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F3: An FPGA-based Transformer Fine-tuning Accelerator with Flexible Floating Point Format

IEEE Journal on Emerging and Selected Topics in Circuits and Systems 2025年

作者： He, Zerong Liu, Jing Jin, Xi Xu, Zhongguang Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Beijing100029 China University of Science and Technology of China School of Physical Science Anhui Hefei230022 China University of Science and Technology of China School of Microelectronics Anhui Hefei230026 China

Transformers have demonstrated remarkable success across various deep learning tasks. However, their inference and fine-tuning require substantial computation and memory resources, posing challenges for existing hardware platforms, particularly resource-constrained edge devices. To address these limitations, we propose F3, an FPGA-based accelerator for transformer fine-tuning. To reduce computation and memory overhead, this paper proposes a flexible floating point (FFP) format which consumes fewer resources than traditional floating-point formats of the same bitwidth. We adapt low-rank adaptation to FFP format and propose a fine-tuning strategy named LR-FFP which reduces the number of trainable parameters without compromising fine-tuning accuracy. At the hardware level, we design specialized processing elements (PEs) for the FFP format. The PE maximizes the utilization of DSP resources, enabling a single DSP to perform two multiply-accumulate operations per cycle. The PEs are organized into a systolic array (SA) to efficiently handle general matrix multiplication during fine-tuning. Through theoretical analysis and experimental evaluation, we determine the optimal dataflow and SA parameters to balance performance and resource consumption. We implement the architecture on the Xilinx VCU128 FPGA platform and F3 achieves a performance of 8.2 TFlops at 250 MHz. Compared with CPU and GPU implementations, F3 achieves speedups of 15.22× and 3.44×, respectively, and energy efficiency improvements of 70.52× and 9.44×. © 2011 IEEE.

关键词： Systolic arrays

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Unveiling a giant electrocaloric effect at low electric fields through continuous phase transition design

Advanced Powder Materials

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Advanced Powder Materials 2024年第5期3卷 33-45页

作者： Yunyao Huang Leiyang Zhang Pingji Ge Ruiyi Jing Wenjing Shi Chao Li Xiang Niu Vladimir Shur Haibo Zhang Shengguo Lu Yintang Yang Dawei Wang Xiaoqin Ke Li Jin Electronic Materials Research Laboratory Key Laboratory of the Ministry of EducationSchool of Electronic Science and EngineeringFaculty of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’an710049China School of Physics MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed MatterXi’an Jiaotong UniversityXi’an710049China Instrument Analysis Center Xi’an Jiaotong UniversityXi’an10049China Guangdong Provincial Research Center on Smart Materials and Energy Conversion Devices School of Materials and EnergyGuangdong University of TechnologyGuangzhou510006China School of Natural Sciences and Mathematics Ural Federal UniversityEkaterinburg20000Russia School of Materials Science and Engineering State Key Laboratory of Material Processing and Die&Mould TechnologyHuazhong University of Science and TechnologyWuhan430074China School of Microelectronics Xidian UniversityXi’an710071China Functional Materials and Acousto-Optic Instruments Institute School of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China

The reported electrocaloric(EC)effect in ferroelectrics is poised for application in the next generation of solidstate refrigeration technology,exhibiting substantial developmental *** study introduces a novel and efficient EC effect strategy in(1-x)Pb(Lu_(1/2)Nb_(1/2))O_(3)-xPbTiO_(3)(PLN-xPT)ceramics for low electric-fielddriven ***-field simulations provide fundamental insights into thermally induced continuous phase transitions,guiding subsequent experimental investigations.A comprehensive composition/temperature-driven phase evolution diagram is constructed,elucidating the sequential transformation from ferroelectric(FE)to antiferroelectric(AFE)and finally to paraelectric(PE)phases for x=0.10-0.18 *** measurements of EC performance highlight x=0.16 as an outstanding performer,exhibiting remarkable properties,including an adiabatic temperature change(ΔT)of 3.03 K,EC strength(ΔT/ΔE)of 0.08 K cm kV-1,and a temperature span(Tspan)of 31℃.The superior EC effect performance is attributed to the temperature-induced FE to AFE transition at low electric fields and diffusion phase transition behavior contributing to the wide *** work provides valuable insights into developing high-performance EC effect across broad temperature ranges through the strategic design of continuous phase transitions,offering a simplified and economical approach for advancing ecofriendly and efficient solid-state cooling technologies.

