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Radio frequency electronics on plastic

Radio frequency electronics on plastic

引用

SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, IMOC 2015

作者： Ellinger, F. Ishida, K. Shabanpour, R. Meister, T. Boroujeni, B.K. Carta, C. Petti, L. Salvatore, G.A. Tröster, G. Münzenrieder, N. Department of Circuit Design and Network Theory Technische Universität Dresden Dresden Germany Electronics Laboratory Swiss Federal Institute of Technology Zurich Switzerland Sensor Technology Research Center University of Sussex Sussex United Kingdom

ISBN: (纸本)9781467394925

In this paper the recent progress of active high frequency electronics on plastic is discussed. This technology is mechanically flexible, bendable, stretchable and does not need any rigid chips. Indium Gallium Zinc Oxide (IGZO) technology is applied. At 2 V supply and gate length of 0.5 μm, the thin-film transistors (TFTs) yield a measured transit frequency of 138 MHz. Our scalable TFT compact simulation model shows good agreement with measurements. To achieve a sufficiently high yield, TFTs with gate lengths of around 5 μm are used for the circuit design. A Cherry Hopper amplifier with 3.5 MHz bandwidth, 10 dB gain and 5 mW dc power is presented. The fully integrated receiver covering a plastic foil area of 3 x 9 mm2 includes a four stage cascode amplifier, an amplitude detector, a baseband amplifier and a filter. At a dc current of 7.2 mA and a supply of 5 V, a bandwidth of 2 - 20 MHz and a gain beyond 15 dB were measured. Finally, an outlook regarding future advancements of high frequency electronics on plastic is given. © 2015 IEEE.

关键词： Thin films

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Square-shape fully printed chipless RFID tag and its applications in evacuation procedures

Square-shape fully printed chipless RFID tag and its applica...

引用

European Conference on Antennas and Propagation, EuCAP

作者： Diego Betancourt Raji Nair Katherina Haase Georg Schmidt Maxi Bellmann Daniel Höft Arved Hübler Frank Ellinger Chair for Circuit Design and Network Theory Dresden Germany Institute for Print and Media Technology Chemnitz Germany

Herein, square-shaped chipless RFID tags are reported. Thereby, the development of the design, the applied fabrication process and the experimental verification are described. The designed tags, which are based on Frequency Selective Surfaces, are produced by screen printing on flexible PET and paper substrates and are considered suitable for the fabrication by means of roll-to-roll printing technologies. The functionality is proved by both, the measurements inside and outside the anechoic chamber. In order to corroborate the tag's independence to the position feature, the tags are further measured for several rotation and tilt angles. During measurements in the anechoic chamber, a reading distance up to 1.8 m could be demonstrated. Furthermore, a new optimized methodology for semi-automatic measurements that reduces the time per measured tag is introduced. Moreover, for the first time a chipless RFID tag to be applied in evacuation procedures under crisis events is proposed.

关键词： Semiconductor device measurement Antenna measurements Anechoic chambers Substrates RFID tags Positron emission tomography

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Radio frequency electronics on plastic

Radio frequency electronics on plastic

引用

SBMO/IEEE MTT-S International Conference on Microwave and Optoelectronics (IMOC)

作者： F. Ellinger K. Ishida R. Shabanpour T. Meister B. K. Boroujeni C. Carta L. Petti G. A. Salvatore G. Tröster N. Münzenrieder Chair for Circuit Design and Network Theory Technische Universität Dresden Dresden Germany Technische Universitat Dresden Dresden Sachsen DE Electronics Laboratory Swiss Federal Institute of Technology Switzerland Zurich Sensor Technology Research Center University of Sussex Sussex UK

In this paper the recent progress of active high frequency electronics on plastic is discussed. This technology is mechanically flexible, bendable, stretchable and does not need any rigid chips. Indium Gallium Zinc Oxide (IGZO) technology is applied. At 2 V supply and gate length of 0.5 μm, the thin-film transistors (TFTs) yield a measured transit frequency of 138 MHz. Our scalable TFT compact simulation model shows good agreement with measurements. To achieve a sufficiently high yield, TFTs with gate lengths of around 5 μm are used for the circuit design. A Cherry Hopper amplifier with 3.5 MHz bandwidth, 10 dB gain and 5 mW dc power is presented. The fully integrated receiver covering a plastic foil area of 3 × 9 mm 2 includes a four stage cascode amplifier, an amplitude detector, a baseband amplifier and a filter. At a dc current of 7.2 mA and a supply of 5 V, a bandwidth of 2 - 20 MHz and a gain beyond 15 dB were measured. Finally, an outlook regarding future advancements of high frequency electronics on plastic is given.

关键词： Thin film transistors Radio frequency Receivers Plastics Gain Logic gates Wireless communication

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A Fully Printed Passive Chipless RFID Tag for Low-Cost Mass Production

A Fully Printed Passive Chipless RFID Tag for Low-Cost Mass ...

