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Graphene Films: Synthesis of Graphene Films on Copper Foils by Chemical Vapor Deposition (Adv. Mater. 29/2016)

Advanced Materials 2016年第29期28卷 6264-6264页

作者： Li, Xuesong Colombo, Luigi Ruoff, Rodney S. State Key Laboratory of Electronic Thin Films and Integrated Devices and School of Microelectronics and Solid State Electronics University of Electronic Science and Technology of China Chengdu610054 China Analog Technology Development Texas Instruments 13121 TI Blvd MS-367 DallasTX75243 United States Center for Multidimensional Carbon Materials Institute of Basic Science and Department of Chemistry Ulsan National Institute of Science and Technology Ulsan689798 Korea Republic of

Synthesis of graphene films on copper foils is discussed by X. Li, L. Colombo, and R. S. Ruoff on page 6247. Graphene can grow on metal substrates by chemical vapor deposition of hydrocarbons. Hydrocarbons crack on a metal surface, nucleate, grow, and finally merge to form a continuous graphene film. Copper is one of the best candidates for graphene growth due to the advantages of good control over the graphene thickness, the growth of high-quality graphene, and the ease for graphene transfer, and has been widely used for production of large-area graphene films in both academia and industry.◆ (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

关键词： graphene chemical vapor deposition segregation precipitation surface adsorption

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Effect of reaction inhibitors on synthesized silver nanostructures via solvothermal method

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key Engineering Materials 2015年 645卷 297-302页

作者： Xie, Hui Xiong, Nana Liu, Jianzhuang Zhao, Yuzhen Wang, Yuehui Department of Chemistry and Biology University of Electronic Science and Technology of China Zhongshan Institute Zhong Shan528402 China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology Cheng Du610054 China Department of Materials Science and Engineering Tsinghua University Beijing100084 China

In this paper, silver nanostructures were synthesized via a solvothermal method by reducing silver nitrate with ethylene glycol in the presence of poly (vinylpyrrolidone) and using NaCl, MgCl2, AlCl3, FeCl3, Fe2(SO4)3, NaOH, NaBr and Na2S as reaction inhibitor, respectively. Characteristics of the as-prepared silver nanostructures were studied by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-visible (UV-vis) absorption spectrum. It is found that the mixture of nanoparticles and nanorods and nanowires can be observed in the AlCl3 and NaOH systems, the nanorods as main products can be obtained in the MgCl2 and NaCl and Fe2(SO4)3 systems, the large scale silver nanowires as main products can be obtained in the FeCl3 and Na2S systems, especially in the Na2S system, silver nanowires are very long and curved. The results indicated the reasons of the effect of the reaction inhibitors on the morphologies of silver nanostructures depend on the solubility product constant of silver salt which formed with silver ion and inhibitor anion ion in the initial stage and the properties of metal cationic ion of inhibitor. The smaller solubility product constant of silver salt or the presence of Fe3+ or low valence metal ion greatly facilitate the formation of one-dimensional silver nanostructures, especially to nanowires. © (2015) Trans Tech Publications, Switzerland.

关键词： Silver nanoparticles

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Sintering behavior and electrical property of surface treated silver nanoparticle for electronic application

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key Engineering Materials 2015年 645卷 157-162页

作者： Xie, Hui Xiong, Nana Zhao, Yuzhen Wang, Yuehui Department of Chemistry and Biology University of Electronic Science and Technology of China Zhongshan Institute Zhong Shan528402 China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology Cheng Du610054 China Department of Materials Science and Engineering Tsinghua University Beijing100084 China

Large-scale silver nanoparticles with fine dispersion and narrow size distribution were synthesized by reducing silver nitrate with sodium borohydride and sodium citrate and using poly (vinylpyrrolidone) as an adsorption agent in the ethanol solution. The sintering behavior and electrical properties of silver nanoparticles treated with and without glutaric acid were studied. Morphology studies showed that the treated silver nanoparticles obviously agglomerated and began to sinter at 200 0C and the sintering temperature is higher at least 50 degrees than that of the untreated silver nanoparticles The treated silver nanoparticles as fillers of electronically conductive adhesives (ECAs) is more advantageous to the increase of the conductivity. Otherwise, only in the conditions of the appropriate sintering temperature and loading of silver nanoparticles, the high conductivity of the ECAs was obtained. The effect of the treated silver nanoparticles on the electrical properties contributes to the surface activation and sintering behavior. © (2015) Trans Tech Publications, Switzerland.

