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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors

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science China(Information sciences) 2022年第6期65卷 277-278页

作者： Mengxuan YANG Qianqian HUANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Dear editor,Recently, ferroelectric(FE)-based negative capacitance FET(NCFET) with ferroelectric/dielectric(FE/DE) gate stack has attracted extensive attention due to its capability of sub-60 mV/dec subthreshold swing... 详细信息

关键词： Ferroelectric Negative differential capacitance effect Polarization Low power Subthreshold swing

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Defects in monolayer WS2 grown via sulfurization of WSe2

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Progress in Natural science:Materials International 2024年第2期34卷 323-328页

作者： Shunhui Zhang Xiang Lan Hang Liu Xuyang Zhang Baihui Zhang Zhikang Ao Tian Zhang Peng Chen Xiangdong Yang Fangping Ouyang Zhengwei Zhang Hunan Key Laboratory of Nanophotonics and Devices School of Physics Central South University College of Materials Science and Engineering Hunan University Physical Sciences and Engineering Division King Abdullah University of Science and Technology School of Energy and Power Engineering Changsha University of Science and Technology School of Flexible Electronics (Future Technologies) Institute of Advanced Materials Jiangsu National Synergetic Innovation Centre for Advanced Materials Nanjing Tech University School of Microelectronics Southern University of Science and Technology Institute of Micro/Nano Materials and Devices Ningbo University of Technology

The conversion of chalcogen atoms into other types of chalcogen atoms in transition metal dichalcogenides exhibits significant advantages in tuning the bandgaps and constructing lateral ***,despite atomic defects at the atomic scale were inevitably formed during conversion process,the construction of dislocations remains ***,we conducted in-situ sulfurization to achieve structural transformation from monolayer WSe2to *** probe these transformations at atomic scale using high-angle annular dark field scanning transmission electron microscopy（HAADF-STEM） and study structural defects of sulfurizedWS2by strain and displacement *** discovered that high-quality WSe2flakes were completely sulfurized while dislocations were successfully constructed,manifesting atomic surface roughness and structural *** work provides insights into designing and optimizing customized Transition metal dichalcogenides（TMDs）materials in controlled synthesis and defect engineering.

关键词： Tungsten disulfide Tungsten diselenide Sulfurization Dislocations Strain and displacement fields

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Spin transport characteristics modulated by the GeBi interlayer in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures

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Chinese Physics B 2024年第2期33卷 471-475页

作者：李明明张磊金立川郭海中 Key Laboratory of Materials Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China State Key Laboratory of Electronic Thin Films&Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Institute of Quantum Materials and Physics Henan Academy of SciencesZhengzhou 450046China

For the past few years,germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor *** main challenges in the development of modern semiconductor spintronics are the generation,detection,and manipulation of spin ***,the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures were investigated *** effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were *** spin-injection efficiency in the Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures is comparable to that of the Y_(3)Fe_(5)O_(12)/Pt bilayer,and the inverse spin Hall voltage exponential decays with the increase in the barrier ***,the band gap of the GeBi layer was tuned by changing the Bi *** spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi *** results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials.

关键词： spin current Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures spin pumping inverse spin Hall effect

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SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS

SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BE...

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2024 IEEE International Symposium on Circuits and Systems, ISCAS 2024

作者： Su, Zexin Li, Bo Liu, Chang Su, Xiaohui Luo, Qian Ren, Hongyu Han, Zhengsheng Institute of Microelectronics of The Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Science And Technology On Silicon Devices Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9798350330991

