The Si bulk k⋅p Hamiltonian parameters are rendered invalid at smaller scales due to pronounced quantum confinement effects. Consequently, nanowire k⋅p Hamiltonian parameters are meticulously calibrated with the use of first-principles HSE06 band structures through the fast least-squares method. On the basis of the nonequilibrium Green’s function formalism, we then systematically analyze the performance limits of gate-all-around SiNWFETs under various gate lengths. With diminishing gate lengths, quantum tunneling from source to drain intensifies, leading to a degradation in subthreshold swing. Our findings reveal that the gate-length scaling limit for n-type devices is numerically larger than for p-type devices, and distinct gate scaling limits are elucidated for various cross-section sizes; for instance, the ultimate scaling limit of Si nanowires of 4×4nm2 cross section is approximately 10 nm.

关键词： Nanowires

High-Pressure Tuning of Electrical Transport in Freestanding Oxide Films

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arXiv 2025年

作者： Chen, Jingxin Huang, Xiang Qiao, Zhihan Li, Jiao Xu, Jiahao Zhang, Haiyang Li, Deyang Men, Enyang Wang, Hangtian Zhang, Han Xie, Jianyu Zheng, Guolin Tian, Mingliang Niu, Qun Hao, Lin Anhui Provincial Key Laboratory of Low-Energy Quantum Materials and Devices High Magnetic Field Laboratory HFIPS Chinese Academy of Sciences Anhui Hefei230031 China Science Island Branch of Graduate School University of Science and Technology of China Hefei230026 China School of Microelectronics and Control Engineering Changzhou University Jiangsu Changzhou213001 China Spin-X Institute School of Chemistry and Chemical Engineering South China University of Technology Guangdong511442 China

Electrical transport of oxide films under high pressure is largely unexplored due to the absence of a universal strategy. In this work, we have developed an in-house route to investigate the electrical transport properties of oxide films under high pressures, by improving the elasticity of freestanding oxide films and the robustness of high-pressure techniques on nano-devices. As a showcase, we investigated the electrical resistivity of perovskite SrIrO3 films under high pressures, and found a pressure-driven semimetal-to-insulator transition and an insulator-to-metal transition. At the monolayer-limit, the SrIrO3 films directly transform from an insulating state to a metallic state, highlighting the intriguing interplay of dimensionality and hydrostatic pressure in correlated oxides, which can be unveiled through the universal high-pressure strategy. © 2025, CC BY.

关键词： Perovskite

Topology Optimization of Random Memristors for Input-Aware Dynamic SNN

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arXiv 2024年

作者： Wang, Bo Wang, Shaocong Lin, Ning Li, Yi Yu, Yifei Zhang, Yue Yang, Jichang Wu, Xiaoshan He, Yangu Wang, Songqi Chen, Rui Li, Guoqi Qi, Xiaojuan Wang, Zhongrui Shang, Dashan Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Key Laboratory of Brain Cognition and Brain-inspired Intelligence Technology Institute of Automation Chinese Academy of Sciences Beijing100190 China University of Chinese Academy of Sciences Beijing100049 China

There is unprecedented development in machine learning, exemplified by recent large language models (GPT4) and world simulators (SORA), which are artificial neural networks (ANNs) running on digital computers. However, they still cannot parallel human brains in terms of energy efficiency and the streamlined adaptability to inputs of different difficulties, due to differences in signal representation, optimization, run-time reconfigurability, and hardware architecture. To address these fundamental challenges, we introduce pruning optimization for input-aware dynamic memristive spiking neural network (PRIME). Signal representation-wise, PRIME employs leaky integrate-and-fire neurons to emulate the brain’s inherent spiking mechanism. Drawing inspiration from the brain’s structural plasticity, PRIME optimizes the topology of a random memristive SNN, without expensive memristor conductance fine-tuning. For runtime reconfigurability, inspired by the brain’s dynamic adjustment of computational depth, PRIME employs an input-aware dynamic early stop policy to minimize latency during inference, thereby boosting energy efficiency without compromising performance. Architecture-wise, PRIME leverages memristive in-memory computing, mirroring the brain and mitigating the von Neumann bottleneck. We validated our system using a 40 nm 256 Kb memristor-based in-memory computing macro on neuromorphic image classification and image inpainting. Our results demonstrate the classification accuracy and Inception Score (IS) are comparable to the software baseline, while achieving 37.83× and 62.50× improvements in energy efficiency. Furthermore, we attained 77.0% and 12.5% computational load savings with minimal reduction in performance. The system also exhibits robustness against stochastic synaptic noise of analogue memristors. Our software-hardware co-designed model paves the way to future brain-inspired neuromorphic computing of brain-like energy efficiency and adaptivity. Copyright © 202

