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Electrochimica Acta 2014年 145卷 335-335页

作者： Si Xiao Jiarui Cui Pengfei Yi Ying Yang Xueyi Guo Institute of Super-Microstructure and Ultrafast Process in Advanced Materials School of Physics and Electronics Hunan Key Laboratory for Super- Microstructure and Ultrafast Process Central South University Changsha 410083 China Cleaner Metallurgical Engineering Research Center Nonferrous Metal Industry of China Changsha 410083 China School of Metallurgy and Environment Central South University Changsha 410083 China

Macromol. Chem. Phys. 7/2014

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Macromolecular Chemistry and Physics 2014年第7期215卷

作者： Hui Wu Junliang Yang Shilin Cao Liulian Huang Lihui Chen College of Material Engineering Fujian Agriculture and Forestry University Fuzhou Fujian 350002 China Institute of Super‐microstructure and Ultrafast Process in Advanced Materials School of Physics and Electronics Central South University Changsha Hunan 410083 China Hunan Key Laboratory for Super‐microstructure and Ultrafast Process School of Physics and Electronics Central South University Changsha Hunan 410083 China

Unveiling the electric-current-limiting and photodetection effect in two-dimensional hydrogenated borophene

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arXiv 2019年

作者： An, Yipeng Hou, Yusheng Wang, Hui Li, Jie Wu, Ruqian Wang, Tianxing Da, Haixia Jiao, Jutao College of Physics and Materials Science International United Henan Key Laboratory of Boron Chemistry and Advanced Energy Materials Henan Normal University Henan Xinxiang453007 China Department of Physics and Astronomy University of California IrvineCA92697 United States Hunan Key Laboratory of Super Microstructure and Ultrafast Process School of Physics and Electronic Central South University Hunan Changsha410083 China College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications Jiangsu Nanjing210046 China

The electronic transport and photoelectric properties of hydrogenated borophene B4H4, which was realized in a recent experiment by Nishino, et al. [J. Am. Chem. Soc. 139, 13761 (2017)], are systematically investigated using the density functional theory and non-equilibrium Green’s function methods. We find that B4H4 exhibits a perfect current-limiting effect and has high (along the zigzag direction) and low (along the armchair one) optional levels due to its strong electrical anisotropy. Moreover, B4H4 can generate sizable photocurrents under illumination, with strong photoelectronic response to blue/green light along the zigzag/armchair direction. Our work demonstrates that B4H4 is promising for the applications of current limiter and photodetectors. Copyright © 2019, The Authors. All rights reserved.

关键词： Density functional theory

Controllable epitaxial growth of GeSe2nanostructures and nonlinear optical properties

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Nanotechnology 2021年第46期32卷 465704-465704页

作者： Gao, Weiqi Zhou, Guoliang Li, Jin Chen, Tao Li, Bo Xiao, Xingcheng Li, Yan Huang, Kaixuan Xiao, Si Hao, Guolin School of Physics and Optoelectronics Hunan Key Laboratory for Micro-Nano Energy Materials and Devices Xiangtan University Hunan411105 China Hunan Institute of Advanced Sensing and Information Technology Xiangtan University Hunan411105 China Department of Applied Physics School of Physics and Electronics Hunan University Hunan410082 China Hunan Key Laboratory of Super Microstructure and Ultrafast Process School of Physics and Electronics Central South University Hunan410083 China The Key Laboratory of Weak Light Nonlinear Photonics Ministry of Education Teda Applied Physics Institute School of Physics Nankai University Tianjin300071 China

Germanium diselenide (GeSe2) has emerged as a new member of anisotropic two-dimensional (2D) materials and gained increasing attention because of its excellent air stability, wide band gap and unique anisotropic properties, which exhibits promising applications in the fields of electronics, optoelectronics and polarized photodetection. However, the controllable epitaxial growth of large-scale and high-quality GeSe2 nanostructures to date remains a big challenge. Herein, GeSe2 nanofilms with lateral size up to centimeter scale have been successfully prepared on mica substrate by employing chemical vapor deposition technique. Experimental results demonstrated that hydrogen is the key factor for the controllable growth of GeSe2 nanostructures and GeSe2-based heterostructures. Corresponding growth mechanism was proposed based on systematical characterizations. The nonlinear optical properties of as-prepared GeSe2 were investigated by employing open-aperture z-scan technique exhibiting significant saturable and reverse saturable absorption behaviors at wavelengths of 400 nm and 800 nm, respectively. This study provides a new and robust route for fabricating GeSe2 nanostructures and 2D heterostructures, which will benefit the development of GeSe2-based nonlinear optical and optoelectronic devices. © 2021 IOP Publishing Ltd.

