检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

306 篇 会议
116 篇 期刊文献

馆藏范围

422 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

288 篇 工学
- 192 篇 电子科学与技术（可...
- 97 篇 材料科学与工程（可...
- 47 篇 电气工程
- 41 篇 计算机科学与技术...
- 29 篇 化学工程与技术
- 17 篇 仪器科学与技术
- 16 篇 信息与通信工程
- 13 篇 光学工程
- 12 篇 控制科学与工程
- 11 篇 机械工程
- 10 篇 动力工程及工程热...
- 9 篇 冶金工程
- 8 篇 软件工程
- 6 篇 力学（可授工学、理...
- 4 篇 生物医学工程（可授...
- 3 篇 核科学与技术
- 2 篇 环境科学与工程（可...
- 2 篇 安全科学与工程
82 篇 理学
- 58 篇 物理学
- 31 篇 化学
- 13 篇 数学
- 3 篇 系统科学
- 2 篇 天文学
- 2 篇 统计学（可授理学、...
- 1 篇 地球物理学
16 篇 管理学
- 14 篇 管理科学与工程(可...
- 2 篇 图书情报与档案管...
2 篇 军事学
- 2 篇 军队指挥学
1 篇 经济学
- 1 篇 应用经济学
1 篇 医学
1 篇 艺术学

主题

32 篇 logic gates
26 篇 microelectronics
21 篇 switches
18 篇 silicon
17 篇 cmos technology
16 篇 clocks
15 篇 capacitors
14 篇 transistors
14 篇 degradation
12 篇 performance eval...
11 篇 simulation
11 篇 mosfets
10 篇 power demand
10 篇 voltage
10 篇 electrodes
9 篇 temperature
9 篇 cmos integrated ...
9 篇 threshold voltag...
9 篇 power dissipatio...
8 篇 circuit simulati...

机构

230 篇 key laboratory o...
26 篇 university of ch...
13 篇 key laboratory o...
12 篇 institute of mic...
9 篇 peking universit...
9 篇 high-frequency h...
9 篇 laboratory of mi...
8 篇 department of el...
8 篇 key laboratory o...
8 篇 key laboratory o...
7 篇 institute of mic...
6 篇 access – ai chip...
6 篇 state key labora...
5 篇 key laboratory o...
5 篇 school of integr...
5 篇 peking universit...
5 篇 school of microe...
5 篇 state key labora...
5 篇 department of el...
5 篇 frontiers scienc...

作者

82 篇 ru huang
61 篇 xing zhang
59 篇 yuan wang
42 篇 song jia
27 篇 ming li
23 篇 wang yuan
21 篇 ganggang zhang
21 篇 jia song
18 篇 runsheng wang
18 篇 zhang xing
17 篇 xia an
17 篇 qianqian huang
17 篇 wengao lu
17 篇 zhongjian chen
16 篇 xiaoyan liu
16 篇 yangyuan wang
16 篇 gang du
15 篇 yacong zhang
15 篇 yandong he
15 篇 jinfeng kang

语言

396 篇 英文
15 篇 中文
9 篇 其他
2 篇 法文

检索条件"机构=Institute of Microelectronnics and Key Laboratory of Microelectronics Devices and Circuits"

共 422 条记录，以下是401-410 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Resistive Switching Behaviors and Mechanism of Transition Metal Oxides-Based Memory devices

Resistive Switching Behaviors and Mechanism of Transition Me...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： J.F.Kang B.Sun B.Gao N.Xu X.Sun L.F.Liu Y.Wang X.Y.Liu R.Q.Han Y.Y.Wang Institute of Microelectronics Peking University & Key Laboratory of Microelectronic Devices and CircuitsMinistry of Education

In this paper,the characteristics and mechanism of the transition metal oxide(TMO) based resistive switching memory(RRAM) devices were addressed. The results show that doping in oxide matrix materials, electrode material,and operating mode of the set/reset process may significantly affect the resistive switching behaviors of RRAM *** the dopants and matrix materials,electrode materials,device structure,and operating modes and understanding the related mechanisms are required to achieve the excellent device performance of TMO-based RRAM for the memory application.A unified physical model,based on the electron hopping transport between oxygen vacancies along the conductive filament paths,is used to explain and describe the resistive switching behaviors of the TMO based RRAM devices.

