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arXiv 2023年

作者： Xu, Linqiang Xu, Lianqiang Lan, Jun Li, Yida Li, Qiuhui Wang, Aili Guo, Ying Ang, Yee Sin Quhe, Ruge Lu, Jing State Key Laboratory of Mesoscopic Physics Department of Physics Peking University Beijing100871 China 8 Somapah Road Singapore487372 Singapore School of Physics and Electronic Information Engineering Engineering Research Center of Nanostructure and Functional Materials Ningxia Normal University Guyuan756000 China School of Microelectronics Southern University of Science and Technology Shenzhen518055 China College of Information Science and Electronic Engineering Zhejiang University Hangzhou China Zhejiang University University of Illinois Urbana-Champaign Institute Zhejiang University Haining China School of Physics and Telecommunication Engineering Shaanxi Key Laboratory of Catalysis Shaanxi University of Technology Hanzhong723001 China State Key Laboratory of Information Photonics and Optical Communications School of Science Beijing University of Posts and Telecommunications Beijing100876 China Collaborative Innovation Center of Quantum Matter Beijing100871 China Beijing Key Laboratory for Magnetoelectric Materials and Devices Beijing100871 China Peking University Yangtze Delta Institute of Optoelectronics Nantong226000 China Key Laboratory for the Physics and Chemistry of Nanodevices Peking University Beijing100871 China

Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT indium oxide (In2O3) field-effect transistors (FETs) with thicknesses down to 0.4 nm exhibits extremely high drain current (104 μA/μm) and transconductance (4000 μS/μm). Here, we employ the ab initio quantum transport simulation to investigate the performance limit of sub-5-nm gate length (Lg) UT In2O3 FET. Based on the International technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, the scaling limit of UT In2O3 FETs can reach 2 nm in terms of on-state current, delay time, and power dissipation. The wide bandgap nature of UT In2O3 (3.15 eV) renders it a suitable candidate for ITRS low-power (LP) electronics with Lg down to 3 nm. Both the HP and LP UT In2O3 FETs exhibit superior energy-delay products as compared to other common 2D semiconductors such as monolayer MoS2 and MoTe2. Our study unveils the immense promise of UT In2O3 for both HP and LP device applications. Copyright © 2023, The Authors. All rights reserved.

关键词： Low power electronics

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Influence and regulation of amorphous layers on phonon transport at SiC/Si interface

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International Journal of Heat and Mass Transfer 2025年 252卷

作者： Yang Zhang Huiping Zhu Fanyu Liu Jun Zhong Weier Lu Chengcheng Wang Lei Wang Zhenping Wu Bo Li Institute of Microelectronics of the Chinese Academy of Sciences Beijing 100029 Beijing China State Key Laboratory of Information Photonics and Optical Communications & School of Science Beijing University of Posts and Telecommunications Beijing 100876 Beijing China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Beijing 100029 Beijing China North China Institute of Aerospace Engineering Langfang 065000 Langfang China University of Chinese Academy of Sciences Beijing 100049 Beijing China

silicon-on-silicon carbide (SiC/Si) wafers offer superior thermal transport, representing a critical technological approach to addressing heat dissipation challenges in traditional silicon-on-insulator (SOI) wafers. To improve interface quality, an amorphous layer of silicon oxide (a-SiO 2 ) or silicon (a-Si) is typically introduced between SiC and Si. Understanding the amorphous layer thermal transport mechanisms is crucial for effective thermal management in SiC/Si devices. Using non-equilibrium molecular dynamics (NEMD), we studied how a-SiO 2 and a-Si layers affect the thermal transport across the SiC/Si interface. Our results show that interfacial thermal conductance (ITC) decreases with increasing thicknesses of a-SiO 2 and a-Si. However, a significant regulatory effect of the a-SiO 2 layer on ITC is observed. Specifically, an a-SiO 2 layer of 0.3 nm can enhance the ITC to 994.7 MW/m 2 K, which is 54.4% higher than that of the Sharp-SiC/Si interfaces without amorphous layer. Analysis revealed that this enhancement stems from increased overlap in vibrational densities of states between SiC and Si and new transport channels created by high-frequency phonons converting to low-frequency phonons. In contrast, introducing an a-Si layer increases inelastic phonon scattering, significantly reducing ITC. This study also examines the temperature-dependent behavior of ITC for Sharp-SiC/Si and SiC/Si interfaces with varying a-SiO 2 and a-Si thicknesses. These findings offer theoretical support for the development of SiC/Si wafer materials with enhanced thermal management performance.