In this paper, a novel static random-access memory (SRAM) based physical unclonable function (PUF) with ultra-low native bit error rate (BER) is proposed. In the conventional 6T SRAM PUF, the thermal noise weakens the effect of the inherent mismatch on the PUF cell output at the initial power-on transition time, resulting in a high native BER. To realize a low native BER, a 7T PUF with noise immunity is proposed. Through inserting a mono-stable state before the bistable state, the 7T cell avoids the noise impact during the power-on transition period and amplify the mismatch voltage, resulting a huge native BER reduction. Two custom SRAM PUFs adopting 6T cell and 7T cell respectively, were fabricated in 55nm CMOS process to evaluate BER characteristics. The experimental results show that the native BER of the proposed 7T SRAM PUF is only 0.58%, which is nearly 11X lower than the 6T PUF of 6.12%. And as temperature varying from -25°C to 75°C, the worst BER of 7T PUF is 2.31% and is around 5X lower than the 6T PUF of 11.9%. In addition, raw bits generated from the proposed 7T PUF also passed the National institute of Standards and technology (NIST) randomness tests. © 2024 IEEE.

关键词： Bit error rate

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A novel active-passive protection strategy endows carbonyl iron with excellent intelligent anti-corrosion and microwave absorption dual functional characteristics

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Nano Research 2025年第1期18卷 487-500页

作者： Wei Tian Quanyuan Feng Linbo Zhang Yinfan Liu Xian Jian Longjiang Deng Institute of Microelectronics School of Information Science and TechnologySouthwest Jiaotong UniversityChengdu 611756China National Engineering Researching Centre of Electromagnetic Radiation Control Materials Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of EducationState Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu 611731China The Yangtze Delta Region Institute(Huzhou)&School of Electronic Science and Engineering University of Electronic Science and Technology of ChinaHuzhou 313001China

Carbonyl iron absorbers(CI)face significant challenges in practical applications,such as corrosion,interface bonding failure,detachment,and high maintenance ***,we have developed intelligent self-healing technology based on proactive/passive mechanisms via in situ synthesis of self-healing factors(polydopamine/benzotriazole(PDA/BTA))and physical barrier layers(SiO_(2)/1,1,1,3,3,3-hexamethyl disilazane,SiO_(2)/HMDS)to enhance corrosion resistance,while also being compatible with efficient microwave absorption *** unique multiscale structure gives full play to the utilization of the roles of each functional layer,including the intelligent self-healing features of PDA/BTA,physical shielding and spatial confinement characteristics of SiO_(2)/HMDS,and magnetic-dielectric synergistic mechanism resulted from the good impedance matching characteristics,the conduction loss,the interfacial polarization loss and natural *** asfabricated composites achieved an exceptional minimum reflection loss value of-55.4 dB at 10.7 GHz and the effective absorption band of 7.6 ***,it still exhibits obvious self-healing and corrosion resistance characteristics after 360 h corrosion treatment,ascribed to the self-healing mechanism of PDA/BTA and the blocking intervention effect of SiO_(2)/*** work is considered to pave the way for the synthesis of high-performance magnetic absorbers,especially in enhancing their intelligent self-healing ability in corrosive environments.

关键词： microwave absorption intelligent self-healing technology carbonyl iron multiscale structure magneticdielectric synergistic mechanism

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Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance

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Journal of Semiconductors 2024年第1期45卷 33-37页

作者： Yang Feng Zhaohui Sun Yueran Qi Xuepeng Zhan Junyu Zhang Jing Liu Masaharu Kobayashi Jixuan Wu Jiezhi Chen School of Information Science and Engineering(ISE) Shandong UniversityQingdao 266200China Neumem Co. LtdHefei 230093China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100084China Institute of Industrial Science The University of TokyoTokyoJapan

