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2014 15th International Conference on Electronic Packaging technology, ICEPT 2014

作者： Xiong, Nana Li, Zhiling Li, Jingze Xie, Hui Wang, Yuehui State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China Cheng Du China Department of Chemistry and Biology University of Electronic Science and Technology of China Zhongshan Institute Zhong Shan China

ISBN: (纸本)9781479947072

In this paper, a typical isotropic conductive adhesives (ICAs) composed of an epoxy-based binder containing micro-sized silver flakes was prepared and the effects of different curing procedures on the electrical properties of conductive adhesives were investigated. The results showed that there a greater influence of the curing temperature on 55% silver fill loading, the volume resistivity of ICAs decreased to 4.7×10-from 1.0×10-3 cured at 180 °C and 250 °C, respectively. However, there is almost no effect on the high silver fill loading. The in situ monitoring the variations in electrical resistance of ICAs with 65% silver fill loading was studied during the curing process, and it was found that the resistance reached to 1.99 MΩ at 180 °C after cured for 27 min, and reached to 1.39 KΩ for 40 min, and 18.8 Ω for 60 min and the cooling process almost no effect on the electrical resistance of ICAs. The reasons for the dependence of bulk resistivity on temperatures were also discussed in terms of the dispersing of the silver flakes in ICAs by SEM. © 2014 IEEE.

关键词： Silver

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High-performance planar heterojunction perovskite solar cells： Preserving long charge carrier diffusion lengths and interracial engineering

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Nano Research 2014年第12期7卷 1749-1758页

作者： Sai Bai Zhongwei Wu Xiaojing Wu Yizheng Jin Ni Zhao Zhihui Chen Qingqing Mei Xin Wang Zhizhen Ye Tao Song Ruiyuan Liu Shuit-tong Lee Baoquan Sun State Key Laboratory of Silicon Materials Cyrus Tang Center for Sensor Materials and Applications Department of Materials Science and Engineering and Center for Chemistry of High-Performance and Novel Materials Zhejiang University Hangzhou 310027 China jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Institute of Functional Nano & Soft Materials (FUNSOM) and Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University 199 Ren'ai Road Suzhou 215123 China Department of Electronic Engineering the Chinese University ofHong Kong Shatin New Territories Hong Kong China Shenzhen Resenrch Institute the Chinese University ofHong Kong Shatin New Territories Hong Kong China

We demonstrate that charge carrier diffusion lengths of two classes of perovskites, CH3NH3PbI3-xClx and CH3NH3PbI3, are both highly sensitive to film processing conditions and optimal processing procedures are critical to preserving the long carrier diffusion lengths of the perovskite films. This understanding, together with the improved cathode interface using bilayer-structured electron transporting interlayers of [6,6]-phenyl-C61-butyric acid methyl ester （PCBM）/ZnO, leads to the successful fabrication of highly efficient, stable and reproducible planar heterojunction CH3NH3PbI3-xCl2 solar cells with impressive power-conversion efficiencies （PCEs） up to 15.9%. A 1-square-centimeter device yielding a PCE of 12.3% has been realized, demonstrating that this simple planar structure is promising for large-area devices.

关键词： perovskite solar cells planar heterojunction charge carrier diffusion lengths ZnO nanocrystal films large area devices

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4H-SiC trench by inductively coupled plasma

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Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum science and technology 2015年第5期35卷 570-574页

作者： Hu, Jinbao Deng, Xiaochuan Shen, Huajun Yang, Qian Li, Chengzhan Liu, Kean Liu, Xinyu State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Microwave Device and IC Department Institute of Microelectronics Chinese Academy of Sciences Beijing China Semiconductor Business Unit Zhuzhou CSR Times Electric Co. Ltd. Zhuzhou China

Here, we addressed inductively-coupled plasma (ICP) etching of 4H-SiC trench, with SiO2 as the mask and SF6/O2/Ar as the etchant gases, in fabricating metal-oxide-semiconductor field-effect transistor (MOSFET). The influence of the etching conditions, including the ICP and RF powers, O2 flow rate and pressure, on the profile and microstructures of the trench was investigated with scanning electron microscopy and atomic force microscopy. The results show that the major etching conditions strongly affect the ICP etching. For instance, as the ICP and RF powers increased, the etching rate increased;the etching selectivity decreased with an increase of the pressure;and an increase of O2 flow-rate resulted in a better etching selectivity and a much weaker micro-trenching effect. High quality gate trenches were etched, with steep sidewalls, RMS surface roughness of below 0.4 nm and micro-trench-free, smooth flat bottom, under the optimized conditions: etching rate of 500 nm/min, ICP power of 800 W, RF power of 100 W, pressure of 0.4 Pa, and SF6/O2/Ar flow-rates ratio of 15/45/30. ©, 2015, science Press. All right reserved.

