This paper has reported a programmable switch composed of copper-doped-SiO sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with to...
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This paper has reported a programmable switch composed of copper-doped-SiO sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with top electrode（TE）,while with regard to the cell without TE,no rectifying-like I-V characterization was *** rectifying-like I-V curve is properly caused by electrode *** further prove the effect of TE,R retention behavior of the device with TE and without TE were *** testing results clearly showed that the R retention property of device with TE was worse than that without *** propose a model for the interface between top electrode and copper-doped-SiO to interpret this rectifying-like performance,which indicates that interface rectifying-like effect emerges when on-resistance is comparable with the resistance of diode-like junction between metal contact and *** results suggest that optimizing interface condition or adjusting resistive material with large on-resistance is essential for robust MTM RRAM design.
We report on an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) using thermal oxidation of electron-beam deposited aluminum as the gate dielectric. This novel dielectric deposition pro...
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ISBN:
(纸本)9781424421855
We report on an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) using thermal oxidation of electron-beam deposited aluminum as the gate dielectric. This novel dielectric deposition process is simple, and less expensive than electron cyclotron resonance (ECR) plasma oxidation of Al or atomic layer deposited (ALD) Al 2 O 3 . The X-ray Photoelectron Spectroscopy (XPS) Ols spectrum showed that the Al 2 O 3 with a bandgap of 7.8 eV was obtained in this specimen. The resulted MOS-HEMT exhibits several orders of magnitude lower gate leakage, larger drain saturation current and larger gate voltage swing compared to a conventional AlGaN/GaN high-electron-mobility transistor (HEMT) of similar design. The MOS-HEMT is therefore a viable alternative to regular HEMTs for high-power, high-frequency and high-temperature applications.
This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model,...
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This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model, the rupture of conductive filaments is caused by recombination of oxygen ions and electron-low-occupied oxygen vacancies. The transport equations of interstitial oxygen ions in the oxide matrix are introduced to quantitatively investigate the reset speed and other properties such as uniformity, endurance, and reset current. The proposed mechanism was verified by experiments.
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