With the rapid development of machine learning,the demand for high-efficient computing becomes more and more *** break the bottleneck of the traditional Von Neumann architecture,computing-in-memory(CIM)has attracted increasing attention in recent *** this work,to provide a feasible CIM solution for the large-scale neural networks(NN)requiring continuous weight updating in online training,a flash-based computing-in-memory with high endurance(10^(9) cycles)and ultrafast programming speed is *** the one hand,the proposed programming scheme of channel hot electron injection(CHEI)and hot hole injection(HHI)demonstrate high linearity,symmetric potentiation,and a depression process,which help to improve the training speed and *** the other hand,the low-damage programming scheme and memory window(MW)optimizations can suppress cell degradation effectively with improved computing *** after 109 cycles,the leakage current(I_(off))of cells remains sub-10pA,ensuring the large-scale computing ability of *** characterizations are done on read disturb to demonstrate its robust *** processing CIFAR-10 tasks,it is evident that~90%accuracy can be achieved after 109 cycles in both ResNet50 and VGG16 *** results suggest that flash-based CIM has great potential to overcome the limitations of traditional Von Neumann architectures and enable high-performance NN online training,which pave the way for further development of artificial intelligence(AI)accelerators.

关键词： NOR flash memory computing-in-memory endurance neural network online training

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Theoretical insights into efficient oxygen evolution reaction using non-noble metal single-atom catalysts on W_(2)CO_(2)MXene

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Rare Metals 2024年第10期43卷 5082-5094页

作者： Jing-Yu Zhou Zhi-Cheng Han Shu Zhao Tao Yang Da-Zhou Yan Hai-Jun Yu Institute of Advanced Battery Materials and Devices College of Materials Science and EngineeringBeijing University of TechnologyBeijing 100124China Key Laboratory of Advanced Functional Materials Ministry of EducationBeijing University of TechnologyBeijing 100124CChhiinnaa China ENFI Engineering Corporation Beijing 100038China National Engineering Research Center of Silicon-Based Materials Manufacturing Technology Luoyang 471000China

The pursuit of highly active oxygen evolution reaction(OER)catalysts,especially those free of noble metals,is a focal point in fuel cell *** extensive density functional theory calculations,this study designed and evaluated the activity and stability of singleatom catalysts(SACs)composed of 3d,4d and 5d transition metals supported on tungsten-based MXene for OER *** highlighted the exceptional OER performance of Ni@W_(2)CO_(2),Rh@W_(2)CO_(2)and Pt@W_(2)CO_(2),displaying remarkably low overpotentials The catalytic activity of TM@W_(2)CO_(2)SACs exhibited a robust correlation with surface properties,particularly the d-band center index and surface work *** Ni@W_(2)CO_(2),Rh@W_(2)CO_(2)and Pt@W_(2)CO_(2)emerged as promising candidates for OER and oxygen reduction reaction(ORR)bifunctional catalysis,while Pt@W_(2)CO_(2)and Rh@W_(2)CO_(2)showed high potential for OER and hydrogen evolution reaction(HER)bifunctional catalysis The effectiveness of tungsten-based MXene as a substrate for non-noble-metal SACs marks a breakthrough in OER catalyst design,driving advancements towards sustainable energy solutions and addressing critical challenges in energy conversion and storage.

关键词： Oxygen evolution reaction Single-atom catalysts MXene Non-noble metal Density functional theory

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XOR spin logic operated by unipolar current based on field-free spin-orbit torque switching induced by a lateral interface

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Rare Metals 2024年第8期43卷 3868-3875页

作者： Yan-Ru Li Mei-Yin Yang Guo-Qiang Yu Bao-Shan Cui Jin-Biao Liu Yong-Liang Li Qi-Ming Shao Jun Luo Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences(IMECAS)Beijing 100029China University of Chinese Academy of Sciences(UCAS) Beijing 100049China Songshan Lake Materials Laboratory Dongguan 523808China Institute of Physics Chinese Academy of SciencesBeijing 100190China Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education Lanzhou UniversityLanzhou 730000China Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyHong Kong 999077China

Spin logics have emerged as a promising avenue for the development of logic-in-memory *** particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential for low-power stateful logic circuits in the next *** this study,we successfully obtained the XOR logic gate by utilizing a spin-orbit torque device with a lateral interface,which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic *** angle of the lateral interface is set at 45°relative to the current direction,leading to the competition between symmetry breaking and current-driven Néel-type domain wall ***,the field-free magnetic switching reversed is realized by the same sign of current amplitude at this *** on this field-free magnetic switching behavior,we successfully proposed an XOR logic gate that could be implemented using only a single spin-orbit torque Hall *** study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.

