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2021 IEEE International Conference on Integrated circuits, Technologies and Applications, ICTA 2021

作者： Meng, Ying Gao, Runhua Wang, Xinhua Chen, Xiaojuan Huang, Sen Wei, Ke Wang, Dahai Mu, Fengwen Liu, Xinyu Chinese Academy of Sciences High-Frequency High-Voltage Device and Integrated Circuits RD Center Institute of Microelectronics Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781665417471

Recent flexible printed circuit applications of high-frequency wireless communication systems require thicker metal layers on substrates for lower ohmic losses. In this paper, a Cu layer over 50-micron thick was directly generated on the polyimide substrate by heterogeneous bonding method without interlayer. The polyimide was first sputtered a 200 nm-thick Cu layer, and then was activated by oxygen plasma to improve its hydrophilicity and achieve direct adhesion between polyimide and nanoscale Cu deposition, and eventually was bonded with a 50micron-thick Cu foil in a Pt-catalyzed formic acid atmosphere by thermo-compression. The effectiveness of this method was verified by comparing bonding interfaces, shear strength, and fracture modes of bonded samples with and without a Cr interlayer. This method provides a new idea for the integration of heterogeneous materials needed in wearable products and flexible printed circuits. © 2021 IEEE.

关键词： Formic acid

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A low-Power SRAM with charge cycling based read and write assist scheme 15

A low-Power SRAM with charge cycling based read and write as...

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15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020

作者： Zhang, Hanzun Jia, Song Yang, Jiancheng Wang, Yuan Institute of Microelectronics Peking University Beijing100871 China Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China

ISBN: (纸本)9781728162355

In a SRAM array, the largest power consumer is pre-charging or voltage switching on bit-lines in read or write operations. The paper presents a bit-line charge cycling based read and write assist circuit for static random-access memory. With help of the assist circuit, the BLs charges wasted in conventional design is reused for BLs pre-charging in next period. The proposed array is simulated in SMIC 14nm FinFET process with a supply voltage of 0.8V. Simulation results show that a 23%-43% power reduction is achieved compared with conventional designs. © 2020 IEEE.

关键词： Static random access storage

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Efficient second-harmonic emission via strong modal overlap in single-resonant lithium niobate nanocavity

arXiv

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arXiv 2025年

作者： Jiang, Zhi Yao, Danyang Gao, Yu Ran, Xu Li, Duomao Zhang, Erqi Wang, Jianguo Gan, Xuetao Zhang, Jinchuan Liu, Fengqi Hao, Yue State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Faculty of Integrated Circuits Xidian University Xi’an710071 China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi’an710129 China Laboratory of Solid-State Optoelectronics Information Technology Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

High-efficiency second-harmonic generation (SHG) in compact integrated photonic systems is crucial for advancing nonlinear optical technologies. However, achieving exceptional conversion efficiencies while maintaining stable performance remains a significant challenge. Here, we report a high-Q single-resonant photonic crystal nanobeam cavity (PCNBC) on a polymer-loaded lithium niobate on insulator (LNOI) platform, which enables bright second-harmonic (SH) emission. Through synergistic optimization of modal confinement and spatial overlap in a y-cut LN architecture, our device achieves a normalized SHG conversion efficiency of 163%/W, outperforming previous LN-based photonic crystal cavities LN-based photonic crystal cavities by over three orders of magnitude. The visible SH emission at 768.77 nm exhibits a single-lobe radiation pattern with precise spectral alignment between fundamental (FH) and second-harmonic (SH) modes, a critical feature for integrated photonic circuits. Remarkably, the conversion efficiency remains stable under thermal variations up to 20°C, addressing a key limitation of multi-resonant systems. High-order cavity modes are directly visualized via CCD imaging, confirming strong spatial overlap. This work establishes a record SHG conversion efficiency for LN microcavities and provides a scalable, temperature-insensitive architecture for nonlinear light sources, with immediate applications in quantum optics and chip-scale interconnects. © 2025, CC BY.

关键词： Quantum optics

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Cavity-enhanced acousto-optic modulators on polymer-loaded lithium niobate integrated platform

arXiv

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arXiv 2024年

作者： Jiang, Zhi Yao, Danyang Ran, Xu Gao, Yu Wang, Jianguo Gan, Xuetao Liu, Yan Hao, Yue Han, Genquan State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Faculty of integrated circuits Xidian University Xi'An710071 China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi'An710129 China Hangzhou Institute of Technology Xidian University Hangzhou311200 China

On chip acousto-optic (AO) modulation represents a significant advancement in the development of highly integrated information processing systems. However, conventional photonic devices face substantial challenges in achieving efficient conversion due to the limited overlap between acoustic waves and optical waves. In this study, we address this limitation by demonstrating an enhanced conversion effect of photonic crystal nanobeam cavities (PCNBCs) in AO modulation on a polymer-loaded lithium niobate integrated platform. Attributed to the high ratio of quality factor (Q) to mode volume (V) and optimal light-sound overlap within the nanocavity, PCNBCs-based AO modulator exhibits a significantly enhanced extinction ratio of 38 dB with a threshold RF power below -50 dBm, which is two orders of magnitude lower than that based on micro-ring resonator (MRRs). In addition, robust digital amplitude shift keying modulations using selected RF and optical channels of the PCNBCs-enhanced AO modulators. These findings validate the compelling properties of the PCNBCs photonic platform, establishing it as a promising candidate for on-chip integrated microwave photonics, optical transceivers, and computing applications. © 2024, CC BY.

