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Optimal impurity distribution model and experimental verification of variation of lateral doping termination

Chinese Physics B 2023年第4期32卷 724-729页

作者：任敏叶昶宇周建宇张新郑芳马荣耀李泽宏张波 State key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Guangdong Institute of Electronic Information Engineering University of Electronic Science and Technology of ChinaDongguan 523808China Wuxi China Resources Huajing Microelectronics Co.LTD Wuxi 214061China

Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD)and its ion-injection mask design method are proposed and *** comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD(T-VLD).Vertical double diffusion MOSFET(VDMOS)with OID-VLD achieved breakdown voltage(BV)of 1684 V and passed the 168 hours 100℃-110℃-120℃-125℃high-temperature reverse bias(HTRB)test,while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120℃HTRB test.

关键词： variation of lateral doping(VLD) junction termination breakdown voltage reliability

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Preparation of meter-scale Cu foils with decimeter grains and the use for the synthesis of graphene films

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Journal of Materiomics 2024年第1期10卷 1-6页

作者： Ruitao Jia Fangzhu Qing Shurong Wang Yuting Hou Changqing Shen Feng Hao Yang Yang Hongwei Zhu Xuesong Li School of Integrated Circuit Science and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of ChinaChengdu610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu610054China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of ChinaShenzhen518110China School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu610054China PipeChina Southwest Pipeline Co. Ltd.Chengdu610041China State Key Lab of New Ceramics and Fine Processing School of Materials Science and EngineeringTsinghua UniversityBeijing100084China

Chemical vapor deposition(CVD)is the most promising method for the preparation of high-quality and large-area graphene films,especially the epitaxial growth of graphene on large-area single-crystal Cu *** single-crystal Cu foils are normally achieved by thermally annealing the commercial poly-crystalline Cu foils,their size and therefore the size of graphene films grown on them are limited to the size of the reaction *** report a simple and feasible method to prepare large-area Cu foils with decimeter grains by thermally annealing the rolled-up Cu foils,where the Cu layers are separated by thin porous carbon fiber *** carbon fiber cloths prevent Cu layers from sticking to each other at high temperatures while do not block the gas *** such a way,the utilization efficiency of the reaction chamber is significantly improved,e.g.,0.2 m×(1e2)m Cu foils can be processed even in a 5 cm diameter quartz tube ***-quality graphene films grown on such Cu foils are then *** method may be suitable for the annealing of other metal foils to enlarge grain size and the synthesis of other two-dimensional materials on them such as h-BN.

关键词： Graphene Single-crystal Cu Chemical vapor deposition Synthesis

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Exploring the Effect of Back-Gate Bias on Stability of DSOI SRAM-Based Physical Unclonable Function

Exploring the Effect of Back-Gate Bias on Stability of DSOI ...

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European Conference on Radiation and its Effects on Components and Systems (RADECS)

作者： Zexin Su Bo Li Hongyu Ren Shanshan Ma Gang Zhang Weidong Zhang Zhengsheng Han Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Institute of Microelectronics of the Chinese Academy of Sciences University of Chinese Academy of Sciences Beijing China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Institute of Microelectronics of the Chinese Academy of Sciences Beijing China

Two types of SRAM PUF were tested under various back-gate bias. The bit error rate can be reduced by 4.1% and 11.46% through selecting appropriate transistor type and back-gate bias before and after radiation.

ISBN: (数字)9798331520441

ISBN: (纸本)9798331520458

关键词： Semiconductor device measurement Power measurement Bit error rate Random access memory Switches Physical unclonable function Threshold voltage Thermal noise Transistors Thermal stability

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Fabrication of Y-cut LiNbO3 Single Crystalline Film and SAW Resonator on Flexible Polyimide Substrate

Fabrication of Y-cut LiNbO3 Single Crystalline Film and SAW ...