关键词： Memristors

Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication

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arXiv 2024年

作者： Li, Manyang Duan, Jianan Jin, Zhiyong Pan, Shujie Zhan, Wenkang Chen, Jinpeng Yu, Jinling Cheng, Xiaotian Ni, Zhibo Jin, Chaoyuan Ng, Tien Khee Kong, Jinxia Xu, Xiaochuan Yao, Yong Xu, Bo Chen, Siming Wang, Zhanguo Zhao, Chao Laboratory of Solid State Optoelectronics Information Technology Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing101804 China National Key Laboratory of Laser Spatial Information Guangdong Provincial Key Laboratory of Integrated Photonic-Electronic Chip School of Integrated Circuits Harbin Institute of Technology Shenzhen518055 China HS Photonics Co. Ltd. Xiangjiang Science & Technology Innovation Base Hunan Changsha413000 China Institute of Micro/Nano Devices and Solar Cells School of Physics and Information Engineering Fuzhou University Fuzhou350108 China College of Information Science and Electronic Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University Hangzhou China Thuwal23955-6900 Saudi Arabia

Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers because of their superior carrier confinement and smaller active regions. However, the multifaceted nature of radiation effects on QDs resulted in ongoing controversies. Comprehensive testing under simulated space conditions is also necessary to validate their performance. In this work, we conduct radiation tests on various In(Ga)As/GaAs QD and quantum well (QW) materials and devices. Our results reveal that InAs/GaAs QDs with filling factors greater than 50% exhibit greater radiation hardness than those below 50%. Furthermore, most InAs/GaAs QDs show superior radiation resistance compared to InGaAs/GaAs QW when exposed to low proton fluences of 1 × 1011 and 1 × 1012 cm-2, resulting from radiation-induced defects. The linewidth enhancement factor (LEF) of well-designed QD lasers remains remarkably stable and close to zero, even under proton irradiation at a maximum fluence of 7×1013 cm-2, owing to their inherent insensitivity to irradiation-induced defects. These QD lasers demonstrate an exceptional average relative intensity noise (RIN) level of -162 dB/Hz, with only a 1 dB/Hz increase in RIN observed at the highest fluence, indicating outstanding stability. Furthermore, the lasers exhibit remarkable robustness against optical feedback, sustaining stable performance even under a feedback strength as high as -3.1 dB. These results highlight the significant potential of QD lasers for space laser communication applications, where high reliability and resilience to radiation and environmental perturbations are critical. Copyright © 2024, The Authors. All rights reserved.

关键词： Quantum dot lasers

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

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arXiv 2024年

作者： He, Zhen-Xuan Zhou, Ji-Yang Lin, Wu-Xi Li, Qiang Liang, Rui-Jian Wang, Jun-Feng Wen, Xiao-Lei Hao, Zhi-He Liu, Wei Ren, Shuo Li, Hao You, Li-Xing Tang, Jian-Shun Xu, Jin-Shi Li, Chuan-Feng Guo, Guang-Can CAS Key Laboratory of Quantum Information University of Science and Technology of China Anhui Hefei230026 China CAS Center For Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Anhui Hefei230026 China Hefei National Laboratory University of Science and Technology of China Anhui Hefei230088 China Institute of Advanced Semiconductors and Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang Hangzhou311200 China State Key Laboratory of Silicon Materials and Advanced Semiconductors School of Materials Science and Engineering Zhejiang University Hangzhou310027 China College of Physics Sichuan University Sichuan Chengdu610065 China Center for Micro and Nanoscale Research and Fabrication University of Science and Technology of China Anhui Hefei230026 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China

Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during optical manipulation frequently causes fluctuations in the charge state and performance of these defects, thereby restricting the effectiveness of spin-photon interfaces. Recent predictions indicate that divacancy defects near stacking faults possess the capability to stabilize their neutral charge states, thereby providing robustness against photoionization effects. In this work, we present a comprehensive protocol for the scalable and targeted fabrication of single divacancy arrays in 4H-SiC using a high-resolution focused helium ion beam. Through photoluminescence emission (PLE) experiments, we demonstrate long-term emission stability with minimal linewidth shift (∼ 50 MHz over 3 hours) for the single c-axis divacancies within stacking faults. By measuring the ionization rate for different polytypes of divacancies, we found that the divacancies within stacking faults are more robust against resonant excitation. Additionally, angle-resolved PLE spectra reveal their two resonant-transition lines with mutually orthogonal polarizations. Notably, the PLE linewidths are approximately 7 times narrower and the spin-coherent times are 6 times longer compared to divacancies generated via carbon-ion implantation. These findings highlight the immense potential of SiC divacancies for on-chip quantum photonics and the construction of efficient spin-to-photon interfaces, indicating a significant step forward in the development of quantum technologies. © 2024, CC BY.

关键词： silicon carbide