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检索条件"机构=Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices"
532 条 记 录,以下是41-50 订阅
排序:
A Novel Trench IGBT with Built-in Temperature Sensing  3
A Novel Trench IGBT with Built-in Temperature Sensing
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3rd International Symposium on Semiconductor and Electronic technology, ISSET 2024
作者: Zhao, Yishang Li, Zehong Wang, Tongyang Zhou, Ziyi Pi, Meng Zheng, Yige Li, Wei Wan, Li Yang, Yang Qin, Haifeng University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China China Resources Microelectronics Ltd. Chongqing China
An innovative trench insulated gate bipolar transistor (IGBT) with temperature sensing is proposed for effective on-line monitoring of the junction temperature. The temperature sensing is consisted by the P doped poly... 详细信息
来源: 评论
Preface to Special Issue on Optoelectronic Neuromorphic devices
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Journal of Semiconductors 2025年 第2期46卷 2-4页
作者: Zhenyi Ni Zhongqiang Wang Jia Huang Xiaodong Pi State key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Shangyu Institute of Semiconductor Materials Shaoxing 312300China Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education Northeast Normal UniversityChangchun 130024China School of Materials Science and Engineering&National Key Laboratory of Autonomous Intelligent Unmanned Systems Tongji UniversityShanghai 201804China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJ-UHangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou 311200China
The rapid advancement of artificial intelligence(AI),recognized with Nobel Prizes in both Physics and Chemistry in 2024,has been revolutionizing countless aspects of modern life,driving innovations across diverse fiel... 详细信息
来源: 评论
Super retina TFT based full color microLED display via laser mass transfer
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science China(Information sciences) 2024年 第11期67卷 5-19页
作者: Xu YANG Jinchai LI Xuhui PENG Chunfeng ZHAO Chao CHEN Xiaowei ZHANG Jinliang LIN Donghua LI Yuefen CHEN Zhaoxia BI Feng QIN Cheng LI Kai HUANG Junyong KANG Rong ZHANG Fujian Key Laboratory of Semiconductor Materials and Applications CI Center for OSEDEngineering Research Center of Micro-nano Optoelectronic Materials and Devices Ministry of EducationDepartment of Physics Xiamen University Future Display Institute of Xiamen Tianma Microelectronics Co. Ltd. School of Electronic Science and Engineering Xiamen University Tianma Advanced Display Technology Institute (Xiamen) Co. Ltd.
MicroLED display is considered one of the most promising technologies for next-generation displays. However, the high manufacturing cost has been a major obstacle to its accessibility to the general consumer market, a... 详细信息
来源: 评论
A Fully BEOL-compatible (300°C Annealing) IGZO FeFET with Ultra-high Memory Window (10V) and Prominent Endurance (109)
A Fully BEOL-compatible (300°C Annealing) IGZO FeFET with U...
