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arXiv 2024年

作者： Jiang-Tao, Liu Peng, Deli Yang, Qin Liu, Ze Wu, Zhenhua College of Physics and Mechatronic Engineering Guizhou Minzu University Guiyang550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Institute of Superlubricity Technology Research Institute of Tsinghua University in Shenzhen Shenzhen518057 China Department of Engineering Mechanics Tsinghua University Beijing100084 China School of Integrated Circuits University of CAS Beijing100049 China

The optical manipulation of nanoparticles on superlubricity surfaces is investigated. The research revealed that, due to the near-zero static friction and extremely low dynamic friction at superlubricity interfaces, the maximum intensity for controlling the optical field can be less than 100 W/cm2, which is nine orders of magnitude lower than controlling nanoparticles on traditional interfaces. The controlled nanoparticle radius can be as small as 5 nm, which is more than one order of magnitude smaller than nanoparticles controlled through traditional optical manipulation. Manipulation can be achieved in sub-microsecond to microsecond timescales. Furthermore, the manipulation takes place on solid surfaces and in non-liquid environments, with minimal impact from Brownian motion. By appropriately increasing dynamic friction, controlling light intensity, or reducing pressure, the effects of Brownian motion can be eliminated, allowing for the construction of microstructures with a size as small as 1/75 of the wavelength of light. This enables the control of super-resolution optical microstructures. The optical super-resolution manipulation of nanoparticles on superlubricity surfaces will find important applications in fields such as nanofabrication, photolithography, optical metasurface, and biochemical analysis. © 2024, CC BY.

关键词： Nanoparticles

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Topology Optimization of Random Memristors for Input-Aware Dynamic SNN

arXiv

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arXiv 2024年

作者： Wang, Bo Wang, Shaocong Lin, Ning Li, Yi Yu, Yifei Zhang, Yue Yang, Jichang Wu, Xiaoshan He, Yangu Wang, Songqi Chen, Rui Li, Guoqi Qi, Xiaojuan Wang, Zhongrui Shang, Dashan Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Key Laboratory of Brain Cognition and Brain-inspired Intelligence Technology Institute of Automation Chinese Academy of Sciences Beijing100190 China University of Chinese Academy of Sciences Beijing100049 China

There is unprecedented development in machine learning, exemplified by recent large language models (GPT4) and world simulators (SORA), which are artificial neural networks (ANNs) running on digital computers. However, they still cannot parallel human brains in terms of energy efficiency and the streamlined adaptability to inputs of different difficulties, due to differences in signal representation, optimization, run-time reconfigurability, and hardware architecture. To address these fundamental challenges, we introduce pruning optimization for input-aware dynamic memristive spiking neural network (PRIME). Signal representation-wise, PRIME employs leaky integrate-and-fire neurons to emulate the brain’s inherent spiking mechanism. Drawing inspiration from the brain’s structural plasticity, PRIME optimizes the topology of a random memristive SNN, without expensive memristor conductance fine-tuning. For runtime reconfigurability, inspired by the brain’s dynamic adjustment of computational depth, PRIME employs an input-aware dynamic early stop policy to minimize latency during inference, thereby boosting energy efficiency without compromising performance. Architecture-wise, PRIME leverages memristive in-memory computing, mirroring the brain and mitigating the von Neumann bottleneck. We validated our system using a 40 nm 256 Kb memristor-based in-memory computing macro on neuromorphic image classification and image inpainting. Our results demonstrate the classification accuracy and Inception Score (IS) are comparable to the software baseline, while achieving 37.83× and 62.50× improvements in energy efficiency. Furthermore, we attained 77.0% and 12.5% computational load savings with minimal reduction in performance. The system also exhibits robustness against stochastic synaptic noise of analogue memristors. Our software-hardware co-designed model paves the way to future brain-inspired neuromorphic computing of brain-like energy efficiency and adaptivity. Copyright © 202

