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International Conference on Solid-State and Integrated Circuit technology

作者： Zhao Qi Hongquan Chen Yirui Jia Nailong He Zhili Zhang Sen Zhang Ming Qiao Bo Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu P. R. China Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing P. R. China CSMC Technologies Corporation Wuxi China Institute of Electronic and Information Engineering of UESTC in Guangdong Dongguan P. R. China Shenzhen Institute for Advanced Study UESTC Shenzhen China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

To mitigate the total ionizing dose (TID) effects of the transient voltage suppressor (TVS), a novel radiation-hardened technology that includes hardening process with oxide etch-back technology and low-voltage (LV) stacked TVS structure is proposed. In this work, the high breakdown voltage (BV) is achieved by employing a series of LV devices to replace sensitive low concentration drift-region in traditional high voltage devices. Furthermore, a novel low-trap-density oxide layer is developed by the high-temperature local oxidation of silicon (LOCOS) etch-back technology and subsequently low-temperature secondary thin oxidation, which greatly reduces the density of hole traps. By combining these two improvements, the TID-hardened lateral TVS with ultra-low clamping voltage $(V_{\text{CL}})$ and high transient power density for three voltage levels are achieved.

关键词： Integrated circuit technology Power system measurements Low voltage TV Lightning protection High-voltage techniques Oxidation silicon Total ionizing dose Transient analysis

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Electronic band reconstruction across the insulator-metal transition in colossal magnetoresistive EuCd2P2

arXiv

引用

arXiv 2023年

作者： Zhang, Huali Du, Feng Zheng, Xiaoying Luo, Shuaishuai Wu, Yi Zheng, Hao Cui, Shengtao Sun, Zhe Liu, Zhengtai Shen, Dawei Smidman, Michael Song, Yu Shi, Ming Zhong, Zhicheng Cao, Chao Yuan, Huiqiu Liu, Yang Center for Correlated Matter School of Physics Zhejiang University Hangzhou310058 China National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei230029 China State Key Laboratory of Functional Materials for Informatics Center for Excellence in Superconducting Electronics SIMIT Chinese Academy of Science Shanghai China Paul Scherrer Institute Swiss Light Source Villigen PSICH-5232 Switzerland CAS Key Laboratory of Magnetic Materials and Devices Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Science Ningbo315201 China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China State Key Laboratory of Silicon Materials Zhejiang University Hangzhou310058 China

While colossal magnetoresistance (CMR) in Eu-based compounds is often associated with strong spin-carrier interactions, the underlying reconstruction of the electronic bands is much less understood from spectroscopic experiments. Here using angle-resolved photoemission, we directly observe an electronic band reconstruction across the insulator-metal (and magnetic) transition in the recently discovered CMR compound EuCd2P2. This transition is manifested by a large magnetic band splitting associated with the magnetic order, as well as unusual energy shifts of the valence bands: both the large ordered moment of Eu and carrier localization in the paramagnetic phase are crucial. Our results provide spectroscopic evidence for an electronic structure reconstruction underlying the enormous CMR observed in EuCd2P2, which could be important for understanding Eu-based CMR materials, as well as designing CMR materials based on large-moment rare-earth magnets. © 2023, CC BY.

关键词： Europium compounds

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Resistive Memory-based Neural Differential Equation Solver for Score-based Diffusion Model

arXiv

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arXiv 2024年

作者： Yang, Jichang Chen, Hegan Chen, Jia Wang, Songqi Wang, Shaocong Yu, Yifei Chen, Xi Wang, Bo Zhang, Xinyuan Cui, Binbin Li, Yi Lin, Ning Xu, Meng Li, Yi Xu, Xiaoxin Qi, Xiaojuan Wang, Zhongrui Zhang, Xumeng Shang, Dashan Wang, Han Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China Institute of the Mind the University of Hong Kong Hong Kong University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan430074 China Department of Electronic and Computer Engineering the Hong Kong University of Science and Technology Hong Kong