关键词： Amplitude shift keying

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High-sensitivity graphene MEMS force and acceleration sensor based on graphene-induced non-radiative transition

arXiv

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arXiv 2023年

作者： Li, Guanghui Liu, Fengman Yang, Shengyi Liu, Jiang-Tao Li, Weimin Wu, Zhenhua School of Physics and Mechatronic Engineering Guizhou Minzu University Guiyang550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of CAS Beijing100049 China

The micro-electromechanical-system (MEMS) force and acceleration sensor utilizing the graphene-induced non-radiative transition was investigated. The graphene-induced non-radiative transition is very sensitive to the distance, and the deflection of the graphene ribbon is highly susceptive to applied force or acceleration. Thus, a high-sensitivity MEMS sensor can be achieved with detecting the graphene ribbon’s deflection of 1 nm, the force of 0.1 pN, and the acceleration of 0.1 mg. The MEMS sensor, with a size of only tens of microns, can be charged by light irradiation without connecting power sources. In addition, it allows long-distance detection, i.e., wireless transmitter circuit can be omitted. Therefore, it will have significant application prospects in the fields of micro-smart devices, wearable devices, biomedical systems, and so on. Copyright © 2023, The Authors. All rights reserved.

关键词： Graphene

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Applications of MXenes in human-like sensors and actuators

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Nano Research 2023年第4期16卷 5767-5795页

作者： Jinbo Pang Songang Peng Chongyang Hou Xiao Wang Ting Wang Yu Cao Weijia Zhou Ding Sun Kai Wang Mark H.Rümmeli Gianaurelio Cuniberti Hong Liu Institute for Advanced Interdisciplinary Research(iAIR) Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of ShandongUniversity of JinanJinan 250022China Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics Dresden Technische Universität DresdenDresden 01069Germany Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Shenzhen Key Laboratory of Nanobiomechanics Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China State Key Laboratory of Biobased Material and Green Papermaking Qilu University of TechnologyShandong Academy of SciencesJinan 250353China School of Bioengineering Qilu University of TechnologyShandong Academy of ScienceJinan 250353China Key Laboratory of Modern Power System Simulation and Control&Renewable Energy Technology(Ministry of Education) Northeast Electric Power UniversityJilin 132012China School of Electrical Engineering Northeast Electric Power UniversityJilin 132012China School of Electrical Engineering Weihai Innovation Research InstituteQingdao UniversityQingdao 266000China School of Electrical and Computer Engineering Jilin Jianzhu UniversityChangchun 130118China Institute for Complex Materials Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key L

Human beings perceive the world through the senses of sight,hearing,smell,taste,touch,space,and *** first five senses are prerequisites for people to *** sensing organs upload information to the nervous systems,including the brain,for interpreting the surrounding ***,the brain sends commands to muscles reflexively to react to stimuli,including light,gas,chemicals,sound,and ***,as an emerging two-dimensional material,has been intensively adopted in the applications of various sensors and *** this review,we update the sensors to mimic five primary senses and actuators for stimulating muscles,which employ MXene-based film,membrane,and composite with other functional ***,a brief introduction is delivered for the structure,properties,and synthesis methods of ***,we feed the readers the recent reports on the MXene-derived image sensors as artificial retinas,gas sensors,chemical biosensors,acoustic devices,and tactile sensors for electronic ***,the actuators of MXene-based composite are ***,future opportunities are given to MXene research based on the requirements of artificial intelligence and humanoid robot,which may induce prospects in accompanying healthcare and biomedical engineering applications.

关键词： MXenes sensors actuators gas sensors biosensors tactile sensors sound sensors artificial retina

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A Low-Jitter and Low-Reference-Spur 320 GHz Signal Source With an 80 GHz Integer-N Phase-Locked Loop Using a Quadrature XOR Technique

A Low-Jitter and Low-Reference-Spur 320 GHz Signal Source Wi...

