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IEEE Electron devices technology and Manufacturing Conference (EDTM)

作者： Nianduan Lu Shang Ma Jiezhi Chen Qian Zhou Ling Li Ming Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Beihang Univ. School of Information Science and Engineering Shandong Univ. Qingdao

Based on the first-principles calculations, we have investigated the effect of interface on the performance of oxide-based RRAM. It is found that at the interface of oxide-based RRAM, oxygen vacancies with neutral or + 2 valence are easier to form near the interface, and O atoms at the interface tend to diffuse to vacancies. Combining with experiments, the device is electrical forming free for the interface with small thickness. With increasing the interface, the electrical performance of the device will also become worse.

关键词： Performance evaluation Manufacturing

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Addendum: Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current

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Nature communications 2024年第1期15卷 3878-3878页

作者： Lin, Chen Zhang, Zijun Dai, Zhenbang Wu, Mengjiao Liu, Shi Chen, Jialu Hua, Chenqiang Lu, Yunhao Zhang, Fei Lou, Hongbo Dong, Hongliang Zeng, Qiaoshi Ma, Jing Pi, Xiaodong Zhou, Dikui Wu, Yongjun Tian, He Rappe, Andrew M. Ren, Zhaohui Han, Gaorong State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China Center of Electron Microscope School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China Department of Chemistry University of Pennsylvania Philadelphia PA United States Oden Institute for Computational Engineering and Sciences University of Texas at Austin Austin 78712 TX United States Key Laboratory for Quantum Materials of Zhejiang Province Department of Physics School of Science Westlake University Hangzhou 310024 China Zhejiang Province Key Laboratory of Quantum Technology and Device Department of physics Zhejiang University Hangzhou 310027 China Center for High Pressure Science and Technology Advanced Research 201203 Shanghai China State Key Lab of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University 100091 Beijing China Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou 311215 China Research Center for Intelligent Sensing Zhejiang Lab Hangzhou 311100 China State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China

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Random resistive memory-based deep extreme point learning machine for unified visual processing

arXiv

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arXiv 2023年

作者： Wang, Shaocong Gao, Yizhao Li, Yi Zhang, Woyu Yu, Yifei Wang, Bo Lin, Ning Chen, Hegan Zhang, Yue Jiang, Yang Wang, Dingchen Chen, Jia Dai, Peng Jiang, Hao Lin, Peng Zhang, Xumeng Qi, Xiaojuan Xu, Xiaoxin So, Hayden Wang, Zhongrui Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China ACCESS - AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong University of Chinese Academy of Sciences Beijing100049 China Frontier Institute of Chip and System Fudan University Shanghai200433 China College of Computer Science and Technology Zhejiang University Zhejiang310027 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong

Visual sensors, including 3D LiDAR, neuromorphic DVS sensors, and conventional frame cameras, are increasingly integrated into edge-side intelligent machines. Realizing intensive multi-sensory data analysis directly on edge intelligent machines is crucial for numerous emerging edge applications, such as augmented and virtual reality and unmanned aerial vehicles, which necessitates unified data representation, unprecedented hardware energy efficiency and rapid model training. However, multi-sensory data are intrinsically heterogeneous, causing significant complexity in the system development for edge-side intelligent machines. In addition, the performance of conventional digital hardware is limited by the physically separated processing and memory units, known as the von Neumann bottleneck, and the physical limit of transistor scaling, which contributes to the slowdown of Moore's law. These limitations are further intensified by the tedious training of models with ever-increasing sizes. In this study, we propose a novel hardware-software co-design, random resistive memory-based deep extreme point learning machine (DEPLM), that offers efficient unified point set analysis. Data-wise, the multi-sensory data are unified as point sets and can be processed universally. Software-wise, most weights of deep extreme point learning machines are exempted from training, which significantly reduce training complexity. Hardware-wise, nanoscale resistive memory not only enables collocation of memory and processing, mitigating the von Neumann bottleneck and the slowdown of Moore's law, but also leverages the inherent programming stochasticity for generating the random and sparse weights of the DEPLM, which also lessens the impact of read noise. We demonstrate the system's versatility across various data modalities and two different learning tasks. Compared to a conventional digital hardware-based system, our co-design system achieves 5.90×, 21.04×, and 15.79× energy efficiency improv

