检索结果-内蒙古大学图书馆

Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge_(2)Sb_(2)Te_(5) electronic synapses

引用

InfoMat 2024年第8期6卷 85-96页

作者： Qiang Wang Yachuan Wang Yankun Wang Luyue Jiang Jinyan Zhao Zhitang Song Jinshun Bi Libo Zhao Zhuangde Jiang Jutta Schwarzkopf Shengli Wu Bin Zhang Wei Ren Sannian Song Gang Niu State Key Laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China School of Integrated Circuits Peking UniversityBeijingthe People's Republic of China Beijing Microelectronics Technology Institute Beijingthe People's Republic of China National Key Laboratory of Human-Machine Hybrid Augmented Intelligence National Engineering Research Center for Visual information and Applicationsand School of SoftwareXi'an Jiaotong UniversityXi'anthe People's Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaithe People's Republic of China Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijingthe People's Republic of China University of Chinese Academy of Sciences Beijingthe People's Republic of China The State Key Laboratory for Manufacturing Systems Engineering&The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China Leibniz-Institut für Kristallzüchtung Max-Born-Straße 2BerlinGermany Key Laboratory of Physical Electronics and Devices Ministry of EducationSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China

In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits,the reliable electronic synapses mimicked by single device that achieves diverse long-term and short-term plasticity are *** change random access memory(PCRAM)is of great potential for artificial synapses,which faces,however,difficulty to realize short-term plasticity due to the long-lasting resistance *** work reports the ruthenium-doped Ge_(2)Sb_(2)Te_(5)(RuGST)based PCRAM,demonstrating a series of synaptic behaviors of short-term potentiation,pair-pulse facilitation,longterm depression,and short-term plasticity in the same single *** optimized RuGST electronic synapse with the high transformation temperature of hexagonal phase>380C,the outstanding endurance>108 cycles,the low resistance drift factor of 0.092,as well as the extremely high linearity with correlation coefficients of 0.999 and 0.976 in parts of potentiation and *** investigations also go insight to mechanisms of Ru doping according to thorough microstructure characterization,revealing that Ru dopant is able to enter GST lattices thus changing and stabilizing atomic arrangement of *** leads to the short-term plasticity realized by RuGST ***,the proposed RuGST electronic synapses performs a high accuracy of94.1%in a task of image recognition of CIFAR-100 database using ResNet *** work promotes the development of PCRAM platforms for large-scale neuromorphic systems.

关键词： electronic synapses neuromorphic computing PCRAM Ru-doped Ge_(2)Sb_(2)Te_(5)

来源：评论

学校读者我要写书评

暂无评论

Electric field dependence of spin qubit in a Si-MOS quantum dot

引用

Chinese Physics B 2024年第6期33卷 248-253页

作者：马荣龙倪铭周雨晨孔真真王桂磊刘頔罗刚曹刚李海欧郭国平 CAS Key Laboratory of Quantum Information University of Science and Technology of ChinaHefei 230026China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of ChinaHefei 230026China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Beijing Superstring Academy of Memory Technology Beijing 100176China Hefei National Laboratory University of Science and Technology of ChinaHefei 230088China Origin Quantum Computing Company Limited Hefei 230026China

Valley, the intrinsic feature of silicon, is an inescapable subject in silicon-based quantum computing. At the spin–valley hotspot, both Rabi frequency and state relaxation rate are significantly enhanced. With protection against charge noise, the valley degree of freedom is also conceived to encode a qubit to realize noise-resistant quantum ***, based on the spin qubit composed of one or three electrons, we characterize the intrinsic properties of valley in an isotopically enriched silicon quantum dot(QD) device. For one-electron qubit, we measure two electric-dipole spin resonance(EDSR) signals which are attributed to partial occupation of two valley states. The resonance frequencies of two EDSR signals have opposite electric field dependences. Moreover, we characterize the electric field dependence of the upper valley state based on three-electron qubit experiments. The difference of electric field dependences of the two valleys is 52.02 MHz/V, which is beneficial for tuning qubit frequency to meet different experimental requirements. As an extension of electrical control spin qubits, the opposite electric field dependence is crucial for qubit addressability,individual single-qubit control and two-qubit gate approaches in scalable quantum computing.