关键词： Memristors

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Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

arXiv

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arXiv 2023年

作者： Luo, Kun Gan, Weizhuo Hou, Zhaozhao Zhan, Guohui Xu, Lijun Liu, Jiangtao Lu, Ye Wu, Zhenhua Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China HiSilicon Technologies Shenzhen China College of Mechanical and Electrical Engineering Guizhou Minzu University Guiyang550025 China The School of Information Science and Technology Fudan University Shanghai200433 China

Recently, cold source transistor (CSFET) with steep-slope subthreshold swing (SS) 2 and CoSi2). The dependence of the thermalization factor, relaxation time, scattering time and scattering rate on energy level are obtained. The thermalization of carrier gradually increases from low energy to high energy. Partially thermalization from the ground state to reach the thermionic current window is realized with sub-100 fs time scale. Fully thermalization to entail energy region depends on the barrier height sensitively, i.e., the scattering rate decreases exponentially as the energy of the out-scattering state increase. The scattering rate of NiSi2 and CoSi2 is 2 orders of magnitude higher than that of Si, arising from their higher density of states than that in Silicon This study can shed light on the material design for low power tunneling FET as well as the emerging CSFET. Copyright © 2023, The Authors. All rights reserved.

关键词： Silicides

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A Readout Circuit with Current-Compensation-Based Extended-Counting ADC for 1024×768 Diode Uncooled Infrared Imagers

A Readout Circuit with Current-Compensation-Based Extended-C...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Shanzhe Yu Xueyou Shi Yacong Zhang Guangyi Chen Siyuan Ye Wengao Lu Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University China Peking University Information Technology Institute (Tianjin Binhai) China

This paper presents a low-power readout circuit with 14-bit column-level extended-counting ADC for 17μm-pitch 1024 × 768 silicon diode uncooled infrared imagers. The ADC's coarse conversion adopts a current-mode DAC to feedback charge into a CTIA-based integrator during integration and the fine conversion is implemented by a SAR ADC after integration. A current self-compensator and a modified DAC are proposed to reduce more than 50% power of the overall integrator compared with conventional structure. The 1024 × 768 readout circuit has been fabricated in the 0.18 μm 1P5M CMOS process. Power consumption of the readout circuit is 104mW and each column ADC only consumes 15μW. Simulation results show that the RMS noise of the readout circuit is 0.9LSB and nonlinearity is 0.06% at 30fps.

关键词： Power demand circuits and systems Simulation Linearity CMOS process Silicon

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Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height

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Chinese Physics B 2020年第2期29卷 420-424页

作者： Zhong-Xu Wang Lin Du Jun-Wei Liu Ying Wang Yun Jiang Si-Wei Ji Shi-Wei Dong Wei-Wei Chen Xiao-Hong Tan Jin-Long Li Xiao-Jun Li Sheng-Lei Zhao Jin-Cheng Zhang Yue Hao Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China Shanghai Precision Metrology and Testing Research Institute Shanghai 201109China China Academy of Space Technology(Xi'an) Xi'an 710000China Sichuan Institute of Solid-State Circuits CETCChongqing 400060China

A large gate metal height technique is proposed to enhance breakdown voltage in GaN channel and AlGaN channel high-electron-mobility-transistors(HEMTs).For GaN channel HEMTs with gate-drain spacing LGD=2.5μm,the breakdown voltage VBR increases from 518 V to 582 V by increasing gate metal height h from 0.2μm to 0.4μ*** GaN channel HEMTs with LGD=7μm,VBR increases from 953 V to 1310 V by increasing h from 0.8μm to 1.6μ*** breakdown voltage enhancement results from the increase of the gate sidewall capacitance and depletion region *** Al0.4Ga0.6N channel HEMT with LGD=7μm,VBR increases from 1535 V to 1763 V by increasing h from 0.8μm to 1.6μm,resulting in a high average breakdown electric field of 2.51 MV/*** and analysis indicate that the high gate metal height is an effective method to enhance breakdown voltage in GaN-based HEMTs,and this method can be utilized in all the lateral semiconductor devices.