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A Generalized Bond Switching Monte Carlo method for amorphous structure generation

Computational Materials Today

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Computational Materials Today 2025年 6卷

作者： Zhengneng Zheng Fan Zheng Yu-Ning Wu Shiyou Chen Lin-Wang Wang Key Lab of Polar Materials and Devices (MOE) and Department of Electronics East China Normal University Shanghai China Key Laboratory of Optoelectronic Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing China School of Physical Science and Technology ShanghaiTech University Shanghai China School of Microelectronics and Key Laboratory of Computational Physical Sciences (MOE) Fudan University Shanghai China

Amorphous semiconductors are used in many electronic devices. For Si and other highly covalent bond systems, the amorphous structures can be generated using the bond switching method. However, for other non-covalent amorphous materials, it becomes challenging to generate their atomic structures. In this work, we extend the bond switching method to various complex and ionic systems. This method can be used to transform a general ionic crystalline structure to an amorphous structure (such as HfO 2 ), or generate the amorphous structures without the crystalline counterparts such as carbon black. We also introduce additional terms in the Bond Switching Monte Carlo process to control the porosity of the amorphous system, such as the amorphous In 2 O 3 . In addition, the amorphous structure can be generated to reproduce the experimental pair correlation function. We have investigated the changes in coordination numbers of the Bond Switching Monte Carlo process, and analyzed the usability of this method depending on the ionicity of the system.

关键词： Bond switching Monte Carlo Amorphous Valence force field Pair correlation function

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Unconventional S-P-D Hybridization in Modulating Frontier Orbitals of Carbonaceous Radicals on Pdbi Nanosheets for Efficient Ethanol Electrooxidation

SSRN

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SSRN 2022年

作者： Ji, Liang Che, Haiyun Qian, Ningkang Li, Junjie Luo, Sai Li, Xiao Wu, Xingqiao Xu, Qun Gong, Xuzhong Cui, Xinwei Zhang, Hui Yang, Deren State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Zhejiang310027 China Henan Institute of Advanced Technology Zhengzhou University Zhengzhou450003 China Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang Hangzhou311200 China Institute of Process Engineering Chinese Academy of Sciences Beijing100190 China Sunrise Power Co. Ltd Liaoning Dalian116024 China

Rational design of highly efficient ethanol electrooxidation catalysts requires modulation of their band structure, yet most of the understanding stops at either upshift or downshift of d-band center that facilitates only a portion of ethanol oxidation reaction (EOR) process. Herein, we take in-situ formed carbonaceous intermediates as an essential part in regulating the band structure of 2D catalysts for the whole EOR process. We found that, by alloying Bi into Pd nanosheets, d band of Pd upshifted, resulting in the enhanced adsorption ability of the catalyst. After the adsorption of intermediates, p band of Bi dragged down d-band of Pd and lifted up s and p orbitals of the adsorbed carbonaceous radicals, forming molecular orbitals that bridged their energy gaps and lowered the energy barriers of electron transfer in C1 pathway. This unconventional s-p-d hybridization offers Pd14.9Bi nanosheets exhibit high mass activity of 6.6 A/mgpd and C1 selectivity of 19.7%. © 2022, The Authors. All rights reserved.

关键词： Nanosheets

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Grain and stoichiometry engineering for ultra-sensitive perovskite X-ray detectors

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Journal of Materials Chemistry A 2021年第45期9卷 25603-25610页

作者： Yingrui Xiao Shanshan Jia Nuo Bu Nan Li Yucheng Liu Ming Liu Zhou Yang Shengzhong (Frank) Liu Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 China School of Microelectronics State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an 710049 China Dalian National Laboratory for Clean Energy Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian China

High sensitivity and a low detection limit are key figures-of-merit for high-energy radiation detectors. Previously, it was found that hot pressing is an effective method to fabricate large, thick compact pellets for highly sensitive X-ray detectors. Herein, we further studied the formation mechanism of a compact pellet and the impacts of the crystal size and stoichiometry of the perovskite pellet on the X-ray detection performance, which has rarely been investigated. It has been found that both heat and pressure are necessary for the formation of a compact pellet and the stoichiometry should be well controlled during the heat treatment. The impacts of temperature are two-fold: facilitating the growth of crystal grains and softening the grains. Pressure will induce the softened grains to form a compact pellet. The crystal grain size will be enlarged with the increase of temperature; however, as the temperature exceeds 150 °C, the atomic ratio of I to Pb will decrease with temperature, which will weaken the X-ray response of the pellet. Furthermore, by adjusting the I to Pb ratio by adding more CH₃NH₃I (MAI), the X-ray response will be improved, achieving a high sensitivity of 4.2 × 10⁵ μC Gy_air⁻¹ cm⁻² at a field of 6.58 V mm⁻¹. These findings provide insights into the use of grain engineering and composition engineering to design effective materials for high-performance X-ray detection.