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2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024

作者： Gao, Yizhuo Luo, Wenbo Huang, Shitian Fan, Wei Zhu, Dailei Wang, Xu Pan, Xinqiang Shuai, Yao Wu, Chuangui Zhang, Wanli University of Electronic Science and Technology of China School of Integrated Circuit Science and Engineering Chengdu610054 China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing401332 China

ISBN: (纸本)9798331530709

Flexible surface acoustic wave (SAW) resonators on single crystal LiNbO3(LN) film have been successfully fabricated using benzocyclobutene bonding and crystal ion slicing technology. The effects of Polyimide (PI) thickness on the properties of LN film have been studied. 960 nm LN single crystal films without cracks have been transferred to 25 μ ∼m PI substrates, which are used to construct flexible SAW resonators. The flexible SAW resonators show well frequency-strain response characteristics. These results demonstrated that LN single crystal film on PI substrate and its SAW resonator is a promising candidate in flexible electronic devices. © 2024 IEEE.

关键词： Saws

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Active tunable terahertz bandwidth absorber based on single layer graphene

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Communications in Theoretical Physics 2023年第4期75卷 106-113页

作者： Wenxin Li Yingting Yi Hua Yang Shubo Cheng Wenxing Yang Huafeng Zhang Zao Yi Yougen Yi Hailiang Li School of Physics and Optoelectronic Engineering Yangtze UniversityJingzhou 434023China College of Physics and Electronics Central South UniversityChangsha 410083China School of Science Lanzhou University of TechnologyLanzhou 730050China Joint Laboratory for Extreme Conditions Matter Properties Southwest University of Science and TechnologyMianyang 621010China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

In this paper,an active tunable terahertz bandwidth absorber based on single-layer graphene is proposed,which consists of a graphene layer,a photo crystal plate,and a gold *** the Fermi energy(Ef)of graphene is 1.5 eV,the absorber shows high absorption in the range of 3.7 THz–8 THz,and the total absorption rate is 96.8%.By exploring the absorption mechanism of the absorber,the absorber shows excellent physical *** absorber also shows good adjustability by changing the Efof *** means that the absorber exhibits excellent tunability by adjusting the physical parameters and Efof the ***,the absorber is polarization independent and insensitive to the incident *** fine characteristics of the absorber mean that the absorber has superior application value in many fields such as biotechnology and space exploration.

关键词： metamaterials active tunable bandwidth absorber terahertz graphene

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A 256 Kbit Hf0.5Zr0.5O2-based FeRAM Chip with Scaled Film Thickness (sub-8nm), Low Thermal Budget (350oC), 100% Initial Chip Yield, Low Power Consumption (0.7 pJ/bit at 2V write voltage), and Prominent Endurance (>1012)

A 256 Kbit Hf0.5Zr0.5O2-based FeRAM Chip with Scaled Film Th...

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2023 International Electron devices Meeting, IEDM 2023

作者： Jiang, Pengfei Jiang, Haijun Yang, Yang Tai, Lu Wei, Wei Gong, Tiancheng Wang, Yuan Xu, Pan Lv, Shuxian Wang, Boping Gao, Jianfeng Li, Junfeng Luo, Jun Yang, Jianguo Luo, Qing Liu, Ming Shandong University School of Information Science and Engineering Qingdao China Institute of Microelectronics Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing China Institute of Microelectronics Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Beijing China Zhangjiang Lab Shanghai China