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作者： Liang, Yuan Boon, Chirn Chye Qi, Gengzhen Dziallas, Giannino Kissinger, Dietmar Ng, Herman Jalli Mak, Pui-In Wang, Yong Nanyang Technological University School of Electrical and Electronic Engineering Singapore639798 Singapore Sun Yat-sen University School of Microelectronics Science and Technology Zhuhai519082 China State-Key Laboratory of Analog and Mixed-Signal VLSI Institute of Microelectronics University of Macau China Leibniz Institute for High Performance Microelectronics Frankfurt an der Oder 15236 Germany Institute of Electronic Devices and Circuits Ulm University Ulm89081 Germany Karlsruhe University of Applied Sciences Faculty of Electrical Engineering and Information Technology Karlsruhe76133 Germany University of Electronic Science and Technology of China School of Information and Communication Engineering Chengdu611731 China Nanhu Laboratory Jiaxing314002 China

This article reports a 320-GHz low-jitter and low-reference-spur signal source consisting of an 80-GHz integer- N phase-locked loop (PLL) and a 320-GHz frequency quadrupler. The 80-GHz PLL features a novel dual-path quadrature exclusive-OR (QXOR) technique to cancel the spurs at the reference frequency and its harmonics, enabling low-spur and low-noise phase locking. The proposed phase detector (PD) also enables frequency detection and lock detection (LD), rendering the band-searching to be decoupled from the loop components. Implemented in a 0.13- \mu \text{m} SiGe BiCMOS technology, the proposed signal source shows a -73.1-dBc reference spur, -113.7-dB/Hz phase noise at 1-MHz offset at 40.96 GHz, and -90.3-dB/Hz phase noise at 1-MHz offset at 311.8 GHz. It achieves an integrated jitter of 66.9 fsrms at 40.96 GHz and 122 fsrms (both integrated from 10 kHz to 100 MHz) beyond 300 GHz, with a total division ratio of 512. The LD time is at the microsecond level. The maximum output power is -3.24 dBm, and the power consumption is 372 mW. © 1963-2012 IEEE.

关键词： Phase locked loops

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Development of HSQ replacement gate process for silicon nanowire MOS devices

Development of HSQ replacement gate process for silicon nano...

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IEEE Electron devices Technology and Manufacturing Conference (EDTM)

作者： Kun Tu Xiaoqiao Dong Baotong Zhang Ru Huang Ming Li Peimin Lu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China Fuzhou University Fuzhou China

In this paper, we have developed a replacement gate process with HSQ based on electron beam transmission exposure, which can simply and efficiently realize ideally symmetrical gate-all-around structure. HSQ replacement gate with intact morphology is successfully prepared on suspended nanowire arrays. With Si₃N₄ as the filling dielectric material, HSQ replacement gate is flattened by CMP and removed by hydrofluoric acid. Finally, the self-aligned and completely controllable poly-Si gate-all-around structure is realized successfully.

关键词： Electron beams Dielectric materials Morphology Logic gates Silicon Nanoscale devices Filling

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Switching at Less Than 60 mV/Decade with a “Cold” Metal as the Injection Source

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Physical Review Applied 2020年第6期13卷 064037-064037页

作者： Fei Liu Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits (MoE) Peking University Beijing 100871 China

Power dissipation is a great challenge for the continuous scaling down and performance improvement of CMOS technology, due to the thermionic-current switching limit of conventional MOSFETs. In this paper, we show that this problem can be overcome by using a “cold” metal as the injection source of a transistor; these metals are different from conventional metals and can filter out high-energy electrons to break the “Boltzmann tyranny.” It is proved that the subthreshold swing of the thermionic current of a transistor using a “cold”-metal contact can be much smaller than 60 mV/decade at room temperature. Specifically, the two-dimensional transition-metal-dichalcogenide (TMD) “cold” metals NbX2 and TaX2 (X=S,Se,Te) are proposed as injection sources for FETs. Quantum transport simulations indicate that a promising switching efficiency and on-state current can be achieved using TMD “cold”-metal injection sources, which is beneficial for energy efficiency.

关键词： Ballistic transport Band gap Thermionic emission Field-effect transistors Metals Transition metal dichalcogenides First-principles calculations

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Single-Electron Transistor Based on Cobalt Oxide

Single-Electron Transistor Based on Cobalt Oxide

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IEEE International Symposium on circuits and Systems

作者： Muchan Li Zhongzheng Tian Xuemin Yu Dacheng Yu Zhongyang Ren Liming Ren Yunyi Fu Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing P. R. China

In this paper, we propose and implement a single-electron transistor (SET) based on cobalt oxide for the first time. The SETs were fabricated through nanofabrication process compatible with the CMOS technology. A cobalt oxide (Co1-yO) on the surface of the source (S) and drain (D) Co electrodes is utilized to act as a quantum dot (QD). The diameter of QD is calculated to be 2.3 nm. The interface between Co1-yO and Co thin films (S/D electrodes) is used as tunneling junctions. The SET based on CoO exhibits typical single electron transport characteristics. Owing to the high Coulomb blockade energy (～180 meV), the Coulomb blockade regions still remain at room temperature (300 K), revealing the nanometer scale CoO-based SETs have great potential to operate at room temperature.

关键词： Electrodes Temperature Quantum dots Tunneling Cobalt Junctions Single electron transistors

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