关键词： GaN channel HEMTs AlGaN channel HEMTs breakdown voltage gate metal height

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Quantum transport quality of a processed undoped Ge/SiGe heterostructure

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Physical Review B 2023年第4期108卷 045303-045303页

作者： Yi-Xin Li Zhenzhen Kong Shimin Hou Guilei Wang Shaoyun Huang Beijing Key Laboratory of Quantum Devices Key Laboratory for the Physics and Chemistry of Nanodevices Peking University Beijing 100871 People's Republic of China Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 People's Republic of China School of Integrated Circuits University of Chinese Academy of Sciences Beijing 100049 People's Republic of China Hefei National Laboratory Hefei 230088 People's Republic of China and Beijing Superstring Academy of Memory Technology Beijing 100176 People's Republic of China

A degraded mobility of 5.2×105cm2V−1s−1 but a long quantum scattering time of 2.3 ps at the hole density of 2.25×1011cm−2 were obtained from a two-dimensional hole gas in a processed undoped Ge/SiGe heterostructure Hall-bar field-effect device. The heterostructure was grown by the reduced pressure chemical vapor deposition method and the device fabrications were compatible with well-established semiconductor technology. The percolation density of 0.69×1011cm−2 indicated a very low disorder potential landscape experienced by holes in the strained Ge quantum well. In addition to integer quantum Hall effects (IQHEs) of consecutive filling factors from ν=8 down to 1, we also observed the quantum states at filling factors between ν=1 and 2, and between ν=2 and 3 at 1.71 K. The observation of quantum Hall effects at the inferior mobility confirmed the mobility/quality dichotomy in the ultraclean undoped Ge/SiGe heterostructure. The study explicitly indicated that the device fabrication process likely compromised the transport mobility, whereas the quantum quality was less influenced, and established the heterostructure as an ideal platform for quantum device implementations.

关键词： Electrical properties Fractional quantum Hall effect Quantum Hall effect Quantum wells Two-dimensional electron system Epitaxy Hall bar Methods in transport Shubnikov-de Haas effect

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Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges

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Science China(Information Sciences) 2025年第6期68卷 118-173页

作者： Xiao YU Ni ZHONG Yan CHENG Tianjiao XIN Qing LUO Tiancheng GONG Jiezhi CHEN Jixuan WU Ran CHENG Zhiyuan FU Kechao TANG Jin LUO Tianling REN Fei XUE Lin CHEN Tianyu WANG Xueqing LI Xiuyan LI Ping WANG Xinqiang WANG Jie SUN Anquan JIANG Peiyuan DU Bing CHEN Chengji JIN Jiajia CHEN Haoji QIAN Wei MAO Siying ZHENG Huan LIU Haiwen XU Can LIU Zhihao SHEN Xiaoxi LI Bochang LI Zheng-Dong LUO Jiuren ZHOU Yan LIU Yue HAO Genquan HAN Hangzhou Institute of Technology Xidian University Faculty of Integrated Circuits Xidian University Key Laboratory of Polar Materials and Devices(MOE) Department of Electronics East China Normal University State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences School of Information Science and Engineering Shandong University College of Integrated Circuit Zhejiang University School of Integrated Circuits Southeast University School of Integrated Circuits Peking University School of Integrated Circuits Tsinghua University Center for Quantum Matter School of Physics Zhejiang University School of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Department of Electronic Engineering Tsinghua University National Key Laboratory of Micro and Nano Fabrication Technology and the Department of Micro-Nano Electronics Shanghai Jiao Tong University State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics School of Physics Peking University Hangzhou Huarui Chip Innovation Technology Co. Ltd.

Hafnium（Hf） oxide-based ferroelectric materials have emerged as a transformative platform for next-generation non-volatile memory and advanced computing technologies. This review comprehensively examines the development, challenges, and applications of HfO2ferroelectrics, emphasizing their CMOS compatibility, scalability, and robust polarization at nanoscale dimensions. Breakthroughs in doping strategies, stress engineering, and VO control have stabilized the metastable orthorhombic phase, enabling high-performance devices such as ferroelectric RAM（FeRAM）, ferroelectric field-effect transistors（FeFETs）, and ferroelectric tunnel junctions（FTJs）. These devices offer ultrafast switching, low power consumption, and multi-level storage, driving innovations in neuromorphic computing, in-memory processing, and cryogenic systems; nonetheless, they face ongoing challenges in reliability, such as fatigue and imprint effects, and scalability at sub-5 nm technology nodes. Emerging frontiers, such as wurtzite-structured nitrides（e.g., AlScN） and antiferroelectric ZrO2-based systems, have garnered significant attention due to their exceptionally high remanent polarization and promising potential for enhanced endurance, respectively. Further addressing the reliability issues of these emerging ferroelectric materials and the challenges associated with large-scale integration processes through interdisciplinary efforts will unlock the full potential of ferroelectric technologies, positioning them as pivotal enablers of post-Moore computing architectures and sustainable AI-driven applications.