ISBN: (纸本)9798350327670

In this work, we successfully resolve the remanent polarization (Pr) degradation issue, which is caused by the thermal budget decreasing and the film thickness scaling of Hf0.5Zr0.5O2 (HZO), and co-integrate the TiN/HZO/TiN capacitors with large initial Pr and low operating voltage in the Back-End-of -Line (BEOL) of 130nm CMOS technology to provide a 256 Kbit 1T1C FeRAM chip. Firstly, we prove that the Pr degradation is caused by the increasing component of anti-ferroelectric (AFE) phase. Then, utilizing the pre-crystallization engineering and O3 treatment to the TiN bottom electrode (BE), not only the formation of t-phase is effectively suppressed, but also the required annealing temperature is reduced. The enhancement of ferroelectricity is related to the small thermal expansion of TiO2 interface layer, which can induce large tensile stress to HZO during the annealing process. Moreover, the oxidization of TiN BE can prevent it absorbing oxygen from HZO, and the reduced oxygen vacancy (Vo) defects can improve both the retention and TDDB characteristics. Based on the above optimizations, the chip demonstrates 100% initial chip yield, >150mV sense margin after 1012 write cycles, power consumption of 0.7 pJ/bit at 2V write voltage, over 1012 endurance and 10 years retention. © 2023 IEEE.

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Structural plasticity-based hydrogel optical Willshaw model for one-shot on-the-fly edge learning

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InfoMat 2023年第4期5卷 48-59页

作者： Dingchen Wang Dingyao Liu Yinan Lin Anran Yuan Woyu Zhang Yaping Zhao Shaocong Wang Xi Chen Hegan Chen Yi Zhang Yang Jiang Shuhui Shi Kam Chi Loong Jia Chen Songrui Wei Qing Wang Hongyu Yu Renjing Xu Dashan Shang Han Zhang Shiming Zhang Zhongrui Wang Department of Electrical and Electronic Engineering The University of Hong KongHong Kongthe People's Republic of China ACCESS-AI Chip Center for Emerging Smart Systems InnoHK CentersHong Kong Science ParkHong Kongthe People's Republic of China School of Computer Science and Engineering Faculty of Innovation EngineeringMacao University of Science and TechnologyMacaothe People's Republic of China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijingthe People's Republic of China Collaborative Innovation Center for Optoelectronic Science Technology International Collaborative Laboratory of 2D Materials for OptoelectronicsScience and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhenthe People's Republic of China School of Microelectronics Southern University of Science and TechnologyShenzhenthe People's Republic of China Microelectronics Thrust Function Hub of the Hong Kong University of Science and Technology(Guangzhou)Guagndongthe People's Republic of China

Autonomous one-shot on-the-fly learning copes with the high privacy,small dataset,and in-stream data at the *** such learning on digital hardware suffers from the well-known von-Neumann and scaling *** optical neural networks featuring large parallelism,low latency,and high efficiency offer a promising ***,ex-situ training of conventional optical networks,where optical path configuration and deep learning model optimization are separated,incurs hardware,energy and time overheads,and defeats the advantages in edge ***,we introduced a bio-inspired material-algorithm co-design to construct a hydrogel-based optical Willshaw model(HOWM),manifesting Hebbian-rule-based structural plasticity for simultaneous optical path configuration and deep learning model optimization thanks to the underlying opto-chemical *** first employed the HOWM as an all optical in-sensor AI processor for one-shot pattern classification,association and *** then leveraged HOWM to function as a ternary content addressable memory(TCAM)of an optical memory augmented neural network(MANN)for one-shot learning the Omniglot *** HOWM empowered one-shot on-the-fly edge learning leads to 1000boost of energy efficiency and 10boost of speed,which paves the way for the next-generation autonomous,efficient,and affordable smart edge systems.

关键词： associative memory hydrogel one-shot learning optical neural network structural plasticity Willshaw model

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Mass transport induced structural evolution and healing of sulfur vacancy lines and Mo chain in monolayer MoS_(2)

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Rare Metals 2022年第1期41卷 333-341页

作者： Xiao-Wei Wang Lin-Fang Hou Wei Huang Xi-Biao Ren Wei Ji Chuan-Hong Jin State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China Department of Physics Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano DevicesRenmin University of ChinaBeijing 100872China Hunan Institute of Advanced Sensing and Information Technology Xiangtan UniversityXiangtan 411105China