关键词： silicon-based quantum computing valley electric-dipole spin resonance

来源：评论

学校读者我要写书评

暂无评论

Design and fabrication of etchless lithium niobate photonic crystal nanobeam cavity for efficient photon manipulation 15

Design and fabrication of etchless lithium niobate photonic ...

引用

15th International Conference on Information Optics and Photonics, CIOP 2024

作者： Jiang, Zhi Yao, Danyang Gao, Yu Ran, Xu Wang, Jianguo Gan, Xuetao Liu, Yan Hao, Yue Han, Genquan State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Faculty of integrated circuits Xidian University Xi’an710071 China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi’an710129 China Hangzhou Institute of Technology Xidian University Hangzhou311200 China

ISBN: (数字)9781510686175

ISBN: (纸本)9781510686168

Recently, a novel approach that uses low-refractive-index polymers as loading materials coated on lithium niobate (LN) can dramatically simplify fabrication challenges for etching LN. On this platform, various devices operating in the transverse magnetic (TM) polarized state based on optical bound states in the continuum (BIC) have been demonstrated. However, in this configuration, the propagation loss of TM mode exhibits sensitivity to waveguide width, which limits design flexibility in waveguide structures. To this end, we designed transverse magnetic electric (TE) polarized photonic crystal structures with the same fabrication process using a y-cut LN on insulator (LNOI) substrate. The fabricated photonic crystal nanobeam cavity (PCNBC) achieves a Q factor over one order of magnitude higher than any previously reported PCNBCs on the etchless LNOI platform and retains a high transmission. To verify the strong photon manipulation ability, additional experiments such as thermo-optic tuning and optical bistability generation have been made. These results demonstrate the potential of our devices for efficient on-chip photon manipulation. © 2024 SPIE.

关键词： Optical bistability

来源：评论

学校读者我要写书评

暂无评论

An AuNPs/Mesoporous NiO/Nickel Foam Nanocomposite as a Miniaturized Electrode for Heavy Metal Detection in Groundwater

引用

Engineering 2023年第8期27卷 199-208页

作者： Boyuan Xue Qian Yang Kaidong Xia Zhihong Li George Y.Chen Dayi Zhang Xiaohong Zhou State Key Joint Laboratory of Environment Simulation and Pollution Control School of EnvironmentTsinghua UniversityBeijing 100084China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of MicroelectronicsPeking UniversityBeijing 100871China Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things Guangdong and Hong Kong Joint Research Centre for Optical Fiber SensorsShenzhen UniversityShenzhen 518060China College of New Energy and Environment Jilin UniversityChangchun 130021China The Research Institute of Environmental Innovation(Suzhou) Tsinghua UniversitySuzhou 215000China

Heavy metals,notably Pb2+and Cu^(2+),are some of the most persistent contaminants found in *** monitoring of these metals,which relies on efficient,sensitive,cost-effective,and reliable methods,is a *** present a nanocomposite-based miniaturized electrode for the concurrent measurement of Pb2+and Cu^(2+)by exploiting the electroanalytical technique of square wave *** also propose a facile in situ hydrothermal calcination method to directly grow binder-free mesoporous Ni O on a three-dimensional nickel foam,which is then electrochemically seeded with gold nanoparticles(Au NPs).The meticulous design of a low-barrier Ohmic contact between mesoporous Ni O and Au NPs facilitates target-mediated nanochannel-confined electron transfer within mesoporous Ni *** a result,the heavy metals Pb2+(0.020 mg.L^(-1)detection limit;2.0–16.0 mg.L^(-1)detection range)and Cu^(2+)(0.013 mg.L^(-1)detection limit;0.4–12.8 mg.L^(-1)detection range)can be detected simultaneously with high ***,other heavy metal ions and common interfering ions found in groundwater showed negligible impacts on the electrode’s performance,and the recovery rate of groundwater samples varied between 96.3%±2.1%and 109.4%±0.6%.The compactness,flexible shape,low power consumption,and ability to remotely operate our electrode pave the way for onsite detection of heavy metals in groundwater,thereby demonstrating the potential to revolutionize the field of environmental monitoring.

