检索结果-内蒙古大学图书馆

2024 IEEE International Electron devices Meeting, IEDM 2024

作者： Xu, Pan Jiang, Pengfei Yang, Yang Peng, Xueyang Wei, Wei Gong, Tiancheng Wang, Yuan Long, Xiao Niu, Jiebin Xu, Zhongguang Zhu, Chenxin Wu, Zhenhua Luo, Qing Liu, Ming Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing China Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China University of Science and Technology of China Anhui Hefei China

ISBN: (纸本)9798350365429

HfO2-based FeFET paves the way for the next generation NVM thecnology, however, demands for high memory window (MW) and roubust reliability (especially the endurance) cannot be combined in the current reported devices, and the contradiction of high MW and low thermal budget (aiming for BEOL compatibility) also needs to be solved. In this work, we propose an integrated ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) and amorphous In-Ga-Zn-O (a- IGZO) channel FeFET with a maximum 10V MW and prominent endurance up to 109. Workfunction (WF) engineering is utilized to regualtethe intrinsic Vt to improve the PGM/ERS efficiency with full-loop polarization switching, and the adopted Mo gate can effectively reduce the thermal budget to 300°Censuringa fully BEOL compatibility. Then with O3-plasma treatment to the gate electrode, the introduced tunneling layer can futher improve the MW by gate charge injection. The demonstrated FeFET shows great 3-bit/cell storage ability without states overlapping, high Ion/Ioff ratio (>107), as well as great linearity and high Gmax/Gmin (286) during synaptic weight modulation. © 2024 IEEE.

关键词： Budget control

来源：评论

学校读者我要写书评

暂无评论

Investigation of Electrical Characteristics on Morphotropic Phase Boundary of Hf1-xZrxO2for Dynamic Random Access Memories

Investigation of Electrical Characteristics on Morphotropic ...

引用

2023 China Semiconductor Technology International Conference, CSTIC 2023

作者： Zhong, Kun Yin, Huaxiang Zhang, Zhaohao Zhang, Fan Key Laboratory of Microelectronics Devices and Integrated Technology China Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China Xidian University Key Laboratory of Wide Bandgap Semiconductor Materials China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9798350311006

This paper investigates the properties of different Zr compositions in Hf1-xZrxO2 films. Due to the morphotropic phase boundary (MPB) between the orthorhombic ferroelectric phase and the tetragonal anti-ferroelectric phase, a maximum κ value of 55 was obtained for 9 nm Hf0.4Zr0.6O2 films. Furthermore, the sufficiently low leakage current of the capacitors was confirmed. Finally, a promising switching endurance of up to 5× 109 cycles was also performed, which becomes one of the driving forces for next-generation dynamic random access memories (DRAM) cell capacitor dielectric materials. © 2023 IEEE.

关键词： Ferroelectricity

来源：评论

学校读者我要写书评

暂无评论

A 256 Kbit Hf0.5Zr0.5O2-based FeRAM Chip with Scaled Film Thickness (sub-8nm), Low Thermal Budget (350oC), 100% Initial Chip Yield, Low Power Consumption (0.7 pJ/bit at 2V write voltage), and Prominent Endurance (>1012)

A 256 Kbit Hf0.5Zr0.5O2-based FeRAM Chip with Scaled Film Th...

引用

2023 International Electron devices Meeting, IEDM 2023

作者： Jiang, Pengfei Jiang, Haijun Yang, Yang Tai, Lu Wei, Wei Gong, Tiancheng Wang, Yuan Xu, Pan Lv, Shuxian Wang, Boping Gao, Jianfeng Li, Junfeng Luo, Jun Yang, Jianguo Luo, Qing Liu, Ming Shandong University School of Information Science and Engineering Qingdao China Institute of Microelectronics Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing China Institute of Microelectronics Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Beijing China Zhangjiang Lab Shanghai China