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A Comprehensive Study on Crystal Structure, Phase Compositions of the BiVO4-LaVO4 Binary Dielectric Ceramic System and a Typical Design of Dielectric Resonator Antenna for C-Band Applications

SSRN

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SSRN 2024年

作者： Wu, Fang-Fang Zhou, Di Du, Chao Xu, Diming Shi, Zhong-Qi Darwish, Moustafa Adel Zhou, Tao Sun, Shi-Kuan Yao, Xiao-Gang Lin, Hui-Xing Zhang, Mei-Rong Liang, Qi-Xin Chen, Ya-Wei Chen, Guohua Jantunen, Heli Key Laboratory of Multifunctional Materials and Structures Ministry of Education School of Electronic Science and Engineering Xi’an Jiaotong University Shaanxi Xi'An710049 China Key Laboratory of Photovoltaic Materials School of Materials and New Energy Ningxia University Yinchuan750021 China Microelectronics Research Unit University of Oulu P.O. Box 4500 FI-90014 Finland State Key Laboratory for Mechanical Behaviour of Materials Xi’an Jiaotong University Xi’an710049 China Physics Department Faculty of Science Tanta University Al-Geish st. Tanta31527 Egypt School of Electronic and Information Engineering Hangzhou Dianzi University Hangzhou310018 China School of Material Science and Energy Engineering Foshan University Guangdong Foshan528000 China Key Laboratory of Inorganic Functional Material and Device Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai200050 China Shenzhen Microgate Technology Co. Ltd. Guang Dong Province Shen Zhen518118 China Electronical Information Materials and Devices Engineering Research Center of Ministry of Education Guangxi Key Laboratory of Information Materials and School Guangxi Guilin541004 China

Novel multi-component (Bi1-xLax)VO4 (BLVOx) (0.05 ≤ x ≤ 0.9) solid-solution ceramics crystal structures, phase compositions as well as its applications in the C-band dielectric resonator antenna have been designed and investigated. With the increased substitution of La3+, phase transitions among the monoclinic scheelite (m-BiVO4), tetragonal zircon (zt-(La,Bi)VO4) and monoclinic monazite (m-LaVO4), driven by the compositional changes, were detected. La3+ played an essential role in the optimization of the dielectric properties of BLVOx. The measured Q × f values at the microwave band are considerably larger around the range of compositions forming the zircon phase and reached the maximum value (12,800 GHz) at pure zircon phase (x = 0.5), demonstrating that the impact of zircon structure on the intrinsic loss should not be disregarded and is beneficial for low dielectric loss. Meanwhile, the [[EQUATION]] and TCF values could be tuned by regulating the concentration ratio of Bi3+/La3+ to obtain composites or solid solutions with appropriate [[EQUATION]] and near-zero TCF values. Additionally, a cylindrical dielectric resonator antenna (CDRA) of BVLO0.5 ceramic was designed with high simulated radiation efficiency (99.8%) and gain (4.58 dBi) at the center frequency (6.73 GHz), demonstrating its potential application in C-band because of its tunable permittivity and low-loss. © 2024, The Authors. All rights reserved.

关键词： Bismuth compounds

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Improvement of read disturb on TaOx-based RRAM cells with optimized pulse programming method 2

Improvement of read disturb on TaOx-based RRAM cells with op...

引用

2nd IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2019

作者： Li, Xiaoyan Yu, Jie Xu, Xiaoxin Luo, Qing Yuan, Peng Gao, Zhaomeng Ding, Qingting Lv, Hangbing Li, Yingtao Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China School of Physical Science and Technology Lanzhou University Lanzhou China

ISBN: (纸本)9781728151670

In this work, we proposed a reset pulse operation programming using multiple pulses with small width, which greatly improved the read disturb of the TaOx-based RRAM device. The robust read disturb was also observed after the devices baked at 90°C, 120°C and 150°C respectively. These results indicate that the proposed pulse optimization method improves the robustness of read disturb. The improvement can be attributed to the reduced energy consumed in the whole reset process. © 2019 IEEE.

关键词： RRAM

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Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure

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Physical Review B 2022年第7期106卷 075132-075132页

作者： W. Xie F. Du X. Y. Zheng H. Su Z. Y. Nie B. Q. Liu Y. H. Xia T. Shang C. Cao M. Smidman T. Takabatake H. Q. Yuan Center for Correlated Matter and School of Physics Zhejiang University Hangzhou 310058 China Deutsches Elektronen-Synchrotron (DESY) Notkestrasse 85 22607 Hamburg Germany Key Laboratory of Neutron Physics Institute of Nuclear Physics and Chemistry CAEP Mianyang 621900 People's Republic of China Key Laboratory of Polar Materials and Devices (MOE) School of Physics and Electronic Science East China Normal University Shanghai 200241 People's Republic of China Department of Quantum Matter AdSE Hiroshima University Higashi-Hiroshima 739-8530 Japan Zhejiang Province Key Laboratory of Quantum Technology and Device School of Physics Zhejiang University Hangzhou 310058 China State Key Laboratory of Silicon Materials Zhejiang University Hangzhou 310058 China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093 China