关键词： AuNPs Mesoporous NiO Miniaturized electrode Heavy metal ions Groundwater Square wave voltammetry

来源：评论

学校读者我要写书评

暂无评论

High-spatiotemporal-resolution chip analysis using a fiber-coupled quantum sensor based on diamond N-V centers

引用

Physical Review Applied 2025年第2期23卷 024050-024050页

作者： Youwei Liu Fazhan Zhao Jing Li Zhenfeng Li Lei Wang Bo Li Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China School of Integrated Circuits University of Chinese Academy of Sciences 101408 Beijing China Communication and Information Engineering Center Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China

We propose a chip analysis method using a fiber-optic quantum sensor based on diamond nitrogen-vacancy (N-V) centers to capture the magnetic field associated with short-pulse currents in chips. The fiber-coupled diamond N-V sensor was precisely positioned at the target region of the chip. We performed real-time monitoring of the N-V center fluorescence responses to pulsing magnetic fields generated by the pulse signals in the test chip through continuous-wave optically detected magnetic resonance. This allowed the accurate reconstruction of the chip internal node signal variations. We successfully achieved a time resolution of 200 ns, which was consistent with the metastable state lifetime of the N-V centers at room temperature. Furthermore, we evaluated the shot noise–limited magnetic sensitivity, which was found to be 6.3nT/Hz1/2. The proposed system exhibited swift responsivity to short pulse currents in the chip, providing highly accurate spatial localization of magnetic field variations. It satisfied the demand for rapid response and precise positioning in chip testing. Overall, this study validates the potential application of N-V centers in the domain of chip security analysis, offering a solution for chip diagnostics.

关键词： Quantum optics

来源：评论

学校读者我要写书评

暂无评论

Flash-based in-memory computing for stochastic computing in image edge detection

引用

Journal of Semiconductors 2023年第5期44卷 145-149页

作者： Zhaohui Sun Yang Feng Peng Guo Zheng Dong Junyu Zhang Jing Liu Xuepeng Zhan Jixuan Wu Jiezhi Chen School of Information Science and Engineering(ISE) Shandong UniversityQingdao 266000China Shandong Sinochip Semiconductors Co.Ltd Jinan 250101China Neumem Co. LtdHefei 230088China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China

The“memory wall”of traditional von Neumann computing systems severely restricts the efficiency of data-intensive task execution,while in-memory computing(IMC)architecture is a promising approach to breaking the *** variations and instability in ultra-scaled memory cells seriously degrade the calculation accuracy in IMC architectures,stochastic computing(SC)can compensate for these shortcomings due to its low sensitivity to cell ***,massive parallel computing can be processed to improve the speed and efficiency of the *** this paper,by designing logic functions in NOR flash arrays,SC in IMC for the image edge detection is realized,demonstrating ultra-low computational complexity and power consumption(25.5 fJ/pixel at 2-bit sequence length).More impressively,the noise immunity is 6 times higher than that of the traditional binary method,showing good tolerances to cell variation and reliability degradation when implementing massive parallel computation in the array.

关键词： in-memory computing stochastic computing NOR flash memory image edge detection

来源：评论

学校读者我要写书评

暂无评论

Multitarget gas alarm system for high-performance and anti-interference chemical warfare agents simulants detection

引用

science China(Technological sciences) 2025年第3期68卷 349-358页

作者： Yubin YUAN Qiang WU Menglong JIAO Haiyang WU Weihua LIU Xuming WANG Xiangrui BU Gong LI Chuanyu HAN Long HU Xin LI Xiaoli WANG Shool of Microelectronics School of Electronics and Information EngineeringXi’an Jiaotong UniversityXi’an710049China The Key Lab of Micro-nano Electronics and System Integration of Xi’an City Xi’an710049China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou310024China School of Automation and Information Engineering Xi’an University of TechnologyXi’an710048China Key Laboratory for Physical Electronics and Devices of the Ministry of Education Xi’an Jiaotong UniversityXi’an710049China School of Science Xi’an Jiaotong UniversityXi’an710049China