关键词： PbPb(Lu_(1/2)Nb_(1/2))O_(3)-xPbTiO_(3)(PLN-PT) Electrocaloric effect(ECE) Phase transition Low electric field Antiferroelectric

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Novel Multifunctional Transient Voltage Suppressor technology for Modular EOS/ESD Protection Circuit Designs 35

Novel Multifunctional Transient Voltage Suppressor Technolog...

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35th International Symposium on Power Semiconductor devices and ICs, ISPSD 2023

作者： Qi, Zhao Qiao, Ming Wei, Jingqi Shi, Yonggang Chen, Hongquan Li, Zhaoji Zhang, Bo University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Chongqing Institute of Microelectronics Industry Technology Uestc Chongqing China Institute of Electronic and Information Engineering of Uestc in Guangdong Dongguan China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen China

ISBN: (纸本)9798350396829

Transient voltage suppressor (TVS) is a kind of widely-used protection device which can enhance system surge and electrostatic discharge (ESD) robustness in small PCB area. However, different TVS cannot be fabricated using same technology due to the huge characteristic difference, which brings technology complexity in multifunctional system. In order to unity the TVS designs, a novel multifunctional TVS technology which solves non-uniformity finger triggering, voltage stacking and low leakage modular assembly issues is proposed. By using this TVS technology, the low-capacitance TVS array gets the peak current (IPP)of 5 A under the line-line capacitance (CL-L) of 0.25 pF, 5 V power clamp gets the IPP of 10 A with the dynamic resistance (Rdyn) of 0.15 Ohm, high-voltage protection diode gets the breakdown voltage (BV) of 70 V by stacking eight units and the surge TVS realizes IPP of 320 A by increasing finger amount without non-uniformity triggering. © 2023 IEEE.

关键词： Capacitance

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Generation of single-focus phase singularity by the annulusquadrangle-element coded binary square spiral zone plates

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science China(Physics,Mechanics & Astronomy) 2022年第9期65卷 72-78页

作者： Huaping Zang Zhuanglei Miao Mengguang Wang Quanping Fan Lai Wei Chuanke Wang Weimin Zhou Yilei Hua Leifeng Cao Xinlian Xue Haizhong Guo Key Laboratory of Material Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Science and Technology on Plasma Physics Laboratory Laser Fusion Research CenterChina Academy of Engineering PhysicsMianyang 621900China Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Engineering Physics Shenzhen Technology UniversityShenzhen 518118China Collaborative Innovation Center of Light Manipulations and Applications Shandong Normal UniversityJinan 250358China

Optical vortices(OVs) with unique square symmetry are widely used in various applications including particle manipulation,microscopy, and image processing. However, the undesired higher-order foci introduced by the conventional vortex lens such as square spiral zone plates(SSZPs) may lead to additional artifacts and thus degrade contrast sensitivity. In this endeavor, herein,we propose a methodology to combine the merit of SSZPs and the advantage of Gabor zone plates(GZPs) in establishing a specific single optical element, termed binary single focused square spiral zone plates(BSSZPs). In contrast to the abrupt transitions of the SSZPs, our central idea aims to realize the sinusoidal transmittance along the radial direction of SSZPs by a series of randomly distributed annulus-quadrangle-shaped nanometer structure apertures. The innovative design can simultaneously generate OVs with unique square symmetry, and eliminate the interference of higher-order foci along the propagation direction. Guided by our theoretical predication, the focusing property of such optics was further experimentally *** findings are expected to direct new avenue towards improving the performance of optical image processing and alignment system.

