检索结果-内蒙古大学图书馆

In-depth Understanding of Polarization Switching Kinetics in Polycrystalline $\mathbf{Hf}_{0.5} \mathbf{Zr}_{0.5} \mathbf{O}_{2}$ Ferroelectric Thin Film: A Transition From NLS to KAI

In-depth Understanding of Polarization Switching Kinetics in...

引用

International Electron devices Meeting (IEDM)

作者： Wei Wei Weiqiang Zhang Lu Tai Guoqing Zhao Pengpeng Sang Qianwen Wang Fei Chen Mingfeng Tang Yang Feng Xuepeng Zhan Qing Luo Yuan Li Jiezhi Chen School of Information Science and Engineering Shandong University Qingdao China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781665425735

To achieve deep insights into the polarization switching kinetics in ferroelectric $\text{Hf}0.5\text{Zr}0.5\mathrm{O}_{2}$ (HZO), the intrinsic switching characteristics are measured accurately by using a novel pulse sequence to eliminate the charge trapping, polarization unsaturation and imprint effects. By NLS fittings, the average switching time and the concentration of pinning sites are extracted, with main focus on their dependences on the external electric field, the electrode size $l$ and the temperature $T$ . Although the average switching time shows weak dependence on $T,$ , it decreases sharply with $l$ scaling and sub-ns switching behavior is predicted at $l\leq 3.89\mu \mathrm{m}$ . More importantly, our observations intensely imply that a transition happens from NLS to KAI model when $T$ is below 161K or $l$ is approaching the grain size (10~30nm). This surprised but reasonable transition indicates that, as scaling the ferroelectric memory size or for operations under cryogenic temperatures, HZO ferroelectrics can switch much faster and more uniform.

关键词： Electrodes Temperature dependence Voltage measurement Pulse measurements Switches Transforms Size measurement

来源：评论

学校读者我要写书评

暂无评论

Ferroelectricity in HfO2 from a chemical perspective

arXiv

引用

arXiv 2022年

作者： Yuan, Jun-Hui Mao, Ge-Qi Xue, Kan-Hao Bai, Na Wang, Chengxu Cheng, Yan Lyu, Hangbing Sun, Huajun Wang, Xingsheng Miao, Xiangshui School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan430074 China Hubei Yangtze Memory Laboratories Wuhan430205 China Department of Electronics East China Normal University Shanghai200241 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Ferroelectricity observed in thin film HfO2, either doped with Si, Al, etc. or in the Hf0.5Zr0.5O2 form, has gained great technical significance. However, the soft mode theory faces a difficulty in explaining the origin of such ferroelectricity. In this work, we propose that the 7 cation coordination number of HfO2/ZrO2 lies at the heart of this ferroelectricity, which stems from the proper ionic radii of Hf/Zr compared with O. Among the numerous compounds with non-centrosymmetric nature, e.g., mm2 point group, HfO2 and ZrO2 are special in that they are close to the border of 7 and 8 cation coordination, such that the 8-coordination tetragonal intermediate phase could greatly reduce the switching barrier. Other 7-coordination candidates, including SrI2, TaON, YSBr and YOF are also studied in comparison to HfO2/ZrO2, and six switching paths are analyzed in detail for the Pca21 phase. A rule of preferred switching path in terms of ionic radii ratio and coordination number has been established. We also show the possible route from ferroelectric Pca21 phase to monoclinic P21/c phase in HfO2, which is relevant to the fatigue phenomenon. Copyright © 2022, The Authors. All rights reserved.

