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International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Zhao Qi Ming Qiao Jingqi Wei Yonggang Shi Hongquan Chen Zhaoji Li Bo Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu P.R. China UESTC Chongqing Institute of Microelectronics Industry Technology Chongqing P.R. China Institute of Electronic and Information Engineering of UESTC in Guangdong Dongguan P.R. China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen China

Transient voltage suppressor (TVS) is a kind of widely-used protection device which can enhance system surge and electrostatic discharge (ESD) robustness in small PCB area. However, different TVS cannot be fabricated using same technology due to the huge characteristic difference, which brings technology complexity in multifunctional system. In order to unity the TVS designs, a novel multifunctional TVS technology which solves non-uniformity finger triggering, voltage stacking and low leakage modular assembly issues is proposed. By using this TVS technology, the low-capacitance TVS array gets the peak current $(I_{\text{PP}})$ of 5 A under the line-line capacitance $(C_{\mathrm{L}-\mathrm{L}})$ of 0.25 pF, 5 V power clamp gets the $I_{\text{PP}}$ of 10 A with the dynamic resistance $(R_{\text{dyn}})$ of 0.15 Ohm, high-voltage protection diode gets the breakdown voltage (BV) of 70 V by stacking eight units and the surge TVS realizes $I_{\text{PP}}$ of 320 A by increasing finger amount without non-uniformity triggering.

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Highly efficient nonuniform finite difference method for three-dimensional electrically stimulated liquid crystal photonic devices

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Photonics Research 2024年第4期12卷 865-875页

作者： ZHENGHAO GUO MENGJUN LIU ZIJIA CHEN RUIZHI YANG PEIYUN LI HAIXIA DA DONG YUAN GUOFU ZHOU LINGLING SHUI HUAPENG YE Guangdong Provincial Key Laboratory of Optical Information Materials and Technology&Institute of Electronic Paper Displays South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China SCNU-TUE Joint Lab of Device Integrated Responsive Materials(DIRM) National Center for International Research on Green OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices School of Information and Optoelectronic Science and EngineeringSouth China Normal UniversityGuangzhou 510006China Joint Laboratory of Optofluidic Technology and Systems National Center for International Research on Green OptoelectronicsSouth China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province Nanjing 210023China

Liquid crystal(LC)photonic devices have attracted intensive attention in recent decades,due to the merits of tunability,cost-effectiveness,and high ***,the precise and efficient simulation of large-scale three-dimensional electrically stimulated LC photonic devices remains challenging and resource *** we report a straightforward nonuniform finite difference method(NFDM)for efficiently simulating largescale LC photonic devices by employing a spatially nonuniform mesh grid.

关键词： nonuniform crystal finite

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Nitrogen Decoration of Basal-Plane Dislocations in 4H-SiC

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Physical Review Applied 2022年第5期17卷 054011-054011页

作者： Jiajun Li Hao Luo Guang Yang Yiqiang Zhang Xiaodong Pi Deren Yang Rong Wang State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China Institute of Advanced Semiconductors and Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices Hangzhou Innovation Center Zhejiang University Hangzhou 311200 China Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of Physics Zhejiang Sci-Tech University Hangzhou 310018 China School of Materials Science and Engineering and Henan Institute of Advanced Technology Zhengzhou University Zhengzhou Henan 450001 China

Basal-plane dislocations (BPDs) pose a great challenge to the reliability of bipolar power devices based on the 4H silicon carbide (4H-SiC). It is well established that heavy nitrogen (N) doping promotes the conversion of BPDs to threading edge dislocations (TEDs) and improves the reliability of 4H-SiC-based bipolar power devices. However, the interaction between N and BPDs, and the effect of N on the electronic properties of BPDs are still ambiguous, which significantly hinder the understanding on the electron-transport mechanism of 4H-SiC−based bipolar power devices. Combining molten-alkali etching and the Kelvin probe force microscopy (KPFM) analysis, we demonstrate that BPDs create acceptorlike states in undoped 4H-SiC, while acting as donors in N-doped 4H-SiC. First-principles calculations verify that BPDs create occupied defect states above the valence band maximum (VBM) and unoccupied defect states under the conduction-band minimum (CBM) of undoped 4H-SiC. The electron transfer from the defect states of intrinsic defects and native impurities to the unoccupied defect states of BPDs gives rise to the acceptorlike behavior of BPDs in undoped 4H-SiC. Defect formation energies indicate that N atoms can spontaneously decorate BPDs during the N doping of 4H-SiC. The binding between N and BPD is strong against decomposition. The accumulation of N dopants at the core of BPDs results in the accumulation of donorlike states at the core of BPDs in N-doped 4H-SiC. This work not only enriches the understanding on the electronic behavior of BPDs in N-doped 4H-SiC, but also helps understand the electron transport mechanism of 4H-SiC-based bipolar power devices.