关键词： optical vortices higher-order diffraction spiral zone plates topological charges

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Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic MnSe2/In2Se3 heterostructure

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Physical Review Applied 2024年第6期21卷 064012-064012页

作者： Zi-Wen Zhang Yu-Fei Lang Hui-Ping Zhu Bo Li Yu-Qing Zhao Bin Wei Wu-Xing Zhou School of Physics and Electronics Science Hunan University of Science and Technology Hunan Provincial Key Laboratory of Intelligent Sensors and New Sensor Materials Xiangtan 411201 Hunan People’s Republic of China Institute of Microelectronics Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Beijing 100029 China SKLSM Institute of SemiconductorsChinese Academy of Sciences Beijing 100083 China School of Materials Science and Engineering Hunan University of Science and Technology Xiangtan 411201 People’s Republic of China

The coupling of ferromagnetic and ferroelectric materials has sparked great interest in the field of spintronics due to nonvolatile electrical magnetic control. In this work, we propose two-dimensional multiferroic MnSe2/In2Se3 van der Waals (vdW) heterostructure to investigate the magnetoelectric coupling. The electronic structure, magnetic anisotropy, magnetic phase transition, and transport properties were investigated by employing the first-principles calculations in combination with the nonequilibrium Green’s function method. The results reveal that polarization reversal not only can effectively tune the Schottky-to-Ohmic contact but also reorients the magnetic easy axis. In addition, Curie temperature (Tc) was predicted based on the Heisenberg model and Monte Carlo simulations, and the competition between interfacial charge injection and lattice mismatch determines the Tc of MnSe2/In2Se3 heterostructure. Furthermore, we constructed the vdW MnSe2/In2Se3-based magnetic-tunnel-junction and ferroelectric-tunnel-junction nanodevice, which exhibits high tunneling magnetoresistance of up to 1.805×103% and a spin-filter efficiency of up to 98.5%. Our findings demonstrate the significant potentials of multiferroic MnSe2/In2Se3 vdW heterostructures in designing a next-generation spintronic and nonvolatile memory device.

关键词： Magnetoelectric effect Spintronics Multiferroic tunnel junctions Semiconductor compounds Transition metal dichalcogenides Van der Waals systems Density functional calculations Nonequilibrium Green's function

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Carbonized waste milk powders as cathodes for stable lithium-sulfur batteries with ultra-large capacity and high initial coulombic efficiency

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Green Energy & Environment 2022年第5期7卷 1071-1083页

作者： Rabia Khatoon Sanam Attique Rumin Liu Sajid Rauf Nasir Ali Luhong Zhang Yu-Jia Zeng Yichuan Guo Yusuf Valentino Kaneti Jongbeom Na Haichao Tang Hongwen Chen Yang Tian Jianguo Lu State Key Laboratory of Silicon Materials Key Laboratory for Biomedical Engineering of Ministry of EducationSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310027China Institute for Composites Science Innovation School of Materials Science and EngineeringZhejiang UniversityHangzhou310027China Hubei Collaborative Innovation Centre for Advanced Organic Chemical Materials Faculty of Physics and Electronic ScienceHubei UniversityWuhanHubei430062China State Key Laboratory for Silicon Materials Key Laboratory of Quantum Technology and DevicesDepartment of PhysicsZhejiang UniversityHangzhou310027China College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen518060China International Center for Materials Nanoarchitectonics(WPI-MANA) National Institute for Materials Science(NIMS)1-1NamikiIbaraki305-0044Japan School of Chemical Engineering&Australian Institute for Bioengineering and Nanotechnology(AIBN) The University of QueenslandBrisbaneQLD4072Australia

