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arXiv 2023年

作者： Zhou, Hangyu dos Santos Dias, Manuel Zhang, Youguang Zhao, Weisheng Lounis, Samir Peter Grünberg Institut Institute for Advanced Simulations Forschungszentrum Jülich JARA Jülich52425 Germany School of Electronic and Information Engineering Beihang University Beijing100191 China Fert Beijing Institute School of Integrated Circuit Science and Engineering Beihang University Beijing100191 China Shenyuan Honors College Beihang University Beijing100191 China Faculty of Physics University of Duisburg-Essen CENIDE Duisburg47053 Germany Scientific Computing Department STFC Daresbury Laboratory WarringtonWA4 4AD United Kingdom

The kagome lattice is an exciting solid state physics platform for the emergence of nontrivial quantum states driven by electronic correlations: topological effects, unconventional superconductivity, charge and spin density waves, and unusual magnetic states such as quantum spin liquids. While kagome lattices have been realized in complex multi-atomic bulk compounds, here we demonstrate from first-principles a process that we dub kagomerization, in which we fabricate a two-dimensional kagome lattice in monolayers of transition metals utilizing a hexagonal boron nitride (h-BN) overlayer. Surprisingly, h-BN induces a large rearrangement of the transition metal atoms supported on a fcc(111) heavy-metal surface. This reconstruction is found to be rather generic for this type of heterostructures and has a profound impact on the underlying magnetic properties, ultimately stabilizing various topological magnetic solitons such as skyrmions and bimerons. Our findings call for a reconsideration of h-BN as merely a passive capping layer, showing its potential for not only reconstructing the atomic structure of the underlying material, e.g. through the kagomerization of magnetic films, but also enabling electronic and magnetic phases that are highly sought for the next generation of device technologies. Copyright © 2023, The Authors. All rights reserved.

关键词： Boron nitride

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Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain

arXiv

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arXiv 2024年

作者： Sun, Jianshi Li, Shouhang Shao, Cheng Tong, Zhen An, Meng Yao, Yuhang Hu, Yue Zhu, Xiongfei Liu, Yifan Wang, Renzong Liu, Xiangjun Frauenheim, Thomas Institute of Micro/Nano Electromechanical System and Integrated Circuit College of Mechanical Engineering Donghua University Shanghai201620 China Centre de Nanosciences et de Nanotechnologies CNRS Université Paris-Saclay 10 Boulevard Thomas Gobert Palaiseau91120 France Thermal Science Research Center Shandong Institute of Advanced Technology Shandong Jinan250103 China School of Advanced Energy Sun Yat-Sen University Shenzhen518107 China Department of Mechanical Engineering The University of Tokyo 7-3-1 Hongo Bunkyo Tokyo113-8656 Japan CTG Wuhan Science and Technology Innovation Park China Three Gorges Corporation Wuhan430010 China School of Science Constructor University Bremen28759 Germany Institute for Advanced Study Chengdu University Chengdu610106 China

As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing temperature, which severely limits further applications. Herein, we proposed that the hole mobility can be efficiently enhanced via slight compressive shear strain along the [100] direction, while the improvement via shear strain along the [111] direction is marginal. This impressive distinction is attributed to the deformation potential and the elastic compliance matrix. The shear strain breaks the symmetry of the crystalline structure and lifts the band degeneracy near the valence band edge, resulting in a significant suppression of interband electron-phonon scattering. Moreover, the hole mobility becomes less temperature-dependent due to the decrease of electron scatterings from high-frequency acoustic phonons. Remarkably, the in-plane hole mobility of diamond is increased by ∼ 800% at 800 K with a 2% compressive shear strain along the [100] direction. The efficient shear strain strategy can be further extended to other semiconductors with face-centered cubic geometry. Copyright © 2024, The Authors. All rights reserved.

关键词： Electron scattering

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Scaling MOSFETs with Self-aligned Super-Steep-Retrograded Halo (3SRH)

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ECS Transactions 2011年第1期34卷

作者： Binneng Wu Weiping Xiao Huilong Zhu Qingqing Liang Hao Wu Haizhou Yin Zhijiong Luo Hongyu Yu Dapeng Chen Tianchun Ye Institute of Microelectronics Chinese Academy of Sciences No.3 BeiTuCheng West Rd. Beijing Beijing 100029 China Institute of Microelectronics Chinese Academy of Sciences School of Electrical & Electronic Engineering Nanyang Technological University Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences

In order to take the advantages of the replacement gate process, improve the control of SCE, and enhance the performance of CMOSFETs, a novel method of self-aligned super-steep-retrograded halo (3SRH) implantation is designed and presented in this paper. With process and device simulations, it's demonstrated that 3SRH can be used to enhance MOSFET performance.