关键词： Epitaxial growth

Thinning Effect of Few-Layer Black Phosphorus Exposed in Dry Oxidation

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SSRN

SSRN 2024年

作者： Zheng, Xiaoming Zheng, Xiaofang Chen, Siyang Guo, Xiao Liu, Bowen Wang, Chuanxin Han, Yujie Guo, Yujing Nie, Guozheng Huang, Han Wei, Yuehua Yang, Hang Hunan Province Key Laboratory of Intelligent Sensors and Advanced Sensor Materials School of Physics and Electronic Science Hunan University of Science and Technology Xiangtan411201 China Institute of Environmental Science Shanxi University Taiyuan030006 China Hunan Key Laboratory of Super-microstructure and Ultrafast Process School of Physics and Electronics Central South University Changsha410083 China University of Defense Technology Changsha410073 China Xiangtan University School of Physics and Optoelectronics Xiangtan411105 China Beijing Blue Sky Innovation for Frontier Science Beijing100085 China

Few-layer black phosphorus (BP) exhibits great potential for next-generation electronics because of the tunable band gap and high carrier mobility. The layer modulation of BP is essential in the applications of electronic device ascribed to its thickness-dependent electronic properties. However, precisely controlling its thickness still exists challenge for the preferable performance. Here, we find that BP will be thinned controllably when exposed to dry oxygen (40% humidity, low oxygen concentration) in dark environment, which is different from that exposed to humid oxygen (100% humidity, low oxygen concentration) without light illumination. The thinning BP not only exhibits better stability, but its electrical properties can be apparently improved. The ION/IOFF ratio increased from 103 to 106, resulting in the variation of band gap from 0.3 to 2 eV, and the hole mobility improved from 235 cm2V-1s-1 to 851 cm2V-1s-1, ascribed to the layer by layer thinning and p-type doping effects induced by the formed PxOy. Our finding shows significant potential of BP in future nanoelectronic and optoelectronic applications. © 2024, The Authors. All rights reserved.

关键词： Electronic properties

Nanowrinkled Carbon Aerogels Embedded with FeNx Sites as Effective Oxygen Electrodes for Rechargeable Zinc-Air Battery

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研究（英文） 2020年第3期 179-191页

作者： Ting He Bingzhang Lu Yang Chen Yong Wang Yaqiang Zhang John L.Davenport Alan P.Chen Chih-Wen Pao Min Liu Zhifang Sun Alexander Stram Alexander Mordaunt Jairo Velasco Jr. Yuan Ping Yi Zhang Shaowei Chen State Key Laboratory for Powder Metallurgy College of Chemistry and Chemical Engineering Central South University Changsha 410083 China Department of Chemistry and Biochemistry University of California 1156 High Street Santa Cruz California 95064 USA Department of Chemical and Materials Engineering University of Alberta Edmonton Alberta Canada T6G 1H9 Department of Physics University of California 1156 High Street Santa Cruz California 95064 USA X-Ray Absorption Group National Synchrotron Radiation Research Center Hsinchu 30076 Taiwan Institute of Super-Microstructure and Ultrafast Process in Advanced Materials School of Physics and Electronics Central South University Changsha 410083 China Key Laboratory of Materials Processing and Mold (Zhengzhou University) Ministry of Education Zhengzhou 450002 China