To explore the natural resources as sustainable precursors offers a family of green *** use of bio-waste precursors especially the remaining from food processing is a scalable,highly abundant,and cost-effective *** waste materials is highly important especially for new materials discovery in emerging energy storage technologies such as lithium sulfur batteries(LSBs).Herein,waste milk powder is carbonized and constructed as the sulfur host with the hollow micro-/mesoporous framework,and the resulting carbonized milk powder and sulfur(CMP/S) composites are employed as cathodes for *** is revealed that the hollow micro-/mesoporous CMP/S framework can not only accommodate the volume expansion but also endow smooth pathways for the fast diffusion of electrons and Li-ions,leading to both high capacity and long cycling *** CMP/S composite electrode with 56 wt% loaded sulfur exhibits a remarkable initial capacity of 1596 mAh g^(-1) at 0.1 C,corresponding to 95% of the theoretical *** at a rate of 1 C,it maintains a high capacity of 730 mAh g^(-1) with a capacity retention of 72.6% after 500 cycles,demonstrating a very low capacity fading of only 0.05% per ***,the Coulombic efficiency is always higher than 96%during all the *** only used source material is expired waste milk powders in our *** believe that this "trash to treasure" approach will open up a new way for the utilization of waste material as environmentally safe and high performance electrodes for advanced LSBs.

关键词： composites powders initial

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Emergence of High-Temperature Superconducting Phase in Pressurized La_(3)Ni_(2)O_(7)Crystals

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Chinese Physics Letters 2023年第11期40卷 114-119页

作者：侯钧杨芃焘刘子儀李婧嫄单鹏飞马良王罡王宁宁郭海中孙建平 Yoshiya Uwatoko 王猛张广铭王铂森程金光 Beijing National Laboratory for Condensed Matter Physics and Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China Center for Neutron Science and Technology Guangdong Provincial Key Laboratory of Magnetoelectric Physics and DevicesSchool of PhysicsSun Yat-Sen UniversityGuangzhou 510275China Key Laboratory of Materials Physics(Ministry of Education) School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Institute of Quantum Materials and Physics Henan Academy of SciencesZhengzhou 450046China Institute for Solid State Physics University of TokyoKashiwaChiba 277-8581Japan State Key Laboratory for Low dimensional Quantum Physics Department of PhysicsTsinghua UniversityBeijing 100084China

The recent report of pressure-induced structural transition and signature of superconductivity with T_(c)≈80 K above 14 GPa in La_(3)Ni_(2)O_(7)crystals has garnered considerable *** further elaborate this discovery,we carried out comprehensive resistance measurements on La_(3)Ni_(2)O_(7)crystals grown in an optical-image floating zone furnace under oxygen pressure(15 bar)using a diamond anvil cell(DAC)and cubic anvil cell(CAC),which employ a solid(KBr)and liquid(glycerol)pressure-transmitting medium,*** 1 measured in the DAC exhibits a semiconducting-like behavior with large resistance at low pressures and gradually becomes metallic upon *** pressures P 13.7 GPa we observed the appearance of a resistance drop of as much as~50%around 70 K,which evolves into a kink-like anomaly at pressures above 40 GPa and shifts to lower temperatures gradually with increasing magnetic *** observations are consistent with the recent report mentioned *** the other hand,sample 2 measured in the CAC retains metallic behavior in the investigated pressure range up to 15 *** hump-like anomaly in resistance around~130 K at ambient pressure disappears at P≥2 *** the pressure range of 11–15 GPa we observed the gradual development of a shoulder-like anomaly in resistance at low temperatures,which evolves into a pronounced drop of resistance of 98%below 62 K at 15 GPa,reaching a temperature-independent resistance of 20μΩbelow 20 ***,this resistance anomaly can be progressively shifted to lower temperatures by applying external magnetic fields,resembling a typical superconducting *** on sample 3 in the CAC reproduce the resistance drop at pressures above 10 GPa and realize zero resistance below 10 K at 15 GPa even though an unusual semiconducting-like behavior is retained in the normal *** on these results,we constructed a dome-shaped superconducting phase diagram and discuss some issues regarding the sa

关键词： behavior metallic Crystal

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First Demonstration of High-Sensitivity (NEP-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3Photodetectors and Oxide Thin-Film-Transistors

First Demonstration of High-Sensitivity (NEP-1/2) Back-Illum...

