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SSRN 2023年

作者： Wu, Wanming Geng, Di Chen, Chuanke Chuai, Xichen Li, Shuai Lu, Nianduan Li, Ling State key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

We design and fabricate a high-speed, low-voltage, small-pitch and robust integrated gate driver with organic thin-film transistors (OTFTs). The dual-gate OTFT devices have a field effect mobility of 0.78cm2/Vs, and on/off current ratio of above 108. A single stage of the gate driver consists of ten TFTs and two capacitors, with small pitch of 244μm. The fabricated circuit can output minimum pulse width of 5μs, which is compatible to full-high definition (FHD, 1,920×1,080) active-matrix displays with 60Hz frame rate. It can work at input swing of as low as 10V, with VGH2, VGH1 and VGL of 5V, 0V and -10V respectively. With the threshold voltage shift under positive and negative bias stress, the driver shows output signals without significant degradation and demonstrates its high reliability through simulation. © 2023, The Authors. All rights reserved.

关键词： Thin film transistors

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Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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A Spike-Event-Based Neuromorphic Processor with Enhanced On-Chip STDP Learning in 28nm CMOS

A Spike-Event-Based Neuromorphic Processor with Enhanced On-...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Yi Zhong Xiaoxin Cui Yisong Kuang Kefei Liu Yuan Wang Ru Huang Key Laboratory of Microelectronics Devices and Circuits Institute of Microelectronics Peking University Beijing China

Event-based spiking neural network (SNN) has displayed a promising prospect to realize real-time, efficient and intelligent hardware platforms. Whereas great efforts are still being appealed to explore the possibility of introducing online learning abilities to neuromorphic systems. In this paper, a 28-nm CMOS neuromorphic processor is presented, fulfilling online learning by adopting counter and lookup table (LUT) based spike-timing-dependent plasticity (STDP) rule. Designed to work at high-precision scenarios, the presented processor integrates up to 1024 neurons and 256K signed 9-bit synapses. It also ensures chip array interconnection to fit large neural networks. Moreover, by utilizing the sparse property of spike events to minimize activity rate, the typical power consumption is further reduced to 3.348mW for training MNIST dataset.

关键词： Training Power demand Neuromorphics Table lookup System-on-chip Biological neural networks Synapses

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Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection

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Science China(Information Sciences) 2019年第6期62卷 79-86页

作者： Lizhong ZHANG Yuan WANG Yize WANG Xing ZHANG YANDong HE Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of MicroelectronicsPeking University

A conventional diode-triggered silicon-controlled rectifier(DTSCR) structure with a layout strategy for electrostatic discharge(ESD) protection is presented and confirmed in a 65-nm CMOS *** modified device is featured by a scaled-down trigger-diode string, which shortens its turn-on time using a variable scaling factor. To confirm the parasitic resistance adjustments of the modified DTSCR, transmission line pulsing(TLP)/very fast transmission line pulsing(VF-TLP) tests and simulations are performed on the device. Compared to a conventional DTSCR, this structure exhibits an improved turn-on speed and robustness, which are suitable for I/O protection of ESD events in the nanosecond range, particularly the charged-device model(CDM) event.

关键词： diode triggered silicon controlled rectifier(DTSCR) electrostatic discharge(ESD) transmission line pulsing(TLP) very fast transmission line pulsing(VF-TLP) turn-on behavior

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Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields

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Science China(Information Sciences) 2019年第10期62卷 164-170页

作者： Xiaokang LI Baotong ZHANG Bowen WANG Xiaoyan XU Yuancheng YANG Shuang SUN Qifeng CAI Shijie HU Xia AN Ming LI Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University

In this paper, the HfOx-based resistive random access memory（RRAM） devices with sub-100 nm pyramid-type electrodes were fabricated. With the help of tip-enhanced electric field around the pyramid-type electrodes, it was experimentally demonstrated that the novel devices have better cycle-to-cycle variation control, lower forming/set voltage（1.97/0.7V） and faster switching speed（≤30 ns under 0.9V pulse） as well as better endurance reliability than conventional flat electrode resistive memory devices. In addition,the novel RRAM is experimentally demonstrated with independence of electrode number for the first time to present great potential in scaling down. This novel structure metal-oxide based RRAM will be suitable for the future low-power non-volatile memory application.

