Fine silica-like fines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm-wide spaces and form sharp peaks on a wafer coated with ...
Fine silica-like fines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm-wide spaces and form sharp peaks on a wafer coated with a layer of hydrogen silsesquioxane resist （HSQ）. By precisely controlling the mask-wafer gap at 10μm using the laser interferogram method, the fine structures are defined on HSQ. Experimental images are reproduced by a simulation using the one-dimensional beam propagation method. This lithographic technique presents a novel and convenient way to fabricate fine silica-like structures and devices in nano-optical and nanoelectronic applications.
A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. ...
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A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.
GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid sourc...
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GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.
A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect t...
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A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p^--substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field （REBULF） is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain, The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.
In order to develop the format conversion software that can operate in the Windows system and also can in the L-EDIT, the new algorithm of graphics along border division is introduced which used for the pattern format...
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In order to develop the format conversion software that can operate in the Windows system and also can in the L-EDIT, the new algorithm of graphics along border division is introduced which used for the pattern format conversion from CIF format to PG3600 format. The algorithm application on the division from circles or polygons into rectangles is discussed. It has obvious advantages for the division of irregular graphics in comparison with some other common algorithms.
This paper analyzes the relation between the boundary curvature radius of the drain region and the breakdown voltage of RF RESURF LDMOS. The bending of the curve in the RESURF technology can increase the breakdown vol...
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This paper analyzes the relation between the boundary curvature radius of the drain region and the breakdown voltage of RF RESURF LDMOS. The bending of the curve in the RESURF technology can increase the breakdown voltage greatly. Analysis and simulation prove that the high breakdown voltage and much lower on-resistance in the same device profile can be maintained by an impurity dose or by increasing the thickness of the drift region and reducing boundary curvature radius of the drain region under the REUSRF principle.
FePt thin films are deposited on SrTiO3, MgO, and a 2 nm-FeOx underlayer on an Si substrate at room temperature and then annealed at elevated temperatures. Studies of the L10 ordering process in each case show that th...
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