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2022 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2022

作者： Qin, Yuan Lu, Congyan Yu, Zhaoan Yao, Zhihong Wu, Feihong Dong, Danian Zhao, Xiaolong Xu, Guangwei Zhang, Yuhao Long, Shibing Li, Ling Liu, Ming Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Microelectronics Devices & Integration Technology Beijing China School of Microelectronics University of Science and Technology of China Hefei China Virginia Polytechnic Institute and State University Center of Power Electronics Systems BlacksburgVA United States

ISBN: (纸本)9781665497725

We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga2O3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10-13A, high on/off ratio of 5×108, and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fWHz-1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×1015Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 W/cm2. This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications. © 2022 IEEE.

关键词： Gallium compounds

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A Novel Punch through Breakdown Trench MOS with Self-Adjustable Resistor for Low Temperature Coefficient of Breakdown Voltage 5

A Novel Punch through Breakdown Trench MOS with Self-Adjusta...

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5th IEEE International Conference on Electronics technology, ICET 2022

作者： Wang, Tongyang Li, Zehong Huang, Lingxuan Liu, Xiaohan University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China

ISBN: (纸本)9781665485081

In this paper, a novel punch through breakdown trench MOS with self-adjustable resistor (SAR-PT-TMOS) is proposed for low temperature coefficient of breakdown voltage. The SAR-PT-TMOS features a P-doping self-adjustable resistor (SAR) which is connected to the source electrode and sandwiched by the trench gate and N-source region. As the temperature increases, the width of space charge region between the P-SAR region and the N-source region decreases, which further increases the width of SAR and decreases the resistance of SAR. Therefore, the voltage drop across SAR has a negative temperature coefficient and provides a negative feedback voltage for the breakdown voltage. As a result, the temperature coefficient of breakdown voltage can be reduced by 94.7% compared with that of the conventional punch through breakdown trench MOS (PTTMOS) with only 12.7% increment of on-state voltage drop. © 2022 IEEE.

关键词： Temperature

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Highly spectra-stable pure blue perovskite light-emitting diodes based on copper and potassium co-doped quantum dots

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Nano Research 2023年第5期16卷 7654-7660页

作者： Fang Chen Wenjie Ming Yongfei Li Yun Gao Lea Pasquale Kexin Yao Boyuan Huang Qiuting Cai Guochao Lu Jizhong Song Mirko Prato Xingliang Dai Haiping He Zhizhen Ye School of Materials Science and Engineering State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials Institute of WenzhouZhejiang UniversityWenzhou 325006China Wenzhou XINXINTAIJING Tech.Co.Ltd. Wenzhou 325006China Shanxi‐Zheda Institute of Advanced Materials and Chemical Engineering Taiyuan 030000China Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhen 518055China Multi-scale Porous Materials Center Institute of Advanced Interdisciplinary Studies&School of Chemistry and Chemical EngineeringChongqing UniversityChongqing 400044China Materials Characterization Facility Istituto Italiano di TecnologiaGenova 16163Italy School of Physics and Microelectronics Zhengzhou UniversityZhengzhou 450052China

Halide perovskite light emitting diodes(LEDs)have gained great progress in recent ***,mixed-halide perovskites for blue LEDs usually suffer from electroluminescence(EL)spectra shift at a high applied voltage or current density,limiting their *** this work,we report a strategy of using single-layer perovskite quantum dots(QDs)film to tackle the electroluminescence spectra shift in pure-blue perovskite LEDs and improve the LED efficiency by co-doping copper and potassium in the mixed-halide perovskite *** a result,we obtained pure-blue halide perovskite QD-LEDs with stable EL spectra centred at 469 nm even at a current density of 1,617 mA·cm^(−2).The optimal device presents a maximum external quantum efficiency(EQE)of 2.0%.The average maximum EQE and luminance of the LEDs are 1.49%and 393 cd·m^(−2),increasing 62%and 66%compared with the control *** study provides an effective strategy for achieving spectra-stable and highly efficient pure-blue perovskite LEDs.

关键词： light-emitting diode blue LED perovskite quantum dot stable electroluminescence spectra metal doping

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