引用

European Conference on Antennas and Propagation

作者： Raji Nair Marvin Barahona Diego Betancourt Georg Schmidt Maxi Bellmann Daniel Hoft Dirk Plettemeier Arved Hubler Frank Ellinger Chair for Circuit Design and Network Theory TU Dresden Institute for Print and Media Technology TU Chemnitz Chair for RF Engineering TU Dresden

ISBN: (纸本)9781479924318

In this paper a 3 bit chipless RFID tag able to be printed using mass production techniques is introduced. The structure proposed is based on dipole like structures and three of such dipoles conforms a tag. Several chipless RFID tag prototypes were fabricated on PET substrate and measured within the frequency band from 2 GHz to 5 GHz. In contrast to the already reported printed tags where inkjet printing is used, the proposed tag is fabricated using screen printing techniques which enable fast mass production of tags in a very short time with thick conductive tracks of ～10 μm. A good agreement between simulation and measurement was obtained and a reading distance up to 1 m is obtained with a transmission power of 3 dBm. The obtained results confirm the use of low cost printed tags for mass market applications.

关键词： Chipless Screen-printing RFID Backscattering RCS Frequency shift encoding

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Cherry-Hooper amplifiers with 33 dB gain at 400 kHz BW and 10 dB gain at 3.5 MHz BW in flexible self-aligned a-IGZO TFT technology

Cherry-Hooper amplifiers with 33 dB gain at 400 kHz BW and 1...

引用

IEEE International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS)

作者： R. Shabanpour T. Meister K. Ishida B. Kheradmand Boroujeni C. Carta U. Jörges F. Ellinger L. Petti N. Münzenrieder G.A. Salvatore G. Tröster Chair for Circuit Design and Network Theory Technische UniversitÄt Dresden Dresden Germany Institute for Electronics Swiss Federal Institute of Technology Zurich Zurich Switzerland

This paper presents two Cherry-Hooper amplifiers for bendable analog radio-frequency electronic systems fabricated in flexible self-aligned amorphous indium gallium zinc oxide (a-IGZO) thin-film-transistor (TFT) technology. The first circuit is a wideband single-stage Cherry-Hooper amplifier providing a voltage gain of 10.4 dB over a 3 dB bandwidth of 3.5 MHz and a gain-bandwidth product (GBP) of 11.6 MHz. For the second circuit, a two-stage Cherry-Hooper amplifier, a voltage gain of 33.3 dB with a 3 dB bandwidth of 400 kHz and a GBP of 18.5 MHz were measured. The simulations, which are based on a Rensselaer Polytechnic institute-amorphous TFT (RPI-aTFT) model, are in good agreement with measurements.

关键词： Gain Thin film transistors Bandwidth Voltage measurement Frequency measurement Radio frequency Integrated circuit modeling

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A 2.62 MHz 762 μw cascode amplifier in flexible a-IGZO thin-film technology for textile and wearable-electronics applications

A 2.62 MHz 762 μw cascode amplifier in flexible a-IGZO thin...

引用

2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, design, Packaging, Simulation and Test, ISCDG 2013

作者： Shabanpour, R. Ishida, K. Perumal, C. Boroujeni, B.K. Meister, T. Carta, C. Ellinger, F. Petti, L. Munzenrieder, N. Salvatore, G.A. Troster, G. Circuit Design and Network Theory Dresden University of Technology Germany Institute for Electronics Swiss Federal Institute of Technology Zurich Switzerland

ISBN: (纸本)9781479912506

This paper presents a cascode amplifier for bendable analog and radio-frequency electronic systems in a flexible amorphous indium gallium zinc oxide (a-IGZO) TFT technology, featuring a minimum gate length of 5 μm. The design is optimized for large bandwidth. The circuit design was carried out with a MOSFET LEVEL=3 SPICE model template. The required model parameters were extracted from both DC and AC measured characteristics. Measurements results show 10.5 dB of voltage gain and a 3 dB bandwidth of 2.62 MHz;the small-signal performance was closely predicted by simulations. The presented circuit provides the highest frequency of operation reported for a single-stage cascode amplifier in a-IGZO TFT technology to date. © 2013 IEEE.

关键词： Thin film transistors

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A 2.62 MHz 762 µW cascode amplifier in flexible a-IGZO thin-film technology for textile and wearable-electronics applications

A 2.62 MHz 762 µW cascode amplifier in flexible a-IGZO thin...