关键词： Ferroelectricity

来源：评论

学校读者我要写书评

暂无评论

High Area Efficiency Bidirectional Scr for Low-Voltage Esd Protection

SSRN

引用

SSRN 2023年

作者： Zhou, Shicong Chen, Yipeng Zhu, Xinyu Dong, Shurong Wong, Hei Gao, Zhiliang Wang, Ruojue Wang, Bin Key Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science & Electronic Engineering Hangzhou310027 China Beijing Smartchip Microelectronics Technology Co. Ltd Shanghai China Department of Electrical Engineering City University of Hong Kong Hong Kong Beijing Orient Institute of Measurement and Test Beijing100094 China

An enhanced diode-triggered silicon-controlled rectifier (EDTSCR) is proposed to meet the requirement of bi-directional electrostatic discharge (ESD) protection for low-voltage Integrated circuits (ICs). Based on the conventional diode-triggered silicon-controlled rectifier (DTSCR), the newly proposed EDTSCR incorporates an additional PMOS and NMOS, respectively, in the N-Well and P-Well to offer additional current paths along the surface which enhances the robustness of the device significantly. TCAD simulation shows that the EDTSCR is still triggered by the diode strings but has a more uniform current distribution for the ON state because of the additional surface current paths. The proposed EDTSCR has excellent dual-directional ESD protection performance with a figure of merit (FOM) of 4.91 mA/um2 which results in about 75% improvement as compared with the conventional DTSCR realized with the same process. EDTSCR also has higher area efficiency, lower trigger voltage, lower current leakage and faster turn-on speed than the DTSCR. The proposed EDTSCR is an attractive ESD protection solution for ultralow voltage ICs. © 2023, The Authors. All rights reserved.

关键词： Diodes

来源：评论

学校读者我要写书评

暂无评论

Novel Staircase Wave ESD Testing Method for Accurate Latch-Up Evaluation

Novel Staircase Wave ESD Testing Method for Accurate Latch-U...

引用

Design and System (IEDS), International EOS/ESD Symposium on

作者： Zhao Qi Yonggang Shi Ming Qiao Fei Zhao Bo Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu P. R. China Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing P.R. China Institute of Electronic and Information Engineering of UESTC Dongguan Guangdong P.R. China

ISBN: (数字)9781585373383

ISBN: (纸本)9781665469814

With the development of the electrostatic discharge (ESD) protection devices, different protection strategies are proposed to increase ESD latch-up immunity, such as high holding voltage ( $V_{h}$ ), high holding current ( $I_{h}$ ) or double-snapback. As a result, the regular Transmission Line Pulse (TLP) test is difficult to accurately judge their latch-up states by ESD window in some cases, some high holding current devices will also be latched up although their $I_{h}$ and $V_{h}$ meet the ESD window. This paper proposed a new testing concept and initially established a new transient staircase wave simulation evaluation system. By introducing the staircase wave simulation, the transient turn-off characteristics of the devices are achieved, which accurately judges their latch-up risks.

关键词： Electrostatic discharge protection Power transmission lines Simulation Voltage Mathematical models Generators Transient analysis

来源：评论

学校读者我要写书评

暂无评论

Efficient and accurate neural field reconstruction using resistive memory

arXiv

引用

arXiv 2024年

作者： Yu, Yifei Wang, Shaocong Zhang, Woyu Zhang, Xinyuan Wu, Xiuzhe He, Yangu Yang, Jichang Zhang, Yue Lin, Ning Wang, Bo Chen, Xi Wang, Songqi Zhang, Xumeng Qi, Xiaojuan Wang, Zhongrui Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Hong Kong Institute of Mind The University of Hong Kong Hong Kong Hong Kong Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Frontier Institute of Chip and System Fudan University Shanghai200433 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong Hong Kong

Human beings construct perception of space by integrating sparse observations into massively interconnected synapses and neurons, offering a superior parallelism and efficiency. Replicating this capability in AI finds wide applications in medical imaging, AR/VR, and embodied AI, where input data is often sparse and computing resources are limited. However, traditional signal reconstruction methods on digital computers face both software and hardware challenges. On the software front, difficulties arise from storage inefficiencies in conventional explicit signal representation. Hardware obstacles include the von Neumann bottleneck, which limits data transfer between the CPU and memory, and the limitations of CMOS circuits in supporting parallel processing. We propose a systematic approach with software-hardware co-optimizations for signal reconstruction from sparse inputs. Software-wise, we employ neural field to implicitly represent signals via neural networks, which is further compressed using low-rank decomposition and structured pruning. Hardware-wise, we design a resistive memory-based computing-in-memory (CIM) platform, featuring a Gaussian Encoder (GE) and an MLP Processing Engine (PE). The GE harnesses the intrinsic stochasticity of resistive memory for efficient input encoding, while the PE achieves precise weight mapping through a Hardware-Aware Quantization (HAQ) circuit. We demonstrate the system’s efficacy on a 40nm 256Kb resistive memory-based in-memory computing macro, achieving 31.5×, 35.5×, and 47.2× energy efficiency improvements and 10.8×, 38.8×, and 6.2× parallelism improvements without compromising reconstruction quality in tasks like 3D CT sparse reconstruction, novel view synthesis, and novel view synthesis for dynamic scenes. This work advances the AI-driven signal restoration technology and paves the way for future efficient and robust medical AI and 3D vision applications. Copyright © 2024, The Authors. All rights reserved.