关键词： Surface treatment

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Correction: High quality graphene films with a clean surface prepared by an UV/ozone assisted transfer process

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Journal of Materials Chemistry C 2017年第15期5卷 3855-3855页

作者： Hongyan Sun Ding Chen Yuming Wu Qilong Yuan Liangchao Guo Dan Dai Kuan W. A. Chee Yang Xu Pei Zhao Nan Jiang Cheng-Te Lin College of Materials Science and Engineering Hunan University Changsha 410082 P. R. China Key Laboratory of Marine Materials and Related Technologies Zhejiang Key Laboratory of Marine Materials and Protective Technologies Ningbo Institute of Materials Technology and Engineering (NIMTE) Chinese Academy of Sciences Ningbo 315201 China Department of Electrical and Electronic Engineering University of Nottingham Ningbo 315100 China Engineering and State Key Laboratory of Silicon Materials Zhejiang University Hangzhou Zhejiang China Institute of Applied Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province Zhejiang University Hangzhou 310012 P. R. China

Correction for ‘High quality graphene films with a clean surface prepared by an UV/ozone assisted transfer process’ by Hongyan Sun et al., J. Mater. Chem. C, 2017, 5, 1880–1884.

Correction for ‘High quality graphene films with a clean surface prepared by an UV/ozone assisted transfer process’ by Hongyan Sun et al., J. Mater. Chem. C, 2017, 5, 1880–1884.

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2D Materials: C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties (Adv. Mater. 16/2017)

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Advanced Materials 2017年第16期29卷

作者： Siwei Yang Wei Li Caichao Ye Gang Wang He Tian Chong Zhu Peng He Guqiao Ding Xiaoming Xie Yang Liu Yeshayahu Lifshitz Shuit‐Tong Lee Zhenhui Kang Mianheng Jiang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. China Department of Physics and State Key Laboratory of Surface Physics Fudan University Shanghai 200433 China Center of Electron Microscopy and State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 P. R. China School of Physical Science and Technology Shanghai Tech University Shanghai 200031 P. R. China Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices Institute of Functional Nano and Soft Materials (FUNSOM) Soochow University Suzhou 215123 P. R. China Department of Materials Science and Engineering Technion Israel Institute of Technology Haifa 3200003 Israel

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Large-scale solvent-thermal synthesis of graphene/magnetite/conductive oligomer ternary composites for microwave absorption

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science China Materials 2015年第7期58卷 566-573页

作者：何东旭邱瑶李林玲赵睿薛卫东 Institute of Applied Electrochemistry State Key Laboratory of Electronic Thin Films and Integrated Devices Institute of Microelectronics and SolidState Electronics University of Electronic Science and Technology of China

Nanocomposites exhibiting high electric conductivity and high saturation magnetization were synthesized in bulk using a solvent-thermal route, which combined the hybridization growth of Fe3O4 nanoparticles, graphene oxide, and a conductive oligomer in one step. The hybrid spheres with diameters of 100–300 nm(mostly approximately 200 nm) consisted of a homogenous phase without obvious interfaces between the ternary components. The electric conductivity of the hybrid material was greatly improved after heat treatment at high temperature. Because of the interfacial polarization and good separation property due to its magnetism properties, the interpenetrating nature of the materials yielded good synergistic effects on the electromagnetic wave absorbing properties. The multi-frequency reflection band covering the C band and Ku band with a maximum reflection loss of-45 d B for a thickness of 5 mm is promising for lightweight and strong electromagnetic attenuation applications.