关键词： LRS HRS Resistive Switching Behaviors and Mechanism of Transition Metal Oxides-Based Memory devices

来源：评论

学校读者我要写书评

暂无评论

Structure and magnetic properties of Co-doped TiO2 nanotubes by aqueous solution method

Structure and magnetic properties of Co-doped TiO2 nanotubes...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： A-bo Zheng Yan Li Yi Wang Lei Sun Li-feng Liu De-dong Han Jin-feng Kang Xing Zhang Ru-qi Han Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855;9781424421862

The Co-doped titanium dioxide nanotubes were synthesized via the aqueous solution reaction. After hydrogenation, room temperature ferromagnetism (RTFM) was found in the cobalt doped titanium dioxide nanotubes at 300 K by the vibrate sample magnetometer. As the concentration of cobalt increased, the observed ferromagnetism became stronger. The X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy were performed and excluded the existence of cobalt cluster. Therefore, the magnetic ions and oxygen vacancies induced by hydrogenation contribute to the observed ferromagnetism at 300 K.

关键词： Magnetic properties Cobalt Titanium Nanotubes Scanning electron microscopy Transmission electron microscopy Temperature Magnetometers X-ray diffraction Dispersion

来源：评论

学校读者我要写书评

暂无评论

Fabrication and characteristics of ZnO-based thin film transistors

Fabrication and characteristics of ZnO-based thin film trans...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Dedong Han Yi Wang Shengdong Zhang Lei Sun Jinfeng Kang Xiaoyan Liu Gang Du Lifeng Liu Ruqi Han Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855

ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties of ZnO-based TFTs were investigated by I D -V D and I D -V G measurements. The ZnO TFT operates in the enhancement mode with a channel mobility of 6.86 cm 2 /V · s. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of flat panel display (FDP).

关键词： Fabrication Thin film transistors Zinc oxide Optical films Substrates Temperature Radio frequency Sputtering X-ray scattering Crystallization

来源：评论

学校读者我要写书评

暂无评论

A dual loop dual VCO CMOS PLL using a novel coarse tuning technique for DTV

A dual loop dual VCO CMOS PLL using a novel coarse tuning te...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Congyin Shi Huaizhou Yang Huiling Xiao Junhua Liu Huailin Liao Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855

A CMOS phase-locked loop (PLL) which synthesizes frequencies between 474 and 858 MHz in steps of 1 MHz and settles in less than 180 ¿s is presented. This PLL can be implemented as a sub-circuit for a frequency synthesizer which serves for UHF Digital-TV receiver. To realize fast loop settling, integer-N architecture that work with 1 MHz reference frequency is implemented and a novel adaptive frequency calibration (AFC) of programmable dichotomizing coarse tuning technology is integrated. The novel AFC structure uses pulses of 2 n times of the PFD¿s reference frequency for counting and comparison. Two multi-band voltage controlled oscillators, which cover 866 to 1468 MHz and 1282 to 1892 MHz separately, are implemented so as to reduce VCO output noise and power consumption by reducing VCO gain on each frequency turning curse. I/Q carriers are generated by VCO output divided by 2. Fabricated in 0.18-¿m CMOS technology, the PLL achieves phase noise of less than -132 dBc/Hz at 1.45 MHz offset.

关键词： Voltage-controlled oscillators Phase locked loops Digital TV Tuning Frequency synthesizers Automatic frequency control CMOS technology Calibration Noise reduction Energy consumption

来源：评论

学校读者我要写书评

暂无评论

Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias

Recovery Characteristics of NBTI of pMOSFETs with Oxynitride...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Jiaqi Yang Junyan Pan Lihua Huang Xiaoyan Liu Ruqi Han and Jinfeng Kang L.F.Zhang Z.W.Zhu C.C.Liao H.M.Wu Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Semiconductor Manufacturing International Corporation

In this paper,the recovery characteristics of negative bias temperature instability（NBTI） of pMOSFETs under drain bias were *** is observed that,the drain bias not only worsens the NBTI degradation in high |V| region but also suppresses the recovery ratio of *** time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial ls. While in long time scale,the recovery obeys power law dependence on time.A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias.

关键词： Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias

来源：评论

学校读者我要写书评

暂无评论

An Acquisition Circuit in Global Positioning System Receivers

An Acquisition Circuit in Global Positioning System Receiver...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Xiaoxin Cui Chungan Peng Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Institute of Beijing Remote Sensing Information

The conventional matched filter structures are investigated in this paper,An acquisition circuit based on the polyphase form matched filter in Global Positioning System(GPS) receiver is *** the cost of less hardware resource,the significant advantage in the speed of synchronization is *** 32×128 polyphase form matched filter,the critical path delay approximately reduces 1/2,the sample frequency would be double.

