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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Enbin Gong Hao Zhang Xiaolong Chen Le Ye Ru Huang Key Laboratory of Microelectronics Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (数字)9781728133201

ISBN: (纸本)9781728133218

A 2.4-GHz 16-QAM ultra-low-power passive transmitter for wireless self-power chips in IoT is proposed. To expand wireless sensor networks, it achieves energy harvest and low-power wireless communication with 2.4-GHz infrastructure. Besides, the backscatter technique is employed to reduce power consumption and is compatible with multiple quadrature amplitude modulation (M-QAM) to increase data rate. Measured results show that the transmitter just dissipates 1 μW from 1.8-V supply voltage with 6.46% EVM at 4-Mb/s data rate. Moreover, the transmitter has great availability whether at 100 Mb/s data rate or for the input power of a wide dynamic range. The chip is fabricated in the 0.18-μm 1P6M standard CMOS process and occupies a silicon area of 1465 × 915 μm 2 without pads.

关键词： Backscatter Power demand Wireless sensor networks Wireless communication Radio frequency Capacitors Quadrature amplitude modulation

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Rectangular suspended single crystal Si nanowire with (001) planes and <001> direction developed via TMAH wet chemical etching

Rectangular suspended single crystal Si nanowire with (001) ...

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China Semiconductor Technology International Conference (CSTIC)

作者： Shuang Sun Baotong Zhang Yuancheng Yang Xia An Xiaoyan Xu Ru Huang Ming Li Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this study, a kind of rectangular suspended single crystal Si nanowire with (001) planes and along direction is developed via a CMOS-compatible top-down scheme. In this scheme, the nanowires are formed by anisotropic etching of TMAH on different silicon crystallography orientations. By designing the initial orientations of hard mask patterns, the rectangular suspended silicon nanowires can be successfully fabricated without any sacrificial epitaxial layers. Due to the damage-free process and the high mobility on (001) planes, this scheme will provide a high-quality channel for the future gate-alI-around silicon transistor technology.

关键词： Epitaxial layers Logic gates Silicon Etching Transistors Crystallography Chemicals

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Continuous-Time Digital Twin with Analogue Memristive Neural Ordinary Differential Equation Solver

arXiv

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arXiv 2024年

作者： Chen, Hegan Yang, Jichang Chen, Jia Wang, Songqi Wang, Shaocong Wang, Dingchen Tian, Xinyu Yu, Yifei Chen, Xi Lin, Yinan He, Yangu Wu, Xiaoshan Li, Yi Zhang, Xinyuan Lin, Ning Xu, Meng Li, Yi Zhang, Xumeng Wang, Zhongrui Wang, Han Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Institute of the Mind The University of Hong Kong Hong Kong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan430074 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong

Digital twins, the cornerstone of Industry 4.0, replicate real-world entities through computer models, revolutionising fields such as manufacturing management and industrial automation. Recent advances in machine learning provide data-driven methods for developing digital twins using discrete-time data and finite-depth models on digital computers. However, this approach fails to capture the underlying continuous dynamics and struggles with modelling complex system behaviour. Additionally, the architecture of digital computers, with separate storage and processing units, necessitates frequent data transfers and Analogue-Digital (A/D) conversion, thereby significantly increasing both time and energy costs. Here, we introduce a memristive neural ordinary differential equation (ODE) solver for digital twins, which is capable of capturing continuous-time dynamics and facilitates the modelling of complex systems using an infinite-depth model. By integrating storage and computation within analogue memristor arrays, we circumvent the von Neumann bottleneck, thus enhancing both speed and energy efficiency. We experimentally validate our approach by developing a digital twin of the HP memristor, which accurately extrapolates its nonlinear dynamics, achieving a 4.2-fold projected speedup and a 41.4-fold projected decrease in energy consumption compared to state-of-the-art digital hardware, while maintaining an acceptable error margin. Additionally, we demonstrate scalability through experimentally grounded simulations of Lorenz96 dynamics, exhibiting projected performance improvements of 12.6-fold in speed and 189.7-fold in energy efficiency relative to traditional digital approaches. By harnessing the capabilities of fully analogue computing, our breakthrough accelerates the development of digital twins, offering an efficient and rapid solution to meet the demands of Industry 4.0. © 2024, CC BY-NC-SA.