关键词： Cost reduction

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Root cause of read after delay in ferroelectric memories

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Chip 2025年第3期4卷

作者： Diqing Su Shaorui Li Xiao Wang Yannan Xu Qingting Ding Heng Zhang Hangbing Lyu Huawei Technologies Co. Shenzhen 518129 China School of Electronic Science and Engineering(National Model Microelectronics College) Xiamen University Xiamen 361100 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

Accelerated margin loss during read after delay (RAD) is a newly discovered reliability concern in HfO 2 -based ferroelectric random access memories (FeRAMs), which significantly impacts the lifetime of the memory device. Unlike conventional fatigue effect, this issue is closely linked to the coercive field ( E c ) shift, or imprint, during bipolar electrical field cycling at intermediate frequency. The precise cause of imprint during RAD, however, remains elusive. To investigate, we employed customized electrical testing to examine the charge transfer behavior in static imprint (SI) and continuous read/write (CRW) scenarios, which can be viewed as RAD performed at minimum and maximum frequencies. Our findings reveal that interfacial charge injection is the primary mechanism for imprint in SI, while bulk charge drives the imprint in asymmetric CRW. Further exploration with a SPICE-based charge transfer model suggests that RAD-related imprint is the result of bulk charge migration, driven by the periodically restored depolarization field after read/write-back operation. Experimental verification supports this theory, highlighting the importance of interface engineering to enhance bound charge screening and element doping to elevate the migration barrier for bulk charges in addressing the RAD problem.

关键词： FeRAM Read after delay Imprint Charge migration HZO

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Ultrafast Plasmon-mediated Superradiance from Vertically Standing Molecules in Metallic Nanocavities

arXiv

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arXiv 2023年

作者： Zhang, Yuan Niu, Yuxin Zhang, Shunping Zhang, Yao Su, Shi-Lei Zheng, Guangchao Wang, Luxia Chen, Gang Xu, Hongxing Shan, Chongxin Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Material Physics Ministry of Education School of Physics and Microelectronics Zhengzhou University Daxue Road 75 Zhengzhou450052 China Institute of Quantum Materials and Physics Henan Academy of Sciences Mingli Road 266-38 Zhengzhou450046 China Department of Physics University of Science and Technology Beijing Beijing100083 China School of Physics and Technology Center for Nanoscience and Nanotechnology Key Laboratory of Artificial Micro- and Nano-structures Ministry of Education Wuhan University Wuhan430072 China Hefei National Research Center for Physical Sciences The Microscale and Synergetic Innovation Centre of Quantum Information and Quantum Physics University of Science and Technology of China Anhui Hefei230026 China

Plasmon-mediated superradiance for molecules around metallic nanospheres was proposed ten years ago. However, its demonstration has not been achieved yet due to the experimental difficulty of positioning molecules, and the theoretical limitation to the enhanced collective rate of low excited molecules. In this Letter, we propose that the ultrafast plasmon-mediated superradiant pulses can be observed with strongly excited methylene blue molecules standing vertically inside gold nanoparticle-on-mirror nanocavities. Our simulations indicate that in this system the molecules could interact with each other via plasmon- and free-space mediated coherent and dissipative coupling. More importantly, the coherent coupling mediated by short-ranged propagating surface plasmons cancel largely the direct dipole-dipole coupling mediated by the free-space field, and the dominated dissipative coupling mediated by relatively long-ranged gap plasmons enables the ultra-fast superradiant pulses within picosecond scale. Our study opens up the possibility of studying the rich superradiant effects from the quantum emitters in a sub-wavelength volumn by engineering the plasmonic environments. Copyright © 2023, The Authors. All rights reserved.

关键词： Molecules

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Violation of the T^(−1) Relationship in the Lattice Thermal Conductivity of Mg_(3)Sb_(2) with Locally Asymmetric Vibrations

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Research 2020年第1期2020卷 750-759页