关键词： Disclinations & dislocations Dopants Carbides Semiconductor compounds Wide band gap systems Atomic force microscopy Density functional theory Sample preparation

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Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

arXiv

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arXiv 2023年

作者： Luo, Kun Gan, Weizhuo Hou, Zhaozhao Zhan, Guohui Xu, Lijun Liu, Jiangtao Lu, Ye Wu, Zhenhua Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China HiSilicon Technologies Shenzhen China College of Mechanical and Electrical Engineering Guizhou Minzu University Guiyang550025 China The School of Information Science and Technology Fudan University Shanghai200433 China

Recently, cold source transistor (CSFET) with steep-slope subthreshold swing (SS) 2 and CoSi2). The dependence of the thermalization factor, relaxation time, scattering time and scattering rate on energy level are obtained. The thermalization of carrier gradually increases from low energy to high energy. Partially thermalization from the ground state to reach the thermionic current window is realized with sub-100 fs time scale. Fully thermalization to entail energy region depends on the barrier height sensitively, i.e., the scattering rate decreases exponentially as the energy of the out-scattering state increase. The scattering rate of NiSi2 and CoSi2 is 2 orders of magnitude higher than that of Si, arising from their higher density of states than that in silicon This study can shed light on the material design for low power tunneling FET as well as the emerging CSFET. Copyright © 2023, The Authors. All rights reserved.

关键词： Silicides

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Continuous-Time Digital Twin with Analogue Memristive Neural Ordinary Differential Equation Solver

arXiv

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arXiv 2024年

作者： Chen, Hegan Yang, Jichang Chen, Jia Wang, Songqi Wang, Shaocong Wang, Dingchen Tian, Xinyu Yu, Yifei Chen, Xi Lin, Yinan He, Yangu Wu, Xiaoshan Li, Yi Zhang, Xinyuan Lin, Ning Xu, Meng Li, Yi Zhang, Xumeng Wang, Zhongrui Wang, Han Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Institute of the Mind The University of Hong Kong Hong Kong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan430074 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong

Digital twins, the cornerstone of Industry 4.0, replicate real-world entities through computer models, revolutionising fields such as manufacturing management and industrial automation. Recent advances in machine learning provide data-driven methods for developing digital twins using discrete-time data and finite-depth models on digital computers. However, this approach fails to capture the underlying continuous dynamics and struggles with modelling complex system behaviour. Additionally, the architecture of digital computers, with separate storage and processing units, necessitates frequent data transfers and Analogue-Digital (A/D) conversion, thereby significantly increasing both time and energy costs. Here, we introduce a memristive neural ordinary differential equation (ODE) solver for digital twins, which is capable of capturing continuous-time dynamics and facilitates the modelling of complex systems using an infinite-depth model. By integrating storage and computation within analogue memristor arrays, we circumvent the von Neumann bottleneck, thus enhancing both speed and energy efficiency. We experimentally validate our approach by developing a digital twin of the HP memristor, which accurately extrapolates its nonlinear dynamics, achieving a 4.2-fold projected speedup and a 41.4-fold projected decrease in energy consumption compared to state-of-the-art digital hardware, while maintaining an acceptable error margin. Additionally, we demonstrate scalability through experimentally grounded simulations of Lorenz96 dynamics, exhibiting projected performance improvements of 12.6-fold in speed and 189.7-fold in energy efficiency relative to traditional digital approaches. By harnessing the capabilities of fully analogue computing, our breakthrough accelerates the development of digital twins, offering an efficient and rapid solution to meet the demands of Industry 4.0. © 2024, CC BY-NC-SA.

关键词： Energy utilization

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Circularly polarized luminescence from organic micro-/nano-structures

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Light(science & Applications) 2021年第5期10卷 749-766页

作者： Yonging Deng Mengzhu Wang Yanling Zhuang Shujuan Liu Wei Huang Qiang Zhao State Key Laboratory of Organic Electronics and Information Displays&Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials(IAM)&Institute of Flexible Electronics(Future Technology)Nanjing University of Posts&Telecommunications(NUPT)9 Wenyuan Road210023NanjingJiangsuChina Frontiers Science Center for Flexible Electronics(FSCFE) MIIT Key Laboratory of Flexible Electronics(KLoFE)Northwestern Polytechnical University(NPU)127 West Youyi Road710072Xi’anShaanxiChina College of Electronic and Optical Engineering&College of Microelectronics Jiangsu Province Engineering Research Center for Fabrication and Application of Special Optical Fiber Materials and DevicesNanjing University of Posts and Telecommunications(NUPT)9 Wenyuan Road210023NanjingJiangsuChina

Circularly polarized light exhibits promising applications in future displays and photonic *** polarized luminescence(CPL)from chiral luminophores is an ideal approach to directly generating circularly polarized light,in which the energy loss induced by the circularly polarized filters can be *** various chiral luminophores,organic micro-/nano-structures have attracted increasing attention owing to the high quantum efficiency and luminescence dissymmetry ***,the recent progress of CPL from organic micro-/nano-structures is ***,the design principles of CPL-active organic micro-/nano-structures are expounded from the construction of micro-/nano-structure and the introduction of *** on these design principles,several typical organic micro-/nano-structures with CPL activity are introduced in detail,including self-assembly of small molecules,self-assembly ofπ-conjugated polymers,and self-assembly on micro-/nanoscale ***,we discuss the external stimuli that can regulate CPL performance,including solvents,pH value,metal ions,mechanical force,and *** also summarize the applications of CPL-active materials in organic light-emitting diodes,optical information processing,and chemical and biological ***,the current challenges and prospects in this emerging field are *** is expected that this review will provide a guide for the design of excellent CPL-active materials.