关键词： Signal reconstruction

来源：评论

学校读者我要写书评

暂无评论

Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocation

Atomic-scale characterization of defects generation during f...

引用

International Electron devices Meeting (IEDM)

作者： Yunzhe Zheng Yonghui Zheng Zhaomeng Gao Jun-Hui Yuan Yan Cheng Qilan Zhong Tianjiao Xin Yiwei Wang Cheng Liu Yaru Huang Rong Huang Xiangshui Miao Kan-Hao Xue Hangbing Lyu Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Shanghai China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan China

ISBN: (纸本)9781665425735

For the first time, we directly observed the lattice dislocation and monoclinic (m-) phase formation in ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) films during fatigue, through the spherical aberration (Cs)-corrected transmission electron microscopy (TEM) technique. The main observations are: 1. More oxygen vacancies (Vo) tend to be generated when the orthorhombic (o-) phase polar axis is close to the out-of-plane direction (parallel to the electrical field); 2. The o-phase with large grain size tends to fragment with lattice dislocation and m-phase formation by martensitic-like transformation; 3. At the interface of m-/o-structure, the Vo formation energies are lowered. This work provides fundamental understanding on the defect generation mechanism of HZO film at the atomic-level, laying a solid foundation to further optimization and commercialization of the ferroelectric HZO devices.

关键词： Grain size Transmission electron microscopy Films Microscopy Ferroelectric materials Lattices Fatigue

来源：评论

学校读者我要写书评

暂无评论

Degradation Studies on 8-Layer 3D Vertical Resistive Random Access Memory Under Moisture

Degradation Studies on 8-Layer 3D Vertical Resistive Random ...

引用

International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Dengyun Lei Huiwei Wu Yiqiang Chen Yun Huang Yunfei En Qiantong Guo Feng Zhang Rui Gao Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China China Electronics Corporation Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

Resistive random-access memory (RRAM) is a promising alternative to Flash memory. For high density application, 3D vertical RRAM (VRRAM) is a cost-effective method that attracts many attentions. However, the VRRAM also has some reliability issues. In this paper, the degradation under moisture stress is studied. High resistant state(HRS) is sensitive to moisture, while the low resistant state(LRS) remains stable. So, the moisture stress decreases the memory window. This degradation is caused by the moisture invasion HfO2/TaOx interface along the side wall and reduce the barrier of the interface. Based on Poole-Frenkel emission, this paper models the degradation mechanism to illustrate the process.

关键词： Degradation Resistance Integrated circuits Three-dimensional displays Resistive RAM Moisture Hafnium compounds

来源：评论

学校读者我要写书评

暂无评论

Publisher's Note: “Engineering photoelectric conversion efficiency in two-dimensional ferroelectric Cs2PbI2Cl2/Sc2CO2 heterostructures” [Appl. Phys. Lett. 124, 252903 (2024)]

引用

Applied Physics Letters 2024年第3期125卷

作者： Guozheng Nie Fang Zhong Jun Zhong Huiping Zhu Yu-Qing Zhao School of Physics and Electronics Science Hunan University of Science and Technology Hunan Provincial Key Laboratory of Intelligent Sensors and New Sensor Materials Xiangtan 411201 China College of Materials Engineering North China Institute of Aerospace Engineering Langfang 065000 People's Republic of China Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Beijing 100029 China