关键词： Filed-free magnetic switching Spin-orbit torque XOR logic gate Lateral interface

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Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

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Journal of Semiconductors 2022年第1期43卷 81-89页

作者： Yongbo Liu Huilong Zhu Yongkui Zhang Xiaolei Wang Weixing Huang Chen Li Xuezheng Ai Qi Wang Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China University of Science and Technology of China Hefei 230026China

A new type of vertical nanowire(VNW)/nanosheet(VNS)FETs combining a horizontal channel(HC)with bulk/back-gate electrode configuration,including Bulk-HC and FD-SOI-HC VNWFET,is proposed and investigated by TCAD *** were carried out between conventional VNWFET and the proposed ***-SOI-HC VNWFET exhibits better Ion/Ioff ratio and DIBL than Bulk-HC *** impact of channel doping and geometric parameters on the electrical character-istic and body factor(γ)of the devices was ***,threshold voltage modulation by bulk/back-gate bias was im-plemented and a largeγis achieved for wide range V_(th)*** addition,results of I_(on)enhancement and Ioff reduction in-dicate the proposed devices are promising candidates for performance and power optimization of NW/NS circuits by adopting dynamic threshold voltage *** results of preliminary experimental data are discussed as well.

关键词： vertical nanowire nanosheet silicon on insulator(SOI) threshold voltage multi-V_(th) threshold voltage modulation

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Orbital-Ordering Driven Simultaneous Tunability of Magnetism and Electric Polarization in Strained Monolayer VCl_(3)

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Chinese Physics Letters 2024年第4期41卷 126-131页

作者：郭的坪王聪王侣锦陆赟豪吴骅张妍宁季威 Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-Nano Devices Department of PhysicsRenmin University of ChinaBeijing 100872China Key Laboratory of Quantum State Construction and Manipulation(Ministry of Education) Renmin University of ChinaBeijing 100872China Zhejiang Province Key Laboratory of Quantum Technology and Device State Key Laboratory of Silicon MaterialsDepartment of PhysicsZhejiang UniversityHangzhou 310027China Laboratory for Computational Physical Sciences(MOE) State Key Laboratory of Surface Physicsand Department of PhysicsFudan UniversityShanghai 200433China Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengdu 610054China

Two-dimensional(2D)van der Waals magnetic materials have promising and versatile electronic and magnetic properties in the 2D limit,indicating a considerable potential to advance spintronic *** predictions thus far have not ascertained whether monolayer VCl_(3) is a ferromagnetic(FM)or anti-FM monolayer;this also remains to be experimentally *** theoretically investigate the influence of potential factors,including C_(3) symmetry breaking,orbital ordering,epitaxial strain,and charge doping,on the magnetic ground *** first-principles calculations,we predict a collinear type-Ⅲ FM ground state in monolayer VCl_(3) with a broken C_(3) symmetry,wherein only the former two of three t_(2g)orbitals(a_(1g),e_(g2)^(π)and e_(g1)^(π))are *** atomic layer thickness and bond angles of monolayer VCl_(3) undergo abrupt changes driven by an orbital ordering switch,resulting in concomitant structural and magnetic phase *** doping to the underlying Cl atoms of monolayer VCl_(3) without C_(3) symmetry simultaneously induces in-and out-of-plane *** can achieve a multiferroic phase transition if combined with the discovered adjustments of magnetic ground state and polarization magnitude under *** establishment of an orbital-ordering driven regulatory mechanism can facilitate deeper exploration and comprehension of magnetic properties of strongly correlated systems in monolayer VCl_(3).

关键词： monolayer symmetry orbital

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