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AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

Chinese Physics B 2014年第2期23卷 448-451页

作者：仇洪波李惠琪刘邦武张祥沈泽南 School of Materials Science and Engineering Shandong University of Science and Technology Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10^12 cm%-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software （PC1D）. With AlOx passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.

关键词： AlOx atomic layer deposition p-type negative charge density solar cell analyzing software

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Effect of reaction inhibitors on synthesized silver nanostructures via solvothermal method

Effect of reaction inhibitors on synthesized silver nanostru...

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16th Annual Conference and 5th International Conference on Chinese Society of Micro-Nano technology, CSMNT 2014

作者： Xie, Hui Xiong, Nana Liu, Jianzhuang Zhao, Yuzhen Wang, Yuehui Department of Chemistry and Biology University of Electronic Science and Technology of China Zhongshan Institute Zhong Shan528402 China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology Cheng Du610054 China Department of Materials Science and Engineering Tsinghua University Beijing100084 China

ISBN: (纸本)9783038354628

In this paper, silver nanostructures were synthesized via a solvothermal method by reducing silver nitrate with ethylene glycol in the presence of poly (vinylpyrrolidone) and using NaCl, MgCl2, AlCl3, FeCl3, Fe2(SO4)3, NaOH, NaBr and Na2S as reaction inhibitor, respectively. Characteristics of the as-prepared silver nanostructures were studied by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-visible (UV-vis) absorption spectrum. It is found that the mixture of nanoparticles and nanorods and nanowires can be observed in the AlCl3 and NaOH systems, the nanorods as main products can be obtained in the MgCl2 and NaCl and Fe2(SO4)3 systems, the large scale silver nanowires as main products can be obtained in the FeCl3 and Na2S systems, especially in the Na2S system, silver nanowires are very long and curved. The results indicated the reasons of the effect of the reaction inhibitors on the morphologies of silver nanostructures depend on the solubility product constant of silver salt which formed with silver ion and inhibitor anion ion in the initial stage and the properties of metal cationic ion of inhibitor. The smaller solubility product constant of silver salt or the presence of Fe3+ or low valence metal ion greatly facilitate the formation of one-dimensional silver nanostructures, especially to nanowires. © (2015) Trans Tech Publications, Switzerland.

关键词： Silver nanoparticles

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Sintering behavior and electrical property of surface treated silver nanoparticle for electronic application

Sintering behavior and electrical property of surface treate...

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16th Annual Conference and 5th International Conference on Chinese Society of Micro-Nano technology, CSMNT 2014

作者： Xie, Hui Xiong, Nana Zhao, Yuzhen Wang, Yuehui Department of Chemistry and Biology University of Electronic Science and Technology of China Zhongshan Institute Zhong Shan528402 China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology Cheng Du610054 China Department of Materials Science and Engineering Tsinghua University Beijing100084 China

ISBN: (纸本)9783038354628

Large-scale silver nanoparticles with fine dispersion and narrow size distribution were synthesized by reducing silver nitrate with sodium borohydride and sodium citrate and using poly (vinylpyrrolidone) as an adsorption agent in the ethanol solution. The sintering behavior and electrical properties of silver nanoparticles treated with and without glutaric acid were studied. Morphology studies showed that the treated silver nanoparticles obviously agglomerated and began to sinter at 200 0C and the sintering temperature is higher at least 50 degrees than that of the untreated silver nanoparticles The treated silver nanoparticles as fillers of electronically conductive adhesives (ECAs) is more advantageous to the increase of the conductivity. Otherwise, only in the conditions of the appropriate sintering temperature and loading of silver nanoparticles, the high conductivity of the ECAs was obtained. The effect of the treated silver nanoparticles on the electrical properties contributes to the surface activation and sintering behavior. © (2015) Trans Tech Publications, Switzerland.

关键词： Surface treatment

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Optimization of ohmic contact for InP-based transferred electronic devices

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Journal of Semiconductors 2014年第3期35卷 158-162页

作者：武德起丁武昌杨姗姗贾锐金智刘新宇 Key Laboratory of Microelectronics Devices & Integrated Technology Microwave Devices and Integrated Circuits Department Institute of Microelectronics Chinese Academy of Sciences School of Physics and Electrical Information Science Ningxia University

The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.210 7 cm2was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425 ℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 51018cm 3in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380 ℃.

关键词： circular transmission line model specific contact resistance InP transferred electronic devices differential negative resistance

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Radio-frequency transistors from millimeter-scale graphene domains

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Chinese Physics B 2014年第11期23卷 470-475页

作者：魏子钧傅云义刘竞博王紫东贾越辉郭剑任黎明陈远富张酣黄如张兴 Institute of Microelectronics Peking University State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China School of Physics Peking University

Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.

