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Physical origin investigation of the flatband voltage roll off for metal–oxide–semiconductor device with high-k/metal gate structure

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Journal of Semiconductors 2015年第9期36卷 71-74页

作者：韩锴王晓磊王文武 Department of Physics and Electronic Science Weifang University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The physical origin of the flatband voltage （VFB） roll off for a metal-oxide-semiconductor device with high-k/metal gate structure is studied from the viewpoint of energy band alignment at the high-k/Si interface because the thickness of SiO2 interlayer is thin enough to be ignored. The VFB roll off phenomenon is assigned to associate with the direct electron transfer between high-k and Si substrate. Quantitatively calculated simulation results based on this model are given considering different conditions.

关键词： high-k dielectric band alignment VFB roll off

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Electric dipole formation at high-k dielectric/SiO_2 interface

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Journal of Semiconductors 2015年第3期36卷 150-152页

作者：韩锴王晓磊杨红王文武 Department of Physics and Electronic Science Weifang University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

The formation of an electric dipole at the high-k/SiO2 interface is quantitatively analyzed. The band lineups and physical origin of dipole formation at the high-k/SiO2 interface are explained by the dielectric contact induced gap states （DCIGS）. The charge neutrality level （CNL） of the DCIGS, which represents a distribution of high-k and SiO2 contact induced gap states, is utilized to study the dipole moment. The charge transfer due to different CNLs of high-k and SiO2 is considered as the dominant origin of dipole formation. The theoretically calculated dipole strengths ofhigh-k/SiO2 systems based on this model are in good agreement with the experimental data.

关键词： high-k dielectric band alignment interface dipole

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Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)

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Advanced Materials 2018年第14期30卷

作者： Xiaolong Zhao Jun Ma Xiangheng Xiao Qi Liu Lin Shao Di Chen Sen Liu Jiebin Niu Xumeng Zhang Yan Wang Rongrong Cao Wei Wang Zengfeng Di Hangbing Lv Shibing Long Ming Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam Application Wuhan University Wuhan 430072 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China Department of Nuclear Engineering Texas A&M University College Station TX 77843 USA Materials Science and Technology Division Los Alamos National Laboratory Los Alamos NM 87545 USA

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

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Chinese Physics Letters 2015年第12期32卷 109-112页

作者：申华军唐亚超彭朝阳邓小川白云王弋宇李诚瞻刘可安刘新宇 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 Microwave Device and IC Department Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 Zhuzhou CSR Times Electric Co. LTD Zhuzhou 412001

The fabrication and characterization of 1700 V 7 A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors （VDMOSFETs） are reported. The drift layer is 17μm in thickness with 5 × 10^15 cm^-3 n-type doping, and the channel length is 1μm. The MOSFETs show a peak mobility of 17cm2/V.s and a typical threshold voltage of 3 V. The active area of 0.028cm2 delivers a forward drain current of 7A at Vcs = 22 V and VDS= 15 V. The specific on-resistance （Ron,sv） is 18mΩ.cm2 at VGS= 22 V and the blocking voltage is 1975 V （IDS 〈 lOOnA） at VGS = 0 V.

关键词： SiC Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors VGS VDS MOSFET

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Inversion domain boundary induced stacking and bandstructure diversity in bilayer MoSe2

arXiv

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arXiv 2017年

作者： Hong, Jinhua Wang, Cong Liu, Hongjun Ren, Xibiao Chen, Jinglei Wang, Guanyong Jia, Jinfeng Xie, Maohai Jin, Chuanhong Ji, Wei Yuan, Jun Zhang, Ze Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices Department of Physics Renmin University of China Beijing100872 China State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University HangzhouZhejiang310027 China Physics Department University of Hong Kong Pokfulam Road Hong Kong Department of Physics and Astronomy Shanghai Jiaotong University 800 Dongchuan Road Shanghai200240 China Department of Physics University of York Heslington YorkYO10 5DD United Kingdom Institute of Functional Crystals Tianjin University of Technology Tianjin300384 China

Interlayer rotation and stacking were recently demonstrated as effective strategies for tuning physical properties of various two-dimensional materials. The latter strategy was mostly realized in hetero-structures with continuously varied stacking orders, which obscure the revelation of the intrinsic role of a certain stacking order in its physical properties. Here, we introduce inversion-domain-boundaries into molecular-beam-epitaxy grown MoSe2 homo-bilayers, which induce uncommon fractional lattice translations to their surrounding domains, accounting for the observed diversity of large-area and uniform stacking sequences. Low-symmetry stacking orders were observed using scanning transmission electron microscopy and detailed geometries were identified by density functional theory. A linear relation was also revealed between interlayer distance and stacking energy. These stacking sequences yield various energy alignments between the valence states at the Γ and K points of the Brillouin zone, showing stacking dependent bandgaps and valence band tail states in the measured scanning tunneling spectroscopy. These results may benefit the design of two-dimensional multilayers with manipulable stacking orders. Copyright © 2017, The Authors. All rights reserved.