Defects play vital roles in tailoring structures and properties of materials including the atomically thin two-dimensional(2D)materials,and increasing demands are requested to find effective ways to realize the defect engineering,i.e.,tuning the defects and thus the materials’structure–property in a well-controlled ***,we propose a novel method to tune the structures and configurations of one-dimensional(1D)line defects in monolayer MoS2 via mass transport induced structural *** using atomic-resolved annular dark-field scanning transmission electron microscopy(ADF-STEM),we demonstrate in situ that sulfur vacancy line defect can be healed locally into defect-free MoS_(2)lattice via the desorption of Mo atoms from vacancy lines and adsorption into a moving Mo ***,directional transport of Mo atoms(or Mo cluster)along the sulfur vacancy lines can induce the formation of Mo *** a mass transport induced defect tuning provides more operational routes for the rational defect designing and property tuning in MoS_(2)as well as other related 2D materials.

关键词： MoS_(2) Defect engineering In situ transmission electron microscopy(TEM) Mass transport Line defect

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Theoretical and experimental study on the vertical-variabledoping superjunction MOSFET with optimized process window

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Journal of Semiconductors 2025年第6期46卷 97-104页

作者： Min Ren Meng Pi Rongyao Ma Xin Zhang Ziyi Zhou Qingying Lei Lvqiang Li Zehong Li Bo Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and Engineering(NationEaxl emplary School of Microelectronics)University of Electronic Science and Technology of ChinaChengdu 610054China Wuxi China Resources Huajing Microelectronics Co.LTD Wuxi 214061China Guangdong Institute of Electronic Information Engineering University of Electronic Science and Technology of ChinaDongguan 523429China

As a type of charge-balanced power device,the performance of super-junction MOSFETs(SJ-MOS)is significantly influ-enced by fluctuations in the fabrication *** overcome the relatively narrow process window of conventional SJ-MOS,an optimized structure"vertical variable doping super-junction MOSFET(VVD-SJ)"is *** on the analysis using the charge superposition principle,it is observed that the VVD-SJ,in which the impurity concentration of the P-pillar gradually decreases while that of the N-pillar increases from top to bottom,improves the electric field distribution and mitigates charge imbalance(CIB).Experimental results demonstrate that the optimized 600 V VVD-SJ achieves a 35.90%expansion of the pro-cess window.

关键词： super-junction charge imbalance process window breakdown voltage(BV) unclamped inductive switching(UIS)

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Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices

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Journal of Semiconductors 2023年第1期44卷 43-55页

作者： Xinyu Huang Xu Han Yunyun Dai Xiaolong Xu Jiahao Yan Mengting Huang Pengfei Ding Decheng Zhang Hui Chen Vijay Laxmi Xu Wu Liwei Liu Yeliang Wang Yang Xu Yuan Huang Advanced Research Institute of Multidisciplinary Science Beijing Institute of TechnologyBeijing 100081China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing 100081China BIT Chongqing Institute of Microelectronics and Microsystems Chongqing 401332China

Moiré superlattices are formed when overlaying two materials with a slight mismatch in twist angle or lattice constant. They provide a novel platform for the study of strong electronic correlations and non-trivial band topology, where emergent phenomena such as correlated insulating states, unconventional superconductivity, and quantum anomalous Hall effect are discovered. In this review, we focus on the semiconducting transition metal dichalcogenides(TMDs) based moiré systems that host intriguing flat-band physics. We first review the exfoliation methods of two-dimensional materials and the fabrication technique of their moiré structures. Secondly, we overview the progress of the optically excited moiré excitons, which render the main discovery in the early experiments on TMD moiré systems. We then introduce the formation mechanism of flat bands and their potential in the quantum simulation of the Hubbard model with tunable doping, degeneracies, and correlation strength. Finally, we briefly discuss the challenges and future perspectives of this field.

关键词： flat-band physics two-dimensional materials moirésuperlattices Hubbard model moiréexcitons

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