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A diverse set of two-qubit gates for spin qubits in semiconductor quantum dots

arXiv

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arXiv 2024年

作者： Ni, Ming Ma, Rong-Long Kong, Zhen-Zhen Chu, Ning Zhu, Sheng-Kai Wang, Chu Li, Ao-Ran Liao, Wei-Zhu Cao, Gang Wang, Gui-Lei Guo, Guang-Can Hu, Xuedong Li, Hai-Ou Guo, Guo-Ping CAS Key Laboratory of Quantum Information University of Science and Technology of China Anhui Hefei230026 China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Anhui Hefei230026 China Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Department of Physics University at Buffalo SUNY BuffaloNY14260 United States Beijing Superstring Academy of Memory Technology Beijing100176 China Hefei National Laboratory University of Science and Technology of China Hefei230088 China Origin Quantum Computing Company Limited Anhui Hefei230026 China

To realize large-scale quantum information processes, an ideal scheme for two-qubit operations should enable diverse operations with given hardware and physical interaction. However, for spin qubits in semiconductor quantum dots, the common two-qubit operations, including CPhase gates, SWAP gates, and CROT gates, are realized with distinct parameter regions and control waveforms, posing challenges for their simultaneous implementation. Here, taking advantage of the inherent Heisenberg interaction between spin qubits, we propose and verify a fast composite two-qubit gate scheme to extend the available two-qubit gate types as well as reduce the requirements for device properties. Apart from the formerly proposed CPhase (controlled-phase) gates and SWAP gates, theoretical results indicate that the iSWAP-family gate and Fermionic simulation (fSim) gate set are additionally available for spin qubits. Meanwhile, our gate scheme limits the parameter requirements of all essential two-qubit gates to a common J~∆EZ region, facilitate the simultaneous realization of them. Furthermore, we present the preliminary experimental demonstration of the composite gate scheme, observing excellent match between the measured and simulated results. With this versatile composite gate scheme, broad-spectrum two-qubit operations allow us to efficiently utilize the hardware and the underlying physics resources, helping accelerate and broaden the scope of the upcoming noise intermediate-scale quantum (NISQ) computing. Copyright © 2024, The Authors. All rights reserved.

关键词： Semiconductor quantum dots

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Polycrystalline Silicon metasurfaces enabling multi-scenario sensing applications in the mid-infrared

Polycrystalline Silicon metasurfaces enabling multi-scenario...

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International Conference on Transparent Optical Networks

作者： J.H. Mendoza-Castro A.S. Vorobev S. Iadanza G. Malvicini A. D’Orazio M. Grande G. Magno B. Lendl L. O’Faolain Department of Electrical and Information Engineering Politecnico di Bari Via E. Orabona 4 Bari Italy Institute of Chemical Technologies and Analytics TU Wien Getreidemarkt 9/164 Vienna Austria Centre for Advanced Photonics and Process Analysis Munster Technological University Bishopstown Cork Ireland Tyndall National Institute Cork Ireland Laboratory of Nano and Quantum Technologies Paul Scherrer Institut Villigen Switzerland Laboratory of Integrated Nanoscale Photonics and Optoelectronics École Polytechnique Fédérale de Lausanne Lausanne Switzerland

ISBN: (数字)9798350377323

ISBN: (纸本)9798350377330

This paper presents the design and the fundamental operating principles of all-dielectric metasurfaces devoted to multiple gas/liquid sensing applications in the mid-infrared range. These metasurfaces are composed of silicon meta-atoms fabricated on either CaF 2 or $\mathrm{Si}_{3} \mathrm{~N}_{4}$ layers. We will compare the performances of both configurations and discuss advancements in optimizing such resonant structures to achieve near-field enhancement for improved sensing capabilities.

关键词： Spectroscopy Optical device fabrication Optical fiber networks Metasurfaces Silicon Resonance Dielectrics

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Superior performance of ZnGaO solar-blind photodetectors by Implementing TFT structure and tunable ZnO cycle ratio

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Materials Today Chemistry 2024年 38卷

作者： Fan, Hui-Chen Wang, Chen Xu, Yi-Hong Fan, Teng-Min Huang, Pao-Hsun Ruan, Yu-Jiao Wu, Ting-Zhu Kuo, Hao-Chung Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen University of Technology Xiamen 361024 China School of Ocean Information Engineering Jimei University Jimei District Xiamen 361021 Fujian China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen 361024 China National Integrated Circuit Industry and Education Integration Innovation Platform Department of Electronic Science Xiamen University Xiamen 361005 China Department of Photonics & Graduate Institute of Electro-Optical Engineering College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou 54561 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua 51591 Taiwan