关键词： An Acquisition Circuit in Global Positioning System Receivers

来源：评论

学校读者我要写书评

暂无评论

A Low-Voltage Voltage Doubler without Body Effect

A Low-Voltage Voltage Doubler without Body Effect

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Ming Li Li-Wu Yang Jinfeng Kang Yangyuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Semiconductor Manufacturing International Corporation

＜正＞A voltage doubler,which avoids body effect and then improves rise time and efficiency even with 1V power supply,is *** art is designed for word line boosting,using 0.18um EEPROM *** only the voltage doubler can work with capacitive load normally,but also it can supply load current and achieve higher *** whole circuit can be implemented on chip and is suitable for low voltage *** addition,theoretical analysis and simulation results have been given.

关键词： [IEEE keyword]EPROM Equations Mathematical model MOSFETs Threshold voltage Transistors Power supplies

来源：评论

学校读者我要写书评

暂无评论

Resistive switching behaviors and mechanism of transition metal oxides-based memory devices

Resistive switching behaviors and mechanism of transition me...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： J. F. Kang B. Sun B. Gao N. Xu X. Sun L. F. Liu Y. Wang X. Y. Liu R. Q. Han Y.Y. Wang Institute of Microelectronics Ministry of Education Peking University and Key Laboratory of Microelectronic Devices and Circuits Beijing China

ISBN: (纸本)9781424421855

In this paper, the characteristics and mechanism of the transition metal oxide (TMO) based resistive switching memory (RRAM) devices were addressed. The results show that doping in oxide matrix materials, electrode material, and operating mode of the set/reset process may significantly affect the resistive switching behaviors of RRAM devices. Optimizing the dopants and matrix materials, electrode materials, device structure, and operating modes and understanding the related mechanisms are required to achieve the excellent device performance of TMO-based RRAM for the memory application. A unified physical model, based on the electron hopping transport between oxygen vacancies along the conductive filament paths, is used to explain and describe the resistive switching behaviors of the TMO based RRAM devices.

关键词： Voltage Zinc oxide Electrodes Sun microelectronics Doping Conducting materials Tin Temperature Laboratories

来源：评论

学校读者我要写书评

暂无评论

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

3-D Simulation of Geometrical Variations Impact on Nanoscale...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Shimeng Yu Yuning Zhao Yuncheng Song Gang Du Jinfeng Kang Ruqi Han Xiaoyan Liu Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Shenzhen Graduate School Peking University

Intra-die fluctuations in the nanoscale CMOS technology emerge inherently to geometrical variations such as line edge roughness(LER) and oxide thickness fluctuations (OTF).A full 3-D statistical simulation is presented to investigate the impact of geometrical variations on the FinFETs *** this work,roughness is introduced by a Fourier analysis of the power spectrum of Gaussian autocorrelation *** influence of different geometrical variation sources is compared and *** results shows that FinFETs performance is most sensitive to the fin LER,which causes a remarkable shift and fluctuations in threshold voltage, drain induced barrier lower effect(DIBL) and leakage current. The impact of gate LER follows that of fin *** simulation also suggests quantum confinement effect accounts for the aggressive fluctuations due to fin LER.

关键词： D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

来源：评论

学校读者我要写书评

暂无评论

Simulation of Charge Trapping Memory with Novel Structures

Simulation of Charge Trapping Memory with Novel Structures

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： X.Y.Liu Y.C.Song Gang Du R.Q Han Z.L.Xia D.Kim K-H Lee Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Samsung Electronics Co.Ltd

＜正＞Ⅰ.Introduction Flash memories are one of the basic building blocks of today’s electronic *** floating gate type of Flash memory is impossible to scale down to beyond 45nm due to the difficulty in scaling the tunnel oxide and the gate coupling ratio[1].Because of the difficulty in maintaining high gate coupling ratio and preventing cross talk between neighboring cells,NAND technology is forecasted to migrate gradually from floating gate devices（FG） to charge trapping memory（CTM）[2]. CTM are not sensitive to tunnel oxide damage since the charge is stored in discrete traps and one weak spot does

关键词：

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共43页 << < 34 35 36 37 38 39 40 41 42 43 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：