关键词： RRAM pyramid-type electrode variation reliability switching speed conducting filament

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Memory materials and devices:From concept to application

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InfoMat 2020年第2期2卷 261-290页

作者： Zhenhan Zhang Zongwei Wang Tuo Shi Chong Bi Feng Rao Yimao Cai Qi Liu Huaqiang Wu Peng Zhou State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghaiChina Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijingChina Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijingChina College of Materials Science and Engineering Shenzhen UniversityShenzhenChina Institute of Microelectronics Tsinghua UniversityBeijingChina

Memory cells have always been an important element of information *** emerging technologies like big data and cloud computing,the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory *** is well known,better data storage is mostly achieved by ***,as the size of the memory device is reduced,a series of problems,such as drain gate-induced leakage,greatly hinder the performance of memory *** meet the increasing demands of information technology,novel and high-performance memory is urgently ***,emerging memory technologies are expected to improve memory performance and drive the information *** review will focus on the progress of several emerging memory technologies,including two-dimensional material-based memories,resistance random access memory(RRAM),magnetic random access memory(MRAM),and phasechange random access memory(PCRAM).Advantages,mechanisms,and applications of these diverse memory technologies will be discussed in this review.

关键词： memory MRAM PCRAM RRAM two-dimensional material

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A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Science China(Information Sciences) 2020年第6期63卷 253-255页

作者： Gong CHEN Bocheng YU Xiaokang LI Xiaoqiao DONG Xiaoyan XU Zhihong LI Ru HUANG Ming LI Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University Faculty of Information Technology Beijing University of Technology

Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoactive molecules on the semiconductor surface was necessarily adopted to employ their photoelectric characteristics which can be observed in the solution. Porphyrin-based hybrid transistors have emerged as promising candidates for photonic sensing application due to the

关键词： A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Deep insight into the voltage amplification effect from ferroelectric negative capacitance

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Science China(Information Sciences) 2019年第8期62卷 216-218页

作者： Huimin WANG Qianqian HUANG Mengxuan YANG Xing ZHANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics

Dear editor,Power dissipation has become one of the most serious problems for nano-electronics. For conventional transistors, the operation voltage cannot be continuously reduced due to the fundamental limitation of subthreshold swing (SS)(60 mV/decade at room temperature)[1, 2]. The voltage amplification (VA) induced by the negative capacitance

关键词： Deep insight into the voltage amplification effect from ferroelectric negative capacitance

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Rectangular suspended single crystal Si nanowire with (001) planes and direction developed via TMAH wet chemical etching

Rectangular suspended single crystal Si nanowire with (001) ...

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2020 China Semiconductor Technology International Conference, CSTIC 2020

作者： Sun, Shuang Zhang, Baotong Yang, Yuancheng An, Xia Xu, Xiaoyan Huang, Ru Li, Ming Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing100871 China

ISBN: (纸本)9781728165585

In this study, a kind of rectangular suspended single crystal Si nanowire with (001) planes and along direction is developed via a CMOS-compatible top-down scheme. In this scheme, the nanowires are formed by anisotropic etching of TMAH on different silicon crystallography orientations. By designing the initial orientations of hard mask patterns, the rectangular suspended silicon nanowires can be successfully fabricated without any sacrificial epitaxial layers. Due to the damage-free process and the high mobility on (001) planes, this scheme will provide a high-quality channel for the future gate-alI-around silicon transistor technology. © 2020 IEEE.

关键词： Nanowires

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Polar Axis Orientation Control of Hafnium-Based Ferroelectric Capacitors with in-Situ AC Electric Bias During Rapid Thermal Annealing

Polar Axis Orientation Control of Hafnium-Based Ferroelectri...

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Symposium on VLSI Technology

作者： Zhaomeng Gao Tianjiao Xin D. Kai Qiwendong Zhao Yiwei Wang Cheng Liu X. Yilin Rui Wang Guangjie Shi Yunzhe Zheng Yonghui Zheng Yan Cheng Hangbing Lyu Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Shanghai China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (CAS) Shanghai China Huawei Technologies Co. Shenzhen China Hualu Technologies Co. Shanghai China Institute of Microelectronics (CAS) Beijing China

ISBN: (数字)9798350361469

ISBN: (纸本)9798350361476

Hafnium-based ferroelectric (FE) thin films, prepared via atomic layer deposition (ALD), suffered from random oriented polar axis (PA), posing challenges and complexities for device scaling and variation. To effectively control the PA orientation and enhance polarization, we employed in-situ AC electric bias (E) during rapid thermal annealing (RTA) treatment (i.e. RTA+E). The main findings are: (1) Direct experimental evidence of variable orthogonal (0-) PA has been obtained for the first time, originating from tetragonal (T-) to O- transition in RTA cooling; (2) Applying E during cooling significantly enhances polarization in hafnium-based FE capacitors up to ~121.6% increase; (3) The RTA+E method effectively controls the O-PA orientation towards the out-of-plane E direction. These findings solidly demonstrate that the PA orientation of O-grain can be controlled in fluorite-type FE thin films.

关键词： Annealing Cooling Films Capacitors Position control Transforms Very large scale integration

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