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arXiv 2023年

作者： Hu, Haibo Zhou, Yu Yi, Ailun Bao, Tongyuan Liu, Chengying Luo, Qi Zhang, Yao Wang, Zi Li, Qiang Lu, Dawei Liu, Zhengtong Xiao, Shumin Ou, Xin Song, Qinghai Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology Shenzhen518055 China Pengcheng Laboratory Shenzhen518055 China Shenzhen518045 China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Institute of Advanced Semiconductors Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang Hangzhou311200 China State Key Laboratory of Silicon Materials and Advanced Semiconductors School of Materials Science and Engineering Zhejiang University Hangzhou310027 China Shenzhen Institute for Quantum Science and Engineering Department of Physics Southern University of Science and Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China

Quantum photonic integrated circuits are reshaping quantum networks and sensing by providing compact, efficient platforms for practical quantum applications. Despite continuous breakthroughs, integrating entangled registers into photonic devices on a CMOS-compatible platform presents significant challenges. Herein, we present single electron-nuclear spin entanglement and its integration into a silicon-carbide-on-insulator (SiCOI) waveguide. We demonstrate the successful generation of single divacancy electron spins and near-unity spin initialization of single 13C nuclear spins. Both single nuclear and electron spin can be coherently controlled and a maximally entangled state with a fidelity of 0.89 has been prepared under ambient conditions. Based on the nanoscale positioning techniques, the entangled quantum register has been further integrated into SiC photonic waveguides for the first time. We find that the intrinsic optical and spin characteristics of the register are well preserved and the fidelity of the entangled state remains as high as 0.88. Our findings highlight the promising prospects of the SiCOI platform as a compelling candidate for future scalable quantum photonic applications. Copyright © 2023, The Authors. All rights reserved.

关键词： silicon on insulator technology

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Dynamic neural network with memristive CIM and CAM for 2D and 3D vision

arXiv

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arXiv 2024年

作者： Zhang, Yue Zhang, Woyu Wang, Shaocong Lin, Ning Yu, Yifei He, Yangu Wang, Bo Jiang, Hao Lin, Peng Xu, Xiaoxin Qi, Xiaojuan Wang, Zhongrui Zhang, Xumeng Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100049 China ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Institute of the Mind The University of Hong Kong Hong Kong Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing100049 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China University of Chinese Academy of Sciences Beijing100049 China College of Computer Science and Technology Zhejiang University Zhejiang310027 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong

The brain is dynamic, associative and efficient. It reconfigures by associating the inputs with past experiences, with fused memory and processing. In contrast, AI models are static, unable to associate inputs with past experiences, and run on digital computers with physically separated memory and processing. We propose a hardware-software co-design, a semantic memory-based dynamic neural network (DNN) using memristor. The network associates incoming data with the past experience stored as semantic vectors. The network and the semantic memory are physically implemented on noise-robust ternary memristor-based Computing-In-Memory (CIM) and Content-Addressable Memory (CAM) circuits, respectively. We validate our co-designs, using a 40nm memristor macro, on ResNet and PointNet++ for classifying images and 3D points from the MNIST and ModelNet datasets, which not only achieves accuracy on par with software but also a 48.1% and 15.9% reduction in computational budget. Moreover, it delivers a 77.6% and 93.3% reduction in energy consumption. © 2024, CC BY.

关键词： Memristors

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Floquet control of topological phases and Hall effects in Z2 nodal line semimetals

arXiv

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arXiv 2025年

作者： Liu, Pu Cui, Chaoxi Li, Lei Li, Runze Xu, Dong-Hui Yu, Zhi-Ming School of Microelectronics and Physics Hunan University of Technology and Business Changsha410205 China School of Physics Beijing Institute of Technology Beijing100081 China Research Center for Quantum Physics and Technologies Inner Mongolia University Hohhot010021 China School of Physical Science and Technology Inner Mongolia University Hohhot010021 China Department of Physics Chongqing Key Laboratory for Strongly Coupled Physics Chongqing University Chongqing400044 China Center of Quantum Materials and Devices Chongqing University Chongqing400044 China International Center for Quantum Materials Beijing Institute of Technology Zhuhai519000 China