作者： Yifan Zhu Yi Xia Yancheng Wang Ye Sheng Jiong Yang Chenguang Fu Airan Li Tiejun Zhu Jun Luo Christopher Wolverton GJeffrey Snyder Jianjun Liu Wenqing Zhang State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Materials Genome Institute Shanghai UniversityShanghai 200444China Department of Materials Science and Engineering Northwestern UniversityIL 60208USA Max Planck Institute for Chemical Physics of Solids Dresden 01187Germany State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China School of Materials Science and Engineering Shanghai UniversityShanghai 200444China Department of Physics and Shenzhen Institute for Quantum Science&Engineering Southern University of Science and TechnologyShenzhen 518055China Guangdong Provincial Key Lab for Computational Science and Materials Design and Shenzhen Municipal Key Lab for Advanced Quantum Materials and Devices Southern University of Science and TechnologyShenzhen 518055China

Most crystalline materials follow the guidelines of T^(-1) temperature-dependent lattice thermal conductivity(κ_(L))at elevated ***,we observe a weak temperature dependence ofκL in Mg_(3)Sb_(2),T^(-0:48) from theory and T-0:57 from measurements,based on a comprehensive study combining ab initio molecular dynamics calculations and experimental measurements on single crystal Mg_(3)Sb_(2).These results can be understood in terms of the so-called“phonon renormalization”effects due to the strong temperature dependence of the interatomic force constants(IFCs).The increasing temperature leads to the frequency upshifting for those low-frequency phonons dominating heat transport,and more importantly,the phononphonon interactions are ***-depth analysis reveals that the phenomenon is closely related to the temperature-induced asymmetric movements of Mg atoms within MgSb_(4) *** increasing temperature,these Mg atoms tend to locate at the areas with relatively low force in the force profile,leading to reduced effective 3^(rd)-order *** locally asymmetrical atomic movements at elevated temperatures can be further treated as an indicator of temperature-induced variations of IFCs and thus relatively strong phonon *** present work sheds light on the fundamental origins of anomalous temperature dependence of κ_(L) in thermoelectrics.

关键词： phonon Conductivity Locally

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10⁵× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications

10<sup>5</sup>× Endurance Improvement of FE-HZO by an Innov...

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Symposium on VLSI technology

作者： Tiancheng Gong Lei Tao Junkang Li Yan Cheng Yannan Xu Wei Wei Pengfei Jiang Peng Yuan Yuan Wang Yuting Chen Yaxin Ding Yang Yang Yan Wang Bing Chen Qing Luo Steve S. Chung Shixuan Du Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Institute of Physics of Chinese Academy of Sciences Beijing China College of Information Science and Electronic Engineering Zhejiang University Hangzhou China Key Laboratory of Polar Materials and Devices Ministry of Education East China Normal University Shanghai China National Chiao Tung University Taiwan

High operating voltage and low endurance are obstacles for FE HZO to be a viable candidate for NV-DRAM technology. In this work, we provide a breakthrough solution for HZO towards 1z node NV-DRAM application. Firstly, the endurance failure mechanism of HZO film under low-electric field (<1.5MV/cm) is systematically investigated by electrical characterizations, DFT calculations and STEM-ABF technique. It is found that fatigue under low-electric field is relevant to the electron de-trapping rather than defect generation. Furthermore, based on the new insight on the failure mechanism, a novel rejuvenation method is proposed. Five orders of endurance enhancement can be achieved. The excellent properties including low operating voltage (1.1V), non-volatile and fairly high endurance (>10¹⁴) are quite promising towards 1z node NV-DRAM applications.

关键词： Discrete Fourier transforms Failure analysis Very large scale integration Fatigue Iron

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MXenes induce epitaxial growth of size-controlled noble nanometals:A case study for surface enhanced Raman scattering(SERS)

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Journal of Materials science & technology 2020年第5期40卷 119-127页

作者： Renfei Cheng Tao Hu Minmin Hu Changji Li Yan Liang Zuohua Wang Hui Zhang Muchan Li Hailong Wang Hongxia Lu Yunyi Fu Hongwang Zhang Quan-Hong Yang Xiaohui Wang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China University of Chinese Academy of Sciences Beijing 100049China National Engineering Research Center for Equipment and Technology of Cold Strip Rolling College of Mechanical EngineeringYanshan UniversityQinhuangdao 066004China Department of Materials Science and Engineering Monash UniversityClaytonVictoria 3800Australia Institute of Microelectronics Key Laboratory of Microelectronic Devices and CircuitsPeking UniversityBeijing 100871China School of Materials Science and Engineering Zhengzhou UniversityZhengzhou 450001China School of Chemical Engineering&Technology Tianjin UniversityTianjin 300072China