关键词： millimeter-scale graphene domain radio-frequency transistor cut-off frequency maximum oscil-lation frequency

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Interface states in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

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Chinese Physics B 2014年第5期23卷 505-509页

作者：廖雪阳张凯曾畅郑雪峰恩云飞来萍郝跃 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory the 5th Electronics Research Institute of the Ministry of Industry and Information Technology Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/A1GaN/GaN metal-oxide-semiconductor （MOS） structures. Two types of device structures, namely, the recessed gate structure （RGS） and the normal gate structure （NGS）, are studied in the experiment. Interface trap parameters includ-ing trap density Dit, trap time constant ιit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching （RIE）.

关键词： Al2O3/AlGaN/GaN interface trap states conductance capacitance

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Memory devices: Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory (Adv. Mater. 48/2016)

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Advanced Materials 2016年第48期28卷

作者： Sen Liu Nianduan Lu Xiaolong Zhao Hui Xu Writam Banerjee Hangbing Lv Shibing Long Qingjiang Li Qi Liu Ming Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China College of Electronic Science and Engineering National University of Defense Technology Changsha 410073 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China

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Low Temperature Processed Efficient Planar Heterojunction Perovskite Solar Cell

Low Temperature Processed Efficient Planar Heterojunction Pe...

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第二届新型太阳能电池学术研讨会

作者： Zhongwei Wu Zhongcheng Yuan Weidong Xu Yatao Zou Sai Bai Yizheng Jin Baoquan Sun Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Institute of Functional Nano & Soft Materials (FUNSOM) and Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University State Key Laboratory of Silicon Materials Cyrus Tang Center for Sensor Materials and Applications Department of Materials Science and Engineering Zhejiang University

Organometal halide perovskite solar cell has attracted tremendous attention owing to its boosted development in the efficiency of converting solar energy into electricity. The interlayer plays a critical role in the device working mechanism. An efficient interlayer assures the charge transfer at cathode or anode interface, thereby guiding the charge transport to corresponding electrode selectively. Herein, we employed graphene oxide（GO） as hole conductor, PCBM/ZnO as electron conductor in inverted planar heterojunction（PHJ） perovskite solar cells, developed a unique sandwiched Ti Ox-Au-Ti Ox structured layer as electron conductor in regular PHJ device and finally achieved low-temperature processed devices with efficiency up to 16.7%. In addition, we found charge carrier diffusion lengths of two classes of perovskites, CHNHPbI–x Clx and CHNHPbI, are both highly sensitive to film processing conditions and optimal processing procedures are critical to preserving the long carrier diffusion lengths of the perovskite films.

关键词： perovskite solar cell interlayer hot-electron injection carrier diffusion length

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Research on applications of rectangular beam in micro laser propulsion

Research on applications of rectangular beam in micro laser ...

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作者： Jiao, L. Cai, J. Ma, H.H. Li, G.X. Li, L. Shen, Z.W. Tang, Z.P. Department of Modern Mechanics University of Science and Technology of China Hefei Anhui Province 230022 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

Micro laser propulsion is a new technology with brilliant future. In order to reduce the thruster mass and volume further, laser bar is introduced into the micro laser propulsion field. A new kind of 220 × 20 μm rectangular beam of 808 nm was obtained by oval lens compressing the light of diode at fast axes and slow axes. The effect of laser power, energy and coating thickness of double base propellant on propulsion performance was studied. Propulsion performance of double base propellant under static and dynamic mode shows some different characters. Compared to round beam, the new beam prefers to produce higher impulse. Ablation efficiency of DBP shows better performance in short laser duration. The combination of power density and energy density decides the laser propulsion performance. The new rectangular beam is appropriate for millisecond micro-laser propulsion. © 2014 Elsevier B.V. All rights reserved.

关键词： Thickness measurement

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NANOFIBER FORESTS WITH HIGH INFRARED ABSORPTANCE

NANOFIBER FORESTS WITH HIGH INFRARED ABSORPTANCE

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IEEE International Conference on Micro Electro Mechanical Systems

作者： H. Y. Mao C. Lei Y. J. Chen Z. J. Chen W. Ou W. G. Wu A. J. Ming D. P. Chen Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of Microelectronics Peking University

ISBN: (纸本)9781479935109

In this work, nanofiber forests with high infrared (IR) absorptance are reported. In wavelength range from 1.5 to 5 μm, the absorptance of the nanofiber forests reaches a minimum of 96%, which is much higher than that of Si_3N_4-based IR absorbers and the polymer coatings from which the nanofibers are obtained. Such nanofiber forests are fabricated by using a plasma-stripping-of-polymer technique, which is fast, high-yield and applicable to a wide range of polymers. Moreover, the technique is highly compatible with micro-fabrication. As a result, the nanofiber forests can be introduced into MEMS (Micro-Electro-Mechanical systems) IR devices, and it is expected that the performance of such devices can be improved.

关键词： Plasmas Polymers Fabrication Micromechanical devices Resists Nanoscale devices Substrates

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