ISBN: (纸本)9798350327670

In this work, we successfully resolve the remanent polarization (Pr) degradation issue, which is caused by the thermal budget decreasing and the film thickness scaling of Hf0.5Zr0.5O2 (HZO), and co-integrate the TiN/HZO/TiN capacitors with large initial Pr and low operating voltage in the Back-End-of -Line (BEOL) of 130nm CMOS technology to provide a 256 Kbit 1T1C FeRAM chip. Firstly, we prove that the Pr degradation is caused by the increasing component of anti-ferroelectric (AFE) phase. Then, utilizing the pre-crystallization engineering and O3 treatment to the TiN bottom electrode (BE), not only the formation of t-phase is effectively suppressed, but also the required annealing temperature is reduced. The enhancement of ferroelectricity is related to the small thermal expansion of TiO2 interface layer, which can induce large tensile stress to HZO during the annealing process. Moreover, the oxidization of TiN BE can prevent it absorbing oxygen from HZO, and the reduced oxygen vacancy (Vo) defects can improve both the retention and TDDB characteristics. Based on the above optimizations, the chip demonstrates 100% initial chip yield, >150mV sense margin after 1012 write cycles, power consumption of 0.7 pJ/bit at 2V write voltage, over 1012 endurance and 10 years retention. © 2023 IEEE.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Step-edge controlled fast growth of wafer-scale MoSe_(2)films by MOCVD

引用

Nano Research 2023年第7期16卷 9577-9583页

作者： Rui Ji Jing Liao Lintao Li Rongji Wen Mengjie Liu Yifeng Ren Jianghua Wu Yunrui Song Minru Qi Zhixing Qiao Liwei Liu Chengbing Qin Yu Deng Yongtao Tian Suotang Jia Yufeng Hao Key Laboratory of Material Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China National Laboratory of Solid State Microstructures College of Engineering and Applied SciencesJiangsu Key Laboratory of Artificial Functional Materialsand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China College of Medical Imaging Shanxi Medical UniversityTaiyuan 030001China MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing 100081China

Two-dimensional(2D)transition metal dichalcogenides(TMDCs),due to their unique physical properties,have a wide range of applications in the next generation of electronics,optoelectronics,and ***-scale preparation of high-quality TMDCs films is critical to realize these potential *** we report a study on metal-organic chemical vapor deposition(MOCVD)growth of wafer-scale MoSe_(2)films guided by the crystalline step edges of miscut sapphire *** established that the nucleation density and growth rate of MoSe_(2)films were positively correlated with the step-edge density and negatively with the growth *** a certain temperature,the MoSe_(2)domains on the substrate with high step-edge density grow faster than that with low *** a result,wafer-scale and continuous MoSe_(2)films can be formed in a short duration(30 min).The MoSe_(2)films are of high crystalline quality,as confirmed by systematic Raman and photoluminescence(PL)*** results provide an important methodology for the rapid growth of wafer-scale TMDCs,which may promote the application of 2D semiconductors.

关键词： MoSe_(2) nucleation density transition metal dichalcogenides metal-organic chemical vapor deposition(MOCVD) waferscale two-dimensional(2D)semiconductor

来源：评论

学校读者我要写书评

暂无评论

First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip

First Demonstration of a Design Methodology for Highly Relia...

引用

2023 IEEE Symposium on VLSI Technology and circuits, VLSI Technology and circuits 2023

作者： Gong, Tiancheng Xu, Lihua Wei, Wei Jiang, Pengfei Yuan, Peng Nie, Bowen Huang, Yuanquan Wang, Yuan Yang, Yang Gao, Jianfeng Li, Junfeng Luo, Jun Wang, Lingfei Yang, Jianguo Luo, Qing Li, Ling Chung, Steve S. Liu, Ming Institute of Microelectronics Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing China Institute of Microelectronics Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Beijing China Institute of Electronics National Yang Ming Chiao Tung University Taiwan

ISBN: (纸本)9784863488069

In achieving a reliable operation of FRAM arrays at high temperature (300K-400K), we provide an optimized operation design methodology considering the temperature effect on 128kb ITIC FRAM chip for the first time. Firstly, we found that the conventional voltage selection scheme in ITIC FRAM array is not applicable at high temperature since the Pr value read by low voltage decreases at high temperature, leading to a poor yield. Then, the mechanism of Pr degradation under high temperature is systematically investigated through material characterizations and electrical measurements. It was found that the increase of the internal electric field (Ebias) caused by electron de-trapping mainly contributes to the Pr degradation. Moreover, a KMC model considering Ebias is developed, and the optimum voltage, which can mitigate the temperature effect from 300K-400K, is predicted. This predicted voltage is finally validated on 128kb ITIC FeRAM chip, and excellent properties including non-volatile (150°C >106s) and high endurance (>1011) under the predicted voltage are also demonstrated. © 2023 JSAP.