引用

Semiconductor Conference Dresden

作者： R. Shabanpour K. Ishida C. Perumal B. K. Boroujeni T. Meister C. Carta F. Ellinger L. Petti N. Münzenrieder G.A. Salvatore G. Tröster Chair for Circuit Design and Network Theory Dresden University of Technology Dresden Germany Institute for Electronics Swiss Federal Institute of Technology Zurich Zurich Switzerland

This paper presents a cascode amplifier for bendable analog and radio-frequency electronic systems in a flexible amorphous indium gallium zinc oxide (a-IGZO) TFT technology, featuring a minimum gate length of 5 μm. The design is optimized for large bandwidth. The circuit design was carried out with a MOSFET LEVEL=3 SPICE model template. The required model parameters were extracted from both DC and AC measured characteristics. Measurements results show 10.5 dB of voltage gain and a 3 dB bandwidth of 2.62 MHz; the small-signal performance was closely predicted by simulations. The presented circuit provides the highest frequency of operation reported for a single-stage cascode amplifier in a-IGZO TFT technology to date.

关键词： Thin film transistors Bandwidth Voltage measurement Gain Gain measurement Integrated circuit modeling Frequency measurement

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Precise ranging and simultaneous high speed data transfer using mm-wave regenerative active backscatter tags

Precise ranging and simultaneous high speed data transfer us...

引用

IEEE International Conference on RFID

作者： Christian Carlowitz Martin Vossiek Axel Strobel Frank Ellinger Institute of Microwaves and Photonics University of Erlangen-Nuremberg Erlangen Germany Chair for Circuit Design and Network Theory Technische Universität Dresden Dresden Germany

For precise ranging in dense indoor RFID applications, a large absolute bandwidth is required for effective multipath suppression. Since the bandwidth of UHF systems is severely restricted, we propose mm-wave tags combined with high volume data storage and high speed data transfer (≫10 MBit/s) as an attractive alternative - in short range (1-10 m) augmented reality and multimedia applications, for example. A regenerative active backscatter tag based on a pulsed injection-locked oscillator is suggested in order to achieve a sufficiently high reader SNR for high bandwidth communication. This paper demonstrates that a 34.3-34.8 GHz frequency modulated continuous wave (FMCW) RFID ranging approach can be integrated seamlessly with simultaneous data transmission from the modulated active backscatter tag to the reader at 37.5 MBit/s. Mutual distortions between FMCW ranging and data transmission are prevented by line encoding and quadrature mixing.

关键词： Distance measurement Backscatter Bandwidth Frequency modulation Radiofrequency identification Signal to noise ratio Radar

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A 60 GHz multi-Gb/s system demonstrator utilizing analog synchronization and 1-bit data conversion

A 60 GHz multi-Gb/s system demonstrator utilizing analog syn...

引用

Topical Meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： A. Ç. Ulusoy S. Krone G. Liu A. Trasser F. Guderian B. Almeroth A. Barghouthi M. Hellfeld S. Schumann C. Carta C. Estañ K. Dombrowski V. Branković D. Radović F. Ellinger G. Fettweis H. Schumacher Institute of Electron Devices and Circuits Ulm University Ulm Germany Vodafone Chair Mobile Communications Systems TU Dresden Dresden Germany Chair for Circuit Design and Network Theory TU Dresden Dresden Germany TES Electronic Solutions GmbH Stuttgart Germany

In this paper, a 60 GHz system demonstrator for multi-Gb/s, short-range, line-of-sight communications is presented. The system utilizes a highly efficient receiver architecture with phase noise suppression capability, which performs carrier synchronization in the analog domain, eliminating the need for high speed, high precision analog-to-digital converters. In the presented demonstrator, with only 1-bit data conversion at the transmitter and receiver, an error-free maximum raw data rate of 3.45 Gb/s is achieved using BPSK modulation over a wireless transmission distance of up to 1m. A more sophisticated modulation capability is demonstrated as well for a raw data rate of 6.9 Gb/s and a bit error rate of 10 -5 usina QPSK modulation.

关键词： Wireless communication Receivers Demodulation Baseband Transmitters Binary phase shift keying

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Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm

Flexible a-IGZO TFT amplifier fabricated on a free standing ...

引用

International Electron Devices Meeting (IEDM)

作者： N. Münzenrieder L. Petti C. Zysset G. A. Salvatore T. Kinkeldei C. Perumal C. Carta F. Ellinger G. Tröster Electronics Laboratory Swiss Federal Institute of Technology Zurich Switzerland Chair for Circuit Design and Network Theory Dresden University of Technology Dresden Germany

We present flexible common source and cascode amplifiers fabricated on a free-standing plastic foil, using amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFTs with minimum channel lengths of 2.5 μm. Amplifiers are operated at a supply voltage V DD of 5 V, and exhibit maximum cutoff frequencies f C of 1.2 MHz. The circuits stay fully operational while bent to a tensile radius of 5 mm, and after 1000 cycles of repeated bending and re-flattening. To our knowledge, these are the fastest flexible oxide semiconductor based amplifiers.

关键词： Thin film transistors Logic gates Substrates Fabrication Voltage measurement Scattering parameters Strain

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