关键词： silicon carbide

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Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO_2 dielectric

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Chinese Physics B 2013年第11期22卷 585-588页

作者：韩锴王晓磊杨红王文武 Department of Physics and Electronic Science Weifang University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

Gd-doped HfO2 has drawn worldwide interest for its interesting features. It is considered to be a suitable material for N-type metal-oxide-semiconductor （MOS） devices due to a negative flatband voltage （Vfb） shift caused by the Gd doping. In this work, an anomalous positive shift was observed when Gd was doped into HfO2. The cause for such a phenomenon was systematically investigated by distinguishing the effects of different factors, such as Fermi level pinning （FLP）, a dipole at the dielectric/SiO2 interface, fixed interracial charge, and bulk charge, on Vfb. It was found that the FLP and interfacial dipole could make Vfb negatively shifted, which is in agreement with the conventional dipole theory. The increase in interfacial fixed charge resulting from Gd doping plays a major role in positive Vfb shift.

关键词： high-k dielectric HfGdOx interface dipole flatband voltage shift

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Regulation of structure rigidity for improvement of the thermal stability of near-infrared luminescence in Bi-doped borate glasses

Regulation of structure rigidity for improvement of the ther...

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第七届中国功能玻璃学术研讨会暨新型光电子材料国际论坛

作者： Qiangbing Guo Beibei Xu Dezhi Tan Juechen Wang Shuhong Zheng Wei Jiang Jianrong Qiu Shifeng Zhou State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering Zhejiang University State Key Laboratory of Luminescent Materials and Devices and Institute of Optical Communication Materials South China University of Technology

Bi-doped glasses have gained considerable attention due to its broadband and tunable near-infrared（NIR）emission in the range of 1000-1700 nm,which make it a promising material for application in broadband optical amplification,*** amplifier in fiber ***,the amplification gain and laser performance in Bi-doped glass fiber still leaves much to be *** is identified that Bi is present in various forms,including Bi,Bi,Bi,Bi atom,Bi cluster and Bi nanocrystal,in the glasses,and that the activation energy of the chemical transformations of these species is relatively *** the thermal activation during fiber drawing process is anticipated to be sufficient enough to trigger the transformation of Bi *** this point of view,we proposed a way of improving the NIR luminescence thermal stability of Bi-doped borate glasses by regulating the structure rigidity of *** an example,the NIR luminescence thermal stability is significantly improved with the addition of 5 mol%LaO,which is believed to enhance the structure *** results not only provide valuable guidance for suppressing performance degradation of Bi-doped glass during fiber drawing process,but also present an effective way to control the luminescence properties of main group elements in glasses from the perspective of glass structure.

关键词： Regulation of structure rigidity for improvement of the thermal stability of near-infrared luminescence in Bi-doped borate glasses

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Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO_2 dielectric and a TiN metal gate

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Journal of Semiconductors 2013年第11期34卷 53-56页

作者：韩锴马雪丽项金娟杨红王文武 Department of Physics and Electronic Science Weifang University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

Abstract： The effects of low temperature annealing, such as post high-k dielectric deposition annealing （PDA）, post metal annealing （PMA） and forming gas annealing （FGA） on the electrical characteristics of a metal-oxidesemiconductor （MOS） capacitor with a TiN metal gate and a Hf02 dielectric are systematically investigated. It can be found that the low temperature annealing can improve the capacitance-voltage hysteresis performance signifi- cantly at the cost of increasing gate leakage current. Moreover, FGA could effectively decrease the interfacial state density and oxygen vacancy density, and PDA could make the flat band positively shift which is suitable for P-type MOSs. key words： ALD Hf02; TiN; low temperature annealing; hysteresis

关键词： ALD HfO2 TiN low temperature annealing hysteresis

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Hydrothermal synthesis of hexagonal-phase NaYF_4:Er,Yb with different shapes for application as photovoltaic up-converters

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Chinese Physics B 2013年第2期22卷 492-498页

作者：王东丰张晓丹刘永娟吴春亚张存善魏长春赵颖 Institute of Photo-electronics Thin Film Devices and Technique of Nankai University Key Laboratory of Photo-electronics Thin Film Devices and Technique of TianjinKey Laboratory of Photo-electronic Information Science and Technology(Nankai University)Ministry of Education State Key Laboratory of Silicon Materials Zhejiang University School of Information Engineering.Hebei University of Technology