关键词： Temperature

来源：评论

学校读者我要写书评

暂无评论

Ferroelectric-controlled graphene plasmonic surfaces for all-optical neuromorphic vision

引用

Science China(Technological Sciences) 2024年第3期67卷 765-773页

作者： CHEN JianBo LIU Yu LI ShangDong LIN Lin LI YaDong HUANG Wen GUO JunXiong School of Electronic Information and Electrical Engineering Institute for Advanced StudyChengdu UniversityChengdu 610106China School of Integrated Circuits Tsinghua UniversityBeijing 100084China School of Integrated Circuits(National Exemplary Schoolof Microelectronics) Universityof Electronic Science and Technologyof China Chengdu 610054China Jincheng Research Institute of Opto-mechatronics Industry Jincheng 048000China Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems Jincheng 048000China Engineering Research Center of Digital Imaging and Display Ministry of EducationSoochow UniversitySuzhou 215006China

Artificial visual systems can recognize desired objects and information from complex environments, and are therefore highly desired for pattern recognition, object detection, and imaging applications. However, state-of-the-art artificial visual systems with high recognition performances that typically consist of electronic devices face the challenges of requiring huge storage space and high power consumption owing to redundant data. Here, we report a terahertz(THz) frequency-selective surface using a graphene split-ring resonator driven by ferroelectric polarization for efficient visual system applications. The downward polarization of the ferroelectric material offers an ultrahigh electrostatic field for doping p-type graphene with an anticipated Fermi level. By optimizing the geometric parameters of the devices and modulating the carrier behaviors of graphene, our plasmonic devices exhibit a tunable spectral response in a range of 1.7–6.0 THz with continuous transmission values. The alloptical neural network using graphene plasmonic surfaces designed in this study exhibited excellent performance in visual preprocessing and convolutional filtering and achieved an ultrahigh recognition accuracy of up to 99.3% in training the Modified National institute of Standards and Technology(MNIST) handwritten digit dataset. These features demonstrate the great potential of graphene plasmonic devices for future smart artificial vision systems.

关键词： graphene plasmon ferroelectric frequency selective surface artificial vision system

来源：评论

学校读者我要写书评

暂无评论

Demonstration of vertical Ga2O3 Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology

引用

The European Physical Journal Special Topics 2025年 1-8页

作者： Liu, Hongyu Han, Shida Lu, Xiaoli Wang, Yuangang Dun, Shaobo Han, Tingting Lv, Yuanjie Feng, Zhihong State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research Institute Shijiazhuang China

In this letter, by implementing thermal oxidation (TO) technology, vertical Ga2O3 Schottky barrier diodes were directly fabricated on a heavily doped single-crystal (001) β-Ga2O3 substrate without epitaxial growth. The electron concentration in near-surface region of the Ga2O3 substrate was greatly reduced by introducing high-temperature TO processing. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) results indicated that the oxygen vacancy (VO) content in the near-surface region was significantly decreased, while a 500–700 nm acceptor-like defect energy level combining multiple gallium vacancy (VGa) generated, and compensated for, the free carriers after annealing in an oxygen-rich atmosphere at high temperature. The annealing temperature and time were analyzed and optimized. Finally, vertical β-Ga2O3 SBDs with a breakdown voltage (Vbr) of 460 V, specific on-resistance (Ron,sp) of 10.5 mΩ·cm2 and a power figure-of-merit (PFOM) of 20.2 MW/cm2, were demonstrated when the annealing temperature and time were 900 °C and 2 h. These results indicate that vertical β-Ga2O3 SBDs can be directly fabricated on a single-crystal substrate without epitaxial growth, providing a new method of reducing the cost of such devices.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Vertical SnS2/Si heterostructure for tunnel diodes

引用

Science China(Information Sciences) 2020年第2期63卷 189-195页

作者： Rundong JIA Qianqian HUANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University