关键词： Energy utilization

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Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

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Journal of Semiconductors 2021年第11期42卷 18-25页

作者： Xiaorui Zhang Huiping Zhu Song’ang Peng Guodong Xiong Chaoyi Zhu Xinnan Huang Shurui Cao Junjun Zhang Yunpeng Yan Yao Yao Dayong Zhang Jingyuan Shi Lei Wang Bo Li Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Department of Chemistry City University of Hong KongHong Kong 999077China

Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer ***,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation ***,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/*** negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide *** stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is ***,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet *** analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.

关键词： SWCNT FETs low-energy proton irradiation radiation effects electrical performance TID effect displacement damage effect simulation

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Polarization tunable bidirectional photoresponse in Van der Waals α−In2Se3/NbX2 (X=S,Se,andTe) ferroelectric diodes

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Physical Review Materials 2023年第8期7卷 084412-084412页

作者： Shibo Fang Qiuhui Li Chen Yang Baochun Wu Shiqi Liu Jie Yang Jiachen Ma Zongmeng Yang Kechao Tang Jing Lu State Key Laboratory for Mesoscopic Physics and School of Physics Peking University Beijing 100871 People's Republic of China State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100871 People's Republic China Key Laboratory of Spintronics Materials Devices and Systems of Zhejiang Province Hangzhou 311305 People's Republic of China Key Laboratory of Material Physics School of Physics and Microelectronics Ministry of Education Zhengzhou University Zhengzhou 450001 People's Republic of China Research Center for Materials Architectures and Integration of Nanomembranes (MAIN) Chemnitz University of Technology 09126 Chemnitz Germany School of Integrated Circuits Peking University Beijing 100871 People's Republic of China Collaborative Innovation Center of Quantum Matter Beijing 100871 People's Republic of China Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD) Peking University Beijing 100871 People's Republic of China Peking University Yangtze Delta Institute of Optoelectronics Nantong 226010 People's Republic of China Key Laboratory for the Physics and Chemistry of Nanodevices Peking University Beijing 100871 People's Republic of China

Ferroelectric diodes can generate a polarization-controlled bidirectional photoresponse to simulate inhibition and promotion behaviors in the artificial neuromorphic system with fast speed, high energy efficiency, and nonvolatility. However, the existing ferroelectric diodes based on ferroelectric oxides suffer from a weak bidirectional photoresponse (below 1 mA/W), difficult miniaturization, and a large response photon energy (over 3 eV). Here, we design a series of van der Waals α−In2Se3/NbX2 (X = S, Se, and Te) ferroelectric diodes with bidirectional photoresponse by using ab initio quantum transport simulation. These devices show a maximum bidirectional photoresponse of 30 (−19) mA/W and a minimum response photon energy of 1.3 eV at the monolayer thickness. Our work shows advanced optoelectronic applications of the van der Waals ferroelectric diodes in the future artificial neuromorphic system.

关键词： Ferroelectricity First-principles calculations Photocurrent 2-dimensional systems Diodes Ferroelectrics Density functional theory Landauer formula

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Ferroelectricity in HfO2 from a chemical perspective

arXiv

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arXiv 2022年

作者： Yuan, Jun-Hui Mao, Ge-Qi Xue, Kan-Hao Bai, Na Wang, Chengxu Cheng, Yan Lyu, Hangbing Sun, Huajun Wang, Xingsheng Miao, Xiangshui School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan430074 China Hubei Yangtze Memory Laboratories Wuhan430205 China Department of Electronics East China Normal University Shanghai200241 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Ferroelectricity observed in thin film HfO2, either doped with Si, Al, etc. or in the Hf0.5Zr0.5O2 form, has gained great technical significance. However, the soft mode theory faces a difficulty in explaining the origin of such ferroelectricity. In this work, we propose that the 7 cation coordination number of HfO2/ZrO2 lies at the heart of this ferroelectricity, which stems from the proper ionic radii of Hf/Zr compared with O. Among the numerous compounds with non-centrosymmetric nature, e.g., mm2 point group, HfO2 and ZrO2 are special in that they are close to the border of 7 and 8 cation coordination, such that the 8-coordination tetragonal intermediate phase could greatly reduce the switching barrier. Other 7-coordination candidates, including SrI2, TaON, YSBr and YOF are also studied in comparison to HfO2/ZrO2, and six switching paths are analyzed in detail for the Pca21 phase. A rule of preferred switching path in terms of ionic radii ratio and coordination number has been established. We also show the possible route from ferroelectric Pca21 phase to monoclinic P21/c phase in HfO2, which is relevant to the fatigue phenomenon. Copyright © 2022, The Authors. All rights reserved.