Rational design of single-metal atom sites in carbon substrates by a flexible strategy is highly desired for the preparation of high-performance catalysts for metal-air *** this study,biomass hydrogel reactors are utilized as structural templates to prepare carbon aerogels embedded with single iron atoms by controlled *** tortuous and interlaced hydrogel chains lead to the formation of abundant nanowrinkles in the porous carbon aerogels,and single iron atoms are dispersed and stabilized within the defective carbon skeletons.X-ray absorption spectroscopy measurements indicate that the iron centers are mostly involved in the coordination structure of FeN4,with a minor fraction (ca.1/5) in the form of ***-principles calculations show that the FeNx sites in the Stone-Wales configurations induced by the nanowrinkles of the hierarchically porous carbon aerogels show a much lower free energy than the normal *** resulting iron and nitrogen-codoped carbon aerogels exhibit excellent and reversible oxygen electrocatalytic activity,and can be used as bifunctional cathode catalysts in rechargeable Zn-air batteries,with a performance even better than that based on commercial Pt/C and RuO2 *** from this study highlight the significance of structural distortions of the metal sites in carbon matrices in the design and engineering of highly active single-atom catalysts.

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Single-electron transistor made of a 3d topological insulator nanoplate

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arXiv 2019年

作者： Jing, Yumei Huang, Shaoyun Wu, Jinxiong Meng, Mengmeng Li, Xiaobo Zhou, Yu Peng, Hailin Xu, Hongqi Beijing Key Laboratory of Quantum Devices Key Laboratory for the Physics and Chemistry of Nanodevices Department of Electronics Peking University Beijing100871 China College of Chemistry and Molecular Engineering Peking University Beijing100871 China School of Physics and Electronics Institute of Super-microstructure and Ultrafast Process in Advanced Materials Central South University Changsha410083 China Powder Metallurgy Research Institute State Key Laboratory of Powder Metallurgy Central South University Changsha410083 China Beijing Academy of Quantum Information Sciences Beijing100193 China Division of Solid State Physics Lund University Box 118 LundS-221 00 Sweden

Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and quantum information processing. The absence of energy gap on the TI surface limits the experimental realization of a quantum confined system in three-dimensional topological insulators. This communication reports on the successful realization of single-electron transistor devices in Bi2Te3 nanoplates by state of the art nanofabrication techniques. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low-temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well-defined Coulomb current oscillations and Coulomb diamond shaped charge stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in three-dimensional topological insulators, which should greatly stimulate research towards confined topological states, low energy-dissipative devices and quantum information processing. Copyright © 2019, The Authors. All rights reserved.

关键词： Topology

Thermal transport of amorphous carbon and boron-nitride monolayers

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arXiv 2021年

作者： Zhang, Yu-Tian Wang, Yun-Peng Zhang, Yu-Yang Du, Shixuan Pantelides, Sokrates T. University of Chinese Academy of Sciences Institute of Physics Chinese Academy of Sciences Beijing100049 China Hunan Key Laboratory for Super Microstructure and Ultrafast Process School of Physics and Electronics Central South University Changsha410083 China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences Beijing100049 China Songshan Lake Materials Laboratory Guangdong Dongguan523808 China Department of Physics and Astronomy Department of Electrical and Computer Engineering Vanderbilt University NashvilleTN37235 United States

Two-dimensional (2D) materials like graphene and h-BN usually show high thermal conductivity, which enables rich applications in thermal dissipation and nanodevices. Disorder, on the other hand, is often present in 2D materials. Structural disorder induces localization of electrons and phonons and alters the electronic, mechanical, thermal, and magnetic properties. Here we calculate the in-plane thermal conductivity of both monolayer carbon and monolayer boron nitride in the amorphous form, by reverse nonequilibrium molecular dynamics simulations. We find that the thermal conductivity of both monolayer amorphous carbon (MAC) and monolayer amorphous boron nitride (ma-BN) are about two orders of magnitude smaller than their crystalline counterparts. Moreover, the ultralow thermal conductivity is independent of the temperature due to the extremely short phonon mean free path in these amorphous materials. The relation between the structure disorder and the reduction of the thermal conductivity is analyzed in terms of the vibrational density of states and the participation ratio. ma-BN shows strong vibrational localization across the frequency range, while MAC exhibits a unique extended G’ mode at high frequency due to its sp2 hybridization and the broken E2g symmetry. The present results pave the way for potential applications of MAC and ma-BN in thermal management. © 2021, CC BY-NC-ND.