关键词：四氧化三铁偏铁酸亚铁石墨烯

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A picoampere-sensitivity readout circuit for nanosensor array

A picoampere-sensitivity readout circuit for nanosensor arra...

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作者： Wang, X.Z. Lei, X. Zhang, X.C. Wu, S.Y. Liu, C.J. Luo, M.C. Li, Y.D. State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China School of Microelectronics and Solid State Electronics University of Electronic Science and Technology of China Chengdu China 44th Institute of China Electronics Technology Group Corporation Chongqing China Technical Institute of Physics and Chemistry CAS Urumqi China

This paper presents a picoampere-sensitivity readout integrated circuit (ROIC) based on capacitive transimpedance amplifier (CTIA) for hybrid nanosensor. The proposed ROIC utilizes CTIA structure to achieve stable sensor bias. Telescopic op-amp is employed to further minimize sensor bias variation according to theoretical analysis. A 32 × 32 readout circuit array is fabricated using 0.5 μm 2P3M CMOS technology to verify the design. Simulation and experiment results show that the proposed readout circuit can detect current as low as 4 pA while maintaining output linearity higher than 99.07% and bias variation lower than 0.013‰. Copyright © 2015 American Scientific Publishers All rights reserved.

关键词： Operational amplifiers

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Analysis of flatband voltage shift of metal/high-k/SiO_2/Si stack based on energy band alignment of entire gate stack

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Chinese Physics B 2014年第11期23卷 536-540页

作者：韩锴王晓磊徐永贵杨红王文武 Department of Physics and Electronic Science Weifang University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFB of TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.

关键词： metal gate high-k dielectric band alignment Vfb shift

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Nanopillar-forest based surface-enhanced Raman scattering substrates

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science China(Information sciences) 2014年第8期57卷 230-237页

作者： BAO AiDa MAO HaiYang XIONG JiJun CHEN ZhuoJie OU Wen CHEN DaPeng MOE Key Laboratory of Instrumentation Science & Dynamic Measurement North University of China School of Information and Electronics Beijing Institute of Technology Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of MicroelectronicsPeking University

In this work,nanopillar-forest based surface-enhanced Raman scattering substrates were fabricated using a novel *** key technique of the approach is taking advantage of convexes on Poly-Si surfaces as support structures in sidewall *** tip-diameters of the fabricated nanopillars are from 5 to 10 nm,heights are of several microns,and density of the nanopillar-based forests is around 20/μ*** these nanopillar forests,there are plenty of nanoscale *** covered with a thin layer of noble metal,the nanopillar forests exhibit a high SERS-active *** measurement results demonstrate that the nanopillar-forest based SERS substrates have an enhancement factor of an order of 4.62×*** is expected that such SERS substrates may have applications in biological monitoring and chemical detection.

关键词： surface-enhanced Raman scattering(SERS) nanopillar forests sidewall technology Poly-Si films electromagnetic field distributions

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Hysteresis analysis of graphene transistor under repeated test and gate voltage stress

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Journal of Semiconductors 2014年第9期35卷 45-49页

作者：杨杰贾昆鹏粟雅娟陈阳赵超 Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences College of Science China University of Petroleum

The current transport characteristic is studied systematically based on a back-gate graphene field effect transistor, under repeated test and gate voltage stress. The interface trapped charges caused by the gate voltage sweep process screens the gate electric field, and results in the neutral point voltage shift between the forth and back sweep direction. In the repeated test process, the neutral point voltage keeps increasing with test times in both forth and back sweeps, which indicates the existence of interface trapped electrons residual and accumulation. In gate voltage stress experiment, the relative neutral point voltage significantly decreases with the reducing of stress voltage, especially in -40 V, which illustrates the driven-out phenomenon of trapped electrons under negative voltage stress.

关键词： graphene FET interface trap electrical measurement repeated test stress

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