关键词： Transition metals

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fT D 260 GHz and fmax D 607 GHz of 100-nm-gate In0:52Al0:48As/In0:7Ga0:3As HEMTs with *** D 1441 mS/mm

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Journal of Semiconductors 2016年第7期37卷

作者： Wang, Qing Ding, Peng Su, Yongbo Ding, Wuchang Asif, Muhammad Wu, Tang Zhi, Jin State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China Department of Microwave IC Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

The 100-nm T-gate InP-based InAlAs/InGaAs high electron mobility transistors (HEMTs) with the width of 2 X 50 μm and source–drain space of 2.4 μm are systematically investigated. High indium (In) composition of InGaAs layer was adopted to acquire the higher mobility of the channel layer. A sandwich structure was adopted to optimize the cap layers and produce a very low contact resistance. The fabricated devices exhibit extrinsic maximum transconductance Gm:max D 1441 mS/mm, cutoff frequency fT D 260 GHz, and maximum oscillation frequency fmax D 607 GHz. A semi-empirical model has been developed to precisely fit the low-frequency region of scattering parameters (S parameters) for InP-based HEMTs. Excellent agreement between measured and simulated S parameters demonstrates the validity of this approach. © 2016 Chinese institute of Electronics

关键词： High electron mobility transistors

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Corrections to “A 3-D Assembled silicon-Embedded Transformer for 10-MHz, Ultra-High-Isolation, Compact Chip-to-Chip Power Transfer” [Mar 17 356-358]

IEEE Electron Device Letters

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IEEE Electron Device Letters 2017年第5期38卷 689-689页

作者： Rongxiang Wu Niteng Liao Xiangming Fang Jian Cai Qian Wang Johnny K. O. Sin State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Chengdu CoilEasy Technologies Co. Ltd. Chengdu China Tsinghua National Laboratory for Information Science and Technology Institute of Microelectronics Tsinghua University Beijing China Institute of Microelectronics Tsinghua University Beijing China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong

In the above paper [1] , the seventh reference “R. Wu, J. K. O. Sin, and S. Y. Hui, ‘A novel silicon-embedded coreless transformer for isolated DC-DC converter application,’ in Proc. IEEE 23rd Int. Symp. Power Semiconductor devices ICs , Hong Kong, China, May 2015, pp. 297–300, doi: 10.1109/ISPSD.2011.5890863” is incorrect. The correct reference is “R. Wu, N. Liao, X. Fang, and J. K. O. Sin, ‘A novel 3D transformer for ultra-compact signal isolation,’ in Proc. IEEE 27th Int. Symp. Power Semiconductor devices ICs , Hong Kong, China, May 2015, pp. 297-300, doi: 10.1109/ISPSD.2015.7123448.”

关键词： silicon compounds Isolation technology Transformers Bonding processes Coils Elemental semiconductors

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MIM capacitors with various Al_2O_3 thicknesses for GaAs RFIC application

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Journal of Semiconductors 2015年第5期36卷 37-40页

作者：周佳辉常虎东刘洪刚刘桂明徐文俊李琦李思敏何志毅李海鸥 Guangxi Experiment Center of Information Science Guilin University of Electronic Technology Microwave Device and IC Department Institute of MicroelectronicsChinese Academy of Sciences State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

The impact of various thicknesses of Al2O3 metal-insulator-metal （MIM） capacitors on direct current and radio frequency （RF） characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-a of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.

关键词： MIM capacitors Al2O3 thickness

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Preface for the special issue on fabrication and application of functional materials

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Frontiers of Materials science 2015年第2期9卷 101-102页

作者： Jiang WU Zhiming M. WANG State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China Chengdu 610054 China Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054 China

fabrication of frontier materials, investigation of new properties of emerging materials, and engineering new functionality in these materials have been one of the top priority research field forabrication of frontier materials, investigation of new properties of emerging materials, and engineering new functionality in these materials have been one of the top priority research field forexploration basic science as well as development of next-generation technology in the twenty-first century. The significant progress made in materials science in the last a few decades enabled novel processing and material characterization methodologies. Artificially tailored materials at nanoscale or even molecular level are now the key drivers in developing many cutting-edge technologies and have attracted a lot of attention in many fields, including physics, chemistry, engineering, biology, and so on. In each of these fields, progress has been aided by a continuous development of novel materials. On the other hand, research and development of new materials as well as their applications have become interdisciplinary activity demanding collaborative researches between material scientists, physicists, chemists, engineers, and biologists.

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Effect of annealing on the characteristics of Ti/Al ohmic contacts to p-Type 4H-SiC

Effect of annealing on the characteristics of Ti/Al ohmic co...

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European Conference on silicon Carbide & Related Materials (ECSCRM)

作者： Yi-Dan Tang Hua-Jun Shen Xu-Fang Zhang Guo Fei Bai Yun Zhao-Yang Peng Xin-Yu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China School of Physical Science and Technology Lanzhou University Lanzhou China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of china Chengdu China

Ti/Al contacts deposited on p-type epilayer doped with Al at 2×10 19 cm -3 are reported. The current-voltage curves of Ti/Al contacts annealed at different temperatures from 800 to 1000 °C were measured, which provided the specific contact resistances (SCRs) of 6.59×10 -5 Ω/cm 2 and 7.81×10 -5 Ω/cm 2 after annealing at 900°C for 5min and 950°C for 2min, respectively. The microstructures of Ti/Al contact on P-type 4H-SiC were investigated by X-ray diffraction (XRD). The results of XRD show that the phases of Ti 3 SiC 2 was formed at the metal/SiC interface after annealing, which could be effective to ohmic contacts on P-type 4H-SiC. The quantitative phase analysis were also discussed, which show that the phase composition of Ti 3 SiC 2 is key factor for low resistance to P-type 4H-SiC. Moreover, simulations proved that the gradual Ti 3 SiC 2 ISL reduces or eliminates the effective barrier height at the metal/Ti 3 SiC 2 /p-type and may also contribute to low contact resistivity.

关键词： Ohmic contacts silicon carbide Annealing X-ray scattering Temperature measurement Microstructure Metals

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