关键词： Thermal conductivity

Structure and mechanical properties of monolayer amorphous carbon and boron nitride

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arXiv 2023年

作者： Zhang, Xi Zhang, Yu-Tian Wang, Yun-Peng Li, Shiyu Du, Shixuan Zhang, Yu-Yang Pantelides, Sokrates T. University of Chinese Academy of Sciences Institute of Physics Chinese Academy of Sciences Beijing100049 China CAS Key Laboratory of Theoretical Physics Institute of Theoretical Physics Chinese Academy of Sciences Beijing100190 China Hunan Key Laboratory for Super Microstructure and Ultrafast Process School of Physics and Electronics Central South University Changsha410083 China Songshan Lake Materials Laboratory Guangdong Dongguan523808 China Department of Physics and Astronomy Department of Electrical and Computer Engineering Vanderbilt University NashvilleTN37235 United States

Amorphous materials exhibit various characteristics that are not featured by crystals and can sometimes be tuned by their degree of disorder (DOD). Here, we report results on the mechanical properties of monolayer amorphous carbon (MAC) and monolayer amorphous boron nitride (maBN) with different DOD. The pertinent structures are obtained by kinetic-Monte-Carlo (kMC) simulations using machine-learning potentials (MLP) with density-functional-theory (DFT)-level accuracy. An intuitive order parameter, namely the areal fraction Fx occupied by crystallites within the continuous random network, is proposed to describe the DOD. We find that Fx captures the essence of the DOD: Samples with the same Fx but different sizes and distributions of crystallites have virtually identical radial distributions functions as well as bond-length and bond-angle distributions. Furthermore, by simulating the fracture process with molecular dynamics, we found that the mechanical responses of MAC and maBN before fracture are solely determined by Fx and are insensitive to the sizes and specific arrangements of the crystallites. The behavior of cracks in the two materials is analyzed and found to mainly propagate in meandering paths in the CRN region and to be influenced by crystallites in distinct ways that toughen the material. The present results reveal the relation between structure and mechanical properties in amorphous monolayers and may provide a universal toughening strategy for 2D materials. © 2023, CC BY-NC-SA.

关键词： Monolayers

The structure of amorphous two-dimensional materials: Elemental monolayer amorphous carbon versus binary monolayer amorphous boron nitride

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arXiv 2021年

作者： Zhang, Yu-Tian Wang, Yun-Peng Zhang, Xianli Zhang, Yu-Yang Du, Shixuan Pantelides, Sokrates T. University of Chinese Academy of Sciences Institute of Physics Chinese Academy of Sciences Beijing100049 China Hunan Key Laboratory for Super Microstructure and Ultrafast Process School of Physics and Electronics Central South University Changsha410083 China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences Beijing100049 China Songshan Lake Materials Laboratory Guangdong Dongguan523808 China Department of Physics and Astronomy Department of Electrical and Computer Engineering Vanderbilt University NashvilleTN37235 United States

The structure of amorphous materials has been debated since the 1930’s as a binary question: amorphous materials are either Zachariasen continuous random networks (Z-CRNs) or Z-CRNs containing crystallites. It was recently demonstrated, however, that amorphous diamond can be synthesized in either form. Here we address the question of the structure of single-atom-thick amorphous monolayers. We reanalyze the results of prior simulations for amorphous graphene and report kinetic Monte Carlo simulations based on alternative algorithms. We find that crystallite-containing Z-CRN is the favored structure of elemental amorphous graphene, as recently fabricated, whereas the most likely structure of binary monolayer amorphous BN is altogether different than either of the two long-debated options: it is a compositionally disordered "pseudo-CRN" comprising a mix of B-N and noncanonical B-B and N-N bonds and containing "pseudocrystallites", namely honeycomb regions made of noncanonical hexagons. Implications for other non-elemental 2D and bulk amorphous materials are discussed. © 2021, CC BY-NC-SA.

关键词： Crystallites