Tunneling FET（TFET） is considered as one of the most promising low-power electronic devices,however, suffers from the low drive current. Heterostructure TFET with low effective tunnel barrier height based on traditional 3D materials can obtain large tunnel current but deteriorated off-state current induced by the lattice mismatch. van der Waals heterostructure TFET based on 2D materials can obtain danglingbond-free interface for suppressed off-state current but face the challenge of controllable and stable doping technology. As the critical building block of the TFET, tunnel diode based on the 2D/3D heterostructure is proposed in this study and experimentally demonstrated. Combination of the pristine interface of 2D materials and matured doping technology in the traditional 3D bulk materials, tunnel diodes based on the 2D/3D heterostructures are expected to realize low leakage current and high on current simultaneously,showing great potential in low-power electronics. The N+SnS2/P+Si heterostructure with effective tunnel barrier of 0.17 eV theoretically is considered for the first time and selected as the optimal material platform for tunnel diodes. The N+SnS2/P+Si tunnel diode demonstrated experimentally shows the high current density of 1 μA/μm2, which is the highest one among the reported tunnel diodes based on the 2D/group IV materials. The tunneling current is also confirmed by low-temperature measurements. This study shows the great potential of the 2D/3D heterostructure for low-power tunneling devices.

关键词： 2D/3D heterostructure SnS2/Si tunnel barrier tunnel diode energy-efficient

来源：评论

学校读者我要写书评

暂无评论

Fatigue of ferroelectric field effect transistor: mechanisms and optimization strategies

引用

Journal of Semiconductors 2025年第6期46卷 66-78页

作者： Yu Song Pengfei Jiang Pan Xu Xueyang Peng Qianqian Wei Qingyi Yan Wei Wei Yuan Wang Xiao Long Tiancheng Gong Yang Yang Eskilla Venkata Ramana Qing Luo Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of SciencesBeijing 100029China Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 101408China I3N-Aveiro Department of PhysicsUniversity of AveiroAveiro3810193Portugal

The novel HfO2-based ferroelectric field effect transistor(FeFET)is considered a promising candidate for next-genera-tion nonvolatile memory(NVM).However,a series of reliability issues caused by the fatigue effect hinder its further ***,a comprehensive understanding of the fatigue mechanisms of the device and optimization strategies is essen-tial for its *** fundamental mechanism of the fatigue effect is attributed to charge trapping and trap generation based on the current studies,and the underlying causes,occurrence locations and specific impacts are analyzed in this *** particular,the asymmetric trapping/detrapping of electrons and holes,as well as the relationship between the ferroelectric(FE)polarization and charge trapping,are given particular *** categorizing and summarizing the current progress,we propose a series of optimization strategies derived based on the fatigue mechanisms.

关键词： FeFET fatigue charge trapping trap generation

来源：评论

学校读者我要写书评

暂无评论

Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices

引用

Journal of Semiconductors 2023年第1期44卷 43-55页

作者： Xinyu Huang Xu Han Yunyun Dai Xiaolong Xu Jiahao Yan Mengting Huang Pengfei Ding Decheng Zhang Hui Chen Vijay Laxmi Xu Wu Liwei Liu Yeliang Wang Yang Xu Yuan Huang Advanced Research Institute of Multidisciplinary Science Beijing Institute of TechnologyBeijing 100081China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing 100081China BIT Chongqing Institute of Microelectronics and Microsystems Chongqing 401332China

Moiré superlattices are formed when overlaying two materials with a slight mismatch in twist angle or lattice constant. They provide a novel platform for the study of strong electronic correlations and non-trivial band topology, where emergent phenomena such as correlated insulating states, unconventional superconductivity, and quantum anomalous Hall effect are discovered. In this review, we focus on the semiconducting transition metal dichalcogenides(TMDs) based moiré systems that host intriguing flat-band physics. We first review the exfoliation methods of two-dimensional materials and the fabrication technique of their moiré structures. Secondly, we overview the progress of the optically excited moiré excitons, which render the main discovery in the early experiments on TMD moiré systems. We then introduce the formation mechanism of flat bands and their potential in the quantum simulation of the Hubbard model with tunable doping, degeneracies, and correlation strength. Finally, we briefly discuss the challenges and future perspectives of this field.

关键词： flat-band physics two-dimensional materials moirésuperlattices Hubbard model moiréexcitons

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：