检索结果-内蒙古大学图书馆

Contact size scaling of a W-contact phase-change memory cell based on numerical simulation

Journal of Semiconductors 2012年第10期33卷 53-57页

作者：魏益群林信南贾宇超崔小乐张兴宋志棠 Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University TSRC Key Laboratory of Microelectronic Devices and CircuitsInstitute of MicroelectronicsSchool of Electronics and Computer SciencePeking University State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences

In the design of phase-change memory（PCM）,it is important to perform numerical simulations to predict the performances of different device *** work presents a numerical simulation using a coupled system including Poisson＇s equation,the current continuity equation,the thermal conductivity equation,and phase-change dynamics to simulate the thermal and electric characteristics of phase-change *** method discriminates the common numerical simulation of PCM cells,from which it applies Possion＇s equation and current continuity equations instead of the Laplace equation to depict the electric characteristics of PCM cells,which is more adoptable for the semiconductor characteristics of phase-change *** results show that the simulation agrees with the measurement,and the scalability of PCM is predicted.

关键词： phase-change memory scaling numerical simulation

来源：评论

学校读者我要写书评

暂无评论

A 150%enhancement of PMOSFET mobility using hybrid orientation

引用

Journal of Semiconductors 2012年第6期33卷 20-23页

作者：唐昭焕谭开洲崔伟张静钟怡徐世六郝跃张鹤鸣胡辉勇张正璠胡刚毅 Science and Technology on Analog Integrated Circuit Laboratory Sichuan Institute of Solid-State Circuits China Electronics Technology Group Corp Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University

A high-performance PMOSFET based on silicon material of hybrid orientation is *** orientation wafers,integrated by（100） and（110） crystal orientation,are fabricated using silicon-silicon bonding, chemical mechanical polishing,etching silicon and non-selective expitaxy.A PMOSFET with W/L = 50μm/8μm is also processed,and the measured results show that the drain-source current and peak mobility of the PMOSFET are enhanced by up to 50.7%and 150%at V_（gs） =-15 V and V_（ds） =-0.5 V,*** mobility values are higher than that reported in the literature.

关键词： hybrid orientation non-selective expitaxy carrier mobility （110） crystal orientation PMOSFET chemical mechanical polishing

来源：评论

学校读者我要写书评

暂无评论

A SPICE model for a phase-change memory cell based on the analytical conductivity model

引用

Journal of Semiconductors 2012年第11期33卷 52-56页

作者：魏益群林信南贾宇超崔小乐何进张兴 The Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Peking University Shenzhen SOC Key Laboratory PKU-HKUSTShenzhen-Hong Kong Institute The Kev Laboratorv of Integrated Microsvstems.Shenzhen Graduate School of Peking University Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsSchool of Electronics and Computer SciencePeking University

By way of periphery circuit design of the phase-change memory,it is necessary to present an accurate compact model of a phase-change memory cell for the circuit *** with the present model,the model presented in this work includes an analytical conductivity model,which is deduced by means of the carrier transport theory instead of the fitting model based on the *** addition,this model includes an analytical temperature model based on the 1D heat-transfer equation and the phase-transition dynamic model based on the JMA equation to simulate the phase-change *** above models for phase-change memory are integrated by using Verilog-A language,and results show that this model is able to simulate theⅠ-Ⅴcharacteristics and the programming characteristics accurately.

关键词： phase-change memory compact model analytical conductivity

来源：评论

学校读者我要写书评

暂无评论

Clock Controlled Hybrid-latch flip-flops Design

Clock Controlled Hybrid-latch flip-flops Design

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Jia Song Yan Shilin Wu Fengfeng Wang Yuan Key Laboratory of Microelectronics Devices and Circuits(MOE) Institute of Microelectronics Peking University

ISBN: (纸本)9781467324748

In order to obtain power efficient flip-flops,two novel Hybrid-latch schemes are introduced in this paper. They achieve high performance by shortening the critical data path and power efficiency by eliminating the inverter chain pulse *** simulation under SMIC 90nm process revealed that the two new flip-flop have excellent power and speed performance compared to the referenced *** can reduce 44.5% and 51.4% power dissipation,29.2% and 44.5% clock-to-output latency and 65.6% and 68.4% PDP.

关键词： simulation Hybrid Clock Controlled Hybrid-latch flip-flops Design PDP

来源：评论

学校读者我要写书评

暂无评论

Selective Parallel CRC Computation Schemes for RapidIO

Selective Parallel CRC Computation Schemes for RapidIO

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Wu Fengfeng Jia Song Xu Heqing Wang Yuan Zhang Dacheng Key Laboratory of Microelectronics Devices and Circuits（MOE） Institute of Microelectronics Peking University

ISBN: (纸本)9781467324748

RapidIO is a high-performance standard for embedded *** to different ending alignments of RapidIO packets,the corresponding CRC computations should be *** this paper,two selective parallel computation schemes based on simplified intermediate value equations are *** with the reference designs,the power dissipations can be reduced by more than 30% meanwhile better balances between the speeds and resource consumptions can be achieved.