Hexagonal β-NaYF4 co-doped with Yb3＋ and Er3＋ is directly synthesized under mild conditions using a hydrothermal *** variation of the ratio of Ln3＋ to F-and ethylenediaminetetraacetic acid（EDTA） causes the shape of the microcrystal to change from microplate to *** NaYF4 powder is mixed with polydimethylsiloxane（PDMS） to create an up-converter for thin film amorphous silicon solar cells so as to evaluate the effectiveness of the synthesized material as an *** order to overcome the difficulty in measuring the effectiveness of up-conversion material,a new method of using near infrared illumination to measure the short circuit current densities of solar cells both with and without up-converters is *** up-converter with pure hexagonal NaYF4：Yb3＋/Er3＋ microcrystal produces a high current *** intensity data obtained by photoluminescence suggest that pure hexagonal NaYF4：Yb3＋/Er3＋ microcrystals are more efficient than nanocrystals when used as up-converting phosphors.

关键词： up-conversion NaYF4 hydrothermal method up-convertor solar cells

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Interface Engineering for Efficient Perovskite Solar Cell

Interface Engineering for Efficient Perovskite Solar Cell

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第一届新型太阳能电池暨钙钛矿太阳能电池学术研讨会

作者： Zhongwei Wu Sai Bai Zhongcheng Yuan Yizheng Jin Baoquan Sun Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Institute of Functional Nano & Soft Materials (FUNSOM) and Collaborative Innovation Center of Suzhou Nano Science and TechnologySoochow University State Key Laboratory of Silicon Materials Cyrus Tang Center for Sensor Materials and ApplicationsDepartment of Materials Science and EngineeringZhejiang University

Organometal halide perovskite solar cell has attracted tremendous attention owing to its boosted development in the efficiency of converting solar energy into electricity. The large absorption coefficient covering the visible spectrum, high carrier mobility and extremely long electron-hole diffusion lengths of perovskite assures the fabrication of high-performing solar cell. The shiny over 15% efficiency has been achieved in four years, since the 3.8% efficiency was achieved in its original attempt as absorber in dye sensitized solar cell. The conductor plays a critical role in the device working mechanism. An efficient conductor assures the charge transfer at cathode or anode interface, thereby guiding the charge transport to corresponding electrode selectively. Herein, we develop an efficient alternative hole conductor for perovskite solar cell, resulting in a power conversion efficiency(PCE) of 12.4%.

关键词： perovskite solar cell crystallization conductor

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Investigation on optical properties of 3C/4H structure silicon carbide

Investigation on optical properties of 3C/4H structure silic...

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第一届全国椭圆偏振光谱学研讨会

作者： Deng Xie Zhi Ren Qiu Bin Xin Ren-Xu Jia Yu-Ming Zhang Huirong Su Ting Mei Zhe Chuan Feng Laboratory of Nanophotonic Functional Materials and Devices Institute of Optoelectronic Material and TechnologySouth China Normal UniversityGuangzhou 510631China State Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-Sen UniversityGuangzhou 510275China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian UniversityXi''an 710071China Genuine Optronics LimitedShanghai 200235China Key Laboratory of Space Applied Physics and ChemistryMinistry of Education and Shaanxi Key Laboratory of Optical Information TechnologySchool of ScienceNorthwestern Polytechnical UniversityXi''an 710072China Institute of Photonics and Optoelectronics and Department of Electrical EngineeringNational Taiwan UniversityTaipeiTaiwan106-17

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Influence of the texturing structure on the properties of black silicon solar cell

Influence of the texturing structure on the properties of bl...

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作者： Zhong, Sihua Liu, Bangwu Xia, Yang Liu, Jinhu Liu, Jie Shen, Zenan Xu, Zheng Li, Chaobo Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Institute of Solar Energy in School of Science Beijing Jiaotong University Beijing 100044 China

An optimized textured structure is a key for high efficiency multi-crystalline silicon solar cell. In this work, black silicon wafers with various structures have been successfully produced by plasma immersion ion implantation. The surface morphology, reflectance and internal quantum efficiency have been investigated by atomic force microscope, spectrophotometer and quantum efficiency measurement system, respectively. Results show that nanohillocks with average height of 150-600 nm have been generated on black silicon surfaces by different texturing conditions, and the reflectance over the wavelength from 300 nm to 1100 nm decreases with increasing the height of nanohillocks, whereas the internal quantum efficiency worsens. The solar cell based on the optimized nanohillocks height of 300 nm yeilds efficiency of 15.99% with short circuit current of 34.0 mA/cm2. © 2012 Elsevier B.V.

关键词： Atomic force microscopy

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