关键词： Ferroelectricity

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Physical Insights into the Impact of Internal Metal Gate on the Subthreshold Behavior of NCFET Based on Domain Switching Dynamics

Physical Insights into the Impact of Internal Metal Gate on ...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Tianyue Fu Qianqian Huang Liang Chen Chang Su Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

In this work, the influences of the internal metal of gate stack in Negative Capacitance FET (NCFET) are clarified based on domain switching dynamics physically. By analyzing the equivalent ferroelectric (FE)/dielectric (DE) series capacitor, a new method is proposed to study the domain switching process for metal-ferroelectric-insulator-metal (MFIM) structure. Our results illustrate that NC effect of FE/DE series capacitor is closely related to the switching capabilities of FE layer, embodied by the distribution of switching activation field Ea of domains, which also provide the design direction of FE layer for the subthreshold swing optimization of NCFET.

关键词： Switches Iron Logic gates Capacitors Periodic structures Optimization Electric potential

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Origin of Steep Subthreshold Swing Within the Low Drain Current Range in Negative Capacitance Field Effect Transistor

Origin of Steep Subthreshold Swing Within the Low Drain Curr...

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China Semiconductor Technology International Conference (CSTIC)

作者： Chang Su Qianqian Huang Mengxuan Yang Liang Chen Zhongxin Liang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

Negative capacitance FET (NCFET) can achieve the steeper subthreshold swing (SS) than conventional MOSFET for the reduction of supply voltage V DD , while many experimental results indicate that NCFETs show the steeper SS only within a limited drain current range. In this work, the physical origin and parameter impacts of drain current range corresponding to steeper SS in NCFET are investigated, based on the modeling of domain switching dynamics of ferroelectric (FE). It is found that the larger remnant polarization is beneficial for the steeper SS with the larger drain current range. Besides, simulation results indicate that only within the limited window of sweeping rate and FE switching time, the drain current range can be enlarged for the steeper switching in NCFET.

关键词： MOSFET Simulation Switches Capacitance Iron Hafnium compounds Switching circuits

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Device Modeling and Application Simulation of Ferroelectric-FETS with Dynamic Multi-Domain Behavior

Device Modeling and Application Simulation of Ferroelectric-...

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China Semiconductor Technology International Conference (CSTIC)

作者： Zhiyuan Fu Cheng Chen Jin Luo Qianqian Huang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, a ferroelectric-FET (FeFET) model based on multi-domain Preisach theory is developed. Instead of the single-domain Landau-Khalatnikvo (L-K) and tanh based model, the Preisach model with dynamic module is established to accurately model the dynamic behavior of multi-domain FeFET. Moreover, a FeFET-based neuron structure is presented and simulated based on the developed device model, showing the promising potential of FeFET for neuromorphic computing.

关键词： Semiconductor device modeling Neuromorphic engineering Computational modeling Neurons

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Implementation of Lateral Divisive Inhibition Based on Ferroelectric Fet with Ultra-Low Hardware Cost for Neuromorphic Computing

Implementation of Lateral Divisive Inhibition Based on Ferro...

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China Semiconductor Technology International Conference (CSTIC)

作者： Shuhan Liu Tianyi Liu Zhiyuan Fu Cheng Chen Qianqian Huang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, a novel bio-inspired hardware design of lateral divisive inhibition is proposed and demonstrated by using only one transistor of ferroelectric FET. The proposed design is simulated based on our developed FeFET model, and is also proved to be functional in spiking neural network. The new design with ultra-low hardware cost exhibits good biological plausibility, showing its great potential for neuromorphic computing.

关键词： Neuromorphic engineering Computational modeling Biological system modeling Neural networks Hardware Transistors Task analysis

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