Noble nanometals are of significance in both scientific interest and technological applications,which are usually obtained by conventional wet-chemical *** surfactants are always used in the synthesis to prevent unexpected overgrowth and aggregation of noble ***,the surfactants are hard to remove and may interfere with plasmonic and catalytic studies,remaining surfactant-free synthesis of noble nanometals a ***,we report an approach to epitaxial growth of sizecontrolled noble nanometals on *** piloted by density functional theory calculations,along with work function experimental determination,kinetic and spectroscopic studies,epitaxial growth of noble nanometals is initiated via a mechanism that involves an in situ redox *** the redox,MXenes as two-dimensional solid reductants whose work functions are compatible with the reduction potentials of noble metal cations,enable spontaneous donation of electrons from the MXenes to noble metal cations and reduce the cations into nanoscale metallic metals on the outmost surface of *** surfactants nor external reductants are used during the whole synthesis process,which addresses a long-standing interference issue of surfactant and external reductant in the conventional wet-chemical ***,the MXenes induced noble nanometals are ***,noble nanometals firmly anchored on MXenes exhibit excellent performance towards surface enhanced Raman *** developed strategy will promote the nanostructure-controlled synthesis of noble nanometals,offering new opportunities to further improve advanced functional properties towards practical applications.

关键词： Two-dimensional materials MXene In situ redox Noble metal SERS

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Controlling Synthetic Spin-Orbit Coupling in a silicon Quantum Dot with Magnetic Field

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Physical Review Applied 2021年第4期15卷 044042-044042页

作者： Xin Zhang Yuan Zhou Rui-Zi Hu Rong-Long Ma Ming Ni Ke Wang Gang Luo Gang Cao Gui-Lei Wang Peihao Huang Xuedong Hu Hong-Wen Jiang Hai-Ou Li Guang-Can Guo Guo-Ping Guo CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei Anhui 230026 China CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Hefei Anhui 20026 China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Shenzhen Institute for Quantum Science and Engineering Southern University of Science and Technology Shenzhen 518055 China Guangdong Provincial Key Laboratory of Quantum Science and Engineering Southern University of Science and Technology Shenzhen 518055 China Department of Physics University at Buffalo SUNY Buffalo New York 14260 USA Department of Physics and Astronomy University of California Los Angeles California 90095 USA Origin Quantum Computing Company Limited Hefei Anhui 230026 China

Tunable synthetic spin-orbit coupling (SSOC) is one of the key challenges in various quantum systems, such as ultracold atomic gases, topological superconductors, and semiconductor quantum dots. Here we experimentally demonstrate controlling the SSOC by investigating the anisotropy of spin-valley resonance in a silicon quantum dot. As we rotate the applied magnetic field in plane, we find a striking nonsinusoidal behavior of resonance amplitude that distinguishes SSOC from the intrinsic spin-orbit coupling (ISOC), and associate this behavior with the previously overlooked in-plane transverse magnetic field gradient. Moreover, by theoretically analyzing the experimentally measured SSOC field, we predict the quality factor of the spin qubit could be optimized if the orientation of the in-plane magnetic field is rotated away from the traditional working point.

关键词： Magnetic anisotropy Quantum information with solid state qubits Spin blockade Spin-orbit coupling Valleytronics Double quantum dots Elemental semiconductors Electron spin resonance

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Voltage-control oscillator based on Pt/C/NbO_x/TiN device with highly improved threshold switching performances

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science China(Physics,Mechanics & Astronomy) 2019年第12期62卷 126-129页

作者： Wei Wang ZuHeng Wu Tuo Shi YongZhou Wang Sen Liu RongRong Cao Hui Xu Qi Liu QingJiang Li College of Electronic Science and Technology National University of Defense TechnologyChangsha 410073China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Oscillator is a common key component of electronic *** periodic signal produced by the oscillator is generally required in various applications,such as the electronic system clock,electronic neurons,and the true random number generator system[1-6].Capacitors and inductors are usually utilized to generate periodic waveforms in the traditional oscillator,which greatly reduces integration and cannot be packaged into chips[2].Oscillators based on a memristor have been proposed as a solution to these issues[7-14].The memristor has attracted great attention and has been widely applied in many fields,such as memory,com?puting,security,etc.

关键词： oscillator system electronic

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