In this study, plasma enhanced atomic layer deposition was used to prepare ZnGaO thin films with different ZnO cycle ratios from 0 % to 50 %, which were employed to fabricate the MSM-type and TFT-type solar-blind photodetector. The properties of the films and the performance of the solar blind photodetector are greatly affected by the ZnO cycle ratio. Appropriate Zn doping content decreases the ratio of oxygen vacancies and Zn interstitials in Ga₂O₃, while excessive Zn doping degrades the quality of the film. Compared to MSM-type photodetector, an obviously improved performance of ZnGaO TFT-type photodetector has been observed due to its self-amplified photocurrent and the reduced dark current controlled by gate voltage. At a ZnO cycle ratio of 40 %, a superior performance of TFT-type solar-blind photodetector with an ultra-low dark current ∼4.5 × 10⁻¹³ A, an excellent light switching ratio ∼2.2 × 10⁷, and an outstandingly high sensitivity ∼34.31 A/W has been obtained. These results demonstrate that the incorporation of Zn dopants can effectively modulate the performance of Ga₂O₃ TFT-type photodetector providing a great perspective for cost-effective and high-performance solar-blind PDs. © 2024 Elsevier Ltd

关键词： High performance Plasma enhanced atomic layer deposition TFT-Type solar-blind photodetector ZnGaO film ZnO cycle ratio

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Nonlocal Detection of Interlayer Three-Magnon Coupling

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Physical Review Letters 2023年第4期130卷 046701-046701页

作者： Lutong Sheng Mehrdad Elyasi Jilei Chen Wenqing He Yizhan Wang Hanchen Wang Hongmei Feng Yu Zhang Israa Medlej Song Liu Wanjun Jiang Xiufeng Han Dapeng Yu Jean-Philippe Ansermet Gerrit E. W. Bauer Haiming Yu Fert Beijing Institute MIIT Key Laboratory of Spintronics School of Integrated Circuit Science and Engineering Beihang University Beijing 100191 China WPI Advanced Institute for Materials Research Tohoku University Sendai 980-8577 Japan Shenzhen Institute for Quantum Science and Engineering Southern University of Science and Technology Shenzhen 518055 China International Quantum Academy Shenzhen 518048 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100084 China Institute of Physics Ecole Polytechnique Fédérale de Lausanne (EPFL) 1015 Lausanne Switzerland Institute for Materials Research Tohoku University Sendai 980-8577 Japan Center for Spintronics Research Network Tohoku University Sendai 980-8577 Japan Zernike Institute for Advanced Materials University of Groningen 9747 AG Groningen Netherlands

A leading nonlinear effect in magnonics is the interaction that splits a high-frequency magnon into two low-frequency magnons with conserved linear momentum. Here, we report experimental observation of nonlocal three-magnon scattering between spatially separated magnetic systems, viz. a CoFeB nanowire and a yttrium iron garnet (YIG) thin film. Above a certain threshold power of an applied microwave field, a CoFeB Kittel magnon splits into a pair of counterpropagating YIG magnons that induce voltage signals in Pt electrodes on each side, in excellent agreement with model calculations based on the interlayer dipolar interaction. The excited YIG magnon pairs reside mainly in the first excited (n=1) perpendicular standing spin-wave mode. With increasing power, the n=1 magnons successively scatter into nodeless (n=0) magnons through a four-magnon process. Our results demonstrate nonlocal detection of two separately propagating magnons emerging from one common source that may enable quantum entanglement between distant magnons for quantum information applications.

关键词： Magnetic coupling Magnons Spin dynamics Spin pumping Nanowires Nonlinear waves Microwave techniques

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A SWAP Gate for Spin Qubits in Silicon

arXiv

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arXiv 2023年

作者： Ni, Ming Ma, Rong-Long Kong, Zhen-Zhen Xue, Xiao Zhu, Sheng-Kai Wang, Chu Li, Ao-Ran Chu, Ning Liao, Wei-Zhu Cao, Gang Wang, Gui-Lei Guo, Guang-Can Hu, Xuedong Jiang, Hong-Wen Li, Hai-Ou Guo, Guo-Ping CAS Key Laboratory of Quantum Information University of Science and Technology of China Anhui Hefei230026 China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Anhui Hefei230026 China Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China QuTech and Kavli Institute of Nanoscience Delft University of Technology Delft2628 CJ Netherlands Department of Physics University at Buffalo SUNY BuffaloNY14260 United States Department of Physics and Astronomy University of California Los AngelesCA90095 United States Beijing Superstring Academy of Memory Technology Beijing100176 China Hefei National Laboratory University of Science and Technology of China Hefei230088 China Origin Quantum Computing Company Limited Anhui Hefei230026 China

