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检索条件"机构=Institute of Microelectronnics and Key Laboratory of Microelectronics Devices and Circuits"

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A New Method to Evaluate the Total Dose Radiation Effect of MOS devices

A New Method to Evaluate the Total Dose Radiation Effect of ...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Hao Tang Yi Wang Jinyan Wang Yijun Zheng Yufeng Jin Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Peking University Shenzhen Graduate School

The total dose radiation effect（TDRE） has been regarded as one of the most harmful factors to degrade MOS *** this paper,a simple new method called avalanche injection of holes is introduced to simulate or displace the radiation experiments to determine the TDRE of MOS *** TDRE, avalanche injection of holes can also provide sufficient holes to flow into the gate oxide layer where a small part of these holes can be trapped in the defects and cause a shift of flat-band voltage(ΔV) of MOS device,we can conclude that the structure which has a greaterΔV would be easier to be affected by TDRE.

关键词： LPCVD A New Method to Evaluate the Total Dose Radiation Effect of MOS devices

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Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

Impact of stochastic mismatch on FinFETs SRAM cell induced b...

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Shimeng Yu Yuning Zhao Gang Du Jinfeng Kang Ruqi Han Xiaoyan Liu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China Shenzhen Graduate School Peking University

3-D mixed-mode device-circuit simulation is presented to investigate stochastic mismatch of FinFETs SRAM cell induced by process variation including fin-thickness and gate length variation as well as fin line edge roughness (LER). In this work, 20 nm FinFETs SRAMpsilas sensitivity of read and write static noise margin (SNM) to process variation is evaluated. The worst cases of read and write SNM under the influence of process variation are summarized. The results show that FinFETs SRAMpsilas stability is most sensitive to the access transistorpsilas fin-thickness variation. Under the worst cases, increasing the pull-down transistorpsilas fin-number may improve read SNM. The fin LER can cause aggressive fluctuations of the butterfly-curves and impose a big challenge on robust FinFETs SRAM design. Adopting 8T cell instead of 6T cell can alleviate the fin LER effect on read stability.

关键词： Stochastic processes FinFETs Random access memory MOSFETs Stability Fluctuations CMOS technology Stochastic resonance MOS devices Robustness

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New method to evaluate the total dose radiation effect of MOS devices

New method to evaluate the total dose radiation effect of MO...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Hao Tang Yi Wang Jinyan Wang Yijun Zheng Yufeng Jin Peking University Beijing Beijing CN Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855

The total dose radiation effect (TDRE) has been regarded as one of the most harmful factors to degrade MOS devices. In this paper, a simple new method called avalanche injection of holes is introduced to simulate or displace the radiation experiments to determine the TDRE of MOS devices. Like TDRE, avalanche injection of holes can also provide sufficient holes to flow into the gate oxide layer where a small part of these holes can be trapped in the defects and cause a shift of flat-band voltage (¿V FB ) of MOS device, we can conclude that the structure which has a greater ¿V FB would be easier to be affected by TDRE.

关键词： Radiation effects MOS devices Voltage microelectronics Electron traps Electrodes Frequency Laboratories circuits Degradation

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Theoretical study of low-energy electron penetration in resist-substrate target by Monte Carlo simulation

Theoretical study of low-energy electron penetration in resi...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Liming Ren Baoqin Chen Ru Huang Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China Chinese Academy and Sciences Beijing China

ISBN: (纸本)9781424421855

Low-energy electron beam lithography has a variety of advantages. The traditional electron scattering model consisting of Rutherford elastic scattering cross section and Bethe continuous slowing down approximation formula are not suitable for low-energy electron beam lithography. A more accurate physical model describing the low-energy electron scattering processes was proposed in this work. And Monte Carlo method was used to simulate the complex scattering processes of Gaussian-distribution low-energy electron beam in the target of thin film on thick substrate. The simulation results show that low-energy electron beam lithography has advantages of high throughput, low proximity effects and small damage to the underlying substrate. It is in agreement with the conclusion got from Lee et al¿s and Peterson et al¿s experiments.

关键词： Particle scattering Electron beams Lithography Substrates microelectronics Gaussian processes Throughput Proximity effect Energy resolution Polynomials

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A low-voltage voltage doubler without body effect

A low-voltage voltage doubler without body effect

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International Conference on Solid-State and Integrated Circuit Technology

作者： Ming Li Li-Wu Yang Jinfeng Kang Yangyuan Wang Semiconductor Manufacturing International Corporation Shanghai China Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China

ISBN: (纸本)9781424421855

A voltage doubler, which avoids body effect and then improves rise time and efficiency even with 1 V power supply, is presented. This art is designed for word line boosting, using 0.18 um EEPROM technology. Not only the voltage doubler can work with capacitive load normally, but also it can supply load current and achieve higher efficiency. The whole circuit can be implemented on chip and is suitable for low voltage application. In addition, theoretical analysis and simulation results have been given.