Human brains image complicated scenes when reading a novel. Replicating this imagination is one of the ultimate goals of AI-Generated Content (AIGC). However, current AIGC methods, such as score-based diffusion, are still deficient in terms of rapidity and efficiency. This deficiency is rooted in the difference between the brain and digital computers. Digital computers have physically separated storage and processing units, resulting in frequent data transfers during iterative calculations, incurring large time and energy overheads. This issue is further intensified by the conversion of inherently continuous and analog generation dynamics, which can be formulated by neural differential equations, into discrete and digital operations. Inspired by the brain, we propose a time-continuous and analog in-memory neural differential equation solver for score-based diffusion, employing emerging resistive memory. The integration of storage and computation within resistive memory synapses surmount the von Neumann bottleneck, benefiting the generative speed and energy efficiency. The closed-loop feedback integrator is time-continuous, analog, and compact, physically implementing an infinite-depth neural network. Moreover, the software-hardware co-design is intrinsically robust to analog noise. We experimentally validate our solution with 180 nm resistive memory in-memory computing macros. Demonstrating equivalent generative quality to the software baseline, our system achieved remarkable enhancements in generative speed for both unconditional and conditional generation tasks, by factors of 64.8 and 156.5, respectively. Moreover, it accomplished reductions in energy consumption by factors of 5.2 and 4.1. Our approach heralds a new horizon for hardware solutions in edge computing for generative AI applications. © 2024, CC BY-NC-SA.

关键词： Diffusion

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High-order phonon anharmonicity and thermal conductivity in GaN

引用

Physical Review B 2024年第15期109卷 155204-155204页

作者： Bin Wei Yongheng Li Wang Li Kai Wang Qiyang Sun Xiaolong Yang Douglas L. Abernathy Qilong Gao Chen Li Jiawang Hong Yuan-Hua Lin Henan Key Laboratory of Materials on Deep-Earth Engineering School of Materials Science and Engineering Henan Polytechnic University Jiaozuo 454000 China School of Aerospace Engineering Beijing Institute of Technology Beijing 100081 China State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 People's Republic of China Department of Mechanical Engineering University of California Riverside Riverside California 92521 USA College of Physics and Center of Quantum Materials and Devices Chongqing University Chongqing 401331 China Neutron Scattering Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA International Laboratory for Quantum Functional Materials of Henan School of Physics and Microelectronics Zhengzhou University Zhengzhou 450001 China

A comprehensive understanding of phonon transport is essential to develop effective solutions for heat dissipation. Gallium nitride (GaN), a representative of third-generation power semiconductors, has been extensively studied regarding its thermodynamics and lattice dynamics. However, the temperature-dependent phonon properties, especially the anharmonicity at high temperatures, are poorly understood. Here, by combining inelastic neutron scattering (INS) experiments and calculations including the temperature effect based on machine learning potentials, we report the high-order phonon anharmonicity in GaN over a wide temperature range. Our calculations agree well with the experimental phonon dispersion, density of states and entropy, underlining the significance of anharmonicity of GaN at elevated temperatures. Moreover, considering the four-phonon processes, the calculated thermal conductivity is suppressed by 20%, and the anisotropy is also reduced gradually with increasing temperature. Such behavior arises mainly from the large four-phonon scattering channels between 20 and 30 meV, where the critical scattering rule for the three-phonon process is largely restricted at high temperatures. Our study highlights the importance of high-order phonon anharmonicity for thermal transport in GaN and provides a theoretical reference for thermal management in other related semiconductors.

关键词： Thermal conductivity Semiconductors Boltzmann theory Density functional theory Inelastic neutron scattering

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Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

SSRN

引用

SSRN 2023年

作者： Lu, Sheng'ou Xu, Binjie Chen, Hongyu Hang, Wei Wang, Rong Yuan, Julong Pi, Xiaodong Yang, Deren Han, Xuefeng Ultra-precision Machining Research Center Zhejiang University of Technology Hangzhou310023 China State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou311200 China Institute of Advanced Semiconductors Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Zhejiang Hangzhou310027 China

Physical vapor transport is the dominant method for growing 200 mm SiC crystals, and the crystals produced by this method still have dislocations, which affect the performance of the device. In this study, the finite element analysis of 200 mm SiC crystal growth has been conducted to investigate the influencing parameters on the dislocations. The calculations are based on the model of multiple resistance heating proposed in our previous work. The transient heat transfer process for crystal growth has been calculated. Then dynamic mesh technique was employed to consider the shape evolution of the ingot during the crystal growth process. Finally, the distributions of the internal stress and dislocation density have been obtained based on the Alexander-Haasen model. The comparison of different parameters provides guidance for reducing the thermal stress and dislocation density in the 200 mm SiC crystal growth. © 2023, The Authors. All rights reserved.