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2024 IEEE International Electron devices Meeting, IEDM 2024
作者: Xu, Pan Jiang, Pengfei Yang, Yang Peng, Xueyang Wei, Wei Gong, Tiancheng Wang, Yuan Long, Xiao Niu, Jiebin Xu, Zhongguang Zhu, Chenxin Wu, Zhenhua Luo, Qing Liu, Ming Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing China Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China University of Science and Technology of China Anhui Hefei China
HfO2-based FeFET paves the way for the next generation NVM thecnology, however, demands for high memory window (MW) and roubust reliability (especially the endurance) cannot be combined in the current reported devices... 详细信息
来源: 评论
Highly efficient perovskite solar cells by building 2D/3D perovskite heterojuction in situ for interfacial passivation and energy level adjustment
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science China Chemistry 2023年 第2期66卷 449-458页
作者: Yaoyao Huang Zhangyu Yuan Jia Yang Shungao Yin Aihui Liang Gang Xie Chuizheng Feng Zhisheng Zhou Qifan Xue Yang Pan Fei Huang Yiwang Chen National Engineering Research Center for Carbohydrate Synthesis/Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education Jiangxi Normal UniversityNanchang330022China College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry(IPEC) Nanchang UniversityNanchang330031China State Key Laboratory of Luminescent Materials and Devices Institute of Polymer Optoelectronic Materials and DevicesSchool of Materials Science and EngineeringSouth China University of TechnologyGuangzhou510640China
Passivating the interfacial defects and reducing the interfacial non-radiative recombination losses are the keys to improving the photovoltaic performance of three-dimensional(3D)perovskite solar cells(PVSCs).Stacking... 详细信息
来源: 评论
Trigger mechanism of PDSOI NMOS devices for ESD protection operating under elevated temperatures
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Chinese Physics B 2021年 第7期30卷 613-618页
作者: Jia-Xin Wang Xiao-Jing Li Fa-Zhan Zhao Chuan-Bin Zeng Duo-Li Li Lin-Chun Gao Jiang-Jiang Li Bo Li Zheng-Sheng Han Jia-Jun Luo Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100029China
Trigger characteristics of electrostatic discharge(ESD)protecting devices operating under various ambient temperatures ranging from 30℃to 195℃are *** studied ESD protecting devices are the H-gate NMOS transistors fa... 详细信息
来源: 评论
A Novel Triggered Voltage Sensing Structure for High Voltage IGBT  17
A Novel Triggered Voltage Sensing Structure for High Voltage...
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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024
作者: Yang, Yang Li, Ze-Hong Dong, Li-Hang Li, Wei Jia, Peng-Fei Yang, Zhi-Yu Wan, Li Zhao, Yi-Shang Li, Lu-Ping Xia, Zi-Ming Wang, Tong-Yang Limited Chongqing401331 China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chengdu610054 China
A novel triggered voltage sensing structure for high voltage insulated gate bipolar transistor (IGBT) is proposed and simulated in this paper. The voltage sensor is characterized by a controllable starting point for t... 详细信息
来源: 评论
A Novel Voltage Sensor with Composite Trench Structure for High Voltage IGBT  17
A Novel Voltage Sensor with Composite Trench Structure for H...
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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024
作者: Yang, Yang Li, Ze-Hong Dong, Li-Hang Li, Wei Jia, Peng-Fei Yang, Zhi-Yu Wan, Li Zhao, Yi-Shang Wang, Tong-Yang Xia, Zi-Ming University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Limited Chongqing401331 China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chengdu610054 China
A novel voltage sensor with composite trench structure for high voltage IGBT (insulated gate bipolar transistor) is proposed and numerically investigated in this paper. Based on the capacitance matching between the pa... 详细信息
来源: 评论
Influence of Interfacial Layers and High-k Post Dielectric Annealing On the Characteristics of MOS devices
Influence of Interfacial Layers and High-k Post Dielectric A...
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2023 China Semiconductor technology International Conference, CSTIC 2023
作者: Sang, Guanqiao Zhang, Qingzhu Yin, Huaxiang Li, Junfeng Qin, Xulei Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China ChangChun University of Science and Technology Changchun130022 China
In this paper, investigation of the effects of Post Dielectric Annealing (PDA) and Interfacial Layers (IL) on the characteristics of Metal-Oxide-Semiconductor (MOS) devices. Based on the traditional MOS fabrication pr... 详细信息
来源: 评论
Optimizing Flash Memory Towards Storage-Class Memory (SCM) Applications  17
Optimizing Flash Memory Towards Storage-Class Memory (SCM) A...
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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024
作者: Guo, Xinyi Feng, Yang Liu, Jing Zhang, Junyu Zhan, Xuepeng Wu, Jixuan Chen, Jiezhi School of Information Science and Engineering Shandong University Qingdao China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing China Neumem Co. Ltd Hefei China
Aiming at the applications of flash memories as storage-class memory (SCM), we did a comprehensive study on the operation schemes of flash cells for fast Program/Erase (PE) cycling, high endurance and read stabilities... 详细信息
来源: 评论