Chemical warfare agents(CWAs)can cause significant harm to health and even death in a very short time even when inhaled in small amounts(~100 mg min/m^(3)).Detection equipment based on conventional techniques,including gas chromatography-mass spectrometry,Raman spectroscopy,fluorescence spectroscopy,and ion mobility spectrometry,have the disadvantages of high cost,long detection time,and high power ***,portable,and convenient equipment for target CWAs detection under interference is a *** this study,we propose an alarm system comprising a multitype micro sensor array and a field-programmable gate array-based readout circuit for CWAs simulants *** common volatile organic compound,temperature,and water vapor interference,the proposed multitype sensor-based detection system realizes an alarm function in less than 20 s with thresholds of 1 ppm dimethyl methylphosphonate(DMMP),4.6 ppm 2,2'-dichlorodiethyl ether(DCE),and 20 ppm SO_(2).Furthermore,the proposed detection system was evaluated outside the laboratory and passed the wilderness test,demonstrating its reliability in the *** believe that the proposed alarm system will contribute to the development of intelligent,portable,low-cost,and anti-interference CWAs detection technology.

关键词： alarm system CWAs simulants surface acoustic wave sensor mixed gas anti-interference

来源：评论

学校读者我要写书评

暂无评论

180nm BCD technology Platform with 8V to 65V Isolated LDMOS 17

180nm BCD Technology Platform with 8V to 65V Isolated LDMOS

引用

17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024

作者： Ding, Qi Li, Renxiong Ning, Ning Huang, Jun Guo, Yutuo Wang, Yu He, Kunqin Liu, Yaxin Wang, Huaishan Tang, Juan Huo, Qiuyue Yuan, Minghong Peng, Pan Qiao, Ming Peng, Lulu Zhang, Bo United Microelectronics Center Co. Ltd Chongqing China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Institute of Electronic and Information Engineering UESTC in Guangdong Dongguan China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen China

This work presents a 180nm BCD technology platform with 1.8V/5V CMOS, BJT, 8-65V isolated LDMOS (Lateral Double-Diffused MOSFET) and other devices such as diodes, resistors, capacitors etc., which possesses competitiv... 详细信息

ISBN: (纸本)9798350361834

关键词： MOSFET devices

来源：评论

学校读者我要写书评

暂无评论

Cache-Major: A Hardware Architecture and Scheduling Policy for Improving DRAM Access Efficiency in GEMV 16

Cache-Major: A Hardware Architecture and Scheduling Policy f...

引用

16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Cheng, Jinhui Liu, Xuanzhi Cao, Yue Zhang, Wenjun Han, Zhongze Peng, Bo Liu, Yixuan Zhang, Donglin Han, Yongkang Xu, Xiaoxin Yang, Jianguo University of Science and Technology of China School of Microelectronics Hefei230026 China Zhejiang Lab Hangzhou311121 China Institute of Microelectronics of the Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing100029 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

The general matrix-vector multiplication (GEMV) is one of the most critical operations in HPC (high performance computing) researches and engineering applications, and is often used to evaluate the performance of a new architectural system. As the scale of the GEMV problem continues to expand, frequent out-of-order access to the DRAM gradually leads to the decrease of the system access bandwidth, which becomes the bottleneck to solve the GEMV efficiently. In this paper, we propose a high bandwidth cache designed in a highly customized memory controller and an efficient cache major scheduling policy which fully utilize DRAM address locality to achieve high-performance GEMV computation. The experimental results show that our proposed cache-major policy has reached a single-core sustained effective bandwidth of 112.34 MB/s (@2000× 2000, 32-bit float-point matrix), much better than baseline design and existing mature works. © 2022 IEEE.