关键词： Power supplies MOSFETs Threshold voltage Boosting EPROM Low voltage Charge pumps microelectronics Circuit simulation Switches

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Simulation of charge trapping memory with novel structures

Simulation of charge trapping memory with novel structures

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International Conference on Solid-State and Integrated Circuit Technology

作者： X. Y. Liu Y. C. Song Gang Du R.Q. Han Z. L. Xia D. Kim K.-H. Lee Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China Samsung Electronics Company Limited South Korea

The floating gate type of flash memory is impossible to scale down to beyond 45 nm due to the difficulty in scaling the tunnel oxide and the gate coupling ratio. Because of the difficulty in maintaining high gate coupling ratio and preventing cross talk between neighboring cells, NAND technology is forecasted to migrate gradually from floating gate devices (FG) to charge trapping memory (CTM). CTM are not sensitive to tunnel oxide damage since the charge is stored in discrete traps and one weak spot does not cause all stored charge to leak out as in floating gate devices. The NAND HC-TANOS flash cell has been generated in three dimensional TCAD tools with 38 nm gate length, 34 nm channel width and charge trapping structures. A structure of Al 2 O 3 (15 nm)/Si 3 Na (6.5 nm)/SiO 2 (4.5 nm) with TaN gate was employed as the gate stack. To study the effects of gate stack coverage on flash cell's performance, the shape of gate stack is varied while keeping all other structural parameters fixed.

关键词： Tunneling Shape Circuit simulation Electron traps Nonvolatile memory microelectronics Flash memory Poisson equations Failure analysis Laboratories

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Recovery characteristics of NBTI of pMOSFETs with oxynitride dielectrics under drain bias

Recovery characteristics of NBTI of pMOSFETs with oxynitride...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Jiaqi Yang Junyan Pan Lihua Huang Xiaoyan Liu Ruqi Han Jinfeng Kang L. F. Zhang Z. W. Zhu C. C. Liao H. M. Wu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China Semiconductor Manufacturing International Corporation Shanghai China

ISBN: (纸本)9781424421855

In this paper, the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that, the drain bias not only worsens the NBTI degradation in high |V ds | region but also suppresses the recovery ratio of NBTI. The time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial 1s. While in long time scale, the recovery obeys power law dependence on time. A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias.

关键词： Niobium compounds Titanium compounds MOSFETs Degradation Stress measurement Phase measurement Dielectric measurements microelectronics circuits Negative bias temperature instability

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The parasitic effects induced by the contact in RRAM with MIM structure

The parasitic effects induced by the contact in RRAM with MI...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Lijie Zhang Ru Huang Albert Z. H. Wang Dake Wu Runsheng Wang Yongbian Kuang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China Department of Electrical Engineering University of California Riverside CA USA

ISBN: (纸本)9781424421855;9781424421862

This paper has reported a programmable switch composed of copper-doped-SiO 2 sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with top electrode (TE), while with regard to the cell without TE, no rectifying-like I-V characterization was observed. This rectifying-like I-V curve is properly caused by electrode contact. To further prove the effect of TE, R ON retention behavior of the device with TE and without TE were investigated. The testing results clearly showed that the R ON retention property of device with TE was worse than that without TE. We propose a model for the interface between top electrode and copper-doped-SiO 2 to interpret this rectifying-like performance, which indicates that interface rectifying-like effect emerges when on-resistance is comparable with the resistance of diode-like junction between metal contact and resistive-material. The results suggest that optimizing interface condition or adjusting resistive material with large on-resistance is essential for robust MIM RRAM design.

关键词： Copper Electrodes Tellurium Voltage Annealing Contacts Switches Random access memory Tungsten Silicon

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Enhanced device performance of AlGaN/GaN HEMTs using thermal oxidation of electron-beam deposited Aluminum for gate oxide

Enhanced device performance of AlGaN/GaN HEMTs using thermal...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Hongwei Chen Jinyan Wang Chuan Xu Min Yu Yang Fu Zhihua Dong Fujun Xu Yilong Hao Cheng P.Wen Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Research Center for Wide Gap Semiconductor School of PhysicsPeking University

We report on an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor（MOS-HEMT） using thermal oxidation of electron-beam deposited aluminum as the gate dielectric. This novel dielectric deposition process is simple,and less expensive than electron cyclotron resonance（ECR） plasma oxidation of Al or atomic layer deposited（ALD） *** X-ray Photoelectron Spectroscopy（XPS） Ols spectrum showed that the AlO with a bandgap of 7.8 eV was obtained in this *** resulted MOS-HEMT exhibits several orders of magnitude lower gate leakage,larger drain saturation current and larger gate voltage swing compared to a conventional AlGaN/GaN high-electron-mobility transistor（HEMT） of similar *** MOS-HEMT is therefore a viable alternative to regular HEMTs for high-power, high-frequency and high-temperature applications.

关键词： AlGaN/GaN MOS-HEMTs leakage current thermal oxidation electron-beam evaporation

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The Parasitic Effects Induced by the Contact in RRAM with MIM Structure

The Parasitic Effects Induced by the Contact in RRAM with MI...

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Lijie Zhang Ru Huang Albert Z.H.Wang Dake Wu Runsheng Wang Yongbian Kuang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Dept.of Electrical Engineering University of CaliforniaRiversideCA 92521USA

This paper has reported a programmable switch composed of copper-doped-SiO sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with top electrode（TE）,while with regard to the cell without TE,no rectifying-like I-V characterization was *** rectifying-like I-V curve is properly caused by electrode *** further prove the effect of TE,R retention behavior of the device with TE and without TE were *** testing results clearly showed that the R retention property of device with TE was worse than that without *** propose a model for the interface between top electrode and copper-doped-SiO to interpret this rectifying-like performance,which indicates that interface rectifying-like effect emerges when on-resistance is comparable with the resistance of diode-like junction between metal contact and *** results suggest that optimizing interface condition or adjusting resistive material with large on-resistance is essential for robust MTM RRAM design.

关键词： The Parasitic Effects Induced by the Contact in RRAM with MIM Structure MIM

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