Dynamic control of topological properties in materials is central to modern condensed matter physics, and Floquet engineering, utilizing periodic light fields, provides a promising avenue. Here, we use Floquet theory to theoretically study the topological response of a Z2 nodal line semimetal (NLSM) when driven by circularly polarized light (CPL). We demonstrate that the direction of CPL irradiation critically dictates the resulting topological phase transitions. Specifically, when light is incident perpendicular to the nodal line plane, increasing the light amplitude induces two successive topological phase transitions: first, from the Z2 NLSM to a vortex NLSM, a rare and intriguing topological state;and second, a transition from the vortex NLSM to a semimetal with a pair of Weyl points (WPs). In stark contrast, irradiation along other directions directly transforms the Z2 nodal line into a pair of WPs. We further investigate the transport properties of the Floquet Z2 NLSM, focusing on the anomalous and planar Hall effects. The anomalous Hall effect exhibits a direction-dependent amplitude variation, deviating from conventional two-band NLSM behavior. Importantly, we reveal a significant and tunable planar Hall effect, a phenomenon largely unexplored in Floquet topological materials, which is highly sensitive to both light amplitude and direction. Our findings not only present a novel route to realize the vortex NLSM, but also establish an efficient way to control Hall transport phenomena in Z2 NLSMs. Copyright © 2025, The Authors. All rights reserved.

关键词： Irradiation

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Review of deep ultraviolet photodetector based on gallium oxide

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Chinese Physics B 2019年第1期28卷 126-142页

作者： Yuan Qin Shibing Long Hang Dong Qiming He Guangzhong Jian Ying Zhang Xiaohu Hou Pengju Tan Zhongfang Zhang Hangbing Lv Qi Liu Ming Liu Key Laboratory of Microelectronics Devices&Integration Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Microelectronics University of Science and Technology of ChinaHefei 230026China University of Chinese Academy of Sciences Beijing 100049China

Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga_2O_3 is regarded as the most promising candidate for UV ***, the bandgap of Ga_2O_3 is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga_2O_3 to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga_2O_3 photodetectors based on single crystal or amorphous Ga_2O_3 are mainly focused on metal–semiconductor–metal and Schottky *** this work, the recent achievements of Ga_2O_3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga_2O_3 and amorphous Ga_2O_3 thin film are analyzed and compared. Finally, the prospects of Ga_2O_3 UV photodetectors are forecast.

关键词： gallium oxide ultrawide bandgap ultraviolet(UV) photodetector

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Deep-Learning-Enhanced Single-Spin Readout in silicon Carbide at Room Temperature

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Physical Review Applied 2022年第3期17卷 034046-034046页

作者： Yu-Wei Liao Qiang Li Mu Yang Zheng-Hao Liu Fei-Fei Yan Jun-Feng Wang Ji-Yang Zhou Wu-Xi Lin Yi-Dan Tang Jin-Shi Xu Chuan-Feng Li Guang-Can Guo CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei 230026 People’s Republic of China CAS Center For Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 People’s Republic of China High-Frequency High-Voltage Devices and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences 100029 Beijing China

Defect spin qubits in silicon carbide have recently drawn widespread attention. Extraction of spin information in the presence of noise always requires multiple repeated measurements, which consumes a large amount of time resources. In this paper, we propose a deep-learning-enhanced method to extract effective parameters from continuous-wave optically detected magnetic resonance (ODMR) spectra and Rabi oscillations with less time consumption. Even if the signal-to-noise ratio is reasonably low, a well-trained convolutional neural network (CNN) can predict the resonance peaks of ODMR spectra or the period of Rabi oscillations. Because of the fast output of predictions by the CNN, this method can be used to sense the magnetic field in the environment and microwave intensities in real time.

关键词： Coherent control Color centers Crystal defects Quantum information with solid state qubits Semiconductor compounds Artificial neural networks Machine learning Optically detected magnetic resonance

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Thermodynamic Origins of Structural Metastability in Two-Dimensional Black Arsenic

arXiv

引用

arXiv 2023年

作者： Du, Guoshuai Ke, Feng Han, Wuxiao Chen, Bin Xia, Qinglin Kang, Jun Chen, Yabin School of Aerospace Engineering Beijing Institute of Technology Beijing100081 China Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing100081 China Department of Geological Sciences Stanford University StanfordCA94305 United States Center for High Pressure Science and Technology Advanced Research Shanghai201203 China School of Physics and Electronics Hunan Key Laboratory of Nanophotonics and Devices Central South University Changsha410083 China Beijing Computational Science Research Center Beijing100193 China BIT Chongqing Institute of Microelectronics and Microsystems Chongqing400030 China

Two-dimensional (2D) materials have aroused considerable research interests owing to their potential applications in nanoelectronics and optoelectronics. Thermodynamic stability of 2D structures inevitably affects the performance and power consumption of the fabricated nanodevices. Black arsenic (b-As), as a cousin of black phosphorus, has presented the extremely high anisotropy in physical properties. However, the systematic research on structural stability of b-As is still lack. Herein, we demonstrated the detailed analysis on structural metastability of the natural b-As, and determined its existence conditions in terms of two essential thermodynamic variables as hydrostatic pressure and temperature. Our results confirmed that b-As can only survive below 0.7 GPa, and then irreversibly transform to gray arsenic, in consistent with our theoretical calculations. Furthermore, thermal annealing strategy was developed to precisely control the thickness of b-As flake, and it sublimates at 300 ℃. These results could pave the way for 2D b-As in many promising applications. © 2023, CC BY-NC-SA.