关键词： achieved speeds consumptions

来源：评论

学校读者我要写书评

暂无评论

Enhanced Nitrogen Plasma Immersion Passivation Method for High-K/Ge Stack Formation

Enhanced Nitrogen Plasma Immersion Passivation Method for Hi...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Meng Lin Quanxin Yun Min Li Zhiqiang Li Xia An Ming Li Xing Zhang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

In this paper,an enhanced Ge surface passivation method by nitrogen plasma immersion with adding RIE power is presented and experimentally demonstrated. With the acceleration effect resulting from electric field induced by proper RIE power,more nitrogen plasma will drift to Ge surface to passivate the dangling *** is shown that nitrogen plasma immersion with RIE power is efficient in suppressing Ge suboxide growth during high-K dielectric deposition,reducing interface states and improving the C-V characteristic of both p-MOS and n-MOS capacitors in terms of flat-band voltage and hysteresis.

关键词： MOS RIE Enhanced Nitrogen Plasma Immersion Passivation Method for High-K/Ge Stack Formation

来源：评论

学校读者我要写书评

暂无评论

Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron SOI pMOSFETs

Investigation on Channel Hot Carrier Degradation of Ultra De...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Liang-Xi Huang Xia An Fei Tan Wei-Kang Wu Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

ISBN: (纸本)9781467324748

The bias dependence of Channel Hot Carrier (CHC)degradation in 0.18μm SOI pMOSFETs is investigated in this *** classical bias modes (Vg@Isubmax and Vg=Vd)were applied to analyze the CHC degradation behavior of SOI *** results show that at low Vg,hot carriers injection produced by impact ionization is the main factor contributed to ***,the degradation stressed at high Vg is controlled by both CHC and NBTI effect,showing the NBTI-like behavior at room temperature which indicates that NBTI effect is the dominant factor.A possible mechanism is put forward to explain the enhanced CHC degradation under Vg=Vd compared with pure NBTI *** influence of floating body on the performance degradation of PDSOI devices is also investigated.

关键词： SOI CHC Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron SOI pMOSFETs

来源：评论

学校读者我要写书评

暂无评论

A multi-region trap characterization method and its reliability application on STI-based high-voltage LDMOSFETs

A multi-region trap characterization method and its reliabil...

引用

International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Yandong He Ganggang Zhang Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits Peking University Beijing China

The STI-based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular with its better tradeoff between breakdown voltage and on-resistance and its compatibility with the standard complementary metal-oxide-semiconductor (CMOS) process. In this paper, a multi-region trap characterization direct current current-voltage (MR-DCIV) technique was proposed to characterize interface state generation in both channel and STI drift regions. The correlation between interface trap and MR-DCIV current has been verified by two-dimensional device simulation. Degradation of STI-based LDMOS transistors in various reliability stress modes is investigated experimentally by proposed technique. The impact of interface state location on device electrical characteristics is analyzed from measurement and simulation. Our study reveals that OFF-state stress becomes the worst degradation mode in term of the on-resistance degradation, which is attributed to interface state generation under STI drift region.

关键词： Stress Interface states Degradation Logic gates Substrates Voltage measurement

来源：评论

学校读者我要写书评

暂无评论

A Radiation Detection Readout Circuit with Current Feedback Baseline Holder

A Radiation Detection Readout Circuit with Current Feedback ...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Xiao-Lu Chen Ya-Cong Zhang Wen-Gao Lu Zhong-Jian Chen Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

This paper describes a radiation detection readout circuit for portable dosimeter which is aimed at low power,low noise and high counting rate.A current feedback baseline holder circuit is proposed to solve the baseline shift problem without any other performance *** core circuit has been implemented in 0.35μm CMOS *** achieves 46mV/fC conversion gain,200kcps counting rate and consumes 260μA current from 3.3V *** no detector is connected to the chip,the equivalent input noise charge is 0.094fC rms.

关键词： A Radiation Detection Readout Circuit with Current Feedback Baseline Holder

来源：评论

学校读者我要写书评

暂无评论

Reactive Ion Etching of Germanium Using SF6/CHF3/He gas mixture

Reactive Ion Etching of Germanium Using SF6/CHF3/He gas mixt...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Min Li Meng Lin Quanxin Yun Zhiqiang Li Xia An Ming Li Xing Zhang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

The effect of CHF3 gas flow rate on the trench shape and etch rate was studied for germanium-based device *** this study,a sidewall tilt angle larger than 80°with the trench depth of 300nm was achieved by optimizing the flow rate ratio of SF6/CHF3/He gas ***,based on the experimental results,a Linear Reactive Ion Etching(RIE) Model was proposed to predict the optimized composition of the SF6/CHF3/He gas mixture to obtain steep trenches with low etch rate,which may provide the guideline for the germanium etching process design.

关键词： RIE Reactive Ion Etching of Germanium Using SF6/CHF3/He gas mixture CHF

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：