关键词： silicon carbide

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Enhanced Xylene Detection Performance of Colloidal Quantum Dots Modified Tungsten Oxide Composites

SSRN

引用

SSRN 2023年

作者： Li, Xu Wang, Yinglin Cheng, Pengfei Liu, Yanming Chen, Sitian Du, Weian Zhou, Xin Hao, Yue School of Aerospace Science and Technology Xidian University 266 Xifeng Road Xi’an710126 China Foshan Jinyan BioTech Inc Foshan528000 China MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage School of Chemistry and Chemical Engineering Harbin Institute of Technology Harbin150001 China School of Microelectronics Xidian University Xi’an China Key Laboratory of Wide Band-Gap Semiconductors and Devices Xi’an710126 China

Surface modification of sensitive materials is an effective strategy for building high-performance sensors. In this work, NH4Cl acted as a structure-directing agent was utilizing in the fabrication of WO3 nanoplates with neat grooves. The prepared Co3O4 colloid quantum dots were uniformly dispersed on the WO3 surface to construct the gas sensor with excellent sensing performance. The intrinsic properties, such as crystal structures, surface adsorption states, and chemical states of all samples, were analyzed. Compared with the sensor without Co3O4, the sensing performance of the Co3O4 functionalized sensor towards xylene was significantly improved. The optimal working temperature of the sensor to xylene dropped sharply by 80 ℃, and the response value was as high as 24.63. Combined with material characterization, device testing, and the first-principles analysis, the improved sensor performance is mainly attributed to the following points: the oxygen-adsorbing capacity of grooved WO3 is stronger than smooth WO3 nanoplates, the formation of the p-n junction between Co3O4 and WO3 increased the width of the depletion layer, and oxygen vacancy-rich Co3O4 have preferential adsorption on xylene. © 2023, The Authors. All rights reserved.

关键词： Nanocrystals

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Ultrabroadband and multiband infrared/terahertz photodetectors with high sensitivity

引用

Photonics Research 2021年第11期9卷 2167-2175页

作者： JIAQI ZHU HE ZHU MENGJUAN LIU YAO WANG HANLUN XU NASIR ALI HUIYONG DENG ZHIYONG TAN JUNCHENG CAO NING DAI HUIZHEN WU Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou 310024China Zhejiang Province Key Laboratory of Quantum Technology and Devices Department of Physicsand State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China State Key Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China Key Laboratory of Terahertz Solid-State Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Broadband response is pursued in both infrared(IR)and terahertz(THz)detection technologies,which find their applications in both terrestrial and astronomical ***,we report an ultrabroadband and multiband IR/THz detector based on blocked-impurity-band detecting *** detectors are prepared by implanting phosphorus into germanium(Ge:P),where photoresponses with a P impurity band,a self-interstitial defect band,and a vacancy-P(V-P)pair defect band are realized *** response spectra of the detectors show ultrabroad and dual response bands in a range of 3-28μm(IR band)and 40-165μm(THz band),***,a tiny mid-IR(MIR)band within 3-4.2μm is embedded in the IR *** THz band arises from the P impurity band,whereas the IR and the MIR bands are ascribed to the two defect ***150 m V and 4.5 K,the peak detectivities of the three bands are obtained as 2.9×10^(12) Jones(at 3.9μm),6.8×10^(12) Jones(at 16.3μm),and 9.9×10^(12) Jones(at 116.5μm),*** impressive coverage andsensitivity of the detectors are promising for applications in IR and THz detection technologies.

关键词： multiband bands defect

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Green‑Solvent Processed Blade‑Coating Organic Solar Cells with an Efficiency Approaching 19%Enabled by Alkyl‑Tailored Acceptors

引用

Nano-Micro Letters 2023年第12期15卷 449-462页

作者： Hairui Bai Ruijie Ma Wenyan Su Top Archie Dela Pea Tengfei Li Lingxiao Tang Jie Yang Bin Hu Yilin Wang Zhaozhao Bi Yueling Su Qi Wei Qiang Wu Yuwei Duan Yuxiang Li Jiaying Wu Zicheng Ding Xunfan Liao Yinjuan Huang Chao Gao Guanghao Lu Mingjie Li Weiguo Zhu Gang Li Qunping Fan Wei Ma State Key Laboratory for Mechanical Behavior of Materials Xi’an Jiaotong UniversityXi’an 710049People’s Republic of China Jiangsu Engineering Research Center of Light‑Electricity‑Heat Energy‑Converting Materials and Applications School of Materials Science and EngineeringChangzhou UniversityChangzhou 213164People’s Republic of China Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education/National Engineering Research Center for Carbohydrate Synthesis Jiangxi Normal University99 Ziyang AvenueNanchang 330022People’s Republic of China Department of Electronic and Information Engineering Research Institute for Smart Energy(RISE)The Hong Kong Polytechnic UniversityKowloon 999077Hong KongPeople’s Republic of China School of Materials Science and Engineering Xi’an University of Science and TechnologyXi’an 710054People’s Republic of China Department of Applied Physics The Hong Kong Polytechnic UniversityKowloon 999077Hong KongPeople’s Republic of China Advanced Materials Thrust Function HubThe Hong Kong University of Science and TechnologyNanshaGuangzhouPeople’s Republic of China School of Chemistry and Chemical Engineering Beijing Institute of TechnologyBeijing 100081People’s Republic of China Key Laboratory of Applied Surface and Colloid Chemistry Ministry of EducationShaanxi Key Laboratory for Advanced Energy DevicesShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi’an 710119People’s Republic of China Frontier Institute of Science and Technology Xi’an Jiaotong UniversityXi’an 710054People’s Republic of China Xi’an Key Laboratory of Liquid Crystal and Organic Photovoltaic Materials State Key Laboratory of Fluorine&Nitrogen ChemicalsXi’an Modern Chemistry Research InstituteXi’an 710065People’s Republic of China