关键词： Dynamic random access storage

来源：评论

学校读者我要写书评

暂无评论

Frontiers in high entropy alloys and high entropy functional materials

引用

Rare Metals 2024年第10期43卷 4639-4776页

作者： Wen-Tao Zhang Xue-Qian Wang Feng-Qi Zhang Xiao-Ya Cui Bing-Bing Fan Jia-Ming Guo Zhi-Min Guo Rui Huang Wen Huang Xu-Bo Li Meng-Ru Li Yan Ma Zhi-Hua Shen Yong-Gang Sun De-Zhuang Wang Fei-Yang Wang Li-Qiang Wang Nan Wang Tian-Li Wang Wei Wang Xiao-Yang Wang Yi-Han Wang Fu-Jie Yu Yu-Zhen Yin Ling-Kun Zhang Yi Zhang Jian-Yang Zhang Qi Zhao Yu-Ping Zhao Xin-Dong Zhu Yasir Sohail Ya-Nan Chen Tao Feng Qi-Long Gao Hai-Yan He Yong-Jiang Huang Zeng-Bao Jiao Hua Ji Yao Jiang Qiang Li Xiao-Ming Li Wei-Bing Liao Huai-Jun Lin Hui Liu Qi Liu Qing-Feng Liu Wei-Di Liu Xiong-Jun Liu Yang Lu Yi-Ping Lu Wen Ma Xue-Fei Miao Jie Pan Qing Wang Hong-Hui Wu Yuan Wu Tao Yang Wei-Ming Yang Qian Yu Jin-Yu Zhang Zhi-Gang Chen Liang Mao Yang Ren Bao-Long Shen Xun-Li Wang Zhe Jia He Zhu Zhen-Duo Wu Si Lan School of Materials Science and Engineering Nanjing University of Science and TechnologyNanjing 210094China Jiangsu Key Laboratory for Advanced Metallic Materials School of Materials Science and EngineeringSoutheast UniversityNanjing 211189China Department of Physics City University of Hong KongHongKong 999077China School of Materials Science and Engineering Tianjin UniversityTianjin 300072China School of Physics and Microelectronics Zhengzhou UniversityZhengzhou 450001China Department of Mechanical Engineering Research Institute for Advanced ManufacturingThe Hong Kong Polytechnic UniversityHong Kong 100872China Center of Electron Microscopy and State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China Key Laboratory of Solidification Control and Digital Preparation Technology(Liaoning Province) School of Materials Science and EngineeringDalian University of TechnologyDalian 116024China Institute of Advanced Wear&Corrosion Resistance and Functional Materials Jinan UniversityGuangzhou 510632China School of Mechanics and Civil Engineering China University of Mining and TechnologyXuzhou 221116China School of Physical Sciences Great Bay UniversityDongguan 523000China School of Materials Science and Engineering Harbin Institute of TechnologyHarbin 150001China State Key Laboratory of Materials-Oriented Chemical Engineering College of Chemical EngineeringNanjing Tech UniversityNanjing 211816China Beijing Advanced Innovation Center for Materials Genome Engineering Research Institute for Carbon NeutralityUniversity of Science and Technology BeijingBeijing 100083China Department of Mechanical Engineering The University of Hong KongHong Kong 999077China School of Computing Macquarie UniversitySydney 2113Australia Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China State Key Laborato

Owing to their exceptional properties,high-entropy alloys(HEAs)and high-entropy materials have emerged as promising research areas and shown diverse ***,the recent advances in the field are comprehensively reviewed,organized into five *** first section introduces the background of HEAs,covering their definition,significance,application prospects,basic properties,design principles,and *** subsequent section focuses on cutting-edge high-entropy structural materials,highlighting developments such as nanostructured alloys,grain boundary engineering,eutectic systems,cryogenic alloys,thin films,micro-nano-lattice structures,additive manufacturing,high entropy metallic glasses,nano-precipitate strengthened alloys,composition modulation,alloy fibers,and refractory *** the following section,the emphasis shifts to functional materials,exploring HEAs as catalysts,magneto-caloric materials,corrosion-resistant alloys,radiation-resistant alloys,hydrogen storage systems,and materials for ***,the review encompasses functional high-entropy materials outside the realm of alloys,including thermoelectric,quantum dots,nanooxide catalysts,energy storage materials,negative thermal expansion ceramics,and high-entropy wave absorption *** paper concludes with an outlook,discussing future directions and potential growth areas in the *** this comprehensive review,researchers,engineers,and scientists may gain valuable insights into the recent progress and opportunities for further exploration in the exciting domains of high-entropy alloys and functional materials.

关键词： High entropy alloys Cutting-edge structural materials Cutting-edgefunctional materials

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：