关键词： Arsenic

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Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga_(2)O_(3) substrate

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Chinese Physics B 2021年第1期30卷 483-486页

作者： Xu-Long Chu Zeng Liu Yu-Song Zhi Yuan-Yuan Liu Shao-Hui Zhang Chao Wu Ang Gao Pei-Gang Li Dao-You Guo Zhen-Ping Wu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science&State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China China Aerospace System Simulation Technology Co. Ltd.(Beijing)Beijing 100195China Division of Interdisciplinary and Comprehensive Research&Platform for Characterization and Test Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210046China

We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky *** device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 *** addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered *** work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.

关键词： β-Ga_(2)O_(3)substrate Schottky photodiode solar-blind detection

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Recent progress of integrated circuits and optoelectronic chips

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science China(Information sciences) 2021年第10期64卷 103-135页

作者： Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI School of Microelectronics Xidian University State Key Laboratory of Integrated Service Networks Xidian University National Integrated Circuit Innovation Center School of Microelectronics Fudan University School of Integrated Circuit Science and Engineering Beihang University China Center for Information Industry Development Frontier Institute of Chip and System Fudan University Institute of Microelectronics Peking University Nanjing Electronic Devices Institute State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Institute of Microelectronics Tsinghua University Center for Carbon-based Electronics Department of Electronics Peking University CAS Key Laboratory of Quantum Information University of Science and Technology of China CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Origin Quantum Computing Company Limited Key Laboratory of Flexible Electronics & Institute of Advanced Materials Nanjing Tech University State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China National Laboratory of Solid State Microstructures & College of Engineering and Applied Sciences Nanjing University State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer Science Peking University School of Electrical and Electronic Engineering Tiangong University Center for Information Photonics and Communications School of Information Science and TechnologySouthwest Jiaotong University School of Electronic Electrical and Communication Engineering

Integrated circuits(ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore's law" in the past 60 years, and now has entered the post Moore's law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

关键词： integrated circuit semiconductor science and technology optoelectronic device and chip photonic integrated circuit wide bandgap semiconductors silicon photonics hybrid integration quantum chip integrated microwave photonic photonic neural computing

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Flopping-mode spin qubit in a Si-MOS quantum dot

arXiv

引用

arXiv 2022年

作者： Hu, Rui-Zi Ma, Rong-Long Ni, Ming Zhou, Yuan Chu, Ning Liao, Wei-Zhu Kong, Zhen-Zhen Cao, Gang Wang, Gui-Lei Li, Hai-Ou Guo, Guo-Ping CAS Key Laboratory of Quantum Information University of Science and Technology of China Anhui Hefei230026 China CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Anhui Hefei230026 China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Hefei National Laboratory University of Science and Technology of China Hefei230088 China Beijing Superstring Academy of Memory Technology Beijing100176 China Origin Quantum Computing Company Limited Anhui Hefei230026 China

Spin qubits based on silicon-metal-oxide-semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots (DQD) charge state, "flopping-mode" EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs. Copyright © 2022, The Authors. All rights reserved.

关键词： Semiconductor quantum dots

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Electric field control of the exchange field of a single spin impurity on a surface

arXiv

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arXiv 2024年

作者： Zhang, Xue Reina-Gálvez, Jose Wu, Di'an Martinek, Jan Heinrich, Andreas J. Choi, Taeyoung Wolf, Christoph Spin-X Institute State Key Laboratory of Luminescent Materials and Devices Center for Electron Microscopy South China University of Technology Guangzhou511442 China School of Microelectronics South China University of Technology Guangzhou511442 China Seoul03760 Korea Republic of Ewha Womans University Seoul03760 Korea Republic of Institute of Molecular Physics Polish Academy of Science Smoluchowskiego 17 Poznan60-179 Poland Department of Physics Ewha Womans University Seoul03760 Korea Republic of

Electric control of spins offers faster switching and more localized manipulation compared to magnetic fields. In this work, we investigate static electric field effects on electron spin resonance of single molecules and atoms using scanning tunneling microscopy. We observe significant resonance frequency shifts when varying the applied DC voltage. These shifts cannot be adequately explained by g-factor changes or adsorbate displacement. Instead, we propose a model based on the control of the magnetic exchange field exerted to the spin impurity by the static electric field, which accurately reproduces the static electric field dependence of the resonance frequency. Our work provides crucial insights into electric field influence on surface spins, advancing fundamental understanding for many quantum technologies with efficient spin control via electric fields. Copyright © 2024, The Authors. All rights reserved.

关键词： Electron spin resonance spectroscopy

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