关键词： temperature. materials. polarized

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Stoichiometric effect on electrical and near-infrared photodetection properties of full-composition-range GaAs1−xSbx nanowires

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Nano Research 2021年第11期14卷 3961-3968页

作者： Jiamin Sun Mingming Han Meng Peng Lei Zhang Dong Liu Chengcheng Miao Jiafu Ye Zhiyong Pang Longbing He Hailu Wang Qing Li Peng Wang Lin Wang Xiaoshuang Chen Chongxin Shan Litao Sun Weida Hu Zai-xing Yang School of Physics and School of Microelectronics Shandong UniversityJinan250100China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan430074China SEU-FEI Nano-Pico Center Key Lab of MEMS of Ministry of EducationCollaborative Innovation Center for Micro/Nano FabricationDevice and SystemSoutheast UniversityNanjing210096China School of Physics and Photoelectric Engineering Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and EngineeringZhengzhou UniversityZhengzhou450001China

As one of the most important narrow bandgap ternary semiconductors, GaAs1−xSbx nanowires (NWs) have attracted extensive attention recently, due to the superior hole mobility and the tunable bandgap, which covers the whole near-infrared (NIR) region, for technological applications in next-generation high-performance electronics and NIR photodetection. However, it is still a challenge to the synthesis of high-quality GaAs1−xSbx NWs across the entire range of composition, resulting in the lack of correlation investigation among stoichiometry, microstructure, electronics, and NIR photodetection. Here, we demonstrate the success growth of high-quality GaAs1−xSbx NWs with full composition range by adopting a simple and low-cost surfactant-assisted solid source chemical vapor deposition method. All of the as-prepared NWs are uniform, smooth, and straight, without any phase segregation in all stoichiometric compositions. The lattice constants of each NW composition have been well correlated with the chemical stoichiometry and confirmed by high-resolution transmission electron microscopy, X-ray diffraction, and Raman spectrum. Moreover, with the increase of Sb concentration, the hole mobility of the as-fabricated field-effect-transistors and the responsivity and detectivity of the as-fabricated NIR photodetectors increase accordingly. All the results suggest a careful stoichiometric design is required for achieving optimal NW device performances.

关键词： GaAs1−xSbx nanowire stoichiometry effect full-composition-range field-effect hole mobility near-infrared photodetection

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

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Journal of Semiconductors 2021年第11期42卷 18-25页

作者： Xiaorui Zhang Huiping Zhu Song’ang Peng Guodong Xiong Chaoyi Zhu Xinnan Huang Shurui Cao Junjun Zhang Yunpeng Yan Yao Yao Dayong Zhang Jingyuan Shi Lei Wang Bo Li Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Department of Chemistry City University of Hong KongHong Kong 999077China

Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer ***,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation ***,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/*** negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide *** stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is ***,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet *** analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.

关键词： SWCNT FETs low-energy proton irradiation radiation effects electrical performance TID effect displacement damage effect simulation

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A 7T1c nonvolatile sram based on ferroelectric hfo2 capacitor for ultralow power applications 15

A 7T1c nonvolatile sram based on ferroelectric hfo2 capacito...

引用

15th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2020

作者： Liu, Chao Wang, Qiao Yang, Jianguo Jiang, Pengfei Ding, Qingting Zhao, Yuling Luo, Qing Lv, Hangbing Liu, Ming Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing100029 China School of Microelectronics University of Science and Technology of China Hefei230026 China Zhejiang Lab Hangzhou311121 China

ISBN: (纸本)9781728162355

Power consumption is an essential issue in nano CMOS integrated circuits. The power-off operational mode and low-voltage circuits have proposed to reduce energy dissipation. Due to the compatibility of Hf02 ferroelectric capacitors (FeCAP) with CMOS process, FeCAP have been restudied as nonvolatile memory. In this paper, we proposed novel full logic compatible 7T1C nonvolatile static random-Access memory (nvSRAM) based on FeCAP. The proposed memory cell consists of a traditional 6T SRAM core and a FeCAP circuit (1TIC) nonvolatile memory cell, making a 7T1C a scheme. The proposed novel 7T1C nvSRAM cell offers better performance when compared with the exiting nonvolatile nvSRAM cell. The direct current (DC) path is eliminated, and the static power consumption of SRAM is reduced. The power consumption of store, and restore is reduced and the speed is increased. Restore mode operation destructively reads data and does not need to write the data back to SRAM. © 2020 IEEE.

关键词： Static random access storage

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