Power-conversion-efficiencies(PCEs)of organic solar cells(OSCs)in laboratory,normally processed by spin-coating technology with toxic halogenated solvents,have reached over 19%.However,there is usually a marked PCE drop when the bladecoating and/or green-solvents toward large-scale printing are used instead,which hampers the practical development of ***,a new series of N-alkyl-tailored small molecule acceptors named YR-SeNF with a same molecular main backbone are developed by combining selenium-fused central-core and naphthalene-fused *** to the N-alkyl engineering,NIR-absorbing YR-SeNF series show different crystallinity,packing patterns,and miscibility with polymeric *** studies exhibit that the molecular packing,crystallinity,and vertical distribution of active layer morphologies are well optimized by introducing newly designed guest acceptor associated with tailored N-alkyl chains,providing the improved charge transfer dynamics and stability for the PM6:L8-BO:YRSeNF-based *** a result,a record-high PCE approaching 19%is achieved in the blade-coating OSCs fabricated from a greensolvent o-xylene with high-boiling ***,ternary OSCs offer robust operating stability under maximum-power-point tracking and well-keep>80%of the initial PCEs for even over 400 *** alkyl-tailored guest acceptor strategy provides a unique approach to develop green-solvent and blade-coating processed high-efficiency and operating stable OSCs,which paves a way for industrial development.

关键词： Alkyl-tailored guest acceptors Blade-coating Green solvent processing Stability Organic solar cells

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Three-dimensional Monolithic Micro-LED Display Driven by Atomically Thin Transistor Matrix 29

Three-dimensional Monolithic Micro-LED Display Driven by Ato...

引用

29th International Display Workshops, IDW 2022

作者： Meng, Wanqing Xu, Feifan Yu, Zhihao Tao, Tao Liu, Bin Zhang, Rong Shi, Yi Wang, Xinran National Laboratory of Solid State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Nanjing China College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing China Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices Department of Physics Xiamen University Xiamen China Institute of Future Display Technology Tan Kah Kee Innovation Laboratory Xiamen China

Two-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. Here, we show the integration of large-area MoS2 thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays at 1270 PPI. © 2022 ITE and SID.

关键词： Layered semiconductors

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Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots

arXiv

引用

arXiv 2022年

作者： Hu, Rui-Zi Zhu, Sheng-Kai Zhang, Xin Zhou, Yuan Ni, Ming Ma, Rong-Long Luo, Gang Kong, Zhen-Zhen Wang, Gui-Lei Cao, Gang Li, Hai-Ou Guo, Guo-Ping CAS Key Laboratory of Quantum Information University of Science and Technology of China Anhui Hefei230026 China CAS Center For Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Hefei230026 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Beijing Superstring Academy of Memory Technology Beijing100176 China Origin Quantum Computing Company Limited Anhui Hefei230026 China

The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process is sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and readout visibilities along with dark counts, we describe an alternative threshold-independent method for the single-shot readout of spin qubits in semiconductor quantum dots. We can obtain the extrapolated spin state probabilities of the prepared probabilities of the excited spin state through the threshold-independent method. Then, we analyze the corresponding errors of the method, finding that errors of the extrapolated probabilities cannot be neglected with no constraints on the readout time and threshold voltage. Therefore, by limiting the readout time and threshold voltage we ensure the accuracy of the extrapolated probability. Then, we prove that the efficiency and robustness of this method is 60 times larger than that of the most commonly used method. Moreover, we discuss the influence of the electron temperature on the effective area with a fixed external magnetic field and provide a preliminary demonstration for a single-shot readout up to 0.7 K/1.5 T in the future. Copyright © 2022, The Authors. All rights reserved.

关键词： Semiconductor quantum dots

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