关键词： ferroelectric HfO$_{2}$ zirconium oxide ZrO$_{2}$ wurtzite AlScN FeRAM FeFET

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A Reconfigurable Mixed Signal CMOS Design for Multiple STDP Learning Rules

A Reconfigurable Mixed Signal CMOS Design for Multiple STDP ...

引用

International Conference on Electronics Technology (ICET)

作者： Chongyang Huan Yuan Wang Xiaoxin Cui Xing Zhang Key Laboratory of Microelectronics Devices and Circuits (MoE) Institute of Microelectronics Peking University Peking China

ISBN: (数字)9781728162836

ISBN: (纸本)9781728162843

Spike-timing-dependent-plasticity (STDP) is the learning algorithm for spiking neural network (SNN), which promises to obtain deeper understanding of biological neural system and more powerful artificial intelligence. However, most implementations for STDP learning rules have shortcomings in reconfigurability and richness. In this paper, a reconfigurable mixed-signal neuromorphic circuit for multiple STDP learning rules is proposed. Adopting phenomenological models, the design is easy to implement. Under a 65nm CMOS technology, simulation results show that the energy consumption for a weight update option is about 1~50 fJ/spike. The proposed circuit is suitable for neuromorphic applications using various STDP rules.

关键词： operational transconductance amplifier (OTA) neuromorphic engineering spike timing dependent plasticity (STDP) reconfigurability Neuromorphic engineering learning algorithms configurability Neuromorphics Learning energy consumption Rule

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Emerging Internet of Things driven carbon nanotubes-based devices

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Nano Research 2022年第5期15卷 4613-4637页

作者： Shu Zhang Jinbo Pang Yufen Li Feng Yang Thomas Gemming Kai Wang Xiao Wang Songang Peng Xiaoyan Liu Bin Chang Hong Liu Weijia Zhou Gianaurelio Cuniberti Mark HRümmeli Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong Institute for Advanced Interdisciplinary Research(iAIR)University of JinanJinan 250022China Department of Chemistry Guangdong Provincial Key Laboratory of CatalysisSouthern University of Science and TechnologyShenzhen 518055China Leibniz Institute for Solid State and Materials Research Dresden P.O.Box 270116Dresden D-01171Germany State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong University27 Shandanan RoadJinan 250100China School of Electrical Engineering Qingdao UniversityQingdao 266071China Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences 1068 Xueyuan AvenueShenzhen University TownShenzhen 518055China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Chemistry and Chemical Engineering University of JinanJinan 250022China College of Energy Soochow Institute for Energy and Materials InnovationsSoochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Institute of Environmental Technology(CEET) VSB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics D

Carbon nanotubes(CNTs)have attracted great attentions in the field of electronics,sensors,healthcare,and energy *** emerging applications have driven the carbon nanotube research in a rapid ***,the structure control over CNTs has inspired an intensive research vortex due to the high promises in electronic and optical device ***,this in-depth review is anticipated to provide insights into the controllable synthesis and applications of high-quality ***,the general synthesis and post-purification of CNTs are briefly ***,the state-of-the-art electronic device applications are discussed,including field-effect transistors,gas sensors,DNA biosensors,and pressure ***,the optical sensors are delivered based on the *** addition,energy applications of CNTs are discussed such as thermoelectric energy ***,future opportunities are proposed for the Internet of Things(IoT)oriented sensors,data processing,and artificial intelligence.

关键词： carbon nanotubes electronics sensors electronic skins Internet of Things artificial intelligence

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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