This article was originally published online on 18 June 2024 with an error in the title. The title is correct as it appears above. All online versions of this a

关键词：

来源：评论

学校读者我要写书评

暂无评论

Nitrogen Decoration of Basal Plane Dislocations in 4H-SiC

arXiv

引用

arXiv 2022年

作者： Li, Jiajun Luo, Hao Yang, Guang Zhang, Yiqiang Pi, Xiaodong Yang, Deren Wang, Rong State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou310027 China Institute of Advanced Semiconductors Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices Hangzhou Innovation Center Zhejiang University Hangzhou311200 China Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of Physics Zhejiang Sci-Tech University Hangzhou310018 China School of Materials Science and Engineering Henan Institute of Advanced Technology Zhengzhou University Henan Zhengzhou450001 China

Basal-plane dislocations (BPDs) pose a great challenge to the reliability of bipolar power devices based on the 4H silicon carbide (4H-SiC). It is well established that heavy nitrogen (N) doping promotes the conversion of BPDs to threading edge dislocations (TEDs) and improves the reliability of 4H-SiC-based bipolar power devices. However, the interaction between N and BPDs, and the effect of N on the electronic properties of BPDs are still ambiguous, which significantly hinder the understanding on the electron-transport mechanism of 4H-SiC-based bipolar power devices. Combining molten-alkali etching and the Kelvin probe force microscopy (KPFM) analysis, we demonstrate that BPDs create acceptor-like states in undoped 4H-SiC, while acting as donors in N-doped 4H-SiC. First-principles calculations verify that BPDs create occupied defect states above the valence band maximum (VBM) and unoccupied defect states under the conduction-band minimum (CBM) of undoped 4H-SiC. The electron transfer from the defect states of intrinsic defects and native impurities to the unoccupied defect states of BPDs gives rise to the acceptor-like behavior of BPDs in undoped 4H-SiC. Defect formation energies indicate that N atoms can spontaneously decorate BPDs during the N doping of 4H-SiC. The binding between N and BPD is strong against decomposition. The accumulation of N dopants at the core of BPDs results in the accumulation of donor-like states at the core of BPDs in N-doped 4H-SiC. This work not only enriches the understanding on the electronic behavior of BPDs in N-doped 4H-SiC, but also helps understand the electron transport mechanism of 4H-SiC-based bipolar power devices. Copyright © 2022, The Authors. All rights reserved.

关键词： Doping (additives)

来源：评论

学校读者我要写书评

暂无评论

Titanium Oxide Memristors Driven by Oxygen Diffusion Dynamics and 1s1m Biomimetic System

SSRN

引用

SSRN 2022年

作者： Shan, Ke Wang, Fang Lin, Xin Shan, Xin Zhang, Yupeng Li, Zewen Wang, Fei Zhao, Xuanyu Hu, Kai Guo, Hongling Song, Zhitang Zhang, Kailiang Tianjin Key Laboratory of Film Electronic and Communication Devices School of Electrical and Electronic Engineering Tianjin University of Technology Tianjin300384 China School of Materials Science and Engineering Tianjin University of Technology Tianjin300384 China School of Microelectronics Fudan University Shanghai200433 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China

The temperature-sensitive properties of the artificial electronic synapses allow the devices to have both bionanomimetic and sensor functions, which are promising for the research of complete bio-neuro-bionic systems. In this article, an ITO/TiOy/TiOx/TiN memristor with a stacked layer structure was prepared to achieve a gradual modulation of the operating current by depositing the oxygen-deficient layer TiOy. The devices exhibit clear sensitivity and stable retention over the temperature range of 299K-349K for 1000 seconds, while the 1000 endurance cycles allow for biosynaptic analog modulation capabilities, including paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) at room temperature. The mechanism of conductivity based on oxygen diffusion dynamics can be well demonstrated by high-resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) analysis. Furthermore, the sensing-storage integrated 1S1M system based on the ITO/TiOy/TiOx/TiN memristor provides a reasonable conception for the bionic research of biological nervous systems. © 2022, The Authors. All rights reserved.

关键词： Memristors

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：