With one- and two-qubit gate fidelities approaching the fault-tolerance threshold for spin qubits in Si, how to scale up the architecture and make large arrays of spin qubits become the more pressing challenges. In a scaled-up structure, qubit-to-qubit connectivity has crucial impact on gate counts of quantum error correction and general quantum algorithms. In our toolbox of quantum gates for spin qubits, SWAP gate is quite versatile: it can help solve the connectivity problem by realizing both short- and long-range spin state transfer, and act as a basic two-qubit gate, which can reduce quantum circuit depth when combined with other two-qubit gates. However, for spin qubits in silicon quantum dots, high fidelity SWAP gates have not been demonstrated due to the requirements of large circuit bandwidth and a highly adjustable ratio between the strength of the exchange coupling J and the Zeeman energy difference ∆Ez. Here we demonstrate a fast SWAP gate with a duration of ~25 ns based on quantum dots in isotopically enriched silicon, with a highly adjustable ratio between J and ∆Ez, for over two orders of magnitude in our device. We are also able to calibrate the single-qubit local phases during the SWAP gate by incorporating single-qubit gates in our circuit. By independently reading out the qubits, we probe the anti-correlations between the two spins, estimate the operation fidelity and analyze the dominant error sources for our SWAP gate. These results pave the way for high fidelity SWAP gates, and processes based on them, such as quantum communication on chip and quantum simulation by engineering the Heisenberg Hamiltonian in silicon. Copyright © 2023, The Authors. All rights reserved.

关键词： Qubits

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Publisher's Note: “Highly efficient and stable near-infrared photo sensor based on multilayer MoS2/p-Si integrated with plasmonic gold nanoparticles” [Appl. Phys. Lett. 123, 061104 (2023)]

引用

Applied Physics Letters 2023年第17期123卷

作者： A. H. Abdullah Ripain N. A. A. Zulkifli C. L. Tan W. H. Abd Majid R. Zakaria College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing 210023 China Photonics Research Centre University of Malaya 50603 Kuala Lumpur Malaysia Institute of Advanced Studies (IAS) University of Malaya 50603 Kuala Lumpur Malaysia Guangdong Greater Bay Area Institute of Integrated Circuit and System 510535 Guangzhou China Low Dimensional Materials Research Centre Department of Physics Faculty of Science University of Malaya 50603 Kuala Lumpur Malaysia

This article was originally published online on 7 August 2023 with part of the abstract incorrectly placed as the first paragraph of the article. All online ver

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Nonlocal detection of interlayer three-magnon coupling

arXiv

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arXiv 2022年

作者： Sheng, Lutong Elyasi, Mehrdad Chen, Jilei He, Wenqing Wang, Yizhan Wang, Hanchen Feng, Hongmei Zhang, Yu Medlej, Israa Liu, Song Jiang, Wanjun Han, Xiufeng Yu, Dapeng Ansermet, Jean-Philippe Bauer, Gerrit E.W. Yu, Haiming Fert Beijing Institute MIIT Key Laboratory of Spintronics School of Integrated Circuit Science and Engineering Beihang University Beijing100191 China WPI Advanced Institute for Materials Research Tohoku University Sendai980-8577 Japan Shenzhen Institute for Quantum Science and Engineering Southern University of Science and Technology Shenzhen518055 China International Quantum Academy Shenzhen518048 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing100190 China State Key Laboratory of Low-Dimensional Quantum Physics Department of Physics Tsinghua University Beijing100084 China Lausanne1015 Switzerland Institute for Materials Research Tohoku University Sendai980-8577 Japan Center for Spintronics Research Network Tohoku University Sendai980-8577 Japan Zernike Institute for Advanced Materials University of Groningen Groningen9747 AG Netherlands

A leading nonlinear effect in magnonics is the interaction that splits a high-frequency magnon into two low-frequency ones with conserved linear momentum. Here, we report experimental observation of nonlocal three-magnon scattering between spatially separated magnetic systems, viz. a CoFeB nanowire and an yttrium iron garnet (YIG) thin film. Above a certain threshold power of an applied microwave field, a CoFeB Kittel magnon splits into a pair of counter-propagating YIG magnons that induce voltage signals in Pt electrodes on each side, in excellent agreement with model calculations based on the interlayer dipolar interaction. The excited YIG magnon pairs reside mainly in the first excited (n = 1) perpdendicular standing spin-wave mode. With increasing power, the n = 1 magnons successively scatter into nodeless (n = 0) magnons through a four-magnon process. Our results help to assess non-local scattering processes in magnonic circuits that may enable quantum entanglement between distant magnons for quantum information applications. © 2022, CC BY.

关键词： Yttrium iron garnet

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