We have synthesized YbPdAs with the hexagonal ZrNiAl-type structure in which the Yb atoms form a distorted kagome sublattice in the hexagonal-basal plane. Magnetic, transport, and thermodynamic measurements indicate that YbPdAs is a low-carrier Kondo lattice compound with an antiferromagnetic transition at TN = 6.6 K, which is slightly suppressed in applied magnetic fields up to 9 T. The magnetic entropy at TN recovers only 33% of Rln2, the full entropy of the ground-state doublet of the Yb-ions. The resistivity displays a −lnT dependence between 30 and 15 K, followed by a broad maximum at Tcoh = 12 K upon cooling. Below Tcoh, the magnetoresistance changes from negative to positive, suggesting a crossover from single-ion Kondo scattering processes at intermediate temperatures to coherent Kondo lattice behaviors at low temperatures. Both the Hall resistivity measurements and band-structure calculations indicate a relatively low carrier concentration in YbPdAs. Our results suggest that YbPdAs could provide an opportunity for examining the interplay of Kondo physics and magnetic frustration in low carrier systems.

关键词： Frustrated magnetism Magnetic order Heavy-fermion systems Kagome lattice

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Unveiling the hybridization process in a quantum critical ferromagnet by ultrafast optical spectroscopy

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Physical Review B 2021年第18期103卷 L180409-L180409页

作者： Y. H. Pei Y. J. Zhang Z. X. Wei Y. X. Chen K. Hu Yi-feng Yang H. Q. Yuan J. Qi State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 611731 China Center for Correlated Matter and Department of Physics Zhejiang University Hangzhou 310058 China Institute for Advanced Materials Hubei Normal University Huangshi 435002 China Institute of Electronic and Information Engineering University of Electronic Science and Technology of China Dongguan 523808 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Science Beijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China Songshan Lake Materials Laboratory Dongguan 523808 China State Key Laboratory of Silicon Materials Zhejiang University Hangzhou 310058 China Zhejiang Province Key Laboratory of Quantum Technology and Device Department of Physics Zhejiang University Hangzhou 310058 China

We report the ultrafast optical pump-probe spectroscopy measurements on the recently discovered quantum critical ferromagnet CeRh6Ge4. Our experimental results reveal the two-stage development of the hybridization between localized f moments and conduction electrons with lowering temperature, as evidenced by (1) the presence of hybridization fluctuation for temperatures from ∼85K (T*) to ∼140K (T†), and (2) the emergence of collective hybridization below the coherence temperature, T*, marked by the opening of an indirect gap of 2Δ≈12meV. We also observe three coherent phonon modes being softened anomalously below T*, reflecting directly their coupling with the emergent coherent heavy electrons. Our findings establish the universal nature of fluctuation and coherence during the hybridization process in heavy fermion systems.

关键词： Kondo effect Phase transitions Phonons Strongly correlated systems Pump-probe spectroscopy

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Near-Infrared Heterojunction Field Modulated Phototransistors with Distinct Photodetection/Photostorage Switching Feature for Artificial Visuals

Research Square

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Research Square 2021年

作者： Han, Jiayue Du, Xiaoyang Zhang, Zhenghan He, Zeyu Xie, Runzhang Shan, Chongxin Tao, Silu Hu, Weida Yang, Ming Gou, Jun Wu, Zhiming Jiang, Yadong Wang, Jun School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science 500 Yutian Road Shanghai200083 China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and Engineering Zhengzhou University Zhengzhou450001 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China

With the rising demand of recording, computing and image capture, advanced optoelectronic detection, storage and logic devices are highly pursued. Nevertheless, multi-functional vision chip based on infrared detection and memory switching has never been demonstrated. Here, by utilizing the electronic extraction layer ZnO and face-on orientation of D-A, we exhibit the broadband visible to near-infrared photo-response and photo-storage characters on graphene phototransistor. Functions as photodetection and photo-storage can be switched with the variation of gate voltage. The device demonstrates high photo-responsivity up to 1.88×106 A/W at 895 nm corresponding detectivity of 4.8×1012 Jones. Importantly, the rewritable and switching infrared optoelectronic memory function can be achieved with good retention over 104 s. The both retinomorphic vision and memorial preprocessing in artificial visual are simultaneously realized by photodetection/photostorage switching property. Such nearly all-solution processes in our phototransistors may open up the path for the large-scale and easy manufacturing infrared multifunctional bio-optoelectronic device. © 2021, CC BY.

关键词： Graphene

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